Electrical Properties of GaN/Si Grown by MOCVD

2002 ◽  
Vol 743 ◽  
Author(s):  
Seikoh Yoshida ◽  
Jiang Li ◽  
Takahiro Wada ◽  
Hironari Takehara
Keyword(s):  
High Temperature ◽  
Low Cost ◽  
Electronic Devices ◽  
Si Substrate ◽  
Transmission Electron ◽  
Effect Transistor ◽  
P Type ◽  
High Temperature Operation ◽  
Gan Film ◽  
Algan Buffer

ABSTRACTGaN growth on Si substrate is very attractive for realizing low cost electronic devices. We grew a thin GaN film on p-type Si(111) substrate using AlGaN high temperature buffer without using a conventional low temperature buffer. A homogeneous buffer layer was obtained at 1093 K and a homogenous 500 nm thick GaN layer was also obtained without any crack. Using a transmission electron microscopy (TEM), we observed that the cross-section of GaN and AlGaN buffer was very smooth and also the surface of GaN was flat although the threading dislocations were observed. Furthermore, we directly fabricated a metal semiconductor field effect transistor (MESFET) using a 500 nm-thick GaN/Si without any high resistive GaN layer. A Schottky electrode was Pt/Au and an ohmic electrode was Al/Ti/Au. A Schottky breakdown voltage was over 100 V. Also, we confirmed a high temperature operation of the MESFET using a thin GaN film on Si substrate at 573 K.

High-temperature operation of an AlGaN/GaN HFET on a Si substrate using a thin GaN film

2003 ◽  
Vol 0 (7) ◽  
pp. 2343-2346 ◽  
Author(s):  
S. Yoshida ◽  
J. Li ◽  
T. Wada ◽  
H. Takehara
Keyword(s):  
High Temperature ◽  
Si Substrate ◽  
Gan Hfet ◽  
High Temperature Operation ◽  
Gan Film

scholarly journals Low cost, p-ZnO/n-Si, rectifying, nano heterojunction diode: Fabrication and electrical characterization

2014 ◽  
Vol 5 ◽  
pp. 2216-2221 ◽  
Author(s):  
Vinay Kabra ◽  
Lubna Aamir ◽  
M M Malik
Keyword(s):  
Zno Nanoparticles ◽  
Low Cost ◽  
Electrical Characterization ◽  
Hall Effect Measurement ◽  
Dip Coating ◽  
Si Substrate ◽  
Electronic Circuitry ◽  
Uv Illumination ◽  
P Type ◽  
Dip Coating Technique

A low cost, highly rectifying, nano heterojunction (p-ZnO/n-Si) diode was fabricated using solution-processed, p-type, ZnO nanoparticles and an n-type Si substrate. p-type ZnO nanoparticles were synthesized using a chemical synthesis route and characterized by XRD and a Hall effect measurement system. The device was fabricated by forming thin film of synthesized p-ZnO nanoparticles on an n-Si substrate using a dip coating technique. The device was then characterized by current–voltage (I–V) and capacitance–voltage (C–V) measurements. The effect of UV illumination on the I–V characteristics was also explored and indicated the formation of a highly rectifying, nano heterojunction with a rectification ratio of 101 at 3 V, which increased nearly 2.5 times (232 at 3 V) under UV illumination. However, the cut-in voltage decreases from 1.5 V to 0.9 V under UV illumination. The fabricated device could be used in switches, rectifiers, clipper and clamper circuits, BJTs, MOSFETs and other electronic circuitry.

High Breakdown Voltage GaN Power HEMT on Si Substrate

2013 ◽  
Vol 805-806 ◽  
pp. 948-953
Author(s):  
Cen Kong ◽  
Jian Jun Zhou ◽  
Jin Yu Ni ◽  
Yue Chan Kong ◽  
Tang Sheng Chen
Keyword(s):  
Breakdown Voltage ◽  
Low Cost ◽  
Electronic Devices ◽  
Power Electronic ◽  
Si Substrate ◽  
Field Plate ◽  
Maximum Current Density ◽  
Gan Hemt ◽  
Maximum Current ◽  
State Resistance

GaN high electronic mobility transistor (HEMT) was fabricated on silicon substrate. A breakdown voltage of 800V was obtained without using field plate technology. The fabrication processes were compatible with the conventional GaN HEMTs fabrication processes. The length between drain and gate (Lgd) has a greater impact on breakdown voltage of the device. A breakdown voltage of 800V with maximum current density of 536 mA/mm was obtained while Lgd was 15μm and the Wg was 100μm. The specific on-state resistance of this devices was 1.75 mΩ·cm2, which was 85 times lower than that of silicon MOSFET with same breakdown voltage. The results establish the foundation of low cost GaN HEMT power electronic devices.

