scholarly journals Time Dependent Indentation Testing At Non-Ambient Temperatures Utilizing the High Temperature Mechanical Properties Microprobe

1994 ◽  
Vol 356 ◽  
Author(s):  
B. N. Lucas ◽  
W. C. Oliver
Keyword(s):  
High Vacuum ◽  
Ultra High Vacuum ◽  
Time Dependent ◽  
Depth Sensing ◽  
Ambient Temperatures ◽  
High Temperature Mechanical Properties ◽  
Wide Range ◽  
Stress Changes ◽  
Laser Interferometric ◽  
Initial Results

AbstractTime dependent indentation data for pure indium from -100 °C to 75 °C is presented. The properties reported include hardness, indentation strain rate, stress exponent and apparent activation energy for creep. These properties were measured using a depth-sensing indentation system capable of performing experiments between -100 °C and 300 °C in ultra-high vacuum. In addition, by employing laser interferometric techniques, this system can obtain displacement data with time constants as low as 50 ns. This allows the investigation of the material response to very fast stress changes over an extremely wide range of strain rates. The adverse and beneficial dynamic effects of step-loading the indenter into the surface of the material will be discussed. Initial results obtained from this type of experiment show that it is possible to obtain energy dissipation or damping information from the material being studied.

Direct STEM ADF imaging of gold on silicon (111)

1989 ◽  
Vol 47 ◽  
pp. 472-473
Author(s):  
P. Xu ◽  
E. J. Kirkland ◽  
J. Silcox
Keyword(s):  
Film Growth ◽  
Heavy Atom ◽  
High Vacuum ◽  
Dark Field ◽  
Thin Metal Film ◽  
Base Pressure ◽  
Ultra High Vacuum ◽  
Specimen Preparation ◽  
Dark Field Imaging ◽  
Wide Range

Many studies of thin metal film growth and the formation of metal-semiconductor contacts have been performed using a wide range of experimental methods. STEM annular dark field imaging could be an important complement since it may allow direct imaging of a single heavy atom on a thin silicon substrate. This would enable studies of the local atomic arrangements and defects in the initial stage of metal silicide formation.Preliminary experiments were performed in an ultra-high vacuum VG HB501A STEM with a base pressure of 1 × 10-10 mbar. An antechamber directly attached to the microscope for specimen preparation has a base pressure of 2×l0-10 mbar. A thin single crystal membrane was fabricated by anodic etching and subsequent reactive etching. The specimen was cleaned by the Shiraki method and had a very thin oxide layer left on the surface. 5 Å of gold was deposited on the specimen at room temperature from a tungsten filament coil monitored by a quartz crystal monitor.

scholarly journals The Growth of Semiconductor Thin Films Studied by RHEED

1990 ◽  
Vol 43 (5) ◽  
pp. 583
Author(s):  
GL Price
Keyword(s):  
Thin Films ◽  
Surface Science ◽  
High Vacuum ◽  
High Energy ◽  
Ultra High Vacuum ◽  
Large Area ◽  
Growth Modes ◽  
Semiconductor Thin Films ◽  
Wide Range ◽  
Recent Developments

Recent developments in the growth of semiconductor thin films are reviewed. The emphasis is on growth by molecular beam epitaxy (MBE). Results obtained by reflection high energy electron diffraction (RHEED) are employed to describe the different kinds of growth processes and the types of materials which can be constructed. MBE is routinely capable of heterostructure growth to atomic precision with a wide range of materials including III-V, IV, II-VI semiconductors, metals, ceramics such as high Tc materials and organics. As the growth proceeds in ultra high vacuum, MBE can take advantage of surface science techniques such as Auger, RHEED and SIMS. RHEED is the essential in-situ probe since the final crystal quality is strongly dependent on the surface reconstruction during growth. RHEED can also be used to calibrate the growth rate, monitor growth kinetics, and distinguish between various growth modes. A major new area is lattice mismatched growth where attempts are being made to construct heterostructures between materials of different lattice constants such as GaAs on Si. Also described are the new techniques of migration enhanced epitaxy and tilted superlattice growth. Finally some comments are given On the means of preparing large area, thin samples for analysis by other techniques from MBE grown films using capping, etching and liftoff.

