scholarly journals Investigation of Chemomechanical Effects on Sapphire Surfaces Modified by Ion-Implantation-Induced Carbon Impurities

2021 ◽  
Vol 7 (2) ◽  
Author(s):  
Arti Yadav ◽  
Noushin Moharrami ◽  
Steve Bull
Keyword(s):  
Ion Implantation ◽  
Ion Beam ◽  
Water Layer ◽  
Adsorbed Water ◽  
Sample Surface ◽  
Amorphous Layer ◽  
Near Surface ◽  
Sapphire Surface ◽  
Carbon Impurities ◽  
High Doses

AbstractModification of the chemomechanical behaviour of the surface of sapphire by ion implantation to improve its near-surface mechanical properties has been investigated. 300 keV Ti+ ions at various doses were implanted and the concentration and damage profiles characterised using Rutherford Backscattering (RBS). At high doses (≥ 3 × 1016 Ti+ cm−2), a surface amorphous layer is formed due to implantation-induced damage. Nanoindentation was used to determine the hardness behaviour of the ion-implanted layer. Hardness increases at low implantation doses, associated with implantation-induced damage, but it is also observed that chemomechanical softening of the surface is reduced due to the removal of adsorbed water. In situ Raman scattering measurements demonstrate this removal at low doses and the re-establishment of the adsorbed water layer at high doses. The adsorption process is changed due to the introduction of carbon into the sapphire surface during implantation. For the optimum-implanted dose, the water readsorption does not recur even several years after the implantation treatment was first carried out. The loss of water adsorption is related to the formation of a non-polar carbonaceous layer on the sapphire surface by cracking of back-streamed diffusion pump oil deposited on the sample surface by inelastic collisions with the ion beam. Based on this study, it is concluded that ion implantation with an appropriate ion species and dose can control the chemomechanical effect and improve the hardness of ceramics, such as sapphire.

scholarly journals A Study on the Wettability of Ion-Implanted Stainless and Bearing Steels

Metals ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 208 ◽  
Author(s):  
Xinchun Chen ◽  
Xuan Yin ◽  
Jie Jin
Keyword(s):  
Stainless Steel ◽  
Ion Implantation ◽  
Ion Beam ◽  
Bearing Steel ◽  
Contact Angles ◽  
Electrochemical Technique ◽  
Near Surface ◽  
Thermodynamic Stabilization ◽  
Deposition Processes ◽  
Surface Modified

To satisfy the harsh service demand of stainless steel and aviation bearing steel, the anticorrosion and wettability behaviors of 9Cr18 stainless steel and M50 bearing steel tailored by ion beam surface modification technology were experimentally investigated. By controlling the ion implantation (F+, N+, N+ + Ti+) or deposition processes, different surface-modified layers and ceramic layers or composite layers with both effects (ion implantation and deposition processes) were obtained on metal surfaces. The wettability was characterized by a contact angle instrument, and the thermodynamics stabilization of ion implantation-treated metals in corrosive solution was evaluated through an electrochemical technique. X-ray photoelectron spectroscopy (XPS) was employed for detecting the chemical bonding states of the implanted elements. The results indicated that ion implantation or deposition-induced surface-modified layers or coating layers could increase water contact angles, namely improving hydrophobicity as well as thermodynamic stabilization in corrosive medium. Meanwhile, wettability with lubricant oil was almost not changed. The implanted elements could induce the formation of new phases in the near-surface region of metals, and the wettability behaviors were closely related to the as-formed ceramic components and amorphous sublayer.

scholarly journals Intragranular Residual Stress Evaluation Using the Semi-Destructive FIB-DIC Ring-Core Drilling Method

2014 ◽  
Vol 996 ◽  
pp. 8-13 ◽  
Author(s):  
Alexander J.G. Lunt ◽  
Alexander M. Korsunsky
Keyword(s):  
Residual Stress ◽  
Residual Stresses ◽  
Titanium Aluminide ◽  
Ion Beam ◽  
Sample Surface ◽  
Image Correlation ◽  
Near Surface ◽  
Core Drilling ◽  
Drilling Method ◽  
Ring Core

