Interaction between Vapor Species and Graphite Crucible during the Growth of SiC by PVT

Graphite crucible in seeded sublimation growth of Silicon Carbide (SiC) single crystal does not only act as a container but also as an additional carbon source. The modeling of the growth process integrated with the etching phenomenon caused by the interaction between vapor species and the graphite crucible is shown to be able to predict the shape of the crystal front during the growth. The additional fluxes produced at the graphite part are delivered to the growing crystal mainly at the crystal periphery. The results obtained from the modeling are in good agreement with the experimental ones.

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Growth and Characterization of 2″ 6H-Silicon Carbide

MRS Proceedings ◽

10.1557/proc-572-271 ◽

1999 ◽

Vol 572 ◽

Cited By ~ 3

Author(s):

Erwin Schmitt ◽

Robert Eckstein ◽

Martin Kölbl ◽

Amd-Dietrich Weber

Keyword(s):

Silicon Carbide ◽

Boundary Conditions ◽

Growth Process ◽

Defect Density ◽

Crystal Quality ◽

Process Conditions ◽

Thermal Boundary Conditions ◽

Sublimation Growth ◽

Defect Densities

ABSTRACTFor the growth of 2″ 6H-SiC a sublimation growth process was developed. By different means of characterization crystal quality was evaluated. Higher defect densities, mainly in the periphery of the crystals were found to be correlated to unfavourable process conditions. Improvement of thermal boundary conditions lead to a decreased defect density and better homogeneity over the wafer area.

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Analysis of the Sublimation Growth Process of Silicon Carbide Bulk Crystals

MRS Proceedings ◽

10.1557/proc-423-215 ◽

1996 ◽

Vol 423 ◽

Cited By ~ 11

Author(s):

R. Eckstein ◽

D. Hofmann ◽

Y. Makarov ◽

St. G. Müller ◽

G. Pensl ◽

...

Keyword(s):

Mass Transfer ◽

Silicon Carbide ◽

Optical Properties ◽

Growth Process ◽

Numerical Models ◽

Chemical Processes ◽

Bulk Crystals ◽

Electrical And Optical Properties ◽

Bulk Growth ◽

Sublimation Growth

AbstractExperimental and numerical analysis have been performed on the sublimation growth process of SiC bulk crystals. Crystallographic, electrical and optical properties of the grown silicon carbide (SIC) crystals have been evaluated by various characterization techniques. Numerical models for the global simulation of SiC bulk growth including heat and mass transfer and chemical processes are applied and experimentally verified.

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Morphological and Optical Stability in Growth of Fluorescent SiC on Low Off-Axis Substrates

Materials Science Forum ◽

10.4028/www.scientific.net/msf.740-742.19 ◽

2013 ◽

Vol 740-742 ◽

pp. 19-22 ◽

Cited By ~ 1

Author(s):

Valdas Jokubavicius ◽

Michl Kaiser ◽

Philip Hens ◽

Peter J. Wellmann ◽

Rickard Liljedahl ◽

...

Keyword(s):

Silicon Carbide ◽

Vapor Phase ◽

Growth Process ◽

Room Temperature ◽

Tantalum Foil ◽

Photoluminescence Intensity ◽

Room Temperature Photoluminescence ◽

Optical Stability ◽

Morphological Instabilities ◽

Sublimation Growth

Fluorescent silicon carbide was grown using the fast sublimation growth process on low off-axis 6H-SiC substrates. In this case, the morphology of the epilayer and the incorporation of dopants are influenced by the Si/C ratio. Differently converted tantalum foils were introduced into the growth cell in order to change vapor phase stochiometry during the growth. Fluorescent SiC grown using fresh and fully converted tantalum foils contained morphological instabilities leading to lower room temperature photoluminescence intensity while an improved morphology and optical stability was achieved with partly converted tantalum foil. This work reflects the importance of considering the use of Ta foil in sublimation epitaxy regarding the morphological and optical stability in fluorescent silicon carbide.

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Modeling of the Mass Transport during Homo-Epitaxial Growth of Silicon Carbide by Fast Sublimation Epitaxy

Materials Science Forum ◽

10.4028/www.scientific.net/msf.740-742.52 ◽

2013 ◽

Vol 740-742 ◽

pp. 52-55 ◽

Cited By ~ 4

Author(s):

Thomas Hupfer ◽

Philip Hens ◽

Michl Kaiser ◽

Valdas Jokubavicius ◽

Mikael Syväjärvi ◽

...

Keyword(s):

Silicon Carbide ◽

Theoretical Model ◽

Mass Transport ◽

Epitaxial Growth ◽

Growth Process ◽

Mean Free Path ◽

Inert Gas ◽

Diffusive Growth ◽

The Mean ◽

Sublimation Growth

Ballistic and diffusive growth regimes in the Fast Sublimation Growth Process of silicon carbide can be determined using suggested theoretical model for the mean free path calculations. The influences of temperature and inert gas pressure on the mass transport for the growth of epitaxial layers were analyzed theoretically and experimentally.

