Ion Implantation and Annealing of SrTiO3 and CaTiO3

ABSTRACTIon implantation damage and thermal annealing results are presented for single crystals of SrTiO3 and CaTiO3. The near-surface region of both of these materials can be made amorphous by low doses (∼1015/cm2 ) of heavy ions (Pb at 540 keV). During annealing, the amorphous implanted region crystallizes epitaxially on the underlying single-crystal substrate. The kinetics of this solid-phase epitaxial recrystallization process have been measured by employing ion channeling techniques.

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Dynamic studies of silicide-mediated crystallization of amorphous silicon

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100131395 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1352-1353

Author(s):

C. Hayzelden ◽

J. L. Batstone

Keyword(s):

Ion Implantation ◽

Solid Phase ◽

Metallic Phase ◽

Single Crystal Substrate ◽

Free Electrons ◽

Melt Temperature ◽

Transmission Electron ◽

Crystal Substrate ◽

High Resolution Tem

Epitaxial reordering of amorphous Si(a-Si) on an underlying single-crystal substrate occurs well below the melt temperature by the process of solid phase epitaxial growth (SPEG). Growth of crystalline Si(c-Si) is known to be enhanced by the presence of small amounts of a metallic phase, presumably due to an interaction of the free electrons of the metal with the covalent Si bonds near the growing interface. Ion implantation of Ni was shown to lower the crystallization temperature of an a-Si thin film by approximately 200°C. Using in situ transmission electron microscopy (TEM), precipitates of NiSi2 formed within the a-Si film during annealing, were observed to migrate, leaving a trail of epitaxial c-Si. High resolution TEM revealed an epitaxial NiSi2/Si(l11) interface which was Type A. We discuss here the enhanced nucleation of c-Si and subsequent silicide-mediated SPEG of Ni-implanted a-Si.Thin films of a-Si, 950 Å thick, were deposited onto Si(100) wafers capped with 1000Å of a-SiO2. Ion implantation produced sharply peaked Ni concentrations of 4×l020 and 2×l021 ions cm−3, in the center of the films.

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Modification of The Near-Surface Region Of Al2O3 By Ion Implantation

MRS Proceedings ◽

10.1557/proc-24-163 ◽

1983 ◽

Vol 24 ◽

Cited By ~ 1

Author(s):

C. W. White ◽

G. C. Farlow ◽

H. Naramoto ◽

C. J. Mchargue ◽

B. R. Appleton

Keyword(s):

Mechanical Properties ◽

Ion Implantation ◽

Thermal Annealing ◽

Structural Property ◽

Surface Region ◽

Impurity Incorporation ◽

Near Surface ◽

Implantation Damage ◽

Property Changes

ABSTRACTPhysical and structural property changes resulting from ion implantation and thermal annealing of α-A12O3 are reviewed. Emphasis is placed on damage production during implantation, damage recovery during thermal annealing, and impurity incorporation during thermal annealing. Physical and structural property changes caused by ion implantation and annealing are correlated with changes in the mechanical properties.

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Homoepitaxial Alignment of SrTiO3 Thin Films Prepared by Metallo-Organic Decomposition.

MRS Proceedings ◽

10.1557/proc-249-201 ◽

1991 ◽

Vol 249 ◽

Cited By ~ 3

Author(s):

Gabriel Braunstein ◽

Gustavo R. Paz-Pujalt

Keyword(s):

Thin Films ◽

Single Crystal ◽

Solid Phase ◽

Single Crystal Substrate ◽

Layer By Layer ◽

Extrinsic Factors ◽

Ion Channeling ◽

Random Nucleation ◽

Crystal Substrate ◽

Organic Decomposition

ABSTRACTWe demonstrate the homoepitaxial growth of SrTiO3 prepared by the method of metallo-organic decomposition (MOD). Thin films of SrTiO3 are prepared by spin-coating and thermal decomposition of a solution of metallo-organic compounds, on single crystal, <100> oriented, SrTiO3 substrates and subsequently heat treated at temperatures ranging from 650°C to 1100°C for 30 minutes. Heat treatment at 1100°C results in the formation of single-crystal SrTiO3, perfectly aligned with respect to the underlying substrate.Ion-channeling analysis shows that the transformation to singlecrystal material proceeds epitaxially from the coating-substrate interface towards the surface of the sample. Transmission electron microscopy (TEM) studies of partially regrown samples reveal two distinct phases: an epitaxially aligned single-crystal phase, adjacent to the substrate, and a polycrystalline phase on top. On the basis of these observations, it is proposed that the crystallization of the MOD films involves the competition between two processes: layer-by-layer solid phase epitaxy and random nucleation and growth of crystallites. Layerby- layer epitaxy is the predominant crystallization mechanism unless it is inhibited by extrinsic factors like the contamination of the interface between the MOD film and the single-crystal substrate.