Titanium aluminide (TiAl) is a lightweight intermetallic compound with a range of exceptional mid-to-high temperature mechanical properties. These characteristics have the potential to deliver significant weight savings in aero engine components. However, the relatively low ductility of TiAl requires improved understanding of the relationship between manufacturing processes and residual stresses in order to expand the use of such components in service. Previous studies have suggested that stress determination at high spatial resolution is necessary to achieve better insight. The present paper reports progress beyond the current state-of-the-art towards the identification of the near-surface intragranular residual stress state in cast and ground TiAl at a resolution better than 5μm. The semi-destructive ring-core drilling method using Focused Ion Beam (FIB) and Digital Image Correlation (DIC) was used for in-plane residual stress estimation in ten grains at the sample surface. The nature of the locally observed strain reliefs suggests that tensile residual stresses may have been induced in some grains by the unidirectional grinding process applied to the surface.

Radiation Effects in Nonmetals: Amorphization, Phase Decomposition, and Nanoparticles

1998 ◽  
Vol 540 ◽  
Author(s):  
A. Meldrum ◽  
L.A. Boatner ◽  
C.W. White ◽  
D.O. Henderson
Keyword(s):  
Ion Implantation ◽  
Electron Irradiation ◽  
Radiation Effects ◽  
Elevated Temperatures ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Semiconductor Nanocrystals ◽  
Heavy Ion ◽  
Fused Silica ◽  
Near Surface

AbstractRadiation effects in nonmetals have been studied for well over a century by geologists, mineralogists, physicists, and materials scientists. The present work focuses on recent results of investigations of the ion-beam-induced amorphization of the ABO4 compounds – including the orthophosphates (LnPO4; Ln = lanthanides) and the orthosilicates: zircon (ZrSiO4), hafnon (HfSiO4), and thorite (ThSiO4). In the case of the orthosilicates, heavy-ion irradiation at elevated temperatures causes the precipitation of a nanocrystalline metal oxide. Electron irradiation effects in these amorphized insulating ceramics can produce localized recrystallization on a nanometer scale. Similar electron irradiation techniques were used to nucleate monodispersed compound semiconductor nanocrystals formed by ion implantation of the elemental components into fused silica. Methods for the formation of novel structural relationships between embedded nanocrystals and their hosts have been developed and the results presented here demonstrate the general flexibility of ion implantation and irradiation techniques for producing unique near-surface microstructures in ion-implanted host materials.

Ion Implantation Damage and Annealing in GaSb

1993 ◽  
Vol 316 ◽  
Author(s):  
S. Iyer ◽  
R. Parakkat ◽  
B. Patnaik ◽  
N. Parikh ◽  
S. Hegde
Keyword(s):  
Ion Implantation ◽  
Surface Damage ◽  
Liquid Nitrogen Temperature ◽  
Amorphous Layer ◽  
Implantation Technique ◽  
Near Surface ◽  
Projected Range ◽  
Implantation Damage ◽  
Pb Ions ◽  
Better Than

ABSTRACTIon implantation technique is being investigated as an alternate technique for doping GaSb. Hence an understanding of the production and removal of the damage is essential. In this paper, we report on the damages produced by implantation of Te, Er, Hg and Pb ions into undoped (100) GaSb single crystals and their recovery by Rutherford backscattering (RBS)/channeling. The implantations of 1013 to 1013 ions/cm2 in GaSb were done at liquid nitrogen temperature at energies corresponding to the same projected range of 447Å. A comparison of the damage produced by the different ions and their recovery was made by RBS/channeling along <100> axis of GaSb. Near surface damage equivalent to that of an amorphous layer was observed even at lower doses. Upon annealing at 600°C for 30 sec., the Te implanted samples showed best recovery compared to others (Xmin = 11%), the value of Xmin being better than those normally observed in unimplanted Te-doped substrates.

The effect of annealing environments on the epitaxial recrystallization of ion-beam-amorphized SrTiO3

1992 ◽  
Vol 7 (3) ◽  
pp. 717-724 ◽  
Author(s):  
J. Rankin ◽  
J.C. McCallum ◽  
L.A. Boatner
Keyword(s):  
Activation Energy ◽  
Solid Phase ◽  
Ion Beam ◽  
Amorphous Layer ◽  
Surface Layers ◽  
Time Resolved ◽  
Near Surface ◽  
Thermally Induced ◽  
Stage Process ◽  
Single Constant

