scholarly journals Ion Implantation and Annealing of Oxides

1986 ◽  
Vol 74 ◽  
Author(s):  
C. W. White ◽  
L. A. Boatner ◽  
P. S. Sklad ◽  
C. J. Mchargue ◽  
S. J. Pennycook ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Liquid Nitrogen ◽  
Amorphous Phase ◽  
Room Temperature ◽  
Solid Phase ◽  
Liquid Nitrogen Temperature ◽  
Pure Material ◽  
Near Surface ◽  
Implantation Damage ◽  
Crystalline Oxides

AbstractIon implantation damage and annealing results are presented for a number of crystalline oxides. In A12 O3, the amorphous phase produced by ion bombardment of the pure material first crystallizes in the (crystalline) γ phase. This is followed by the transformation of γ-Al2 O3 to α-A12O3 at a well defined interface. The activation energy for the growth of α alumina from γ is 3.6 eV/atom. In CaTiO3, the implantation-induced amorphous phase transforms to the crystalline phase by solid-phase epitaxy (SPE). ZnO is observed to remain crystalline even after high implantation doses at liquid nitrogen temperatures. The near surface of KTaO3 is transformed to a polycrystalline state after implantation at room temperature or liquid nitrogen temperature.

Ion Implantation Damage and Annealing in GaSb

1993 ◽  
Vol 316 ◽  
Author(s):  
S. Iyer ◽  
R. Parakkat ◽  
B. Patnaik ◽  
N. Parikh ◽  
S. Hegde
Keyword(s):  
Ion Implantation ◽  
Surface Damage ◽  
Liquid Nitrogen Temperature ◽  
Amorphous Layer ◽  
Implantation Technique ◽  
Near Surface ◽  
Projected Range ◽  
Implantation Damage ◽  
Pb Ions ◽  
Better Than

ABSTRACTIon implantation technique is being investigated as an alternate technique for doping GaSb. Hence an understanding of the production and removal of the damage is essential. In this paper, we report on the damages produced by implantation of Te, Er, Hg and Pb ions into undoped (100) GaSb single crystals and their recovery by Rutherford backscattering (RBS)/channeling. The implantations of 1013 to 1013 ions/cm2 in GaSb were done at liquid nitrogen temperature at energies corresponding to the same projected range of 447Å. A comparison of the damage produced by the different ions and their recovery was made by RBS/channeling along <100> axis of GaSb. Near surface damage equivalent to that of an amorphous layer was observed even at lower doses. Upon annealing at 600°C for 30 sec., the Te implanted samples showed best recovery compared to others (Xmin = 11%), the value of Xmin being better than those normally observed in unimplanted Te-doped substrates.

Infrared Spectra of the Alkali Metal Cyanides in the Solid State

1973 ◽  
Vol 27 (2) ◽  
pp. 93-94 ◽  
Author(s):  
Zakya K. Ismail ◽  
Robert H. Hauge ◽  
John L. Margrave
Keyword(s):  
Solid State ◽  
Alkali Metal ◽  
Liquid Nitrogen ◽  
Infrared Spectra ◽  
Room Temperature ◽  
Solid Phase ◽  
Liquid Nitrogen Temperature ◽  
Metal Cyanides ◽  
Sodium And Potassium

The infrared spectra of lithium isocyanide and of sodium and potassium cyanides in the solid phase were examined over the range 4000 to 140 cm−1 at room temperature. A study of the effect of cooling the solids to liquid nitrogen temperature has been carried out.

On The Formation of Si Oxide by Ion Implantation

1985 ◽  
Vol 45 ◽  
Author(s):  
F. Namavar ◽  
J.I. Budnick ◽  
F.H. Sanchez ◽  
H.C. Hayden
Keyword(s):  
Ion Implantation ◽  
Liquid Nitrogen ◽  
Room Temperature ◽  
Experimental Situation ◽  
Liquid Nitrogen Temperature ◽  
Excess Oxygen ◽  
Implantation Temperature ◽  
Current Densities

ABSTRACTOxygen 0+ ions have been implanted into Si both at room temperature and liquid nitrogen temperature in order to determine the effect of implantation temperature on SiO2 formation. Samples were analysed by RBS with 1.5 MeV He+ ions. The implants of 0+ in Si were done at 150 keV with current densities of ≤10 μA/cm2. For doses of more than 1.5×1018 0+/cm2, in-situ RBS experiments positively indicate a 2:1 oxygen silicon ratio. Increased 0+ doses (for both room temperature and liquid nitrogen temperature) cause the Si02 layers to spread uniformly and symmetrically toward both the surface and the interior. From these results, it is apparent that excess oxygen diffuses toward Si/Si02 interfaces in our experimental situation even at liquid nitrogen temperature.

