Characterization of Oxides and Thin Films

1993 ◽  
Vol 309 ◽  
Author(s):  
Iain D. Baikie ◽  
Gerrit H. Bruggink
Keyword(s):  
Work Function ◽  
Local Density ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Interface Condition ◽  
Semiconductor Surface ◽  
Kelvin Probe ◽  
Preparation Methods ◽  
Surface And Interface ◽  
Wide Range

AbstractUsing a new, high resolution, microscopic Scanning Kelvin Probe (SKP), work function topographies of metal, semiconductor and metal/semionductor surfaces have been studied in both Ultra-High-Vacuum (UHV) and air environments.The work function is a very sensitive indicator of surface and Interface condition and has been previously utilized to examine preparation methods, surface roughness, adsorption processes, thin film monitoring and residual surface contamination.Extension of the basic method, via Illumination of the semiconductor surface under the tip allows one to probe the local density of states (LDOS). Variations in LDOS can be used to monitor metal contamination, interface traps, bulk contamination, oxide imperfections, etc.Work function topographies generated in this fashion have application in quality control at all stages of the manufacturing process. The Kelvin method of measuring work function is non-contact and non-destructive, utilizing neither high fields nor large currents. It can be applied to a variety of environments ranging from UHV to air and at a wide range of temperatures.

Work function study of rhenium oxidation using an ultra high vacuum scanning Kelvin probe

2000 ◽  
Vol 88 (7) ◽  
pp. 4371 ◽  
Author(s):  
I. D. Baikie ◽  
U. Petermann ◽  
A. Speakman ◽  
B. Lägel ◽  
K. M. Dirscherl ◽  
...  
Keyword(s):  
Work Function ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Kelvin Probe ◽  
Function Study ◽  
Scanning Kelvin Probe

A Novel Method for True Work Function Determination of Metal Surfaces by Combined Kelvin Probe and Photoelectric Effect Measurements

2000 ◽  
Vol 619 ◽  
Author(s):  
Bert Lägel ◽  
Iain D. Baikie ◽  
Konrad Dirscherl ◽  
Uwe Petermann
Keyword(s):  
Thin Film ◽  
Work Function ◽  
Metal Surfaces ◽  
Surface Condition ◽  
High Vacuum ◽  
Photoelectric Effect ◽  
Ultra High Vacuum ◽  
Kelvin Probe ◽  
Novel Method

ABSTRACTWe have developed a novel method for in-situ measurements of the true work function (ø) of metal surfaces by combined ultra-high vacuum compatible Kelvin Probe and photoelectric effect measurements. The work function is an extremely sensitive parameter of surface condition and can be used to study oxidation and thin film growth on metal surfaces. For example, the increase in ø due to oxidation of polycrystalline rhenium is 1.9eV.The Kelvin Probe measures local work function differences between a conducting sample and a reference tip in a non-contact, truly non-invasive way over a wide temperature range. However, it is an inherently relative technique and does not provide an absolute work function if the work function of the tip (øtip) is unknown.We present a novel approach to measure øtip with the Kelvin Probe via the photoelectric effect, using a Gd foil as the photoelectron source, hereby combining the advantages of both methods to provide the absolute work function of the sample surface. We demonstrate the application of the technique by in-situ work function measurements during oxidation of polycrystalline rhenium. The extended Kelvin Probe method therefore has potential applications as a characterisation tool for thin film epitaxy and work function engineering of surfaces.

A Novel Approach for True Work Function Determination of Electron-Emissive Materials by Combined Kelvin Probe and Photoelectric Effect Measurements

2000 ◽  
Vol 621 ◽  
Author(s):  
Bert Lägel ◽  
Iain D. Baikie ◽  
Konrad Dirscherl ◽  
Uwe Petermann
Keyword(s):  
Work Function ◽  
High Vacuum ◽  
Sample Surface ◽  
Photoelectric Effect ◽  
Ultra High Vacuum ◽  
Chemical Contamination ◽  
Kelvin Probe ◽  
Non Invasive ◽  
Novel Approach ◽  
The Stability

