Room Temperature Measurement of Photoluminescence Spectra of Semiconductors Using an Ft-Raman Spectrophotometer

1993 ◽  
Vol 324 ◽  
Author(s):  
J. D. Webb ◽  
D. J. Dunlavy ◽  
T. Ciszek ◽  
R. K. Ahrenkiel ◽  
M. W. Wanlass ◽  
...  
Keyword(s):  
Indium Arsenide ◽  
Room Temperature ◽  
Optical Devices ◽  
Stray Light ◽  
Gallium Indium Arsenide ◽  
Photoluminescence Spectra ◽  
Bulk Silicon ◽  
Copper Indium ◽  
Germanium Alloy ◽  
Ft Raman

AbstractThis paper demonstrates the utility of a Fourier transform (FT) Raman spectrophotometer in obtaining the room-temperature photoluminescence (PL) spectra of semiconductors used in photovoltaic and electro-optical devices. Sample types analyzed by FT-PL spectroscopy included bulk silicon and films of copper indium diselenide (CuInSej), gallium indium arsenide (GaInAs), indium phosphide arsenide, (InPAs), and gallium arsenide-germanium alloy (GaAsGe) on various substrates. The FTIR-PL technique exhibits advantages in speed, sensitivity, and freedom from stray light over conventional dispersive methods, and can be used in some cases to characterize complete semiconductor devices as well as component materials at room temperature. Recent innovations that improve the spectral range of the technique and eliminate instrumental spectral artifacts are described.

Room-Temperature Measurement of Photoluminescence Spectra of Semiconductors Using an FT-Raman Spectrophotometer

1993 ◽  
Vol 47 (11) ◽  
pp. 1814-1819 ◽  
Author(s):  
J. D. Webb ◽  
D. J. Dunlavy ◽  
T. Ciszek ◽  
R. K. Ahrenkiel ◽  
M. W. Wanlass ◽  
...  
Keyword(s):  
Room Temperature ◽  
Optical Devices ◽  
Stray Light ◽  
Gallium Indium Arsenide ◽  
Photoluminescence Spectra ◽  
Bulk Silicon ◽  
Copper Indium ◽  
Germanium Alloy ◽  
Ft Ir ◽  
Ft Raman

This paper demonstrates the utility of an FT-Raman accessory for an FT-IR spectrophotometer in obtaining the room-temperature photoluminescence (PL) spectra of semiconductors used in photovoltaic and electro-optical devices. Sample types analyzed by FT-IR/PL spectroscopy included bulk silicon and films of gallium indium arsenide phosphide (GaInAsP), copper indium diselenide (CuInSe2), and gallium arsenide-germanium alloy on various substrates. The FT-IR/PL technique exhibits advantages in speed, sensitivity, and freedom from stray light over conventional dispersive methods, and can be used in some cases to characterize complete semiconductor devices as well as component materials at room temperature. Some suggestions for improving the spectral range of the technique and removing instrumental spectral artifacts are presented.

scholarly journals Prominent luminescence of silicon-vacancy defects created in bulk silicon carbide p–n junction diodes

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Fumiya Nagasawa ◽  
Makoto Takamura ◽  
Hiroshi Sekiguchi ◽  
Yoshinori Miyamae ◽  
Yoshiaki Oku ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Room Temperature ◽  
Photoluminescence Spectra ◽  
Bulk Silicon ◽  
Electron Dose ◽  
Vacancy Defects ◽  
Silicon Vacancy ◽  
Temperature Electron ◽  
Electroluminescence Intensity ◽  
Bulk Substrate

AbstractWe investigate fluorescent defect centers in 4H silicon carbide p–n junction diodes fabricated via aluminum-ion implantation into an n-type bulk substrate without the use of an epitaxial growth process. At room temperature, electron-irradiated p–n junction diodes exhibit electroluminescence originating from silicon-vacancy defects. For a diode exposed to an electron dose of $$1 \times 10^{18}\,{{\mathrm{cm}}}^{-2}$$ 1 × 10 18 cm - 2 at $$800\,{{\mathrm{keV}}}$$ 800 keV , the electroluminescence intensity of these defects is most prominent within a wavelength range of 400–$$1100\,{{\mathrm{nm}}}$$ 1100 nm . The commonly observed $${{\mathrm{D}}}_1$$ D 1 emission was sufficiently suppressed in the electroluminescence spectra of all the fabricated diodes, while it was detected in the photoluminescence measurements. The photoluminescence spectra also displayed emission lines from silicon-vacancy defects.