Structure of the Si-GaAs Interface: Polar on Nonpolar Epitaxy

1985 ◽  
Vol 43 ◽  
pp. 366-367
Author(s):  
J.H. Mazur ◽  
J. Washburn ◽  
T. Henderson ◽  
J. Klem ◽  
W.T. Masselink ◽  
...  
Keyword(s):  
Cross Sections ◽  
Low Cost ◽  
Electronic Devices ◽  
Compound Semiconductors ◽  
View Point ◽  
Si Substrate ◽  
Antiphase Boundaries ◽  
Cross Sectional ◽  
Mbe Growth ◽  
Si Substrates

Possibility of growth of epitaxial lll-V (GaAs, InP, GaP, etc.) compound semiconductors on nonpolar substrates (Ge,Si) is of considerable interest from the view point of monolithic integration of lll-V optoelectronic and Si electronic devices. The growth of GaAs and AIGaAs layers on Si substrates is additionally attractive because of good mechanical strength and low cost of Si substrates. However, a principal difficulty in growing polar semiconductors on nonpolar substrates is that there are no preferential bonding sites for cations and anions in the first layer of growth, which can result in antiphase boundaries (APB’s) in addition to defects due to misfit (∼4% for GaAs on Si).In this work GaAs layers were grown on (100) Si substrates using procedures described elsewhere. The MBE growth started from a first deposition of As as a prelayer on the Si substrate followed by GaAs growth at 580°C. Cross-sectional TEM specimens were prepared using the same procedures as reported earlier for the case of Si-SiO2 cross-sections.

High-transconductance silicon carbide nanowire-based field-effect transistor (SiC-NWFET) for high-temperature applications

2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Habeeb Mousa ◽  
Kasif Teker
Keyword(s):  
High Temperature ◽  
High Temperatures ◽  
Field Effect Transistor ◽  
High Electron ◽  
Si Substrate ◽  
Content Type ◽  
Nitrogen Doped ◽  
Sic Nanowires ◽  
Effect Transistor ◽  
High Transconductance

Purpose The purpose of this study is to present a systematic investigation of the effect of high temperatures on transport characteristics of nitrogen-doped silicon carbide nanowire-based field-effect transistor (SiC-NWFET). The 3C-SiC nanowires can endure high-temperature environments due to their wide bandgap, high thermal conductivity and outstanding physical and chemical properties. Design/methodology/approach The metal-organic chemical vapor deposition process was used to synthesize in-situ nitrogen-doped SiC nanowires on SiO2/Si substrate. To fabricate the proposed SiC-NWFET device, the dielectrophoresis method was used to integrate the grown nanowires on the surface of pre-patterned electrodes onto the SiO2 layer on a highly doped Si substrate. The transport properties of the fabricated device were evaluated at various temperatures ranging from 25°C to 350°C. Findings The SiC-NWFET device demonstrated an increase in conductance (from 0.43 mS to 1.2 mS) after applying a temperature of 150°C, and then a decrease in conductance (from 1.2 mS to 0.3 mS) with increasing the temperature to 350°C. The increase in conductance can be attributed to the thermionic emission and tunneling mechanisms, while the decrease can be attributed to the phonon scattering. Additionally, the device revealed high electron and hole mobilities, as well as very low resistivity values at both room temperature and high temperatures. Originality/value High-temperature transport properties (above 300°C) of 3C-SiC nanowires have not been reported yet. The SiC-NWFET demonstrates a high transconductance, high electron and hole mobilities, very low resistivity, as well as good stability at high temperatures. Therefore, this study could offer solutions not only for high-power but also for low-power circuit and sensing applications in high-temperature environments (∼350°C).

Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETs

2012 ◽  
Vol 711 ◽  
pp. 134-138 ◽  
Author(s):  
Ana Maria Beltran ◽  
Sylvie Schamm-Chardon ◽  
Vincent Mortet ◽  
Mathieu Lefebvre ◽  
Elena Bedel-Pereira ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Electronic Devices ◽  
Chemical Properties ◽  
Electrical Characterization ◽  
Power Electronic ◽  
Layer Formation ◽  
Transmission Electron ◽  
P Type ◽  
And Chemical Properties

4H-SiC presents great advantages for its use in power electronic devices working at particular conditions. However the development of MOSFETs based on this material is limited by mobility degradation. N-channel SiC MOSFETs were manufactured on p-type epitaxial and p-implanted substrates and the electron mobility in the inversion channels was measured to be correlated with their structural and chemical properties determined by transmission electron microscopy methods. With regard to what was previously discussed in the literature, transition layer formation and carbon distribution across the SiC-SiO2interface are considered in relation with the measured low electron mobility of the MOSFETS.

Size Tunable near Infrared High-Quality PbS Quantum Dots

2014 ◽  
Vol 490-491 ◽  
pp. 319-323 ◽  
Author(s):  
M.N. Kalasad ◽  
M.K. Rabinal ◽  
B.G. Mulimani ◽  
N.C. Greenham
Keyword(s):  
Quantum Dots ◽  
Present Method ◽  
Near Infrared ◽  
Low Cost ◽  
Electronic Devices ◽  
High Quality ◽  
Band Emission ◽  
Transmission Electron ◽  
Pbs Quantum Dots ◽  
Time Of Reaction

Herein, we report the synthesis of PbS Quantum Dots (QDs) with oleic acid as surfactant molecules by non coordinating solvent route. The particles are having better size tunability by varying temperature and time of reaction. These quantum dots are characterized by optical absorption, photoluminescence and transmission electron microscopy. The resulting colloids are highly stable, extremely small size, spherical in shape, monodisperse and strong band emission. The estimated particles sizes are in the range of 2 to 6 nm. The present method of synthesis of PbS quantum dots can be used to fabricate low cost electronic devices.

Construction of High-Quality P-Type ZnSe Nanowires/n-Type Si Heterojunctions and their Nano-Optoelectronic Applications

2012 ◽  
Vol 569 ◽  
pp. 31-34
Author(s):  
Min Lu ◽  
Xing Zhi Zhao ◽  
Xiang An Wang ◽  
Yong Bin Ren ◽  
Li Wang
Keyword(s):  
Fill Factor ◽  
Low Cost ◽  
Fast Response ◽  
Si Substrate ◽  
High Power Conversion Efficiency ◽  
High Quality ◽  
Znse Nanowires ◽  
P Type ◽  
Photovoltaic Characteristics ◽  
Excellent Stability

We report a simple and low-cost method for constructing high-quality p-type ZnSe nanowires/n-type Si heterojunction by growing p-type ZnSe:N nanowires on n-type Si substrate. The heterojunction shows excellent stability and reproducibility to white light irradiation with a fast response time (103). And the photovoltaic characteristics of it exhibit a fill factor of about 24% and a high power conversion efficiency of 0.89%.

A performance comparison of normally-off and normally-on SiC JFETs toward use in high-temperature power modules

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000098-000103
Author(s):  
R. Schrader ◽  
K. Speer ◽  
J. Casady ◽  
V. Bondarenko ◽  
D. Sheridan
Keyword(s):  
High Temperature ◽  
Performance Comparison ◽  
Design Factor ◽  
Fundamental Limitations ◽  
Power Modules ◽  
Extreme High Temperature ◽  
Effect Transistor ◽  
High Temperature Operation ◽  
State Resistance ◽  
Important Design

The high-temperature static and dynamic characteristics of the new 1200 V, 45 mΩ, 9 mm2 depletion-mode SiC vertical trench junction field-effect transistor (vtJFET) are compared with those of a 1200 V, 50 mΩ, 9 mm2 enhancement-mode SiC vtJFET. It is shown that both devices are fully capable of high-temperature operation and that each type has its own unique advantages. For applications operating in extreme high-temperature environments, the larger saturation current (~2.5x) and lower on-state resistance (~150 mΩ at 250 °C) of the depletion-mode SiC vtJFET provide very attractive performance at temperatures beyond silicon's fundamental limitations. In addition, operating the normally-on vtJFET at VGS less than 2 V reduces the gate drive's current requirements to a negligible level, which is an important design factor for high-temperature power modules that use multiple die in parallel.

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