Using a Moderate Vacuum, Hot/Cryo-Stage Equipped AFM for In-Situ Observation of α-Phase Growth In 60SN40PB Hypoeutectic Solder

1998 ◽  
Vol 4 (S2) ◽  
pp. 316-317
Author(s):  
D. N. Leonard ◽  
P.E. Russell
Keyword(s):  
Surface Science ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Scanning Tunneling ◽  
In Situ Observation ◽  
Atmospheric Conditions ◽  
Tunneling Microscopy ◽  
Wide Range ◽  
Gas Environment

Atomic force microscopy (AFM) was introduced in 1984, and proved to be more versatile than scanning tunneling microscopy (STM) due to the AFM's capabilities to scan non-conductive samples under atmospheric conditions and achieve atomic resolution. Ultra high vacuum (UHV) AFM has been used in surface science applications when control of oxidation and corrosion of a sample's surface are required. Expensive equipment and time consuming sample exchanges are two drawbacks of the UHV AFM system that limit its use. Until recently, no hot/cryo-stage, moderate vacuum, controlled gas environment AFM was commonly available.We have demonstrated that phase transformations are easily observable in metal alloys and polymers with the use of a moderate vacuum AFM that has in-situ heating/cooling capabilities and quick (within minutes) sample exchange times. This talk will describe the results of experiments involving a wide range of samples designed to make use of the full capabilities of a hot/cryo-stage, controlled gas environment AFM.

scholarly journals Effect of the tip state during qPlus noncontact atomic force microscopy of Si(100) at 5 K: Probing the probe

2012 ◽  
Vol 3 ◽  
pp. 25-32 ◽  
Author(s):  
Adam Sweetman ◽  
Sam Jarvis ◽  
Rosanna Danza ◽  
Philip Moriarty
Keyword(s):  
Atomic Force Microscopy ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Dissipated Energy ◽  
Tunnel Current ◽  
Force Microscopy ◽  
Atomic Force ◽  
Wide Range ◽  
Characteristic Imaging

Background: Noncontact atomic force microscopy (NC-AFM) now regularly produces atomic-resolution images on a wide range of surfaces, and has demonstrated the capability for atomic manipulation solely using chemical forces. Nonetheless, the role of the tip apex in both imaging and manipulation remains poorly understood and is an active area of research both experimentally and theoretically. Recent work employing specially functionalised tips has provided additional impetus to elucidating the role of the tip apex in the observed contrast. Results: We present an analysis of the influence of the tip apex during imaging of the Si(100) substrate in ultra-high vacuum (UHV) at 5 K using a qPlus sensor for noncontact atomic force microscopy (NC-AFM). Data demonstrating stable imaging with a range of tip apexes, each with a characteristic imaging signature, have been acquired. By imaging at close to zero applied bias we eliminate the influence of tunnel current on the force between tip and surface, and also the tunnel-current-induced excitation of silicon dimers, which is a key issue in scanning probe studies of Si(100). Conclusion: A wide range of novel imaging mechanisms are demonstrated on the Si(100) surface, which can only be explained by variations in the precise structural configuration at the apex of the tip. Such images provide a valuable resource for theoreticians working on the development of realistic tip structures for NC-AFM simulations. Force spectroscopy measurements show that the tip termination critically affects both the short-range force and dissipated energy.

Mass Flow and Stability of Nanoscale Features on AU(111)

1992 ◽  
Vol 280 ◽  
Author(s):  
B. H. Cooper ◽  
D. R. Peale ◽  
J. G. Mclean ◽  
R. Phillips ◽  
E. Chason
Keyword(s):  
Mass Flow ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Time Dependent ◽  
Two Dimensional ◽  
Island Size ◽  
Dependent Mass ◽  
Nanoscale Features ◽  
Linear Decay

ABSTRACTWe present the use of an STM to make quantitative observations of time-dependent mass flow associated with the decay of two-dimensional clusters on the Au(111) surface. When formed and observed in air, layered islands with well-defined edges located on larger terraces are generally found to decay in such a way that their areas decrease linearly in time over periods ranging from minutes to several hours depending on the island size. This is in contrast to the behavior of similar features formed and observed under ultra high vacuum conditions, which do not appear to decay over experimental periods of several days. The linear decay is consistent with models that have been used previously to describe growth of 2-dimensional clusters on surfaces. We discuss possible decay mechanisms, and the role that adsorbates may play in influencing the decay.

Characterization of Oxides and Thin Films

1993 ◽  
Vol 309 ◽  
Author(s):  
Iain D. Baikie ◽  
Gerrit H. Bruggink
Keyword(s):  
Work Function ◽  
Local Density ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Interface Condition ◽  
Semiconductor Surface ◽  
Kelvin Probe ◽  
Preparation Methods ◽  
Surface And Interface ◽  
Wide Range

AbstractUsing a new, high resolution, microscopic Scanning Kelvin Probe (SKP), work function topographies of metal, semiconductor and metal/semionductor surfaces have been studied in both Ultra-High-Vacuum (UHV) and air environments.The work function is a very sensitive indicator of surface and Interface condition and has been previously utilized to examine preparation methods, surface roughness, adsorption processes, thin film monitoring and residual surface contamination.Extension of the basic method, via Illumination of the semiconductor surface under the tip allows one to probe the local density of states (LDOS). Variations in LDOS can be used to monitor metal contamination, interface traps, bulk contamination, oxide imperfections, etc.Work function topographies generated in this fashion have application in quality control at all stages of the manufacturing process. The Kelvin method of measuring work function is non-contact and non-destructive, utilizing neither high fields nor large currents. It can be applied to a variety of environments ranging from UHV to air and at a wide range of temperatures.