Ion Implantation in Gallium Indium Arsenide

1983 ◽  
Vol 27 ◽  
Author(s):  
M. Anjum ◽  
M. A. Shahid ◽  
S. S. Gill ◽  
B. J. Sealy ◽  
J. H. Marsh
Keyword(s):  
Ion Implantation ◽  
Indium Arsenide ◽  
Room Temperature ◽  
Gallium Indium Arsenide ◽  
High Dose ◽  
Long Time ◽  
Residual Damage ◽  
Heavily Doped

ABSTRACTWe have studied the formation of heavily doped n-type layers in LPE GaInAs using ion implantation. 400 keV selenium ions have been implanted in dose ranges of 5 × 1013 to 1 × 1015 cm−2 at room temperature. For the high dose implants we have reproducibly achieved activities of 20–40% and sheet Hall mobilities of 700–1000 cm−2 V−1 s−1 and peak carrier concentrations of about 1019 cm−3. TEM and RBS results indicate that for long time anneals residual damage persists in the implanted layers, however, anneals at 800°C for 30 seconds perfectly recrystallize the implanted layers.

Mechanical Properties and Dislocation Structure of Single Crystal Cdte Deformed in Compression at 300°C

1976 ◽  
Vol 34 ◽  
pp. 592-593
Author(s):  
Ernest L. Hall ◽  
J. B. Vander Sande
Keyword(s):  
Mechanical Properties ◽  
Single Crystal ◽  
Dislocation Structure ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Strain Curve ◽  
Optical Devices ◽  
Semiconductor Compound ◽  
Wide Range ◽  
Sample Orientation

The present paper describes research on the mechanical properties and related dislocation structure of CdTe, a II-VI semiconductor compound with a wide range of uses in electrical and optical devices. At room temperature CdTe exhibits little plasticity and at the same time relatively low strength and hardness. The mechanical behavior of CdTe was examined at elevated temperatures with the goal of understanding plastic flow in this material and eventually improving the room temperature properties. Several samples of single crystal CdTe of identical size and crystallographic orientation were deformed in compression at 300°C to various levels of total strain. A resolved shear stress vs. compressive glide strain curve (Figure la) was derived from the results of the tests and the knowledge of the sample orientation.

scholarly journals Structural and Enhanced Optical Properties of Stabilized γ‒Bi2O3 Nanoparticles: Effect of Oxygen Ion Vacancies

Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1023 ◽  
Author(s):  
Ashish Chhaganlal Gandhi ◽  
Chia-Liang Cheng ◽  
Sheng Yun Wu
Keyword(s):  
Room Temperature ◽  
Excess Oxygen ◽  
Ambient Atmosphere ◽  
Photoluminescence Spectra ◽  
X Ray Diffraction ◽  
X Ray ◽  
Band Emission ◽  
Oxygen Ion ◽  
Integrated Intensity ◽  
Effect Of Oxygen

We report the synthesis of room temperature (RT) stabilized γ–Bi2O3 nanoparticles (NPs) at the expense of metallic Bi NPs through annealing in an ambient atmosphere. RT stability of the metastable γ–Bi2O3 NPs is confirmed using synchrotron radiation powder X-ray diffraction and Raman spectroscopy. γ–Bi2O3 NPs exhibited a strong red-band emission peaking at ~701 nm, covering 81% integrated intensity of photoluminescence spectra. Our findings suggest that the RT stabilization and enhanced red-band emission of γ‒Bi2O3 is mediated by excess oxygen ion vacancies generated at the octahedral O(2) sites during the annealing process.

