scholarly journals Tuning Green to Red Color in Erbium Niobate Micro- and Nanoparticles

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 660
Author(s):  
Susana Devesa ◽  
Joana Rodrigues ◽  
Sílvia Soreto Teixeira ◽  
Aidan P. Rooney ◽  
Manuel P. F. Graça ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Optical Properties ◽  
Room Temperature ◽  
Sol Gel ◽  
High Energy ◽  
Site Symmetry ◽  
Photoluminescence Spectra ◽  
Heat Treated ◽  
Red Color ◽  
Optical Activation

Tetragonal Er0.5Nb0.5O2 and monoclinic ErNbO4 micro- and nanoparticles were prepared by the citrate sol–gel method and heat-treated at temperatures between 700 and 1600 °C. ErNbO4 revealed a spherical-shaped crystallite, whose size increased with heat treatment temperatures. To assess their optical properties at room temperature (RT), a thorough spectroscopic study was conducted. RT photoluminescence (PL) spectroscopy revealed that Er3+ optical activation was achieved in all samples. The photoluminescence spectra show the green/yellow 2H11/2, 4S3/2→4I15/2 and red 4F9/2→4I15/2 intraionic transitions as the main visible recombination, with the number of the crystal field splitting Er3+ multiplets reflecting the ion site symmetry in the crystalline phases. PL excitation allows the identification of Er3+ high-energy excited multiplets as the preferential population paths of the emitting levels. Independently of the crystalline structure, the intensity ratio between the green/yellow and red intraionic transitions was found to be strongly sensitive to the excitation energy. After pumping the samples with a resonant excitation into the 4G11/2 excited multiplet, a green/yellow transition stronger than the red one was observed, whereas the reverse occurred for higher excitation photon energies. Thus, a controllable selective excited tunable green to red color was achieved, which endows new opportunities for photonic and optoelectronic applications.

Optical Properties of ATO Sol-gel Coated Carbon Fibers

2012 ◽  
Vol 1454 ◽  
pp. 221-226
Author(s):  
Brandon Richard ◽  
Norma Alcantar ◽  
Andrew Hoff ◽  
Sylvia Thomas
Keyword(s):  
Heat Treatment ◽  
Optical Properties ◽  
Carbon Fibers ◽  
Sol Gel ◽  
Functional Materials ◽  
Additional Material ◽  
Heat Treated ◽  
Ft Ir ◽  
Recent Trends ◽  
Thermal Infrared Radiation

ABSTRACTRecent trends in composite research include the development of structural materials with multiple functionalities. In new studies, novel materials are being designed, developed, modified, and implemented into composite designs. Typically, an increase in functionality requires additional material phases within one system. The presence of excessive phases can result in deterioration of individual or overall properties. True multi-functional materials must maintain all properties at or above the minimum operating limit. In this project, samples of Sb-doped SnO2(ATO) sol-gel solutions are used to coat carbon fibers and are heat treated at a temperature range of 200 – 500 °C. Results from this research are used to model the implementation of sol-gel coatings into carbon fiber reinforced multifunctional composite systems. This research presents a novel thermo-responsive sol-gel/ (dopant) combination and evaluation of the actuating responses due to various heat treatment temperatures. While ATO is a well-known transparent conductive material, the implementation of ATO on carbon fibers for infrared thermal reflectivity has not been examined. These coatings serve as actuators capable of reflecting thermal infrared radiation in mid-range and near-range wavelengths (λ). By altering the ATO sol gel thickness and heat treatment temperatures, optimal optical properties are obtained. While scanning electron microscopy (SEM) is used for imaging, electron diffraction spectroscopy (EDS) is used to verify the compounds present in the coatings. Fourier transform infrared (FT-IR) spectroscopy was performed to analyze the reflectivity in the infrared spectra and analyze the crystal structures after heat treatments.

scholarly journals Влияние термообработки на электрические характеристики полуизолирующих слоев, полученных с помощью облучения n-SiC высокоэнергетическими ионами аргона

2018 ◽  
Vol 44 (6) ◽  
pp. 11 ◽  
Author(s):  
П.А. Иванов ◽  
А.С. Потапов ◽  
М.Ф. Кудояров ◽  
М.А. Козловский ◽  
Т.П. Самсонова
Keyword(s):  
Heat Treatment ◽  
Silicon Carbide ◽  
Room Temperature ◽  
High Energy ◽  
Room Temperature Resistivity ◽  
Electrical Characteristics ◽  
Near Surface ◽  
Heat Treated ◽  
Argon Ions ◽  
Temperature Resistivity

AbstractIrradiation of crystalline n -type silicon carbide ( n -SiC) with high-energy (53-MeV) argon ions was used to create near-surface semi-insulating ( i -SiC) layers. The influence of subsequent heat treatment on the electrical characteristics of i -SiC layers has been studied. The most high-ohmic ion-irradiated i -SiC layers with room-temperature resistivity of no less than 1.6 × 10^13 Ω cm were obtained upon the heat treatment at 600°C, whereas the resistivity of such layers heat-treated at 230°C was about 5 × 10^7 Ω cm.

