Effect of Pb Content on the Transformation of Sputtered PbxZr0.4Ti0.6O3 Thin Film

1993 ◽  
Vol 321 ◽  
Author(s):  
Jae-Hyun Joo ◽  
Deok-Sin Kill ◽  
Seung-Ki Joo
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Transition Temperature ◽  
Temperature Region ◽  
Transformation Temperature ◽  
Perovskite Phase ◽  
Effective Medium Approximation ◽  
Transformation Kinetics ◽  
Pzt Films

ABSTRACTPZT (PbxZr0.4Ti0.6O3) thin films were prepared by reactive co-sputtering and annealed by RTA (Rapid Thermal Annealing). Transformation kinetics and effect of Pb content on the transformation were intensively studied using EMA (Effective Medium Approximation). It has been found that depending on Pb content as well as RTA temperature, the crystal structure of PZT films changed greatly. It turned out that the transformation temperature for the perovskite phase can be lowered and the width of transition temperature region was reduced by increasing Pb content in the films. Dependence of transformation path on the Pb content has been studied.

scholarly journals Fabrication, micro-structure characteristics and transport properties of co-evaporated thin films of Bi2Te3 on AlN coated stainless steel foils

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Aziz Ahmed ◽  
Seungwoo Han
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Stainless Steel ◽  
Substrate Temperature ◽  
Transport Properties ◽  
Structural Defects ◽  
Film Composition ◽  
High Substrate ◽  
Foil Substrate

AbstractN-type bismuth telluride (Bi2Te3) thin films were prepared on an aluminum nitride (AlN)-coated stainless steel foil substrate to obtain optimal thermoelectric performance. The thermal co-evaporation method was adopted so that we could vary the thin film composition, enabling us to investigate the relationship between the film composition, microstructure, crystal preferred orientation and thermoelectric properties. The influence of the substrate temperature was also investigated by synthesizing two sets of thin film samples; in one set the substrate was kept at room temperature (RT) while in the other set the substrate was maintained at a high temperature, of 300 °C, during deposition. The samples deposited at RT were amorphous in the as-deposited state and therefore were annealed at 280 °C to promote crystallization and phase development. The electrical resistivity and Seebeck coefficient were measured and the results were interpreted. Both the transport properties and crystal structure were observed to be strongly affected by non-stoichiometry and the choice of substrate temperature. We observed columnar microstructures with hexagonal grains and a multi-oriented crystal structure for the thin films deposited at high substrate temperatures, whereas highly (00 l) textured thin films with columns consisting of in-plane layers were fabricated from the stoichiometric annealed thin film samples originally synthesized at RT. Special emphasis was placed on examining the nature of tellurium (Te) atom based structural defects and their influence on thin film properties. We report maximum power factor (PF) of 1.35 mW/m K2 for near-stoichiometric film deposited at high substrate temperature, which was the highest among all studied cases.

Electrical Properties of Multilayer Synthesized CuInSi Thin Film

2011 ◽  
Vol 383-390 ◽  
pp. 822-825
Author(s):  
Ping Luan ◽  
Jian Sheng Xie ◽  
Jin Hua Li
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
Time Effect ◽  
X Ray Diffraction ◽  
Testing Instrument ◽  
X Ray ◽  
Conductivity Type

Using magnetron sputtering technology, the CuInSi thin films were prepared by multilayer synthesized method. The structure of CuInSi films were detected by X-ray diffraction(XRD), the main crystal phase peak is at 2θ=42.458°; The resistivity of films were measured by SDY-4 four-probe meter; The conductive type of the films were tested by DLY-2 conductivity type testing instrument. The results show that the annealing temperature and time effect on the crystal resistivity and crystal structure greatly.

The Microstructure, Phase and Ferroelectric Properties of PZT Thin Films on Oriented Multilayer Electrodes

1999 ◽  
Vol 596 ◽  
Author(s):  
Tingkai Li ◽  
Sheng Teng Hsu ◽  
Yufei Gao ◽  
Mark Engelhard
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Hysteresis Loop ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Pyrochlore Phase ◽  
Experimental Results ◽  
Butyl Ether ◽  
Pzt Thin Films ◽  
Pzt Thin Film