Time-resolved reflectivity and Rutherford backscattering spectroscopy were used to investigate the effects of regrowth environments on the thermally induced solid phase epitaxial (SPE) regrowth of amorphous near-surface layers produced by ion implantation of single-crystal SrTiO3. Water vapor in the regrowth atmosphere was found to alter both the apparent rate and activation energy of the SPE regrowth. For relatively dry atmospheres, a single constant regrowth rate is observed at any given temperature, and the activation energy is 1.2 ± 0.1 eV. When the concentration of H2O vapor in the atmosphere is increased, however, the regrowth activation energy effectively decreases to ∼0.95 eV. When regrown in atmospheres containing H2O vapor, the SrTiO3 amorphous layer exhibits two distinct stages of SPE regrowth as compared to the single rate found for dry anneals. This two-stage process apparently results from the diffusion of H/OH from the regrowth atmosphere at the surface of the crystal through the amorphous layer to the regrowing crystalline/amorphous interface.

Ion Beam Processing

MRS Bulletin ◽  
1987 ◽  
Vol 12 (2) ◽  
pp. 18-21
Author(s):  
C.W. White
Keyword(s):  
Ion Implantation ◽  
Large Scale ◽  
Wide Spectrum ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Surface Region ◽  
Ion Beams ◽  
Group V ◽  
Near Surface ◽  
Research Activities

Ion beams are used extensively in materials research for processing and synthesis as well as for characterization. In the last few years, enormous advances have been made regarding the use of ion beams for processing or synthesis, and this issue of the MRS BULLETIN will review some of those advances. (The use of ion beams for materials characterization will be the subject of a future issue of the BULLETIN.) The areas covered in this issue are ion implantation, ion beam mixing, ion-assisted deposition, and direct ion beam deposition. For each area, recognized experts in the field prepared overview articles that should be very interesting to those who are not active in the field, and that should be useful to other experts in the field.The first large-scale use of ion beams for materials modification took place in the semiconductor industry more than 20 years ago when ion implantation began to be used to dope the near-surface region of silicon with Group III or Group V dopants. The use of ion implantation in the semiconductor industry has undergone explosive growth, and today almost all electronic devices are fabricated utilizing at lest one ion implantation step.In addition to the semiconductor area, research is being carried out using ion implantation in a multitude of other areas which include ceramics, metals and alloys, insulators, etc. The article on “Ion Implantation” by S.T. Picraux and P.S. Peercy provides an excellent overview of current research activities involving ion implantation of a wide spectrum of materials.

Ion Implantation of Ti INTO LiNbO3: Fabrication of Waveguides and Simple Modulators

1989 ◽  
Vol 152 ◽  
Author(s):  
C. W. White ◽  
D. K. Thomas ◽  
P. R. Ashley ◽  
W. S. C. Chang ◽  
C. Buchal
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Surface Region ◽  
Amorphous Region ◽  
Index Of Refraction ◽  
Near Surface ◽  
Channel Waveguides ◽  
High Doses ◽  
Water Saturated ◽  
Saturated Oxygen

ABSTRACTIon implantation has been used to introduce Ti at very high doses (>3 × 1017 /cm2) into the near-surface region of LiNbO3 to change the index of refraction.’ In the as-implanted state, the near surface is amorphous. Thermal annealing in water-saturated oxygen 1000°C crystallizes the amorphous region and incorporates the Ti into substitutional sites in the lattice at concentrations that exceed 10 at.%. Recrystallization takes place by solid-phase epitaxy. Both planar and channel waveguides have been fabricated with optical attenuations of <1 dB/cm. Both Mach-Zehnder and Bragg modulators have been fabricated using Ti implantation of LiNbO3. The characteristics of these devices have been determined and will be reported. The higher Ti concentrations which can be achieved by implantation allows tighter mode confinement and smaller mode profiles than with Ti-diffused guides.

