scholarly journals P-And N-Type Implantation Doping Of GaN With Ca And O

1996 ◽  
Vol 423 ◽  
Author(s):  
J. C. Zolper ◽  
R. G. Wilson ◽  
S. J. Pearton ◽  
R. A. Stall
Keyword(s):  
Ion Implantation ◽  
Variable Temperature ◽  
Electronic Devices ◽  
Shallow Donor ◽  
Photonic Devices ◽  
Saturation Current ◽  
Shallow Acceptor ◽  
Projected Range ◽  
Effect Transistor ◽  
P Type

AbstractIII-N photonic devices have made great advances in recent years following the demonstration of doping of GaN p-type with Mg and n-type with Si. However, the deep ionization energy level of Mg in GaN (∼160 meV) limits the ionized of acceptors at room temperature to less than 1.0% of the substitutional Mg. With this in mind, we used ion implantation to characterize the ionization level of Ca in GaN since Ca had been suggested by Strite [1] to be a shallow acceptor in GaN. Ca-implanted GaN converted from n-to-p type after a 1100°C activation anneal. Variable temperature Hall measurements give an ionization level at 169 meV. Although this level is equivalent to that of Mg, Ca-implantation may have advantages (shallower projected range and less straggle for a given energy) than Mg for electronic devices. In particular, we report the first GaN device using ion implantation doping. This is a GaN junction field effect transistor (JFET) which employed Ca-implantation. A 1.7 µm JFET had a transconductance of 7 mS/mm, a saturation current at 0 V gate bias of 33 mA/mm, a ft of 2.7 GHz, and a fmax of 9.4 GHz. 0-implantation was also studied and shown to create a shallow donor level (∼25 meV) that is similar to Si. SIMS profiles of as-implanted and annealed samples showed no measurable redistribution of either Ca or0inGaNat 1125°C.

Shallow and Deep Level Defects in GaN

1995 ◽  
Vol 395 ◽  
Author(s):  
W. Götz ◽  
N.M. Johnson ◽  
D.P. Bour ◽  
C. Chen ◽  
H. Liu ◽  
...  
Keyword(s):  
Deep Level ◽  
Variable Temperature ◽  
Shallow Donor ◽  
Deep Levels ◽  
Electron Photoemission ◽  
Hall Effect Measurements ◽  
Transient Spectroscopy ◽  
P Type ◽  
Capacitance Transient ◽  
Threshold Energies

ABSTRACTShallow and deep electronic defects in MOCVD-grown GaN were characterized by variable temperature Hall effect measurements, deep level transient spectroscopy (DLTS) and photoemission capacitance transient spectroscopy (O-DLTS). Unintentionally and Si-doped, n-type and Mg-doped, p-type GaN films were studied. Si introduces a shallow donor level into the band gap of GaN at ∼Ec - 0.02 eV and was found to be the dominant donor impurity in our unintentionally doped material. Mg is the shallowest acceptor in GaN identified to date with an electronic level at ∼Ev + 0.2 eV. With DLTS deep levels were detected in n-type and p-type GaN and with O-DLTS we demonstrate several deep levels with optical threshold energies for electron photoemission in the range between 0.87 and 1.59 eV in n-type GaN.

Ion Implantation For High Performance Ill-V Jfets And Hfets

1996 ◽  
Vol 421 ◽  
Author(s):  
J. C. Zolper ◽  
A. G. Baca ◽  
M. E. Sherwin ◽  
J. F. Klem
Keyword(s):  
Ion Implantation ◽  
Conduction Band ◽  
Density Of States ◽  
High Performance ◽  
Electronic Devices ◽  
Semiconductor Materials ◽  
Comprehensive Treatment ◽  
Enabling Technology ◽  
Deep Donor ◽  
P Type

AbstractIon implantation has been an enabling technology for the realization of many high performance electronic devices in III-V semiconductor materials. We report on advances in ion implantation processing technology for application to GaAs JFETs, AlGaAs/GaAs HFETs, and InGaP or InA1P-barrier HFETs. In particular, the GaAs JFET has required the development of shallow p-type implants using Zn or Cd with junction depths down to 35 nm after the activation anneal. Implant activation and ionization issues for AlGaAs will be reported along with those for InGaP and InAlP. A comprehensive treatment of Si-implant doping of AlGaAs is given based on the donor ionization energies and conduction band density-of-states dependence on Al-composition. Si and Si+P implants in InGaP are shown to achieve higher electron concentrations than for similar implants in AlGaAs due to the absence of the deep donor (DX) level. An optimized P co-implantation scheme in InGaP is shown to increase the implanted donor saturation level by 65%.