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A Thermal Transport and Non-Equilibrium Deposition Model in AlN Sublimation Growth Process

Heat Transfer: Volume 3 ◽

10.1115/ht2005-72257 ◽

2005 ◽

Author(s):

Bei Wu ◽

Hui Zhang

Keyword(s):

Diffusion Model ◽

Growth Process ◽

Surface Reaction ◽

Operating Conditions ◽

Vapor Transport ◽

Vapor Species ◽

Growth System ◽

The One ◽

Sublimation Growth ◽

Non Equilibrium

Sublimation vapor transport method is a widely used technique for production of bulk crystals, such as SiC and AlN. A one-step reaction with two vapor species, i.e. aluminum (Al) vapor and nitrogen (N2) gas, is usually assumed for AlN sublimation growth with diffusion-controlled growth mechanism. However, vapor species generation/consumption is determined by surface reactions, which do not depend on the concentration gradient, but on concentration itself. Thus, the flux at the interfaces is controlled not only by the Fick’s law, but by the surface reaction. In this paper, inductively heated AlN sublimation growth process is simulated to predict the heat generation and temperature field in the growth system. The effects of coil position on heat and mass transfer are investigated. A non-equilibrium growth model considering surface reaction on the source/seed surfaces, diffusion within the boundary layers and vapor transport between source and seed is developed to predict the growth rates at different operating conditions. The predicted results are compared with the experimental data and the results from a traditional diffusion model, which assumes thermodynamic equilibrium on the solid/vapor surface/interface and vapor diffusion through bulk gas. The conditions under which the new model will provide the same as the one obtained by the diffusion model are identified.

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Laser drilling of single crystal silicon carbide substrates

International Congress on Applications of Lasers & Electro-Optics ◽

10.2351/1.5060892 ◽

2006 ◽

Author(s):

Chong Zhang ◽

Nathaniel R. Quick ◽

Aravinda Kar

Keyword(s):

Silicon Carbide ◽

Single Crystal ◽

Single Crystal Silicon ◽

Laser Drilling ◽

Crystal Silicon

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3D mathematical model system for melt hydrodynamics in the silicon single crystal FZ-growth process with rotating magnetic field

Magnetohydrodynamics ◽

10.22364/mhd.41.2.4 ◽

2005 ◽

Vol 41 (2) ◽

pp. 147-158 ◽

Cited By ~ 2

Keyword(s):

Magnetic Field ◽

Mathematical Model ◽

Single Crystal ◽

Growth Process ◽

Model System ◽

Silicon Single Crystal ◽

Rotating Magnetic Field

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Measurement of growth rates for single crystals and pressed tablets of CuSO4.5 H2O on a rotating disc

Collection of Czechoslovak Chemical Communications ◽

10.1135/cccc19892951 ◽

1989 ◽

Vol 54 (11) ◽

pp. 2951-2961 ◽

Cited By ~ 2

Author(s):

Miloslav Karel ◽

Jaroslav Nývlt

Keyword(s):

Growth Rate ◽

Single Crystal ◽

Single Crystals ◽

Growth Rates ◽

Diffusion Coefficients ◽

Preferred Orientation ◽

Rotating Disc ◽

Dissolution Rates ◽

Rates Of Growth ◽

Good Agreement

Measured growth and dissolution rates of single crystals and tablets were used to calculate the overall linear rates of growth and dissolution of CuSO4.5 H2O crystals. The growth rate for the tablet is by 20% higher than that calculated for the single crystal. It has been concluded that this difference is due to a preferred orientation of crystal faces on the tablet surface. Calculated diffusion coefficients and thicknesses of the diffusion and hydrodynamic layers in the vicinity of the growing or dissolving crystal are in good agreement with published values.

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Novel Abrasive-Impregnated Pads and Diamond Plates for the Grinding and Lapping of Single-Crystal Silicon Carbide Wafers

Applied Sciences ◽

10.3390/app11041783 ◽

2021 ◽

Vol 11 (4) ◽

pp. 1783

Author(s):

Ming-Yi Tsai ◽

Kun-Ying Li ◽

Sun-Yu Ji

Keyword(s):

Silicon Carbide ◽

Wear Rate ◽

Single Crystal ◽

Traditional Method ◽

Removal Rate ◽

Chemical Mechanical Planarization ◽

Single Crystal Silicon ◽

Crystal Silicon ◽

Diamond Grit ◽

Ceramic Binder

In this study, special ceramic grinding plates impregnated with diamond grit and other abrasives, as well as self-made lapping plates, were used to prepare the surface of single-crystal silicon carbide (SiC) wafers. This novel approach enhanced the process and reduced the final chemical mechanical planarization (CMP) polishing time. Two different grinding plates with pads impregnated with mixed abrasives were prepared: one with self-modified diamond + SiC and a ceramic binder and one with self-modified diamond + SiO2 + Al2O3 + SiC and a ceramic binder. The surface properties and removal rate of the SiC substrate were investigated and a comparison with the traditional method was conducted. The experimental results showed that the material removal rate (MRR) was higher for the SiC substrate with the mixed abrasive lapping plate than for the traditional method. The grinding wear rate could be reduced by 31.6%. The surface roughness of the samples polished using the diamond-impregnated lapping plate was markedly better than that of the samples polished using the copper plate. However, while the surface finish was better and the grinding efficiency was high, the wear rate of the mixed abrasive-impregnated polishing plates was high. This was a clear indication that this novel method was effective and could be used for SiC grinding and lapping.

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