Theoretical Study of InAsSb/InTlSB Superlattice for the Far Infrared Detector

AbstractWe propose a novel superlattice (SL) InAsySb1−y)/InxTl1−xSb lattice matched to InSb for a potential application as an infrared detector material in the 8–12 μm wavelength range. We report on the results of energy band calculations for this SL using the modified Kronig-Penney model. Our preliminary calculations indicate that InAs0.07Sb0.93/In0.93Tl0.07Sb would exhibit a type-I SL with conduction band offset of 34 meV and valence band offset of 53 meV at 0K. Due to the lack of accurate information on material parameters, namely, energy offsets and effective masses of InTlSb, these were estimated by comparison with the behavior of HgCdTe system. The theory predicts three heavy hole subbands and one partially confined electron in the 30Å InAs0.07Sb0.93/100Å In0.93Tl0.07Sb SL. The band gap of the SL was computed to be 0.127 eV (9.7 μm). It is expected that this SL will allow improvements in the InTlSb epilayers’ structural quality as it will be sandwiched between higher quality zincblende InAsSb layers.

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Theory of Interfaces in Wide-Gap Nitrides

MRS Proceedings ◽

10.1557/proc-449-893 ◽

1996 ◽

Vol 449 ◽

Cited By ~ 3

Author(s):

M. Buongiorno Nardelli ◽

K. Rapcewicz ◽

E. L. Briggs ◽

C. Bungaro ◽

J. Bernholc

Keyword(s):

Laser Diodes ◽

Blue Laser ◽

Band Offset ◽

Type I ◽

Interface Properties ◽

Type Ii ◽

Valence Band Offset ◽

Bulk Properties ◽

Conduction Band Offset ◽

Zinc Blende

ABSTRACTThe results of theoretical studies of the bulk and interface properties of nitrides are presented. As a test the bulk properties, including phonons of GaN at the Γ-point, are calculated and found to be in excellent agreement with the experimental data. At interfaces, the strain effects on the band offsets range from 20% to 40%, depending on the substrate. The AlN/GaN/InN interfaces are all of type I, while the Al0.5Ga0.5N on A1N zinc-blende (001) interface is of type II. Further, an interface similar to those used in the recent blue laser diodes is of type I and does not have any electronically active interface states. The valence band-offset in the (0001) GaN on A1N interface is -0.57 eV and the conduction band-offset is 1.87 eV.

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CONSTRUCTION OF SnO2/SiO2/Si HETEROJUNCTION AND ITS LINEUP USING I–V AND C–V MEASUREMENTS

International Journal of Modern Physics B ◽

10.1142/s0217979211102022 ◽

2011 ◽

Vol 25 (29) ◽

pp. 3863-3869 ◽

Cited By ~ 25

Author(s):

EVAN T. SALEM ◽

IBRAHIM R. AGOOL ◽

MARWA A. HASSAN

Keyword(s):

Experimental Data ◽

Thermal Evaporation ◽

Energy Band Diagram ◽

Metal Films ◽

Band Offset ◽

Band Diagram ◽

Thermal Evaporation Technique ◽

Valence Band Offset ◽

Conduction Band Offset ◽

Evaporation Technique

Near-ideal n- SnO 2/n- Si heterojunction band edge lineup has been investigated with aid of I–V and C–V measurements. The heterojunction was manufactured by rapid thermal oxidation of Sn metal films prepared by thermal evaporation technique on monocrystalline n-type silicon. The experimental data of the conduction band offset ΔEc and valence band offset ΔEc were compared with theoretical values. The band offset ΔEc = 0.55 eV and ΔEv = 1.8 eV obtained at 300 K. The energy band diagram of n- SnO 2/n- Si HJ was constructed. C–V measurements depict that the junction was an abrupt type and the built-in voltage was determined from 1/C2–V plot.

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Exciton binding energies and the valence-band offset in mixed type-I–type-II strained-layer superlattices

Physical Review B ◽

10.1103/physrevb.46.1557 ◽

1992 ◽

Vol 46 (3) ◽

pp. 1557-1563 ◽

Cited By ~ 61

Author(s):

P. Peyla ◽

Y. Merle d’Aubigné ◽

A. Wasiela ◽

R. Romestain ◽

H. Mariette ◽

...

