Pulsed Laser Deposition of Barium Zirconate Thin Films for Neutral Imaging Applications

1996 ◽  
Vol 441 ◽  
Author(s):  
R. Leuchtner ◽  
R. Yanochko ◽  
J. Krzanowski ◽  
W. Brock ◽  
J. Quinn
Keyword(s):  
Pulsed Laser Deposition ◽  
Ambient Pressure ◽  
Pulsed Laser ◽  
Single Layer ◽  
Laser Deposition ◽  
Degree Of Crystallinity ◽  
Great Promise ◽  
Barium Zirconate ◽  
Space Applications ◽  
Force Microscopy

AbstractLow work function surfaces offer great promise as thermionic converters and neutral conversion surfaces due to the relative ease with which electrons may be removed. BaZrO3 surfaces were prepared using pulsed laser deposition (PLD) and their materials properties evaluated for potential use as a neutral conversion surface for space applications. Single layer films were fabricated at temperatures ranging from 110°C to 600°C, and as a function of background ambient pressure. The degree of crystallinity of the resulting films was measured using x-ray diffraction (XRD) and the surface morphology evaluated with atomic force microscopy (AFM). The film quality was found to be directly related to substrate temperature: an increase in grain size from ˜ 10 nm to >50 nm and improved crystal orientation with respect to the substrate were observed as the deposition temperature was increased from 110°C to 600°C.

scholarly journals Effect of Zinc (Zn) -Doped on the Structural, Optical and Electrical Properties of (Cdo)1-Xznx Films Prepared by Pulsed Laser Deposition Technique

2021 ◽  
Vol 19 (51) ◽  
pp. 64-71
Author(s):  
Haidar khudair Abbas ◽  
Kadhim A. Aadim ◽  
Ali H. Khidhir
Keyword(s):  
Pulsed Laser Deposition ◽  
Energy Gap ◽  
Cadmium Oxide ◽  
Pulsed Laser ◽  
Hexagonal Structure ◽  
Laser Deposition ◽  
Degree Of Crystallinity ◽  
Deposition Technique ◽  
Force Microscopy ◽  
Atomic Force

Pure cadmium oxide films (CdO) and doped with zinc were prepared at different atomic ratios using a pulsed laser deposition technique using an ND-YAG laser from the targets of the pressed powder capsules. X-ray diffraction measurements showed a cubic-shaped of CdO structure. Another phase appeared, especially in high percentages of zinc, corresponding to the hexagonal structure of zinc. The degree of crystallinity, as well as the crystal size, increased with the increase of the zinc ratio for the used targets. The atomic force microscopy measurements showed that increasing the dopant percentage leads to an increase in the size of the nanoparticles, the particle size distribution was irregular and wide, in addition, to increase the surface roughness of the nanoparticles. An increase in the zinc ratio also led to a decrease in the energy gap. While the Hall effect measuring showed an increase in the concentration of charge carriers and a decrease in their mobility with increasing the doping ratio.

Effect of Annealing on Structural and Optical Properties of Pulsed Laser Deposited Titanium Dioxide Thin Films

2009 ◽  
Vol 67 ◽  
pp. 65-70 ◽  
Author(s):  
Gaurav Shukla ◽  
Alika K. Khare
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Annealing Temperature ◽  
Ambient Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Tio2 Thin Films ◽  
Post Annealing ◽  
Post Annealing Temperature

TiO2 is a widely studied material for many important applications in areas such as environmental purification, photocatalyst, gas sensors, cancer therapy and high effect solar cell. However, investigations demonstrated that the properties and applications of titanium oxide films depend upon the nature of the crystalline phases present in the films, i.e. anatase and rutile phases. We report on the pulsed laser deposition of high quality TiO2 thin films. Pulsed Laser deposition of TiO2 thin films were performed in different ambient viz. oxygen, argon and vacuum, using a second harmonic of Nd:YAG laser of 6 ns pulse width. These deposited films of TiO2 were further annealed for 5hrs in air at different temperatures. TiO2 thin films were characterized using x-ray diffraction, SEM, photoluminescence, transmittance and reflectance. We observed effect of annealing over structural, morphological and optical properties of TiO2 thin films. The anatase phase of as-deposited TiO2 thin films is found to change into rutile phase with increased annealing temperature. Increase in crystalline behaviour of thin films with post-annealing temperature is also observed. Surface morphology of TiO2 thin films is dependent upon ambient pressure and post- annealing temperature. TiO2 thin films are found to be optically transparent with very low reflectivity hence will be suitable for antireflection coating applications.