Structural characterization of damage in Si(100) produced by MeV Si+ ion implantation and annealing

1990 ◽  
Vol 5 (2) ◽  
pp. 352-359 ◽  
Author(s):  
M. K. El-Ghor ◽  
O. W. Holland ◽  
C. W. White ◽  
S. J. Pennycook
Keyword(s):  
Epitaxial Growth ◽  
Liquid Nitrogen ◽  
Room Temperature ◽  
Solid Phase ◽  
Liquid Nitrogen Temperature ◽  
Interfacial Region ◽  
Layer By Layer ◽  
Extended Defects ◽  
Lower Growth ◽  
Wide Region

Buried amorphous layers were produced by implantation of MeV Si+ ions in silicon single crystal at room temperature and liquid nitrogen temperature. The damage is characterized structurally both in the as-implanted condition and after post-implantation furnace annealing. Growth of the amorphous layer during room temperature implantation is found to occur by a layer-by-layer mechanism with relatively sharp interfacial transition regions. A wide region ahead of the buried amorphous region extending to the surface is observed to be free of any extended defects. Recrystallization of the damaged region during thermal annealing occurs by solid-phase epitaxial growth at both interfaces. A lower growth velocity is found at the upper interface, which is attributed to a higher hairpin dislocation density grown-in at this interface. Results of irradiation at liquid nitrogen temperature, on the other hand, show that nucleation and growth of the amorphous damage occurs over a wide region and is not confined to the interfacial region. This results in a very diffuse upper interface composed of a mixture of amorphous and crystalline phases. Substantial reordering is observed in this mixed-phase region after 400°C annealing, even though this temperature is too low for normal interfacial solid-phase epitaxial growth. Cross-sectional transmission electron microscopy, as well as Rutherford backscattering spectroscopy, were used in this study.

scholarly journals Ion Implantation and Annealing of SrTiO3 and CaTiO3

1987 ◽  
Vol 93 ◽  
Author(s):  
C. W. White ◽  
L. A. Boatner ◽  
J. Rankin ◽  
M. J. Aziz
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Surface Region ◽  
Single Crystal Substrate ◽  
Recrystallization Process ◽  
Near Surface ◽  
Ion Channeling ◽  
Implantation Damage ◽  
Crystal Substrate ◽  
Kinetics Of

ABSTRACTIon implantation damage and thermal annealing results are presented for single crystals of SrTiO3 and CaTiO3. The near-surface region of both of these materials can be made amorphous by low doses (∼1015/cm2 ) of heavy ions (Pb at 540 keV). During annealing, the amorphous implanted region crystallizes epitaxially on the underlying single-crystal substrate. The kinetics of this solid-phase epitaxial recrystallization process have been measured by employing ion channeling techniques.

Cryogenic Interlaminar Properties of PBO Fiber/Epoxy Composites

2011 ◽  
Vol 391-392 ◽  
pp. 1445-1449
Author(s):  
Chun Hua Zhang ◽  
Shi Lin Luan ◽  
Xiu Song Qian ◽  
Bao Hua Sun ◽  
Wen Sheng Zhang
Keyword(s):  
Liquid Nitrogen ◽  
Room Temperature ◽  
Liquid Nitrogen Temperature ◽  
Epoxy Composites ◽  
Bending Test ◽  
Test Results ◽  
Sem Images ◽  
Three Point Bending ◽  
Pbo Fiber ◽  
Interlaminar Shear

The influences of low temperature on the interlaminar properties for PBO fiber/epoxy composites have been studied at liquid nitrogen temperature (77 K) in terms of three point bending test. Results showed that the interlaminar shear strength at 77 K were significantly higher than those at room temperature (RT). For the analysis of the test results, the tensile behaviors of epoxy resin at both room temperature and liquid nitrogen temperature were investigated. The interface between fiber and matrix was observed using SEM images.

