Structural Transformation During the Epitaxial Growth of a System with a Large Misfit: MBE Study of Ni on Au (100)

1993 ◽  
Vol 317 ◽  
Author(s):  
B. Gilles ◽  
A. Marty ◽  
G. Patrat ◽  
J.L. Vassent ◽  
J.C. Joud ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Structural Transformation ◽  
Stacking Faults ◽  
High Density ◽  
Interfacial Stress

ABSTRACTThe growth of Ni on Au (100) has been investigated by MBE. It has been found that a Metastable BCT Ni (100) phase is coherent with the substrate up to a thickness of 5 ML. Then a structural transformation analogous to a raartensitic transition occurs, and the structure becomes FCC Ni (110). We show that the interfacial stress is progressively relieved by a high density of stacking faults, as was predicted by Bruinsma and Zangwill for epitaxial overlayers with a large Misfit.

Self-Assembled Epitaxial Growth of High Density β-FeSi2Nanodots on Si (001) and Their Spatially Resolved Optical Absorption Properties

2008 ◽  
Vol 8 (8) ◽  
pp. 3019-3023 ◽  
Author(s):  
Yoshiaki Nakamura ◽  
Shogo Amari ◽  
Nobuyasu Naruse ◽  
Yutaka Mera ◽  
Koji Maeda ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Epitaxial Growth ◽  
High Density ◽  
Absorption Properties ◽  
Spatially Resolved ◽  
Self Assembled

Threading Dislocation Density Reduction in GaN/Sapphire Heterostructures.

1999 ◽  
Vol 595 ◽  
Author(s):  
A. Kvit ◽  
A. K. Sharma ◽  
J. Narayan
Keyword(s):  
Basal Plane ◽  
Stacking Faults ◽  
High Density ◽  
Thin Layers ◽  
Interfacial Region ◽  
Threading Dislocation ◽  
Threading Dislocations ◽  
Misfit Dislocations ◽  
Plan View ◽  
Partial Dislocations

AbstractLarge lattice mismatch between GaN and α-Al2O3 (15%) leads to the possibility of high threading dislocation densities in the nitride layers grown on sapphire. This investigation focused on defect reduction in GaN epitaxial thin layer was investigated as a function of processing variables. The microstructure changes from threading dislocations normal to the basal plane to stacking faults in the basal plane. The plan-view TEM and the corresponding selected-area diffraction patterns show that the film is single crystal and is aligned with a fixed epitaxial orientation to the substrate. The epitaxial relationship was found to be (0001)GaN∥(0001)Sap and [01-10]GaN∥[-12-10]Sap. This is equivalent to a 30° rotation in the basal (0001) plane. The film is found to contain a high density of stacking faults with average spacing 15 nm terminated by partial dislocations. The density of partial dislocations was estimated from plan-view TEM image to be 7×109 cm−2. The cross-section image of GaN film shows the density of stacking faults is highest in the vicinity of the interface and decreases markedly near the top of the layer. Inverted domain boundaries, which are almost perpendicular to the film surface, are also visible. The concentration of threading dislocation is relatively low (∼;2×108 cm−2), compared to misfit dislocations. The average distance between misfit dislocations was found to be 22 Å. Contrast modulations due to the strain near misfit dislocations are seen in high-resolution cross-sectional TCM micrograph of GaN/α-Al2O3 interface. This interface is sharp and does not contain any transitional layer. The interfacial region has a high density of Shockley and Frank partial dislocations. Mechanism of accommodation of tensile, sequence and tilt disorder through partial dislocation generation is discussed. In order to achieve low concentration of threading dislocations we need to establish favorable conditions for some stacking disorder in thin layers above the film-substrate interface region.

Growth of SiC Microwires through Si Microwires Carburization

2011 ◽  
Vol 679-680 ◽  
pp. 512-515 ◽  
Author(s):  
Maelig Ollivier ◽  
Arnaud Mantoux ◽  
Edwige Bano ◽  
Konstantinos Rogdakis ◽  
Konstantinos Zekentes ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Raman Spectroscopy ◽  
Process Optimization ◽  
Gold Catalyst ◽  
Stacking Faults ◽  
Morphological Characterization ◽  
High Density ◽  
Silicon Microwires

Silicon microwires (MWs) previously synthesized using the VLS method with gold catalyst are being carburized at 1100°C under methane aiming to their conversion to SiC. SEM, TEM as well as XPS and Raman spectroscopy were used for structural and morphological characterization. After carburization achievement, SiC is found to be polycrystalline with a high density of stacking faults associated to an increase of surface roughness. Directions for the carburization process optimization are given.

