Material Properties of a SiOC Low Dielectric Constant Film with Extendibility to k < 2.7

2000 ◽  
Vol 612 ◽  
Author(s):  
Eugene S. Lopata ◽  
Lydia Young ◽  
John T. Felts
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Material Properties ◽  
Low Dielectric Constant ◽  
Adhesion Properties ◽  
Interlayer Dielectric ◽  
Good Thermal Stability ◽  
Low Dielectric ◽  
Excellent Adhesion ◽  
Low K

AbstractA plasma deposited SiOC very low k (VLK) interlayer dielectric (ILD) film has been developed which can be tuned to 2.5 = k = 3.0, demonstrates very good thermal stability, excellent adhesion properties, acceptable hardness, and an indication that it may be extendible to k < 2.5. This paper will disclose properties of this SiOC film which are important to a VLK ILD application.

Poly(Arylene Ethers) as Low Dielectric Constant Materials for ULSI Interconnect Applications

1996 ◽  
Vol 443 ◽  
Author(s):  
Raymond N. Vrtis ◽  
Kelly A. Heap ◽  
William F. Burgoyne ◽  
Lloyd M. Robeson
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Moisture Absorption ◽  
Dielectric Material ◽  
Mechanical Analysis ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Arylene Ether ◽  
Low Dielectric Constant Materials ◽  
Excellent Adhesion

AbstractPoly(arylene ethers)s are low dielectric constant organic spin on materials. PAE-2, which is a non-fluorinated poly(arylene ether), exhibits a dielectric constant below 3.0, thermal stability greater than 425 °C as well as excellent adhesion to Si, SiO2, and Al. These are the major atributes which makes it a very attractive candidate for integration as an interlevel or inter-metal dielectric material (ILD). Material properties including dielectric constant, thermal stability, moisture absorption, and mechanical analysis will be discussed.

Novel Materials as Interlayer Low-K Dielectrics for CMOS Interconnect Applications

2011 ◽  
Vol 110-116 ◽  
pp. 5380-5383
Author(s):  
Tejas R. Naik ◽  
Veena R. Naik ◽  
Nisha P. Sarwade
Keyword(s):  
Dielectric Constant ◽  
Integrated Circuits ◽  
Dielectric Materials ◽  
Low Dielectric Constant ◽  
Interlayer Dielectric ◽  
Novel Materials ◽  
Low Dielectric ◽  
Processing Properties ◽  
New Generation ◽  
Low K

Scaling down the integrated circuits has resulted in the arousal of number of problems like interaction between interconnect, crosstalk, time delay etc. These problems can be overcome by new designs and by use of corresponding novel materials, which may be a solution to these problems. In the present paper we try to put forward very recent development in the use of novel materials as interlayer dielectrics (ILDs) having low dielectric constant (k) for CMOS interconnects. The materials presented here are porous and hybrid organo-inorganic new generation interlayer dielectric materials possessing low dielectric constant and better processing properties.

Atomic Layer Deposition of Tantalum Nitride on Organosilicate and Organic Polymerbased Low Dielectric Constant Materials

2004 ◽  
Vol 812 ◽  
Author(s):  
Oscar van der Straten ◽  
Yu Zhu ◽  
Jonathan Rullan ◽  
Katarzyna Topol ◽  
Kathleen Dunn ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Tantalum Nitride ◽  
Experimental Methodology ◽  
Low Dielectric Constant ◽  
Adhesion Properties ◽  
Low Dielectric ◽  
Layer Deposition ◽  
Low K

AbstractA previously developed metal-organic atomic layer deposition (ALD) tantalum nitride (TaNx) process was employed to investigate the growth of TaNx liners on low dielectric constant (low-k) materials for liner applications in advanced Cu/low-k interconnect metallization schemes. ALD of TaNx was performed at a substrate temperature of 250°C by alternately exposing low-k materials to tertbutylimido-tris(diethylamido)tantalum (TBTDET) and ammonia (NH3), separated by argon purge steps. The dependence of TaNx film thickness on the number of ALD cycles performed on both organosilicate and organic polymer-based low-k materials was determined and compared to baseline growth characteristics of ALD TaNx on SiO2. In order to assess the effect of the deposition of TaNx on surface roughness, atomic force microscopy (AFM) measurements were carried out prior to and after the deposition of TaNx on the low-k materials. The stability of the interface between TaNx and the low-k materials after thermal annealing at 350°C for 30 minutes was studied by examining interfacial roughness profiles using cross-sectional imaging in a high-resolution transmission electron microscope (HR-TEM). The wetting and adhesion properties of Cu/low-k were quantified using a solid-state wetting experimental methodology after integration of ALD TaNx liners with Cu and low-k dielectrics.