scholarly journals Ion Implantation and Annealing Studies in III–V Nitrides

1996 ◽  
Vol 449 ◽  
Author(s):  
J. C. Zolper ◽  
S. J. Pearton ◽  
J. S. Williams ◽  
H. H. Tan ◽  
R. J. Karlicek ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Ohmic Contacts ◽  
Electrical Characterization ◽  
Surface Region ◽  
Full Potential ◽  
Barrier Formation ◽  
Effect Transistor ◽  
Initial Implantation ◽  
P Type

ABSTRACTIon implantation doping and isolation is expected to play an enabling role for the realization of advanced Ill-Nitride based devices. In fact, implantation has already been used to demonstrate n- and p-type doping of GaN with Si and Mg or Ca, respectively, as well as to fabricate the first GaN junction field effect transistor.1-4 Although these initial implantation studies demonstrated the feasibility of this technique for the Ill-Nitride materials, further work is needed to realize its full potential.After reviewing some of the initial studies in this field, we present new results for improved annealing sequences and defect studies in GaN. First, sputtered A1N is shown by electrical characterization of Schottky and Ohmic contacts to be an effective encapsulant of GaN during the 1100 °C implant activation anneal. The A1N suppresses N-loss from the GaN surface and the formation of a degenerate n+-surface region that would prohibit Schottky barrier formation after the implant activation anneal. Second, we examine the nature of the defect generation and annealing sequence following implantation using both Rutherford Backscattering (RBS) and Hall characterization. We show that for a Si-dose of l × l016 cm-2 50% electrical donor activation is achieved despite a significant amount of residual implantation-induced damage in the material.

Electrical Properties of GaN/Si Grown by MOCVD

2002 ◽  
Vol 743 ◽  
Author(s):  
Seikoh Yoshida ◽  
Jiang Li ◽  
Takahiro Wada ◽  
Hironari Takehara
Keyword(s):  
High Temperature ◽  
Low Cost ◽  
Electronic Devices ◽  
Si Substrate ◽  
Transmission Electron ◽  
Effect Transistor ◽  
P Type ◽  
High Temperature Operation ◽  
Gan Film ◽  
Algan Buffer

ABSTRACTGaN growth on Si substrate is very attractive for realizing low cost electronic devices. We grew a thin GaN film on p-type Si(111) substrate using AlGaN high temperature buffer without using a conventional low temperature buffer. A homogeneous buffer layer was obtained at 1093 K and a homogenous 500 nm thick GaN layer was also obtained without any crack. Using a transmission electron microscopy (TEM), we observed that the cross-section of GaN and AlGaN buffer was very smooth and also the surface of GaN was flat although the threading dislocations were observed. Furthermore, we directly fabricated a metal semiconductor field effect transistor (MESFET) using a 500 nm-thick GaN/Si without any high resistive GaN layer. A Schottky electrode was Pt/Au and an ohmic electrode was Al/Ti/Au. A Schottky breakdown voltage was over 100 V. Also, we confirmed a high temperature operation of the MESFET using a thin GaN film on Si substrate at 573 K.

Switching the electrical characteristics of TiO2 from n-type to p-type by ion implantation

2021 ◽  
pp. 150274
Author(s):  
Adriano Panepinto ◽  
Arnaud Krumpmann ◽  
David Cornil ◽  
Jérôme Cornil ◽  
Rony Snyders
Keyword(s):  
Ion Implantation ◽  
Electrical Characteristics ◽  
P Type

scholarly journals Evidence for oxygen being a dominant shallow acceptor in p-type CuI

APL Materials ◽  
2021 ◽  
Vol 9 (5) ◽  
pp. 051101
Author(s):  
P. Storm ◽  
S. Gierth ◽  
S. Selle ◽  
M. S. Bar ◽  
H. von Wenckstern ◽  
...  
Keyword(s):  
Shallow Acceptor ◽  
P Type

scholarly journals Stable Cu2O Photoelectrodes by Reactive Ion Beam Sputter Deposition