Pulsed Laser Deposition of Superconductor/Ferromagnetic YBa2Cu3Oy/SrTiO3/La2/3Sr1/3MnO3 Heterostructures

1999 ◽  
Vol 574 ◽  
Author(s):  
V. Trtík ◽  
F. Sánchez ◽  
C. Ferrater ◽  
M. Varela ◽  
L. Fábrega ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Complete Analysis ◽  
Force Microscopy ◽  
Atomic Force ◽  
Strip Geometry ◽  
Droplet Density ◽  
Scanning Electron ◽  
Deposition Conditions

AbstractYBa2Cu3Oy/SrTiO3/La2/3Sr1/3MnO3 heterostructures have been deposited on LaAlO3(001) and SrTiO3(001) substrates by pulsed laser deposition. First, the influence of deposition conditions on crystallinity and morphology of single LSMO films was examined. Results were used for preparation of heterostructures in tri-layer and cross-strip geometry. Cross-strip geometry was defined by direct shadow mask patterning. Different characterization techniques have been used to determine and correlate the heterostructure properties. A complete analysis of the crystal structure has been carried out with a four-circle difractometer. Morphology has been studied by scanning electron microscopy and atomic force microscopy in order to determine surface roughness and droplet density. Basic electrical properties of films have been determined.

Cross-Sectional Nanoindentation of Alumina Thin Films Deposited by Pulsed Laser Deposition Process

2006 ◽  
Author(s):  
Sudheer Neralla ◽  
Sergey Yarmolenko ◽  
Dhananjay Kumar ◽  
Devdas Pai ◽  
Jag Sankar
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
High Hardness ◽  
Deposition Process ◽  
Laser Deposition ◽  
Cross Sectional ◽  
Adhesion Properties ◽  
Force Microscopy ◽  
Atomic Force

Alumina is a widely used ceramic material due to its high hardness, wear resistance and dielectric properties. The study of phase transformation and its correlation to the mechanical properties of alumina is essential. In this study, interfacial adhesion properties of alumina thin films are studied using cross-sectional nanoindentation (CSN) technique. Alumina thin films are deposited at 200 and 700 °C, on Si (100) substrates with a weak Silica interface, using pulsed laser deposition (PLD) process. Effect of annealing on the surface morphology of the thin films is studied using atomic force microscopy. Xray diffraction studies revealed that alumina thin films are amorphous in nature at 200 °C and polycrystalline with predominant gamma alumina phase at 700 °C.

scholarly journals Pulsed laser deposition of single-layer MoS2 on Au(111): from nanosized crystals to large-area films

2019 ◽  
Vol 1 (2) ◽  
pp. 643-655 ◽  
Author(s):  
Francesco Tumino ◽  
Carlo S. Casari ◽  
Matteo Passoni ◽  
Valeria Russo ◽  
Andrea Li Bassi
Keyword(s):  
Pulsed Laser Deposition ◽  
2D Materials ◽  
Optoelectronic Devices ◽  
Pulsed Laser ◽  
Single Layer ◽  
Laser Deposition ◽  
Large Area ◽  
Molybdenum Disulphide ◽  
High Quality ◽  
Nanosized Crystals

Molybdenum disulphide (MoS2) is a promising material for heterogeneous catalysis and novel 2D optoelectronic devices. In this work, single-layer MoS2 is synthesized on Au(111) by pulsed laser deposition, showing the potentialities of this technique in the synthesis of high-quality 2D materials films.

Growth of Carbon Nanotubes on Si Substrate Using Fe Catalyst Produced by Pulsed Laser Deposition

2008 ◽  
Vol 8 (11) ◽  
pp. 5748-5752
Author(s):  
S. Krishnamurthy ◽  
T. Donnelly ◽  
N. McEvoy ◽  
W. Blau ◽  
J. G. Lunney ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Pulsed Laser Deposition ◽  
Chemical Vapour ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Force Microscopy ◽  
Fe Catalyst ◽  
Atomic Force ◽  
Catalytic Nanoparticles ◽  
Size Controlled

We report the growth of carbon nanotubes on the size controlled iron catalytic nanoparticles. The nanotubes were grown by thermal chemical vapour deposition (CVD) in the temperature range 600–850 °C. The Fe films were deposited on silicon by pulsed laser deposition in vacuum. Atomic force microscopy measurements were performed on the catalytic nanoparticles. The topography of the catalytic nanoparticles shows the homogenous distribution of Fe catalyst. We observe the nanotubes are produced only at temperatures between 650 and 800 °C, and within this narrow temperature regime the yield of nanotubes reaches a maximum around 750 °C and then declines. Raman measurements illustrate a high G/D peak ratio indicating good nanotube quality. By further defining the size of the catalyst the diameter of these carbon nanotubes can be controlled.