Research on DC Breakdown and Flashover Characteristics of PI with Different Temperature

2016 ◽  
Vol 709 ◽  
pp. 11-14
Author(s):  
Tian Ye Niu ◽  
Jia Xin Wu ◽  
Ying Wen Li ◽  
Dong Sheng Xu ◽  
Lu Li ◽  
...  
Keyword(s):  
Liquid Nitrogen ◽  
Room Temperature ◽  
Rapid Development ◽  
Liquid Nitrogen Temperature ◽  
Power Equipment ◽  
Electrical Characteristics ◽  
Cryogenic Temperatures ◽  
Insulating Materials ◽  
Dielectric Performance ◽  
Working Performance

The electrical characteristics of insulating materials play a key role on the working performance and operation reliability of power equipment. With the rapid development of superconducting technology in recent years,the working temperature of high temperature superconducting power equipment can be controlled around the liquid nitrogen temperature. Due to its excellent dielectric performance and mechanical properties, polyimide have been widely used in power equipment at room temperature. However, polyimide, as a kind of cryogenic insulating materials, is rarely reported at present. Therefore, the study of the insulating characteristics of polyimide at the cryogenic temperatures is of great significance. The DC breakdown property and flashover performance of polyimide are tested around room temperature (300K) and liquid nitrogen temperature (78K). The results show that temperature has some effects on the DC breakdown property and flashover performance of polyimide.

Application of interference fits on cylindrical monochromator crystals to overcome clamping and cooling deformations

2019 ◽  
Vol 26 (2) ◽  
pp. 382-385
Author(s):  
Joshua Stimson ◽  
Michael Ward ◽  
John Sutter ◽  
Sofia Diaz-Moreno ◽  
Simon Alcock ◽  
...  
Keyword(s):  
Heat Exchanger ◽  
Liquid Nitrogen ◽  
Room Temperature ◽  
Silicon Crystal ◽  
Liquid Nitrogen Temperature ◽  
Cryogenic Cooling ◽  
Element Analysis ◽  
Thermal Interface ◽  
Macro Scale ◽  
Order Of Magnitude

In order to provide adequate cryogenic cooling of both existing and next-generation crystal monochromators, a new approach to produce an optimum thermal interface between the first crystal and its copper heat exchanger is proposed. This will ensure that the increased heat load deposited by higher X-ray powers can be properly dissipated. Utilizing a cylindrical silicon crystal, a tubular copper heat exchanger and by exploiting the differing thermal and mechanical properties of the two, a very good thermal interface was achieved at liquid-nitrogen temperatures. The surface flatness of the diffracting plane at one end of the cylindrical crystal was measured at room temperature while unconstrained. The crystal was then placed into the copper heat exchanger, a slide fit at room temperature, and then cooled to liquid-nitrogen temperature. At −200°C the slide fit became an interference fit. This room-temperature `loose' fit was modelled using finite-element analysis to obtain the desired fit at cryogenic temperatures by prescribing the fit at room temperature. Under these conditions, the diffraction surface was measured for distortion due to thermal and mechanical clamping forces. The total deformation was measured to be 30 nm, an order of magnitude improvement over deformation caused by cooling alone with the original side-clamped design this concept method is set to replace. This new methodology also has the advantage that it is repeatable and does not require macro-scale tools to acquire a nanometre-accuracy mounting.

Study of Electrical Properties of Ge-Nanocrystalline Films Deposited by Cluster-Beam Evaporation Technique

1998 ◽  
Vol 536 ◽  
Author(s):  
Souri Banedjee ◽  
H. Ono ◽  
S. Nozaki ◽  
H. Morisaki
Keyword(s):  
Electrical Properties ◽  
Liquid Nitrogen ◽  
Coulomb Blockade ◽  
Room Temperature ◽  
Liquid Nitrogen Temperature ◽  
Cluster Beam ◽  
Nanocrystalline Films ◽  
Current Voltage ◽  
Evaporation Technique

AbstractRoom temperature current-voltage (I-V) characteristics were studied across the thickness of the Ge nanocrystalline films, prepared by the cluster beam evaporation technique. The films thus prepared are deposited either at room temperature (Ge-RT) or at liquid nitrogen temperature (Ge-LNT). Ge-LNT nanofilm is subjected to oxidation while Ge-RT did not get oxidized. Steps were observed in the I-V characteristics of the thin Ge- LNT samples suggesting the Coulomb Blockade effect.

Modification of The Near-Surface Region Of Al2O3 By Ion Implantation

1983 ◽  
Vol 24 ◽  
Author(s):  
C. W. White ◽  
G. C. Farlow ◽  
H. Naramoto ◽  
C. J. Mchargue ◽  
B. R. Appleton
Keyword(s):  
Mechanical Properties ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Structural Property ◽  
Surface Region ◽  
Impurity Incorporation ◽  
Near Surface ◽  
Implantation Damage ◽  
Property Changes

ABSTRACTPhysical and structural property changes resulting from ion implantation and thermal annealing of α-A12O3 are reviewed. Emphasis is placed on damage production during implantation, damage recovery during thermal annealing, and impurity incorporation during thermal annealing. Physical and structural property changes caused by ion implantation and annealing are correlated with changes in the mechanical properties.

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