ABSTRACTFor the development of new electron-emissive materials knowledge of the work function Φ and changes in Φ is of particular interest. Among the various methods, the ultra-high vacuum (UHV) compatible scanning Kelvin Probe has been proven to be a superior technique to measure work function changes due to e.g. UHV cleaning processes, chemical contamination, thermal processing etc. with high accuracy (<1meV).The Kelvin Probe measures local work function differences between a conducting sample and a reference tip in a non-contact, truly non-invasive way over a wide temperature range. However, it is an inherently relative technique and does not provide an absolute work function if the work function of the tip (Φtip) is unknown.Here, we present a novel approach to measure Φtip with the Kelvin Probe via the photoelectric effect, where a Gd foil is used as the photoelectron source. This method thus provides the true work function of the sample surface with an accuracy of approx. 50meV. We demonstrate the application of the technique by in situ work function measurements on evaporated layers of the low work function material LaB6 on a Re substrate and follow the changes in Φ of LaB6 due to the surface adsorption of residual gas molecules. Thus, the extended Kelvin Probe method provides an excellent tool to characterise and monitor the stability of low work function surfaces.

Nucleation and initial growth of Pd2Si crystals on Si(111)

1993 ◽  
Vol 51 ◽  
pp. 844-845
Author(s):  
Xianghong Tong ◽  
Oliver Pohland ◽  
J. Murray Gibson
Keyword(s):  
High Vacuum ◽  
Dark Field ◽  
Ultra High Vacuum ◽  
Initial Growth ◽  
Surface And Interface ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Initial Stage ◽  
Effect Of Surface

The nucleation and initial stage of Pd2Si crystals on Si(111) surface is studied in situ using an Ultra-High Vacuum (UHV) Transmission Electron Microscope (TEM). A modified JEOL 200CX TEM is used for the study. The Si(111) sample is prepared by chemical thinning and is cleaned inside the UHV chamber with base pressure of 1x10−9 τ. A Pd film of 20 Å thick is deposited on to the Si(111) sample in situ using a built-in mini evaporator. This room temperature deposited Pd film is thermally annealed subsequently to form Pd2Si crystals. Surface sensitive dark field imaging is used for the study to reveal the effect of surface and interface steps.The initial growth of the Pd2Si has three stages: nucleation, growth of the nuclei and coalescence of the nuclei. Our experiments shows that the nucleation of the Pd2Si crystal occurs randomly and almost instantaneously on the terraces upon thermal annealing or electron irradiation.

Direct STEM ADF imaging of gold on silicon (111)

1989 ◽  
Vol 47 ◽  
pp. 472-473
Author(s):  
P. Xu ◽  
E. J. Kirkland ◽  
J. Silcox
Keyword(s):  
Film Growth ◽  
Heavy Atom ◽  
High Vacuum ◽  
Dark Field ◽  
Thin Metal Film ◽  
Base Pressure ◽  
Ultra High Vacuum ◽  
Specimen Preparation ◽  
Dark Field Imaging ◽  
Wide Range

Many studies of thin metal film growth and the formation of metal-semiconductor contacts have been performed using a wide range of experimental methods. STEM annular dark field imaging could be an important complement since it may allow direct imaging of a single heavy atom on a thin silicon substrate. This would enable studies of the local atomic arrangements and defects in the initial stage of metal silicide formation.Preliminary experiments were performed in an ultra-high vacuum VG HB501A STEM with a base pressure of 1 × 10-10 mbar. An antechamber directly attached to the microscope for specimen preparation has a base pressure of 2×l0-10 mbar. A thin single crystal membrane was fabricated by anodic etching and subsequent reactive etching. The specimen was cleaned by the Shiraki method and had a very thin oxide layer left on the surface. 5 Å of gold was deposited on the specimen at room temperature from a tungsten filament coil monitored by a quartz crystal monitor.

scholarly journals The Growth of Semiconductor Thin Films Studied by RHEED

1990 ◽  
Vol 43 (5) ◽  
pp. 583
Author(s):  
GL Price
Keyword(s):  
Thin Films ◽  
Surface Science ◽  
High Vacuum ◽  
High Energy ◽  
Ultra High Vacuum ◽  
Large Area ◽  
Growth Modes ◽  
Semiconductor Thin Films ◽  
Wide Range ◽  
Recent Developments

Recent developments in the growth of semiconductor thin films are reviewed. The emphasis is on growth by molecular beam epitaxy (MBE). Results obtained by reflection high energy electron diffraction (RHEED) are employed to describe the different kinds of growth processes and the types of materials which can be constructed. MBE is routinely capable of heterostructure growth to atomic precision with a wide range of materials including III-V, IV, II-VI semiconductors, metals, ceramics such as high Tc materials and organics. As the growth proceeds in ultra high vacuum, MBE can take advantage of surface science techniques such as Auger, RHEED and SIMS. RHEED is the essential in-situ probe since the final crystal quality is strongly dependent on the surface reconstruction during growth. RHEED can also be used to calibrate the growth rate, monitor growth kinetics, and distinguish between various growth modes. A major new area is lattice mismatched growth where attempts are being made to construct heterostructures between materials of different lattice constants such as GaAs on Si. Also described are the new techniques of migration enhanced epitaxy and tilted superlattice growth. Finally some comments are given On the means of preparing large area, thin samples for analysis by other techniques from MBE grown films using capping, etching and liftoff.