Structural and Mechanical Properties of TiC/Ti and TiC/B4C Multilayers Deposited by Pulsed Laser Deposition

2002 ◽  
Vol 17 (6) ◽  
pp. 1390-1398 ◽  
Author(s):  
A. R. Phani ◽  
J. E. Krzanowski ◽  
J. J. Nainaparampil
Keyword(s):  
Mechanical Properties ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Degree Of Crystallinity ◽  
Bilayer Thickness ◽  
Orientation Relationships ◽  
X Ray ◽  
Pin On Disc

Multilayers of TiC/Ti and TiC/B4C have been deposited by pulsed laser deposition. Ti, B4C, and TiC targets were used to deposit multilayer films onto 440C steel and silicon substrates at 40 °C. The structural, compositional, and mechanical properties of the multilayers were examined by x-ray diffraction, x-ray photoelectron spectroscopy, transmission electron microscopy, and nanoindentation techniques. Tribological properties were also evaluated using a pin-on-disc friction and wear test. The TiC/Ti films were found to have a crystalline structure, and both (200)TiC/(100)Ti and (111)TiC/(101)Ti orientation relationships were found in these films. In the TiC/B4C films, only the sample with the largest bilayer thickness (25 nm) had significant crystallinity and only the TiC layer was crystalline. X-ray photoelectron spectroscopy depth profiles confirmed the presence of composition modulations in these films. Nanoindentation tests of the TiC/Ti multilayers showed hardness levels exceeding that predicted by the rule-of-mixtures. The TiC/B4C multilayers showed increasing hardness with decreasing bilayer thickness but reached only 22 GPa. The pin-on-disc tests gave friction values ranging from 0.3 to 0.9 for both sets of films. These results were correlated with the degree of crystallinity and grain structure of the films.

Influence of Post Growth Annealing on the Optical Properties of Gallium Nitride Films Grown by Pulsed Laser Deposition

2012 ◽  
Vol 1432 ◽  
Author(s):  
M. Baseer Haider ◽  
M. F. Al-Kuhaili ◽  
S. M. A. Durrani ◽  
Imran Bakhtiari
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Nitrogen Atmosphere ◽  
Laser Deposition ◽  
Optical Measurements ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

Abstract:Gallium nitride thin films were grown by pulsed laser deposition. Subsequently, post-growth annealing of the samples was performed at 400, and 600 oC in the nitrogen atmosphere. Surface morphology of the as-grown and annealed samples was performed by atomic force microscopy, surface roughness of the films improved after annealing. Chemical analysis of the samples was performed using x-ray photon spectroscopy, stoichiometric Gallium nitride thin films were obtained for the samples annealed at 600 oC. Optical measurements of the samples were performed to investigate the effect of annealing on the band gap and optical constants the films.

Highly Conductive and Optically Transparent Polycrystalline Iridium Oxide Thin Films Grown by Reactive Pulsed Laser Deposition

1997 ◽  
Vol 472 ◽  
Author(s):  
M.A. El Khakani ◽  
M. Chaker
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Deposition Temperature ◽  
Room Temperature ◽  
Optical Transmission ◽  
Ambient Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Structure Morphology ◽  
Quartz Substrates

ABSTRACTReactive pulsed laser deposition has been used to deposit IrO2 thin films on both SiO2 and fused quartz substrates, by ablating a metal iridium target in oxygen atmosphere. At a KrF laser intensity of about 1.7 × 109 W/cm2, IrO2 films were deposited at substrate deposition temperatures ranging from room-temperature to 700 °C under an optimum oxygen ambient pressure of 200 mTorr. The structure, morphology, electrical resistivity and optical transmission of the deposited films were characterized as a function of their deposition temperature (Td). High quality IrO2 films are obtained in the 400–600 °C deposition temperature range. They are polycrystalline with preferred orientations, depending on the substrate, and show a dense granular morphology. At a Td as low as 400 °C, highly conductive IrO2 films with room-temperature resistivities as low as (42±6) μΩ cm are obtained. Over the 300–600 °C Td range, the IrO2 films were found to exhibit a maximum optical transmission at 450 °C (∼ 45 % at 500 nm for 80 nm-thick films).

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