Measurement and Modeling of Intrinsic Stresses in CVD W Lines

1995 ◽  
Vol 391 ◽  
Author(s):  
Jin Lee ◽  
Qing Ma ◽  
Thomas Marieb ◽  
Anne S. Mack ◽  
Harry Fujimoto ◽  
...  
Keyword(s):  
Finite Element ◽  
Cross Sections ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Intrinsic Stress ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
Biaxial Tensile Stress ◽  
Stress States ◽  
Good Agreement

AbstractWe have studied stress states in chemical vapor deposited (CVD) tungsten (W) for both blanket films and lines, to understand better the mechanical implications of intrinsic stress for interconnection structures. Since W has a low mobility at its deposition temperature, a very large intrinsic stress develops during deposition. Intrinsic strains in blanket W films were measured with an X-ray technique. The measured strains correspond to a biaxial tensile stress of the order of 1 GPa. This result was used to provide an initial strain input in a finite element calculation to obtain intrinsic stress states in W lines. SEM observation of cross sections of the metal lines enabled us to determine the growth pattern of the W, and infer the boundary conditions during growth. Finite Element Method (FEM) calculations of the room temperature stress in the lines, including both intrinsic and thermal components, are in good agreement with X-ray determinations.

Analysis of Reinforced Concrete Culvert considering Concrete Creep and Shrinkage

1996 ◽  
Vol 1541 (1) ◽  
pp. 120-126
Author(s):  
Charles J. Oswald
Keyword(s):  
Finite Element ◽  
Reinforced Concrete ◽  
Cross Sections ◽  
Soil Structure ◽  
Silty Clay ◽  
Soil Pressure ◽  
Concrete Creep ◽  
Long Span ◽  
Creep And Shrinkage ◽  
Good Agreement

Measurements made on a long span reinforced concrete arch culvert under 7.3 m (24 ft) of silty clay backfill were compared with results from finite-element analyses of the soil-structure system using the CANDE finite-element code. The culvert strains and deflections and the soil pressure on the culvert were measured during construction and during the following 2.5 years at three instrumented cross sections. The CANDE program was modified to account for the effects of concrete creep and shrinkage strains after it was noted that the measured postconstruction culvert deflection and strains increased significantly whereas the measured soil pressure on the culvert remained relatively constant. Good agreement was generally obtained between measured and calculated values of the culvert strain and deflection and the soil pressure during the entire monitoring period after the code was modified.

Studies of the Coefficient of Thermal Expansion of Low-k ILD Materials by X-Ray Reflectivity

2006 ◽  
Vol 914 ◽  
Author(s):  
George Andrew Antonelli ◽  
Tran M. Phung ◽  
Clay D. Mortensen ◽  
David Johnson ◽  
Michael D. Goodner ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Coefficient Of Thermal Expansion ◽  
Chemical Vapor ◽  
Dielectric Materials ◽  
Free Standing ◽  
Dielectric Thin Films ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
Low K

AbstractThe electrical and mechanical properties of low-k dielectric materials have received a great deal of attention in recent years; however, measurements of thermal properties such as the coefficient of thermal expansion remain minimal. This absence of data is due in part to the limited number of experimental techniques capable of measuring this parameter. Even when data does exist, it has generally not been collected on samples of a thickness relevant to current and future integrated processes. We present a procedure for using x-ray reflectivity to measure the coefficient of thermal expansion of sub-micron dielectric thin films. In particular, we elucidate the thin film mechanics required to extract this parameter for a supported film as opposed to a free-standing film. Results of measurements for a series of plasma-enhanced chemical vapor deposited and spin-on low-k dielectric thin films will be provided and compared.

L X-ray fluorescence cross sections in the atomic region 59 ≤ Z ≤ 82 excited by 16.58 keV photons

1996 ◽  
Vol 74 (5-6) ◽  
pp. 230-235 ◽  
Author(s):  
D. V. Rao ◽  
R. Cesareo ◽  
G. E. Gigante
Keyword(s):  
Excitation Energy ◽  
Least Squares ◽  
Cross Sections ◽  
Experimental Results ◽  
X Ray ◽  
Experimental Cross ◽  
Average Fluorescence ◽  
Good Agreement

LL, Lα, Lβ, and Lγ X-ray fluorescence cross sections for Pr, Sm, Gd, Dy, Ho, Er, Yb, Pt Au, and Pb were measured at the excitation energy 16.58 keV. An X-ray tube and a secondary excitor system was used instead of radioisotopes for the measurements. Experimental cross sections are compared with the theoretical estimates based on relativistic Dirac–Hartree–Slater theory. Average L-shell fluorescence yields [Formula: see text] are deduced using the present experimental cross sections and the theoretical subshell photoionization cross sections. The derived average fluorescence yields are fitted by least squares to polynomials in Z of the form ΣnanZn and compared with theoretical and earlier fitted values. Good agreement is observed ' between the experimental results and the theoretical estimates based on relativistic Dirac–Hartree–Slater theory.