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Ion Implantation of Ti INTO LiNbO3: Fabrication of Waveguides and Simple Modulators

MRS Proceedings ◽

10.1557/proc-152-294 ◽

1989 ◽

Vol 152 ◽

Author(s):

C. W. White ◽

D. K. Thomas ◽

P. R. Ashley ◽

W. S. C. Chang ◽

C. Buchal

Keyword(s):

Ion Implantation ◽

Solid Phase ◽

Surface Region ◽

Amorphous Region ◽

Index Of Refraction ◽

Near Surface ◽

Channel Waveguides ◽

High Doses ◽

Water Saturated ◽

Saturated Oxygen

ABSTRACTIon implantation has been used to introduce Ti at very high doses (>3 × 1017 /cm2) into the near-surface region of LiNbO3 to change the index of refraction.’ In the as-implanted state, the near surface is amorphous. Thermal annealing in water-saturated oxygen 1000°C crystallizes the amorphous region and incorporates the Ti into substitutional sites in the lattice at concentrations that exceed 10 at.%. Recrystallization takes place by solid-phase epitaxy. Both planar and channel waveguides have been fabricated with optical attenuations of <1 dB/cm. Both Mach-Zehnder and Bragg modulators have been fabricated using Ti implantation of LiNbO3. The characteristics of these devices have been determined and will be reported. The higher Ti concentrations which can be achieved by implantation allows tighter mode confinement and smaller mode profiles than with Ti-diffused guides.

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Ion Implantation and Annealing of Oxides

MRS Proceedings ◽

10.1557/proc-74-357 ◽

1986 ◽

Vol 74 ◽

Cited By ~ 18

Author(s):

C. W. White ◽

L. A. Boatner ◽

P. S. Sklad ◽

C. J. Mchargue ◽

S. J. Pennycook ◽

...

Keyword(s):

Ion Implantation ◽

Liquid Nitrogen ◽

Amorphous Phase ◽

Room Temperature ◽

Solid Phase ◽

Liquid Nitrogen Temperature ◽

Pure Material ◽

Near Surface ◽

Implantation Damage ◽

Crystalline Oxides

AbstractIon implantation damage and annealing results are presented for a number of crystalline oxides. In A12 O3, the amorphous phase produced by ion bombardment of the pure material first crystallizes in the (crystalline) γ phase. This is followed by the transformation of γ-Al2 O3 to α-A12O3 at a well defined interface. The activation energy for the growth of α alumina from γ is 3.6 eV/atom. In CaTiO3, the implantation-induced amorphous phase transforms to the crystalline phase by solid-phase epitaxy (SPE). ZnO is observed to remain crystalline even after high implantation doses at liquid nitrogen temperatures. The near surface of KTaO3 is transformed to a polycrystalline state after implantation at room temperature or liquid nitrogen temperature.

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The Effects of Ion Implantation on the Surface Features of Inconel 600

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100118333 ◽

1985 ◽

Vol 43 ◽

pp. 288-289

Author(s):

John D. Rubio

Keyword(s):

Grain Boundary ◽

Ion Implantation ◽

Nuclear Power ◽

Power Plants ◽

Surface Region ◽

Selective Dissolution ◽

Boundary Region ◽

Near Surface ◽

Inconel 600 ◽

Steam Generator Tubing

The degradation of steam generator tubing at nuclear power plants has become an important problem for the electric utilities generating nuclear power. The material used for the tubing, Inconel 600, has been found to be succeptible to intergranular attack (IGA). IGA is the selective dissolution of material along its grain boundaries. The author believes that the sensitivity of Inconel 600 to IGA can be minimized by homogenizing the near-surface region using ion implantation. The collisions between the implanted ions and the atoms in the grain boundary region would displace the atoms and thus effectively smear the grain boundary.To determine the validity of this hypothesis, an Inconel 600 sample was implanted with 100kV N2+ ions to a dose of 1x1016 ions/cm2 and electrolytically etched in a 5% Nital solution at 5V for 20 seconds. The etched sample was then examined using a JEOL JSM25S scanning electron microscope.