2018 ◽  
Vol 2018 ◽  
pp. 1-7
Author(s):  
Ching-Hsiu Chen ◽  
Assamen Ayalew Ejigu ◽  
Liang-Chiun Chao
Keyword(s):  
Electrode Materials ◽  
Variable Temperature ◽  
Ion Beam ◽  
Sputter Deposition ◽  
Flow Rates ◽  
Vacancy Defects ◽  
Photoluminescence Study ◽  
P Type ◽  
Quartz Substrates ◽  
Ion Beam Sputter Deposition

Cu2O has been deposited on quartz substrates by reactive ion beam sputter deposition. Experimental results show that by controlling argon/oxygen flow rates, both n-type and p-type Cu2O samples can be achieved. The bandgap of n-type and p-type Cu2O were found to be 2.3 and 2.5 eV, respectively. The variable temperature photoluminescence study shows that the n-type conductivity is due to the presence of oxygen vacancy defects. Both samples show stable photocurrent response that photocurrent change of both samples after 1,000 seconds of operation is less than 5%. Carrier densities were found to be 1.90 × 1018 and 2.24 × 1016 cm−3 for n-type and p-type Cu2O, respectively. Fermi energies have been calculated, and simplified band structures are constructed. Our results show that Cu2O is a plausible candidate for both photoanodic and photocathodic electrode materials in photoelectrochemical application.

VIB-5 submicrometer-gate self-aligned GaAs FET with p-type barrier layer fabricated by ion implantation

1984 ◽  
Vol 31 (12) ◽  
pp. 1987-1987 ◽  
Author(s):  
K. Matsumoto ◽  
N. Hashizume ◽  
N. Atoda
Keyword(s):  
Ion Implantation ◽  
Barrier Layer ◽  
P Type

Deep Level Related Yellow Luminescence in P-Type GaN Grown by MBE on (0001) Sapphire

1999 ◽  
Vol 595 ◽  
Author(s):  
Giancarlo Salviati ◽  
Nicola Armani ◽  
Carlo Zanotti-Fregonara ◽  
Enos Gombia ◽  
Martin Albrecht ◽  
...  
Keyword(s):  
Volume Fraction ◽  
Deep Level ◽  
Cubic Phase ◽  
Donor Level ◽  
Yellow Luminescence ◽  
Wurtzite Phase ◽  
Shallow Acceptor ◽  
Deep Donor ◽  
P Type ◽  
Deep Donor Level

AbstractYellow luminescence (YL) has been studied in GaN:Mg doped with Mg concentrations ranging from 1019 to 1021 cm−3 by spectral CL (T=5K) and TEM and explained by suggesting that a different mechanism could be responsible for the YL in p-type GaN with respect to that acting in n-type GaN.Transitions at 2.2, 2.8, 3.27, 3.21, and 3.44 eV were found. In addition to the wurtzite phase, TEM showed a different amount of the cubic phase in the samples. Nano tubes with a density of 3×109 cm−2 were also observed by approaching the layer/substrate interface. Besides this, coherent inclusions were found with a diameter in the nm range and a volume fraction of about 1%.The 2.8 eV transition was correlated to a deep level at 600 meV below the conduction band (CB) due to MgGa-VN complexes. The 3.27 eV emission was ascribed to a shallow acceptor at about 170-190 meV above the valence band (VB) due to MgGa.The 2.2 eV yellow band, not present in low doped samples, increased by increasing the Mg concentration. It was ascribed to a transition between a deep donor level at 0.8-1.1 eV below the CB edge due to NGa and the shallow acceptor due to MgGa. This assumption was checked by studying the role of C in Mg compensation. CL spectra from a sample with high C content showed transitions between a C-related 200 meV shallow donor and a deep donor level at about 0.9- 1.1 eV below the CB due to a NGa-VN complex. In our hypothesis this should induce a decrease of the integrated intensity in both the 2.2 and 2.8 eV bands, as actually shown by CL investigations.

Sign in / Sign up

Export Citation Format

Share Document