AbstractThree kinds of oriented electrodes of Pt, Ir and Pt/Ir electrodes were prepared using electron beam evaporation techniques for deposition of PZT thin films. An oxide MOCVD reactor with liquid delivery system was used for the growth of PZT thin films. [Pb(thd)2], Zr(TMHD)4 and Ti(IPO)4 were dissolved in a mixed solvent of tetrahydrofuran or butyl ether, isopropanol and tetraglyme to form a precursor source. The deposition temperature and pressure were 500 - 650°C and 5 - 10 Torr, respectively. The experimental results showed PZT thin film deposited on various electrodes had different phase formation, microstructure and ferroelectric property. The X-ray patterns showed the perovskite phase of PZT was formed on both Ir and Pt/Ir electrodes at 550°C. The grain size of the PZT thin film increases after a further, higher temperature annealing. The as-deposited PZT thin film on Pt electrode exhibits pyrochlore phase at 550°C. The phase is transformed to perovskite phase after 650°C annealing. The experimental results also indicated that the MOCVD PZT thin film on Pt/Ir exhibits better ferroelectric and electrical properties compared to those deposited on Pt and Ir electrodes. A 300 nm thick PZT thin film on Pt/Ir electrode has a square, well saturated, and symmetrical hysteresis loop with 2Pr value of 40 μC/cm2 and 2Ec of 73 kV/cm at an applied voltage of 5 V. The hysteresis loop of the PZT thin film is almost saturated at 2 V. The leakage current of the film is 6.16 × 10−7 A/cm2 at 100 KV/cm. The electrode effects on ferroelectric properties of PZT thin films also have been investigated.

Lattice parameters and optical absorption of CuIn1-xGaxSe2 thin films

1999 ◽  
Vol 77 (7) ◽  
pp. 515-520
Author(s):  
AAI Al-Bassam
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Grain Size ◽  
Lattice Parameters ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lattice Constants ◽  
Cubic Structure ◽  
Ga Content

Thin film polycrystalline solar cells based on CuIn1–xGaxSe2 have been fabricated and studied with x values from 0 to 1.0. The lattice parameters, grain size, and band gap were measured. Crystal structure and X-ray data of CuIn1–xGaxSe2 were determined using X-ray diffractometry. These materials had a cubic structure with x ≥ 0.5 and a tetragonal structure with x ≤ 0.5. The lattice constants vary linearly with composition. Grain size was measured using X-ray diffraction where the grain size increased linearly with Ga content. A grain size of 1.83-3.52 μm was observed with x ≤ 0.5, while it increased to 4.53 μm for x = 0.58.PACS No.: 70.73

Influence of Platinum Bottom Electrodes on the Piezoelectric Performance of PZT Thin Films Hot Sputtered in a High Volume Production Tool

2012 ◽  
Vol 1397 ◽  
Author(s):  
Dirk Kaden ◽  
Hans-Joachim Quenzer ◽  
Martin Kratzer ◽  
Lorenzo Castaldi ◽  
Bernhard Wagner ◽  
...  
Keyword(s):  
Thin Films ◽  
Volume Fraction ◽  
Perovskite Phase ◽  
Annealing Treatment ◽  
High Volume ◽  
Deposition Process ◽  
Pzt Thin Films ◽  
Pzt Films ◽  
High Volume Production ◽  
Volume Production

ABSTRACTIn this work high quality ferroelectric PZT films have been prepared in-situ by hot RF magnetron sputtering. 200 mm wafer were coated with PZT films of 1 μm and 2 μm thickness at sputter rates of 45 nm/min in a high volume production sputtering tool. The films were grown on oxidized Si substrates prepared either with sputtered Ti/TiO2/Pt, sputtered Ti/TiO2/Pt/TiO2 or evaporated Ti/Pt bottom electrodes at substrate holder temperatures in the range from 550 °C to 700 °C. At these temperatures, the material nucleates in the requisite piezoelectric perovskite phase without need of an additional post annealing treatment.The films were investigated with respect to their chemical composition and their crystallographic, piezoelectric and dielectric properties. At an intermediate chuck temperature of 600 °C the PZT thin films were characterized by a minimum volume fraction of secondary nonpiezoelectric phases. A Zr/(Zr+Ti) ratio of 0.53 has been achieved matching the morphotropic phase boundary. By improving the deposition process and poling procedure, a notable high e31,f coefficient of -17.3 C/m2 has been obtained. The corresponding longitudinal piezoelectric constant was determined to have an effective longitudinal piezoelectric coefficient d33,f of 160 pm/V.

The Development of CZTS Thin Films for Solar Cells

2012 ◽  
Vol 182-183 ◽  
pp. 237-240
Author(s):  
Nian Jing Ji ◽  
Ke Gao Liu ◽  
Zhong Quan Ma
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Solar Cells ◽  
Thin Film Solar Cells ◽  
Czts Thin Film ◽  
Potential Candidate ◽  
Composition Ratio ◽  
Photoelectric Performance ◽  
Czts Thin Films

CZTS thin film, a potential candidate for application as absorber layer in thin film solar cells, has drawn much attention in these years due to its excellent photoelectric performance and nontoxic components. It provides a brief description of the development of CZTS thin film for solar cells, and surveys several methods of depositing CZTS films, then introduces the crystal structure of CZTS which is a problem for composition ratio affecting the properties of CZTS thin films. Here we also outline the development and the structure of solar cells based on CZTS thin films.