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Kinetics of solid phase epitaxy in thick amorphous Si layers formed by MeV ion implantation

Applied Physics Letters ◽

10.1063/1.103477 ◽

1990 ◽

Vol 57 (13) ◽

pp. 1340-1342 ◽

Cited By ~ 82

Author(s):

J. A. Roth ◽

G. L. Olson ◽

D. C. Jacobson ◽

J. M. Poate

Keyword(s):

Ion Implantation ◽

Solid Phase ◽

Solid Phase Epitaxy ◽

Amorphous Si ◽

Kinetics Of

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Effect of Microstructure on the Dissolution Kinetics of Copper Thin Films in Dilute Aqueous Solutions of Cupric Chloride

MRS Proceedings ◽

10.1557/proc-323-79 ◽

1993 ◽

Vol 323 ◽

Author(s):

L. Harper Walsh ◽

N. B. Feilchenfeld ◽

J. A. Schwarz

Keyword(s):

Grain Size ◽

Grain Orientation ◽

Dissolution Kinetics ◽

Surface Region ◽

Practical Method ◽

Reaction Rates ◽

Near Surface ◽

Dilute Aqueous Solutions ◽

Microelectronics Industry ◽

Kinetics Of

ABSTRACTMicrostructural differences in copper deposited by four techniques commonly used in the microelectronics industry were previously reported. [1] The reaction rates were predicted using either grain size or grain orientation as the dominant microstructure characteristic. A practical method to monitor copper speciation was developed.[2] This technique was used to measure the reaction rates for the different copper films under two different etching conditions. The results are explained using grain size, grain orientation and near surface region composition.

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Heteroepitaxial Growth Of ZnO Films BY PLD

MRS Proceedings ◽

10.1557/proc-474-383 ◽

1997 ◽

Vol 474 ◽

Cited By ~ 1

Author(s):

R. D. Vispute ◽

V. Talyansky ◽

Z. Trajanovic ◽

S. Choopun ◽

M. Downes ◽

...

Keyword(s):

Oxygen Pressure ◽

Surface Region ◽

Optical Quality ◽

Degree Of Crystallinity ◽

Zno Films ◽

Heteroepitaxial Growth ◽

Near Surface ◽

Ion Channeling ◽

Deposition Parameters ◽

High Degree

ABSTRACTHere we present our recent work on the fabrication of high crystalline and optical quality ZnO films on sapphire (001) by pulsed laser deposition. The influence of deposition parameters such as the substrate temperature, oxygen pressure, laser fluence, and pulse repetition rate on the crystalline quality of ZnO layers has been studied. The Ω-rocking curve FWHM of the (002) peak for the films grown at 750°, oxygen pressure 10−5 Torr was 0.17°. The XRD-Ф scans studies revealed that the films were epitaxial with a 30° rotation of the unit cell with respect to the sapphire to achieve a low energy configuration for epitaxial growth. The high degree of crystallinity was confirmed by ion channeling technique providing a minimum Rutherford backscattering yield of 2–3% in the near surface region (-2000Å). The atomic force microscopy revealed smooth hexagonal faceting of the films. The optical absorption edge measured by UV-Visible spectroscopy was sharp at 383 nm. Excellent crystalline properties of these epi-ZnO/sapphire heterostractures are thus promising for III-V nitride heteroepitaxy.

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Microstructure and Mechanical Properties of Ti + N Ion Implanted Cronidur30 Steel

Materials ◽

10.3390/ma12030427 ◽

2019 ◽

Vol 12 (3) ◽

pp. 427 ◽

Cited By ~ 4

Author(s):

Jie Jin ◽

Wei Wang ◽

Xinchun Chen

Keyword(s):

Mechanical Properties ◽

Ion Implantation ◽

Photoelectron Spectroscopy ◽

Structural Modification ◽

Surface Region ◽

Grazing Incidence ◽

Bearing Steel ◽

Near Surface ◽

X Ray ◽

Ion Implanted

In this study, Ti + N ion implantation was used as a surface modification method for surface hardening and friction-reducing properties of Cronidur30 bearing steel. The structural modification and newly-formed ceramic phases induced by the ion implantation processes were investigated by transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and grazing incidence X-ray diffraction (GIXRD). The mechanical properties of the samples were tested by nanoindentation and friction experiments. The surface nanohardness was also improved significantly, changing from ~10.5 GPa (pristine substrate) to ~14.2 GPa (Ti + N implanted sample). The friction coefficient of Ti + N ion implanted samples was greatly reduced before failure, which is less than one third of pristine samples. Furthermore, the TEM analyses confirmed a trilamellar structure at the near-surface region, in which amorphous/ceramic nanocrystalline phases were embedded into the implanted layers. The combined structural modification and hardening ceramic phases played a crucial role in improving surface properties, and the variations in these two factors determined the differences in the mechanical properties of the samples.

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