A New Application of Rbs-Pixe with High Energy Microbeam

1986 ◽  
Vol 69 ◽  
Author(s):  
B. Raicu ◽  
H. Bakhru ◽  
S. Fesseha ◽  
W. M. Gibson

AbstractA beam of 2 MeV He+ ions with a diameter of 2 microns was used to perform Rutherford backscattering (RBS) and particle induced x-ray emission (PIXE) analysis on large residual defects formed by high dose arsenic (As) ion implantation and furnace annealing. Research results concerning contamination in implanted silicon wafers generated by primary beam sputtering, inadequate wafer transport system, and other technological factors are presented.

2014 ◽  
Vol 24 (03n04) ◽  
pp. 205-215
Author(s):  
M. Kavčič

While traditional proton induced X-ray emission (PIXE) analytical technique is based on the energy dispersive solid state detectors used to collect the X-ray fluorescence from the sample, wavelength dispersive X-ray (WDX) spectrometers are applied in high energy resolution PIXE (HR-PIXE) analysis. The main drawback of the WDX spectroscopy is the relatively low efficiency making it less applicable for trace element PIXE analysis. However, the efficiency was enhanced significantly in modern spectrometers employing cylindrically or even spherically curved crystals combined with position sensitive X-ray detectors. The energy resolution of such a spectrometer may exceed the resolution of the energy dispersive detector by two orders of magnitude while keeping the efficiency at a high enough level to perform trace element analysis. In this paper, the recent history and the development of HR-PIXE spectroscopy at the J. Stefan Institute in Ljubljana is presented. Our current setup based on in-vacuum Johansson-type crystal spectrometer is presented in more details followed by some most recent applications.


1993 ◽  
Vol 316 ◽  
Author(s):  
R.J. Matyi ◽  
D.L. Chapek ◽  
J.R. Conrad ◽  
S.B. Felch

ABSTRACTWe have used high resolution x-ray diffraction to analyze the structural changes that accompany boron doping of silicon by BF3 plasma source ion implantation (PSII). Triple crystal diffraction analysis of as-implanted PSII doped silicon showed little excess x-ray diffuse scattering, even when analyzed using the asymmetric (113) reflection for increased surface sensitivity. This result suggests that PSΠ is capable of providing high dose implantation with low damage. Annealing of the PSII-doped silicon showed the development of a compressive surface layer, indicated by enhanced x-ray scattering directed perpendicular to the surface. Virtually all of the scattering from the annealed samples was concentrated in the so-called “surface streak” which arises due to dynamical diffraction from the perfect crystal Si structure. Little if any diffuse scattering due to kinematic scattering from crystal defects was detected. These observations indicate that plasma source doping can be used to achieve both a shallow implant depth and an extremely uniform incorporation of boron into the silicon lattice.


1992 ◽  
Vol 262 ◽  
Author(s):  
Jos G.E. Klappe ◽  
István Bársony ◽  
Tom W. Ryan

ABSTRACTHigh-energy ion-implantation is one of the roost critical processing steps regarding the formation of defects in mono-crystalline silicon. High- as well as low-doses implanted at various energies can result in relatively high residual defect concentrations after post-implantation annealing.Before annealing, the crystal lattice strain is mainly caused by the point defects. After annealing, the accommodation of substitutional impurities is the main origin of the residual lattice strain. High-Resolution X-ray Diffraction (HRXD) has been frequently used for the characterization of these structures. Dislocation loops formed during the high temperature step, however, cause enhanced diffuse X-ray scattering, which can dominate the measured X-ray intensity in conventional HRXD.Triple axis diffractometry is used in this study to analyze the size, type and location of defects in a boron implanted and rapid thermally annealed silicon sample.


1993 ◽  
Vol 316 ◽  
Author(s):  
Zhang Tonghe ◽  
Wei Fuzhong ◽  
Chen Jun ◽  
Zhang huixing ◽  
Zhang Xioji ◽  
...  

ABSTRACTThe chemical change in the surface of H13 steel or aluminum is produced by implanting a reactive elements, such as Ti, Mo and W. The X-ray diffraction pattern shows that implanted Ti at 400 C has reacted with carbon(0.35 in wt.%) forming a second phase TiC. Auger analysis shows that the carbon atoms have been condensed in the Ti implanted region. Carbon peak concentration of 30 At.% is greater than Ti atom peak concentration of 12 At.%.Several second phases are formed during pulsed Mo ion implantation 2 into aluminum with high ion flux of 50˜80µA/cm2 which raises the target temperature from 400°C to 600°C.More second phases are formed by dual Mo+C implantation with high dose of 3˜5×10 17/cm2 and high flux of 50˜75µA/cm2 . And the target temperature is raised from 400 to 600°C. The FeMo Fe3Mo2, Fe2MoC, Mo2C, MoC, MoCx, phases and iron carbides are identified by X-ray diffraction technique.