scholarly journals Microstructure Evolution Mechanism of Wf/Cu82Al10Fe4Ni4 Composites under Dynamic Compression at Different Temperatures and Strain Rates

Materials ◽  
2021 ◽  
Vol 14 (19) ◽  
pp. 5563
Author(s):  
Zhe Wu ◽  
Yang Zhang ◽  
Haifeng Jiang ◽  
Shuai Zhao ◽  
Qingnan Wang
Keyword(s):  
Copper Alloy ◽  
Split Hopkinson Pressure Bar ◽  
Dynamic Compression ◽  
Stacking Faults ◽  
High Density ◽  
Second Phase ◽  
Strain Rates ◽  
Alloy Matrix ◽  
Pressure Infiltration ◽  
Different Temperatures

Wf/Cu82Al10Fe4Ni4 composites were fabricated by the pressure infiltration method. The composites were compressed by means of a split Hopkinson pressure bar (SHPB) with strain rates of 800 and 1600 s−1 at different temperatures. The microstructure of the composites after dynamic compressing was analyzed by transmission electron microscopy (TEM). Observation revealed that there were high-density dislocations, stacking faults, twins, and recrystallization existing in the copper alloy matrix of the composites. High-density dislocations, stacking faults, and twins were generated due to the significant plastic deformation of the copper alloy matrix under dynamic load impact. We also found that the precipitated phase of the matrix played a role in the second phase strengthening; recrystallized microstructures of copper alloy were generated due to dynamic recrystallization of the copper alloy matrix under dynamic compression at high temperatures.

Formation of high-density stacking faults in ceramic films induced by Ti transition layer

2022 ◽  
Vol 211 ◽  
pp. 114496
Author(s):  
Yanmeng Chen ◽  
Tao Guo ◽  
Xiaolu Pang ◽  
Lijie Qiao
Keyword(s):  
Transition Layer ◽  
Stacking Faults ◽  
High Density ◽  
Ceramic Films

Analysis and Reduction of Stacking Faults in Fast Epitaxial Growth

2016 ◽  
Vol 858 ◽  
pp. 173-176 ◽  
Author(s):  
Hideyuki Uehigashi ◽  
Keisuke Fukada ◽  
Masahiko Ito ◽  
Isaho Kamata ◽  
Hiroaki Fujibayashi ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Growth Rate ◽  
Epitaxial Growth ◽  
Stacking Faults ◽  
High Growth ◽  
High Growth Rate ◽  
X Ray ◽  
Crystalline Defects ◽  
Transmission Electron

We have developed a single-wafer vertical epitaxial reactor which realizes high-throughput production of 4H-SiC epitaxial layer (epilayer) with a high growth rate [1,2]. In this paper, in order to evaluate the crystalline defects which can affect the characteristics of devices, we investigated the formation of variety of in-grown stacking faults (SFs) in detail. Synchrotron X-ray topography, photoluminescence (PL) and transmission electron microscopy are employed to analyze the SFs and the origins of the SF formation are discussed. The result in reducing in-grown SFs in fast epitaxial growth is also shown.

Controlled Growth and Characterization of Non-tapered InN Nanowires on Si(111) Substrates by Molecular Beam Epitaxy

2009 ◽  
Vol 1178 ◽  
Author(s):  
Yi-Lu Chang ◽  
Arya Fatehi ◽  
Feng Li ◽  
Zetian Mi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Room Temperature ◽  
Molecular Beam ◽  
Stacking Faults ◽  
Seeding Layer ◽  
Mbe Growth ◽  
Molecular Beam Epitaxial

AbstractWe have performed a detailed investigation of the molecular beam epitaxial (MBE) growth and characterization of InN nanowires spontaneously formed on Si(111) substrates under nitrogen rich conditions. Controlled epitaxial growth of InN nanowires (NWs) has been demonstrated by using an in situ deposited thin (˜ 0.5 nm) In seeding layer prior to the initiation of growth. By applying this technique, we have achieved non-tapered epitaxial InN NWs that are relatively free of dislocations and stacking faults. Such InN NW ensembles display strong photoluminescence (PL) at room temperature and considerably reduced spectral broadening, with very narrow spectral linewidths of 22 and 40 meV at 77 K and 300 K, respectively.

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