Effect of Stacking Layers on the Structure and Properties of Ca(Mg1/3Nb2/3)O3 / CaTiO3 Thin Films

2009 ◽  
Vol 421-422 ◽  
pp. 115-118
Author(s):  
Jing Zhou ◽  
Jie Zhu ◽  
Wen Chen ◽  
Jie Shen ◽  
Qiong Lei ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Perovskite Phase ◽  
Pechini Method ◽  
Second Phase ◽  
Structure And Properties ◽  
Dense Microstructure ◽  
Microwave Dielectric ◽  
Pure Perovskite Phase ◽  
Film Layer

Effect of stacking layers on the structure and properties of Ca(Mg1/3Nb2/3)O3/CaTiO3 (CMN/CT) microwave dielectric heterogeneous thin films prepared was investigated. Precursor solutions for CMN and CT synthesis were obtained by Pechini method. The arrangement pattern has affected structure and properties of heterogeneous thin film. The CMN-CT arrangement heterostructure thin film has second phase from the CMN films layer. The CT-CMN heterostructure film which has a smooth and dense microstructure was composed of pure perovskite phase without any second phase, this result was attributed to the CT film layer which is a buffer layer between substrate and CMN film layer. At 1MHz frequency, CT-CMN exhibits the dielectric properties of εr=47.5, tanδ=0.020.

Structure and Dielectric Properties of Mg, Cr-Doped LaSrFeO3 Films

2014 ◽  
Vol 538 ◽  
pp. 11-14
Author(s):  
Yang Lu Hou ◽  
Xing Hua Fu ◽  
Wen Hong Tao ◽  
Xin Jin
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Dielectric Properties ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Doping Amount ◽  
Single Perovskite Phase ◽  
Pure Perovskite Phase ◽  
Mg Doped

Mg-doped LaFeO3 thin film and Mg, Cr-doped La0.5Sr0.5FeO3 thin films were prepared by the sol-gel method. The change rules of structure and dielectric properties of the films were studied by XRD, SEM, and Agilent. The dielectric properties of La0.5Sr0.5FeO3 and LaFeO3 films were improved by the substitute with Mg and Cr. The doping amount of Mg and Cr for the optimal dielectric properties of La0.5Sr0.5FeO3 films is 45mol%, 25mol%, respectively, and for LaFeO3, the doping amount of Mg is 8mol%. The observed pure perovskite phase of the doped films suggested the dissolution of Mn, Co, and Ni in La0.5Sr0.5FeO3 crystal lattice. Mg and Cr were integrate in the lattice of LaFeO3 and La0.5Sr0.5FeO3, and mineral is single perovskite phase. The surface of the film is smooth, without cracks, surface grain size distribution and had uniform grain size.

Step Coverage of Pb(ZrTi)O3 Thin Films Grown by Mocvd

1996 ◽  
Vol 433 ◽  
Author(s):  
M. Shimizu ◽  
S. Hyodo ◽  
H. Fujisawa ◽  
H. Niu ◽  
T. Shiosaki
Keyword(s):  
Thin Films ◽  
Aspect Ratio ◽  
Growth Temperature ◽  
Perovskite Phase ◽  
Reaction Pressure ◽  
Step Coverage ◽  
Pzt Films

AbstractStep coverage of PZT grown by MOCVD was influenced by the growth temperature, the reaction pressure and the aspect ratio of the trench. PZT films grown on Si steps at growth temperatures ranging from 500 to 600°C and at reaction pressures ranging from 3 to 10Torr showed a step coverage of 52 to 86%. The step coverage of PZT grown at 600°C and at 5Torr – conditions which were suitable for the growth of perovskite phase – was 75%. The step coverage of Pt on Si and on SiO2 was 20% and 25%, respectively.

A Study on the Selective Nucleations for Formation of Large Single Grains in PZT Thin Films

1999 ◽  
Vol 596 ◽  
Author(s):  
Jang-Sik Lee ◽  
Eung-Chul Park ◽  
Jung-Ho Park ◽  
Byung-Il Lee ◽  
Seung-Ki Joo
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Perovskite Phase ◽  
Breakdown Field ◽  
Pzt Thin Films ◽  
Random Nucleation ◽  
Saturation Polarization ◽  
Pt Electrodes ◽  
Pzt Films ◽  
Pt Films

AbstractSelective nucleation and lateral growing method have been developed for high quality ferroelectric PZT(65/35) thin films using perovskite-phase PZT island seed. The PZT films on PZT seed island were transformed into the perovskite phase at temperatures as low as 540°C, which is 150°C lower than compared to that of PZT thin films deposited on Pt films. The temperature difference enables lateral growth without undesirable random nucleation. Maximum grain sizes of the perovskite-phase PZT films were determined by the annealing temperature. The PZT thin films show a leakage current density of 8×10−8 A/cm2, breakdown field of 1240 kV/cm, saturation polarization of 42 μC/cm2, and remanent polarization of 30 μC/cm2, whose values were maintained up to 2×1011 cycles. In this study, we show that when there was no grain boundary in the area measured, degradation such as fatigue and retention was not observed even with Pt electrodes. So the main source of degradation is the grain boundary in the PZT thin films.

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