Crack Nucleation in ion Beam Irradiated Magnesium Oxide and Sapphire Crystals

1997 ◽  
Vol 504 ◽  
Author(s):  
V. N. Gurarie ◽  
D. N. Jamieson ◽  
R. Szymanski ◽  
A. V. Orlov ◽  
J. S. Williams
Keyword(s):  
Thermal Stress ◽  
Ion Implantation ◽  
Magnesium Oxide ◽  
Stress Resistance ◽  
Large Scale ◽  
Crack Nucleation ◽  
Ion Beam ◽  
High Energy ◽  
Pulsed Plasma ◽  
Near Surface

ABSTRACTMonocrystals of magnesium oxide and sapphire have been subjected to ion implantation with 86 keV Si− ions to a dose of 5×1016 cm−2 and with 3 MeV H+ ions with a dose of 4.8×1017 cm−2 prior to thermal stress testing in a pulsed plasma. Fracture and deformation characteristics of the surface layer were measured in ion implanted and unimplanted samples using optical and scanning electron microscopy. Ion implantation is shown to modify the near-surface structure of samples by introducing damage, which makes crack nucleation easier under the applied stress. The effect of ion dose on the thermal stress resistance is investigated and the critical doses which produce a noticeable change in the stress resistance is determined for sapphire crystals implanted with 86 keV Si−. In comparison with 86 keV Si− ions the high energy implantation of sapphire and magnesium oxide crystals with 3 MeV H+ ions results in the formation of large-scale defects, which produce a low density crack system and cause a considerable reduction in the resistance to damage. Fracture mechanics principles are applied to evaluate the size of the implantation-induced microcracks which are shown to be comparable with the ion range and the damage range in the crystals tested. Possible mechanisms of crack nucleation for a low and high energy ion implantation are discussed.

Microstructure and Composition of Surface Layers Formed by Ion Implantation of Nitrogen in High-Purity Aluminum

1988 ◽  
Vol 100 ◽  
Author(s):  
Robert C. Mccune ◽  
W. T. Donlon ◽  
H. K. Plummer ◽  
L. Toth ◽  
F. W. Kunz
Keyword(s):  
Ion Implantation ◽  
Ion Beam ◽  
Pure Aluminum ◽  
Surface Region ◽  
Nuclear Reaction Analysis ◽  
Surface Layers ◽  
Near Surface ◽  
Transmission Electron ◽  
High Purity Aluminum ◽  
Nitrogen Contents

ABSTRACTSurface layers with overall thickness <∼300 nm were produced by ion implantation of N+ or N2+ at energies of 50 or 100 keV in 99.99% pure aluminum. These surfaces were characterized by scanning and transmission electron microscopy, Auger electron spectroscopy, Rutherford backscattering, nuclear reaction analysis and particle-induced X-ray analysis. At doses above 2×1017 N2/cm2 , blistering of the surfaces was observed along with a reduction in the extent of the coulometric dose retained by the material. Oxygen is believed to be introduced into the near-surface region by a process of reaction and ion-beam mixing, as well as possible CO contamination of the beam. A phase, isostructural with AlN, forms semi-coherently with parent aluminum grains, however, some fraction of the metallic aluminum phase remains in the reaction layer, even at overall nitrogen contents which exceed the stoichiometry of AlN.

Amorphization of elemental and compound semiconductors upon ion implantation

1991 ◽  
Vol 6 (5) ◽  
pp. 1048-1054 ◽  
Author(s):  
K.S. Jones ◽  
C.J. Santana
Keyword(s):  
Monte Carlo ◽  
Ion Implantation ◽  
Density Distribution ◽  
Bond Energy ◽  
Ion Beam ◽  
Compound Semiconductors ◽  
Amorphous Layer ◽  
Thermochemical Data ◽  
Energy Estimates ◽  
Cross Sectional

Cross-sectional TEM studies of ion implantation induced amorphization in a large number of semiconductors have been performed. Samples of Si, AlAs, GaAs, GaP, GaSb, InP, InAs, and ZnSe were simultaneously implanted at 77 K with 20 keV Si+ at doses between 1 × 1014/cm2 and 1 × 1016/cm2. A dose of 1 × 1015/cm2 minimized the ion beam induced epitaxial crystallization and sputtering effects. The depth of the amorphous layer at this dose was compared with Monte Carlo damage density distribution calculations (TRIM'90). The threshold damage density (TDD) necessary for amorphization was determined for each compound. The values of the threshold damage density vary from as low as 2.4 × 1019 keV/cm3 for InAs up to 7.3 × 1020 keV/cm3 for AlAs. ZnSe never became amorphous and GaSb exhibited an unusual disordering after the highest dose. The values of the threshold damage density for the various compositions were compared with known thermochemical data and several bond energy estimates. No single calculation explained all of the trends observed.

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