Keyword(s):

Valence Band ◽

Mixed Type ◽

Binding Energies ◽

Band Offset ◽

Type I ◽

Type Ii ◽

Valence Band Offset ◽

Strained Layer ◽

Strained Layer Superlattices

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CONSTRUCTION OF ANISOTYPE CdS/Si HETEROJUNCTION AND LINEUP USING I–V AND C–V MEASUREMENTS

Modern Physics Letters B ◽

10.1142/s0217984906012158 ◽

2006 ◽

Vol 20 (28) ◽

pp. 1833-1838 ◽

Cited By ~ 1

Author(s):

RAID A. ISMAIL ◽

ABDUL-MAJEED E. AL-SAMARAI ◽

OMAR A. ABDULRAZAQ

Keyword(s):

Spray Pyrolysis Technique ◽

Energy Band Diagram ◽

Chemical Spray Pyrolysis ◽

Band Offset ◽

Band Diagram ◽

Valence Band Offset ◽

Conduction Band Offset ◽

Chemical Spray Pyrolysis Technique ◽

Chemical Spray ◽

First Time

Near-ideal p-CdS/n-Si heterojunction (HJ) band edge lineup has been investigated for the first time with the aid of I–V and C–V measurements. The heterojunction was obtained by the deposition of CdS films prepared by chemical spray pyrolysis technique (CSP), on the monocrystalline n-type silicon. The experimental data of the conduction band offset, ΔEc and the valence band offset, ΔEc were compared with theoretical values. The band offsets ΔEc=530 meV and ΔEv=770 meV were obtained at 300 K. The energy band diagram of p-CdS/n-Si HJ was constructed. The C–V measurements depicted that the junction was an abrupt type and the built-in voltage was determined from the C-2–V plot.

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Optical Investigation of the Band Offset of CdxZn1−xTe /ZnTe and ZnSexTe1−x/ZnTe Superlattices

MRS Proceedings ◽

10.1557/proc-198-427 ◽

1990 ◽

Vol 198 ◽

Author(s):

Y. Rajakarunanayake ◽

M. C. Phillips ◽

J. O. Mccaldin ◽

D. H. Chow ◽

D. A. Collins ◽

...

Keyword(s):

Valence Band ◽

Band Alignment ◽

Band Offset ◽

Type I ◽

Optical Investigation ◽

Type Ii ◽

Carrier Injection ◽

Valence Band Offset ◽

Small Component ◽

Strained Layer Superlattices

ABSTRACTWe have analyzed photoluminescence spectra from CdxZnl−xTe /ZnTe and ZnSexTel−x/ZnTe strained layer superlattices grown by MBE, and obtained the band offsets by fitting to theory. We find that the valence band offset of the CdTe/ZnTe system is quite small (-50± 160 meV). In CdxZnl−xTe /ZnTe superlattices, the electrons and heavy holes are confined in the CdxZn1−xTe layers (type I), while the light holes are confined in the ZnTe layers (type II). On the other hand, the photoluminescence data from the ZnSexTe1−x /ZnTe superlattices suggest that the band alignment is type II, with a large valence band offset (−907 ± 120 meV). We also investigated the band bowing in the ZnSexTel−x alloys by optical spectroscopy, and found that there is only a small component of bowing in the valence band, while most of the bowing occurs in the conduction band. Based on our results for band alignments, we evaluate the prospects for minority carrier injection in wide bandgap heterostructures based on ZnSe, ZnTe, and CdTe.

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The effects of strain and composition on the conduction-band offset of direct band gap type-I GeSn/GeSnSi quantum dots for CMOS compatible mid-IR light source

Semiconductor Science and Technology ◽

10.1088/1361-6641/ab5d89 ◽

2019 ◽

Vol 35 (2) ◽

pp. 025008 ◽

Cited By ~ 2

Author(s):

Qimiao Chen ◽

Lin Zhang ◽

Hao Zhou ◽

Wei Li ◽

Bong Kwon Son ◽

...

Keyword(s):

Quantum Dots ◽

Band Gap ◽

Conduction Band ◽

Band Offset ◽

Type I ◽

Direct Band Gap ◽

Conduction Band Offset ◽

Direct Band ◽

Cmos Compatible ◽

Ir Light

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Energy Band Offsets at a Ga2O3(Gd2O3)-GaAs Interface

MRS Proceedings ◽

10.1557/proc-573-131 ◽

1999 ◽

Vol 573 ◽

Cited By ~ 5

Author(s):

T. S. Lay ◽

M. Hong ◽

J. Kwo ◽

J. P. Mannaerts ◽

W. H. Hung ◽

...