2020 ◽  
Vol 20 (3) ◽  
pp. 280-288
Author(s):  
S. P. Glushko

Introduction. Obtaining high-quality thin metal films is important for advances in the technologies of applying antifriction and wear-resistant coatings on cutting tools or parts of friction couples. Various techniques of physical film deposition are applied using technologies of cathode (ion), magnetron and ion beam assisted sputtering. The work objective is to analyze, compare and determine the feasibility of techniques for the physical deposition of thin metal films when applying antifriction and wear-resistant coatings on cutting tools or parts of friction couples. Materials and Methods. Technologies of cathode (ionic), magnetron and ion-beam sputtering are considered. Schematic diagrams, conditions and parameters of the considered processes are presented. Results. An advanced technology for the deposition of thin films, alloying and hardening of the surfaces of metal parts is magnetron sputtering. Continuous wave (cw) magnetrons are used to apply coatings of complex composition or multilayer coatings on flat substrates. Ion beam sputtering is considered a slow sputtering of the target surface by bombardment with a high-energy ion beam and deposition on the substrate surface. Under the ion implantation, the surface of metals is doped with recoil atoms, which receive high energy from accelerated ions and move a few nanometers deeper. This enables to obtain ultra-thin doped layers. Low temperature of ion implantation, the possibility of sufficiently accurate control of the depth and the impurity distribution profile, create the prerequisites for the process automation. Wear tracks are more acidified under the same wear conditions on implanted steel compared to non-implanted steel. The nonequilibrium process under ion implantation causes the formation of such alloys in the surface layers that cannot be obtained under normal conditions due to diffusion of components or limited solubility. Ion implantation makes it possible to obtain alloys of a certain composition in the surface layer. Surface properties can be optimized without reference to the bulk properties of the material. Implantation is possible at low temperatures without a noticeable change in the size of the product.Discussion and Conclusion. Cathode (ion), magnetron and ion-beam sputtering have common advantages: due to the relatively low temperature, the substrate does not overheat; it is possible to obtain uniform coatings; the chemical composition of the deposited coatings is accurately reproduced. The rest of the advantages and disadvantages of the considered methods are individual. The results can be used to create thin films through alternating magnetron and then ionbeam deposition processes, which enables to obtain films uniformly modified in depth. This is important in the production of parts of friction couples and cutting tools to improve their quality.


1994 ◽  
Vol 354 ◽  
Author(s):  
M. Guemmaz ◽  
A. Mosser ◽  
D. Raiser ◽  
J.J. Grob ◽  
A. Cornet ◽  
...  

AbstractPolycrystalline titanium samples were implanted with N+ ions at high fluences and at several energies. The aim was to obtain 4000 Â thick nitrided layers of constant nominal concentration equal to 20% ,30%, and 40%.The results obtained by RBS showed a flat nitrogen distribution with depth and the measured concentrations were respectively 20%,31% and 38%.X-ray grazing incidence diffraction indicated that, at 20%, a nitrogen solid solution is formed in the a-Ti matrix. At 31% the nitrogen solid solution is present besides a 5-TiN phase and at 38% only the 5-TiN phase remains.From nanoindentation measurements, we derived the depth-related hardness and Young's modulus of the implanted samples. These values were compared to those found on titanium nitride layers obtained with other coating techniques.


2004 ◽  
Vol 829 ◽  
Author(s):  
V. A. Coleman ◽  
H. H. Tan ◽  
C. Jagadish ◽  
S. O. Kucheyev ◽  
M. R. Phillips ◽  
...  

ABSTRACTZinc oxide is a very attractive material for a range of optoelectronic devices including blue light-emitting diodes and laser diodes. Though n-type doping has been successfully achieved, p-type doing of ZnO is still a challenge that must be overcome before p-n junction devices can be realized. Ion implantation is widely used in the microelectronics industry for selective area doping and device isolation. Understanding damage accumulation and recrystallization processes is important for achieving selective area doping. In this study, As (potential p-type dopant) ion implantation and annealing studies were carried out. ZnO samples were implanted with high dose (1.4 × 1017 ions/cm2) 300 keV As ions at room temperature. Furnace annealing of samples in the range of 900°C to 1200°C was employed to achieve recrystallization of amorphous layers and electrical activation of the dopant. Rutherford backscattering/channeling spectrometry, transmission electron microscopy and cathodolumiescence spectroscopy were used to monitor damage accumulation and annihilation behavior in ZnO. Results of this study have significant implications for p-type doing of ZnO by ion implantation.


2015 ◽  
Vol 1096 ◽  
pp. 503-508
Author(s):  
Qian Li ◽  
Tian Ze Li ◽  
Xiang Peng Chen

In the analysis of semiconductor position sensitive detector (PSD) based on the traditional structure, using dual ion implantation method to studying the new type of PSD structure. The new structure of the n-type silicon substrate by implanting a high dose, low energy boron ions and another high energy boron ion, Which subsequent annealing of 2h at 1050 °C in an ambient of dry O2to form a shallow and a low doped p-n junction. Experimental results show that the new structure of PSD can obtained high position resolution, smaller errors and nonlinear response time.


1991 ◽  
Vol 235 ◽  
Author(s):  
M. K. El-Ghor ◽  
K. A. Joyner ◽  
H. H. Hosack

ABSTRACTWe have investigated the effect of the presence of oxide particles on the surface of silicon wafers during high energy, high dose implantation of oxygen into silicon. It was found that for single implants with doses of 1.5 × 1018/cm2 or 1.8 × 1018/cm2, such particles produce a non-continuous buried oxide layer in the as-implanted condition as well as after annealing. Etching results showed that no defects, which formed etchable paths through the buried oxide, were produced for particles with diameters 0.43 um or below for the lower dose and 0.53 um for the higher dose.


Sign in / Sign up

Export Citation Format

Share Document