Laser cleaning of exfoliated graphene

2012 ◽  
Vol 1455 ◽  
Author(s):  
Oliver Ochedowski ◽  
Benedict Kleine Bußmann ◽  
Marika Schleberger
Keyword(s):  
Local Heating ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ambient Conditions ◽  
Kelvin Probe ◽  
Structural Modifications ◽  
Force Microscopy ◽  
Exfoliated Graphene ◽  
Atomic Force ◽  
P Type

ABSTRACTWe have employed atomic force and Kelvin-Probe force microscopy to study graphene sheets exfoliated on TiO2 under the influence of local heating achieved by laser irradiation. Exfoliation and irradiation took place under ambient conditions, the measurements were performed in ultra high vacuum. We show that after irradiation times of 6 min, an increase of the surface potential is observed which indicates a decrease of p-type carrier concentration. We attribute this effect to the removal of adsorbates like water and oxygen. After irradiation times of 12 min our topography images reveal severe structural modifications of graphene. These resemble the nanocrystallite network which form on graphene/SiO2 but after much longer irradiation times. From our results we propose that short laser heating at moderate powers might offer a way to clean graphene without inducing unwanted structural modifications.

Using a Moderate Vacuum, Hot/Cryo-Stage Equipped AFM for In-Situ Observation of α-Phase Growth In 60SN40PB Hypoeutectic Solder

1998 ◽  
Vol 4 (S2) ◽  
pp. 316-317
Author(s):  
D. N. Leonard ◽  
P.E. Russell
Keyword(s):  
Surface Science ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Scanning Tunneling ◽  
In Situ Observation ◽  
Atmospheric Conditions ◽  
Tunneling Microscopy ◽  
Wide Range ◽  
Gas Environment

Atomic force microscopy (AFM) was introduced in 1984, and proved to be more versatile than scanning tunneling microscopy (STM) due to the AFM's capabilities to scan non-conductive samples under atmospheric conditions and achieve atomic resolution. Ultra high vacuum (UHV) AFM has been used in surface science applications when control of oxidation and corrosion of a sample's surface are required. Expensive equipment and time consuming sample exchanges are two drawbacks of the UHV AFM system that limit its use. Until recently, no hot/cryo-stage, moderate vacuum, controlled gas environment AFM was commonly available.We have demonstrated that phase transformations are easily observable in metal alloys and polymers with the use of a moderate vacuum AFM that has in-situ heating/cooling capabilities and quick (within minutes) sample exchange times. This talk will describe the results of experiments involving a wide range of samples designed to make use of the full capabilities of a hot/cryo-stage, controlled gas environment AFM.

scholarly journals Time Dependent Indentation Testing At Non-Ambient Temperatures Utilizing the High Temperature Mechanical Properties Microprobe

1994 ◽  
Vol 356 ◽  
Author(s):  
B. N. Lucas ◽  
W. C. Oliver
Keyword(s):  
High Vacuum ◽  
Ultra High Vacuum ◽  
Time Dependent ◽  
Depth Sensing ◽  
Ambient Temperatures ◽  
High Temperature Mechanical Properties ◽  
Wide Range ◽  
Stress Changes ◽  
Laser Interferometric ◽  
Initial Results

AbstractTime dependent indentation data for pure indium from -100 °C to 75 °C is presented. The properties reported include hardness, indentation strain rate, stress exponent and apparent activation energy for creep. These properties were measured using a depth-sensing indentation system capable of performing experiments between -100 °C and 300 °C in ultra-high vacuum. In addition, by employing laser interferometric techniques, this system can obtain displacement data with time constants as low as 50 ns. This allows the investigation of the material response to very fast stress changes over an extremely wide range of strain rates. The adverse and beneficial dynamic effects of step-loading the indenter into the surface of the material will be discussed. Initial results obtained from this type of experiment show that it is possible to obtain energy dissipation or damping information from the material being studied.

Sign in / Sign up

Export Citation Format

Share Document