Keyword(s):

Energy Band ◽

Oxide Semiconductor ◽

Band Offset ◽

Spectroscopy Analysis ◽

Valence Band Offset ◽

Electron Effective Mass ◽

Band Offsets ◽

Conduction Band Offset ◽

Current Voltage ◽

Current Voltage Characteristics

ABSTRACTWe report the energy band offsets at a Ga2O3(Gd2O3)-GaAs interface. The valence-band offset (ΔEv) is ∼ 2.6 eV, measured by soft x-ray photoemission spectroscopy. Analysis of the current-voltage characteristics of a Pt-Ga2O3(Gd2O3)-GaAs MOS (metal-oxide-semiconductor) structure, which are dominated by Fowler-Nordheim tunneling, reveals a conduction-band offset (ΔEC) ∼ 1.4 eV at the Ga2O3(Gd2O3)-GaAs interface and an electron effective mass (m*) ∼ 0.29 me of the Ga2O3(Gd2O3) film.

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Far-infrared determination of effective mass and valence-band offset in the HgTe/CdTe superlattice

Physical Review B ◽

10.1103/physrevb.40.5613 ◽

1989 ◽

Vol 40 (8) ◽

pp. 5613-5616 ◽

Cited By ~ 12

Author(s):

S. Perkowitz ◽

B. Lou ◽

L. S. Kim ◽

O. K. Wu ◽

J. N. Schulman

Keyword(s):

Effective Mass ◽

Valence Band ◽

Far Infrared ◽

Band Offset ◽

Valence Band Offset

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Electron and Hole Confinement in GaInN/GaN and AlGaN/GaN Quantum Wells

MRS Proceedings ◽

10.1557/proc-693-i7.2.1 ◽

2001 ◽

Vol 693 ◽

Author(s):

A. Hangleiter ◽

S. Lahmann ◽

C. Netzel ◽

U. Rossow ◽

P. R. C. Kent ◽

...

Keyword(s):

Quantum Wells ◽

Valence Band ◽

Conduction Band ◽

Band Offset ◽

Valence Band Edge ◽

Valence Band Offset ◽

Time Resolved ◽

Conduction Band Offset ◽

Hole Confinement ◽

Weak Electron

AbstractWe show that the strong bowing of the bandgap of GaInN, which is primarily due to bowing of the valence band edge, translates into a strongly composition dependent ratio of the conduction band offset to the valence band offset with respect to GaN. For common In mole fractions of 0-20 % this leads to a reversal of the band offset ratio and to very weak electron con nement. This theoretical picture is veri ed by comparing results of time-resolved spectroscopy on asymmetric AlGaN/GaInN/GaN and AlGaN/GaN/AlGaN quantum wells. Since electron con nement is much stronger for GaN/AlGaN wells than for GaInN/GaN wells, the effect of asymmetry is very weak for the former and fairly strong for the latter.

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Admittance of a-Si:H/c-Si Schottky Diodes

MRS Proceedings ◽

10.1557/proc-420-245 ◽

1996 ◽

Vol 420 ◽

Cited By ~ 1

Author(s):

S. Gall ◽

R. Hirschauer ◽

M. Kolter ◽

D. Bräunig

Keyword(s):

Equivalent Circuit ◽

Valence Band ◽

Schottky Diode ◽

Schottky Diodes ◽

Band Offset ◽

Valence Band Offset ◽

Conduction Band Offset ◽

Absorption Of Light ◽

Spectral Behaviour ◽

Frequency Temperature

AbstractWe have measured the admittance (conductance and capacitance) of a-Si:H/c-Si heterostructure Schottky diodes as a function of frequency, temperature and voltage in the dark and under spectral illumination (in the wavelength range between λ=500nm and λ=1200nm). Thus, it is possible to observe the activation/deactivation of trapping-detrapping effects within the a-Si:H layer (near the a-Si:H/c-Si interface). We have determined the conduction band offset of the a-Si:H/c-Si heterostructure. The spectral behaviour of the admittance is dominated by the absorption of light in the c-Si and the valence band offset of the heterojunction. We have also developed an equivalent circuit of the a-Si:H/c-Si heterostructure Schottky diode in the dark, which is capable of describing the measured behaviour.

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