Electrical and Optical Properties of Si+ and P+ Implanted InP:Fe

1990 ◽  
Vol 201 ◽  
Author(s):  
Honglie Shen ◽  
Genqing Yang ◽  
Zuyao Zhou ◽  
Guanqun Xia ◽  
Shichang Zou
Keyword(s):  
Optical Properties ◽  
Silicon Nitride ◽  
Temperature Dependence ◽  
Optimal Condition ◽  
Room Temperature ◽  
Broad Band ◽  
Photoluminescence Spectra ◽  
Electrical And Optical Properties ◽  
Spectrum Measurement ◽  
Single Implant

AbstractDual implantations of Si+ and P+ into InP:Fe were performed both at 200°C and room temperature. Si+ ions were implanted by 150keV with doses ranging from 5×1013 /cm2 to 1×1015 /cm2, while P+ ions were implanted by 110keV. 160keV and 180keV with doses ranging from 1×l013 /cm2 to 1×1015 /cm2. Hall measurements and photoluminescence spectra were used to characterize the silicon nitride encapsulated annealed samples. It was found that enhanced activation can be obtained by Si+ and P+ dual implantations. The optimal condition for dual implantations is that the atomic distribution of implanted P overlaps that of implanted si with the same implant dose. For a dose of 5×l014 /cm2, the highest activation for dual implants is 70% while the activation for single implant is 40% after annealing at 750°C for 15 minutes. PL spectrum measurement was carried out at temperatures from 11K to 100K. A broad band at about 1.26eV was found in Si+ implanted samples, of which the intensity increased with increasing of the Si dose and decreased with increasing of the co-implant P+ dose. The temperature dependence of the broad band showed that it is a complex (Vp-Sip) related band. All these results indicate that silicon is an amphoteric species in InP.

Measurement of Copper in p-Type Silicon Using Charge-Carrier Lifetime Methods

2005 ◽  
Vol 108-109 ◽  
pp. 643-648 ◽  
Author(s):  
Marko Yli-Koski ◽  
Hele Savin ◽  
E. Saarnilehto ◽  
Antti Haarahiltunen ◽  
Juha Sinkkonen ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Room Temperature ◽  
Carrier Lifetime ◽  
Detection Sensitivity ◽  
Bulk Silicon ◽  
Recombination Activity ◽  
P Type ◽  
Copper Detection ◽  
Charge Carrier Lifetime

We compare SPV technique with µ−PCD for the determination of recombination activity of copper precipitates in p-Si. The copper precipitates were formed in bulk silicon through illumination at room temperature. We observed that the recombination activities of copper precipitates measured with SPV are higher than the ones measured with µ−PCD technique. However, it seems that the copper detection sensitivity is about the same with SPV and µ−PCD techniques.

Photoluminescence Characterization of SiGe/Si Quantum-Well Wire Structures

1995 ◽  
Vol 379 ◽  
Author(s):  
S. Nilsson ◽  
H. P. Zeindl ◽  
A. Wolff ◽  
K. Pressel
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Molecular Beam ◽  
Optical Quality ◽  
Photoluminescence Spectra ◽  
Single Quantum Well ◽  
Quantum Well Wire ◽  
Carbon Interstitial

ABSTRACTLow-temperature photoluminescence measurements were performed in order to probe the optical quality of SiGe/Si quantum-well wire structures fabricated by electron-beam lithography and subsequent reactive ion etching, having the patterned polymethylmethacrylate resist as an etch mask. In addition, one set of quantum-well wire structures was post-treated by means of annealing in a hydrogen environment. Our results show that even for the smallest wires of about 100nm in width, the wires exhibit phonon-resolved photoluminescence spectra, similar to that from the molecular beam eptitaxially grown SiGe single quantum well which was used as starting material for the patterning process. After the patterning process a new sharp peak appears in the photoluminescence spectra at 0.97eV in photon energy. Our investigation suggests that this feature is introduced by damage during the patterning process and most probably identical to the G-line, which previously was identified as originating from the dicarbon centre (substitutional carbon-interstitial carbon) in Si. This centre is known to be a very common endproduct of irradiating Si near room temperature which is the case at our patterning process.

Sign in / Sign up

Export Citation Format

Share Document