Electrical and Optical Properties of Si+ and P+ Implanted InP:Fe

1990 ◽  
Vol 201 ◽  
Author(s):  
Honglie Shen ◽  
Genqing Yang ◽  
Zuyao Zhou ◽  
Guanqun Xia ◽  
Shichang Zou
Keyword(s):  
Optical Properties ◽  
Silicon Nitride ◽  
Temperature Dependence ◽  
Optimal Condition ◽  
Room Temperature ◽  
Broad Band ◽  
Photoluminescence Spectra ◽  
Electrical And Optical Properties ◽  
Spectrum Measurement ◽  
Single Implant

AbstractDual implantations of Si+ and P+ into InP:Fe were performed both at 200°C and room temperature. Si+ ions were implanted by 150keV with doses ranging from 5×1013 /cm2 to 1×1015 /cm2, while P+ ions were implanted by 110keV. 160keV and 180keV with doses ranging from 1×l013 /cm2 to 1×1015 /cm2. Hall measurements and photoluminescence spectra were used to characterize the silicon nitride encapsulated annealed samples. It was found that enhanced activation can be obtained by Si+ and P+ dual implantations. The optimal condition for dual implantations is that the atomic distribution of implanted P overlaps that of implanted si with the same implant dose. For a dose of 5×l014 /cm2, the highest activation for dual implants is 70% while the activation for single implant is 40% after annealing at 750°C for 15 minutes. PL spectrum measurement was carried out at temperatures from 11K to 100K. A broad band at about 1.26eV was found in Si+ implanted samples, of which the intensity increased with increasing of the Si dose and decreased with increasing of the co-implant P+ dose. The temperature dependence of the broad band showed that it is a complex (Vp-Sip) related band. All these results indicate that silicon is an amphoteric species in InP.

Effects of Heat-Treatment Temperature on the Properties of Negative CTE Eucryptite Ceramics

2010 ◽  
Vol 105-106 ◽  
pp. 123-125 ◽  
Author(s):  
Yong Li ◽  
Qi Hong Wei ◽  
Ling Li ◽  
Chong Hai Wang ◽  
Xiao Li Zhang ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Thermal Expansion ◽  
Thermal Expansion Coefficient ◽  
Expansion Coefficient ◽  
Heat Treatment Temperature ◽  
Bending Strength ◽  
Sol Gel ◽  
Negative Thermal Expansion ◽  
Treatment Temperature ◽  
Heat Treated

In this paper, negative thermal expansion coefficient eucryptite powders were prepared by sol-gel method using silica-sol as starting material. The raw blocks were obtained by dry pressing process after the powder was synthesized, and then the raw blocks were heat-treated at 600º, 1150º, 1280º, 1380º, 1420º and 1450°C, respectively. Variations of density, porosity and thermal expansion coefficient at different heat treatment temperatures were investigated. Phase transformation and fracture surface morphology of eucryptite heat-treated at different temperatures, respectively, were observed by XRD and SEM. The results indicate that, with the increasing heat- treatment temperature, the grain size and the bending strength increased, porosity decreased, thermal expansion coefficient decreased continuously. Negative thermal expansion coefficient of -5.3162×10-6~-7.4413×10-6 (0~800°C) was obtained. But when the heat-treatment temperature was more than 1420°C, porosity began to increase, bending strength began to decrease, which were the symbols of over-burning, while the main crystal phase didn’t change.

Copper-alumina materials made by infiltration in boehmite

1995 ◽  
Vol 10 (9) ◽  
pp. 2271-2276 ◽  
Author(s):  
V. Pierre ◽  
D. Pierre ◽  
A.C. Pierre
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Phase Transformation ◽  
Sandwich Structures ◽  
Sol Gel ◽  
Copper Acetate ◽  
New Materials ◽  
Heat Treated ◽  
Direct Infiltration

New materials were made by infiltration of sol-gel boehmite thin films with copper acetate. The structure and phase transformation of these materials during heat treatment were studied. It was found that infiltration in the boehmite state did not end up in the same material as direct infiltration in the θ-alumina derived from boehmite, even after both types of materials were heat-treated at 900 °C. Infiltration in boehmite makes it possible to synthesize sandwich structures comprised of alternate layers of CuO and of γ-alumina.

scholarly journals Zn Doped α-Fe2O3: An Efficient Material for UV Driven Photocatalysis and Electrical Conductivity

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 273 ◽  
Author(s):  
Suman ◽  
Surjeet Chahal ◽  
Ashok Kumar ◽  
Parmod Kumar
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Uv Light ◽  
Sol Gel ◽  
High Energy ◽  
Lattice Parameter ◽  
Dielectric Behavior ◽  
Energy Storage Devices ◽  
Vis Spectroscopy ◽  
Potential Applications