Design concept for a modular in-vacuum Hall probe mapper for in-vacuum undulators and cryogenic permanent magnet undulators of varying magnetic length

2011 ◽  
Vol 1 (MEDSI-6) ◽  
Author(s):  
J. Rank ◽  
D. Harder ◽  
G. Rakowsky ◽  
T. Tanabe
Keyword(s):  
Permanent Magnet ◽  
Modular Design ◽  
Magnetic Measurement ◽  
High Vacuum ◽  
Design Concept ◽  
Ultra High Vacuum ◽  
Light Sources ◽  
Hall Probe ◽  
Wide Range ◽  
Magnetic Length

Both in-vacuum undulators (IVUs) and cryogenic permanent magnet undulators (CPMUs), each important to third-generation light sources, are best characterized in their operating environment. To create a precision Hall probe map of an IVU/CPMU (IVU hereafter), an in-vacuum magnetic measurement (IVMM) system is proposed. Point-by-point measurement of field and trajectory error informs corrective tuning.A novel design concept for a universal IVMM System has been developed and explored. The IVMM seals to the rectangular Ultra High Vacuum (UHV) flange of the IVU and shares its common vacuum space. Moreover, a modular design permits a wide range of IVUs of varying magnetic length to be mapped with a single IVMM, and is thus cost effective when multiple IVUs of varying configurations are planned. Here we review aspects of the modular IVMM design concept.

High Yield Growth of Various CdS Nano-Structures and Their Electron Field Emission Behavior

2006 ◽  
Vol 963 ◽  
Author(s):  
Juno Lawrance ◽  
Timothy Gutu ◽  
Devon McClain ◽  
Jianfeng Wu ◽  
Jun Jiao
Keyword(s):  
Field Emission ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
High Yield ◽  
Vapor Flow ◽  
Electron Field Emission ◽  
Nanoscale Device ◽  
Field Emission Properties ◽  
Wide Range ◽  
Electron Field

ABSTRACTNanostructures are considered the critical component in a wide range of potential nanoscale device applications. Yet a procedure to fabricate them with both controllable results and in bulk quantities must be developed in order to achieve their commercialization at reduced cost. In this report, we introduce an improved vapor-liquid-solid method that is capable of preparing high yield, high quality CdS nanowires and nanobelts in a turf-like configuration. To increase yield, we placed gold-coated substrates in a ceramic boat partially covered with a glass slide to form a gas trap. Only a small opening was provided to allow the CdS vapor to escape from the trap. This arrangement increases catalyst exposure to CdS vapor flow in comparison to conventional CVD methods. This allowed the CdS vapor to deposit densely over the substrate at a predetermined temperature range of 501°C-630°C inside the quartz tube. These conditions results in synthesis of various morphologies on both quartz and tungsten substrates including an intertwined-like structure not previously reported. Electron microscopy and microanalysis techniques were utilized in characterizing these morphologies, internal structures and elemental compositions. Electron field emission properties were investigated in an ultra high vacuum chamber set up with a base pressure of ∼1E-9 torr.

Design of Ultra High Vacuum Scanning Electron Microscope Combined with Scanning Tunneling Microscope

1992 ◽  
Vol 295 ◽  
Author(s):  
Mikio Takai ◽  
Naoki Yokoi ◽  
Ryou Mimura ◽  
Hiroshi Sawaragi ◽  
Ryuso Aihara
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Scanning Tunneling Microscope ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Electron Gun ◽  
Scanning Tunneling ◽  
Tunneling Microscope ◽  
Wide Range ◽  
Scanning Electron

AbstractAn ultra high vacuum (UHV) scanning electron microscope (SEM) combined with a scanning tunneling microscope (STM) has been designed and constructed to solve problems, arising from STM surface imaging and nanofabrication using STM tips, such as difficulty in probe tip location and change in tip shape. The system facilitates to image and/or to modify a wide range of area from submicron down to subnanometer. A ZrO/W thermal emitter in a Schottky mode has been used for an electron gun to obtain a low energy spread with a high angular current density. Minimum beam spot diameters of 6 and 12 nm with currents of 100 pA and 4 nA are estimated by optical property calculation for high resolution (SEM) and high current (fabrication) modes, respectively.

Sign in / Sign up

Export Citation Format

Share Document