Ultraprecision Surface Grinding of Chemical Vapor Deposited Silicon Carbide for X-Ray Mirrors Using Resinoid-Bonded Diamond Wheels

CIRP Annals ◽  
1999 ◽  
Vol 48 (1) ◽  
pp. 277-280 ◽  
Author(s):  
Y. Namba ◽  
H. Kobayashi ◽  
H. Suzuki ◽  
K. Yamashita ◽  
N. Taniguchi
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor ◽  
Surface Grinding ◽  
X Ray ◽  
Chemical Vapor Deposited

Relative calibration of chemical vapor deposited diamond X-ray detector

2012 ◽  
Vol 24 (8) ◽  
pp. 1871-1873
Author(s):  
侯立飞 Hou Lifei ◽  
李志超 Li Zhichao ◽  
袁永腾 Yuan Yongteng ◽  
况龙钰 Kuang Longyu ◽  
杨国洪 Yang Guohong ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
X Ray ◽  
Chemical Vapor Deposited

Compamson in the Growth and Properties of rf Sputtered μc-Si:H and Glow Discharge-Chemical Vapor Deposited μc-Si:H Films

1993 ◽  
Vol 321 ◽  
Author(s):  
J. Y. Lin ◽  
B. H. Tseng ◽  
K. C. Hsu ◽  
H. L. Hwang
Keyword(s):  
Glow Discharge ◽  
Rf Sputtering ◽  
Chemical Vapor ◽  
Treatment Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Grain Sizes ◽  
Chemical Vapor Deposited ◽  
Ft Ir ◽  
Almost All

ABSTRACTProperties of μc-Si:H films grown by rf sputtering and by glow discharge-chemical vapor deposition (GD-CVD) using diluted-hydrogen and hydrogen-atom-treatment method were compared employing TEM, X-ray diffraction, Raman scattering and FT-IR. The films deposited by both methods all exhibited comparable grain sizes in the range of 10–18 nm. and showed the same tendency in almost all the Measurements.

scholarly journals Compositional Dependence of Structural Properties of Prepared Alloys and Films

2011 ◽  
Vol 2011 ◽  
pp. 1-6
Author(s):  
M. F. A. Alias ◽  
A. A. J. Al-Douri ◽  
E. M. N. Al-Fawadi ◽  
A. A. Alnajjar
Keyword(s):  
Room Temperature ◽  
Thermal Evaporation ◽  
High Accuracy ◽  
Compositional Dependence ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates ◽  
Different Temperatures ◽  
Good Agreement

Results of a study of alloys and films with various Pb content have been reported and discussed. Films of of thickness 1.5 μm have been deposited on glass substrates by flash thermal evaporation method at room temperature, under vacuum at constant deposition rate. These films were annealed under vacuum around 10−6Torr at different temperatures up to 523 K. The composition of the elements in alloys was determined by standard surfaces techniques such as atomic absorption spectroscopy (AAS) and X-ray fluorescence (XRF), and the results were found of high accuracy and in very good agreement with the theoretical values. The structure for alloys and films is determined by using X-ray diffraction. This measurement reveals that the structure is polycrystalline with cubic structure and there are strong peaks at the direction (200) and (111). The effect of heat treatment on the crystalline orientation, relative intensity, and grain size of films is presented.

scholarly journals Chemical-Vapor-Deposited Graphene as Charge Storage Layer in Flash Memory Device

2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
W. J. Liu ◽  
L. Chen ◽  
P. Zhou ◽  
Q. Q. Sun ◽  
H. L. Lu ◽  
...  
Keyword(s):  
Flash Memory ◽  
Room Temperature ◽  
Metal Layer ◽  
Chemical Vapor ◽  
Charge Trapping ◽  
Memory Device ◽  
Water Molecules ◽  
Oh Groups ◽  
Chemical Vapor Deposited ◽  
A Charge

We demonstrated a flash memory device with chemical-vapor-deposited graphene as a charge trapping layer. It was found that the average RMS roughness of block oxide on graphene storage layer can be significantly reduced from 5.9 nm to 0.5 nm by inserting a seed metal layer, which was verified by AFM measurements. The memory window is 5.6 V for a dual sweep of ±12 V at room temperature. Moreover, a reduced hysteresis at the low temperature was observed, indicative of water molecules or −OH groups between graphene and dielectric playing an important role in memory windows.

Effects of Seeding Over the Microstructure and Stresses of Diamond Thin Films

1999 ◽  
Vol 594 ◽  
Author(s):  
S. Gupta ◽  
G. Morell ◽  
R. S. Katiyar ◽  
D. R. Gilbert ◽  
R. K. Singh
Keyword(s):  
Electron Cyclotron Resonance ◽  
Raman Band ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Interfacial Stress ◽  
Intrinsic Stress ◽  
Seeding Density ◽  
X Ray Diffraction ◽  
Total Stress ◽  
X Ray

AbstractWe have studied diamond films grown by electron cyclotron resonance-assisted chemical vapor deposition (ECR-CVD) at low pressure (1.0 Torr) and temperatures (550–700 °C). These films were grown on seeded Si (111) substrates with different diamond seed densities (0.225, 1.5, 2.3, and 3.1 × 109 nuclei/cm2). Scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy (RS) were employed to investigate the crystalline quality, diamond yield, and stresses developed in the films as a function of seeding density. Thermal interfacial stress, interactions across grain boundaries, and internal stress were considered in order to account for the total stress observed from the Raman band. We present correlations among seed density, relative amount of non-sp3 phase, O/C ratio, and total intrinsic stress.

Sign in / Sign up

Export Citation Format

Share Document