Zinc (Zn) doped hematite (α-Fe2O3) nanoparticles with varying concentrations (pure, 2%, 4% and 6%) were synthesized via sol-gel method. The influence of divalent Zn ions on structural, optical and dielectric behavior of hematite were studied. X-ray diffraction (XRD) pattern of synthesized samples were indexed to rhombohedral R3c space group of hematite with 14–21 nm crystallite size. The lattice parameter (a and c) values increase upto Zn 4% and decrease afterwards. The surface morphology of prepared nanoparticles were explored using transmission electron microscopy (TEM). The band gap measured from Tauc’s plot, using UV-Vis spectroscopy, showed reduction in its values upto Zn 4% and the reverse trend was obtained in higher concentrations. The dielectric properties of pure and Zn doped hematite were investigated at room temperature and followed the same trends as that of XRD parameters and band gap. Photocatalytic properties of nanoparticles were performed for hazardous Rose bengal dye and showed effective degradation in the presence of UV light. Hence, Zn2+ doped hematite can be considered as an efficient material for the potential applications in the domain of photocatalysis and also higher value of dielectric constant at room temperature makes them applicable in high energy storage devices.

scholarly journals Optical properties of CuSe thin films - band gap determination

2017 ◽  
Vol 49 (2) ◽  
pp. 167-174 ◽  
Author(s):  
Milica Petrovic ◽  
Martina Gilic ◽  
Jovana Cirkovic ◽  
Maja Romcevic ◽  
Nebojsa Romcevic ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Band Gap ◽  
Room Temperature ◽  
Nir Spectroscopy ◽  
Copper Selenide ◽  
Photoluminescence Spectra ◽  
Indirect Transition ◽  
Direct Transition ◽  
Scanning Electron

Copper selenide thin films of three different thicknesses have been prepared by vacuum evaporation method on a glass substrate at room temperature. The optical properties of the films were investigated by UV-VIS-NIR spectroscopy and photoluminescence spectroscopy. Surface morphology was investigated by field-emission scanning electron microscopy. Copper selenide exhibits both direct and indirect transitions. The band gap for direct transition is found to be ~2.7 eV and that for indirect transition it is ~1.70 eV. Photoluminescence spectra of copper selenide thin films have also been analyzed, which show emission peaks at 530, 550, and 760 nm. The latter corresponds to indirect transition in investigated material.

Indium-Sensitized UV Photocatalysts Made from Alkali Titanate Microfibers

2009 ◽  
Vol 620-622 ◽  
pp. 651-654
Author(s):  
Leticia M. Torres-Martínez ◽  
Cecilia Sánchez-Trinidad ◽  
Vicente Rodríguez-González ◽  
Ricardo Gómez
Keyword(s):  
Heat Treatment ◽  
Annealing Time ◽  
Uv Light ◽  
Sol Gel ◽  
Dichlorophenoxyacetic Acid ◽  
Sem Images ◽  
Uv Light Irradiation ◽  
Heat Treated ◽  
Munk Function ◽  
Sol Gel Process

Indium-alkali microfibers doped ceramic were prepared by the sol-gel process. The gels preparation samples, were heat treated at 700°C for different length of time. The products were characterized by means of XRD, SEM-EDS and UV–Vis-DRS. The XRD showed the formation of the Na2Ti6O13 phase whose crystallinity depends on the annealing time. The band gap calculated from the UV–Vis Kubelka-Munk function shows very similar values (3.53-3.55 eV). The SEM images of the indium-alkali titanates show microfiber clumps morphologies of about 5 µm, and the EDS spectra show that In2O3 is on the Na2Ti6O13 surface. The results of the evaluation of the In-Na2Ti6O13 semiconductors in the 2, 4-dichlorophenoxyacetic acid (2, 4-D) photodecomposition under UV light irradiation, show that the photoactivity depends on the time of heat treatment of the samples.

Phase Transformations in Sol-Gel PZT Thin Films

2000 ◽  
Vol 623 ◽  
Author(s):  
D.P. Eakin ◽  
M.G. Norton ◽  
D.F. Bahr
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Room Temperature ◽  
Structural Changes ◽  
Sol Gel ◽  
Ex Situ ◽  
Ambient Conditions ◽  
Crystalline Films ◽  
In Situ Heating

AbstractThin films of PZT were deposited onto platinized and bare single crystal NaCl using spin coating and sol-gel precursors. These films were then analyzed using in situ heating in a transmission electron microscope. The results of in situ heating are compared with those of an ex situ heat treatment in a standard furnace, mimicking the heat treatment given to entire wafers of these materials for use in MEMS and ferroelectric applications. Films are shown to transform from amorphous to nanocrystalline over the course of days when held at room temperature. While chemical variations are found between films crystallized in ambient conditions and films crystallized in the vacuum conditions of the microscope, the resulting crystal structures appear to be insensitive to these differences. Significant changes in crystal structure are found at 500°C, primarily the change from largely amorphous to the beginnings of clearly crystalline films. Crystallization does occur over the course of weeks at room temperature in these films. Structural changes are more modest in these films when heated in the TEM then those observed on actual wafers. The presence of Pt significantly influences both the resulting structure and morphology in both in situ and ex situ heated films. Without Pt present, the films appear to form small, 10 nm grains consisting of both cubic and tetragonal phases, whereas in the case of the Pt larger, 100 nm grains of a tetragonal phase are formed.

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