Low Dielectric Constant Fluorinated Polyimides for Interlayer Dielectric Applications

1997 ◽  
Vol 476 ◽  
Author(s):  
John Pellerin ◽  
Robert Fox ◽  
Huei-Min Ho
Keyword(s):  
Dielectric Constant ◽  
Electrical Performance ◽  
Low Dielectric Constant ◽  
Interlayer Dielectric ◽  
Metal Structures ◽  
Single Level ◽  
Low Dielectric ◽  
Fluorinated Polyimide ◽  
Fluorinated Polyimides ◽  
Low K

AbstractThis paper presents the results of development, characterization and integration screening of low dielectric constant (low k) fluorinated polyimides for interlayer dielectric applications. Evolution of these materials has progressed with the intent of improving fundamental thin film properties, such as thermal stress behavior, modulus, CTE, and dielectric constant. Further refinements to fluorinated polyimides have been to improve their process compatibility and integration characteristics, primarily in the area of deep sub-micron gap filling. The avenues taken to attain these objectives will be illustrated.Subsequent integration of low k fluorinated polyimides has been achieved for a completed single-level metal BEOL test vehicle to highlight the impacts of the film's adhesion, mechanical and thermomechanical properties. In addition, the completed fluorinated polyimide single-level metal structures have been used to characterize electrical performance in contrast to single-level metal structures with TEOS dielectric. Intralevel capacitance and leakage current have been measured with dual comb and serpentine structures. Modeling has been applied to verify dielectric constant in submicron geometries from the capacitance measurements.

Direct Patterning of Low-K Material for Damascene Process

1997 ◽  
Vol 476 ◽  
Author(s):  
Cheng-Jye Chu ◽  
C-T. Chu ◽  
Q. Wei
Keyword(s):  
Dielectric Constant ◽  
Mechanical Strength ◽  
Temperature Stability ◽  
Low Dielectric Constant ◽  
Material System ◽  
High Temperature Stability ◽  
High Mechanical Strength ◽  
Good Thermal Stability ◽  
Low Dielectric ◽  
Low K

AbstractThere are several activities in the development of low dielectric constant materials, including fluorlnation of SiO2, low-k organic polymers, and porous materials. No one material satisfies all the requirements for multilevel interconnections, which include low dielectric constant, high mechanical strength, good dimensional stability, good high temperature stability, easy processing, and low H2O absorption and outgassing. In this research, a new material system has been studied. This process-controlled low-k material can have dielectric constant as low as 2.0 with good thermal stability. It can provide low viscosity for reflow processing to achieve excellent planarization and gap filling. Low moisture uptake and high mechanical strength can be achieved. Most interesting is, it can be made to be photosensitive at deep-UV range, which provides the possibility of eliminating many chemicals and complicated processes in photolithography. Process cost can be expected to drop significantly. Damascene and dual damascene processes were proposed using this new low-k material, which can be much simpler compared to the traditional process.

scholarly journals Ternary composites of linear and hyperbranched polyimides with nanoscale silica for low dielectric constant, high transparency, and high thermal stability

RSC Advances ◽  
2015 ◽  
Vol 5 (50) ◽  
pp. 40046-40054 ◽  
Author(s):  
Seongku Kim ◽  
Shinji Ando ◽  
Xiaogong Wang
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Polymer Films ◽  
High Thermal Stability ◽  
Optical Transparency ◽  
Low Dielectric Constant ◽  
High Transparency ◽  
Good Thermal Stability ◽  
Low Dielectric ◽  
Hyperbranched Polyimides

A new series of ternary polyimide–silica composites was developed to obtain polymer films with low dielectric constant, high optical transparency, and good thermal stability.

Structire, Properties, and Process Characteristics of Low-K Materials Prepared by PECVD

1999 ◽  
Vol 565 ◽  
Author(s):  
Y. Shimogaki ◽  
S. W. Lim ◽  
E. G. Loh ◽  
Y. Nakano ◽  
K. Tada ◽  
...  
Keyword(s):  
Growth Rate ◽  
Dielectric Constant ◽  
Gas Flow ◽  
Structural Changes ◽  
Silicon Oxide ◽  
Reactive Species ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Step Coverage ◽  
Low K

AbstractLow dielectric constant F-doped silicon oxide films (SiO:F) can be prepared by adding fluorine source, like as CF4 to the conventional PECVD processes. We could obtain SiO:F films with dielectric constant as low as 2.6 from the reaction mixture of SiH4/N2 O/CF4. The structural changes of the oxides were sensitively detected by Raman spectroscopy. The three-fold ring and network structure of the silicon oxides were selectively decreased by adding fluorine into the film. These structural changes contribute to the decrease ionic polarization of the film, but it was not the major factor for the low dielectric constant. The addition of fluorine was very effective to eliminate the Si-OH in the film and the disappearance of the Si-OH was the key factor to obtain low dielectric constant. A kinetic analysis of the process was also performed to investigate the reaction mechanism. We focused on the effect of gas flow rate, i.e. the residence time of the precursors in the reactor, on growth rate and step coverage of SiO:F films. It revealed that there exists two species to form SiO:F films. One is the reactive species which contributes to increase the growth rate and the other one is the less reactive species which contributes to have uniform step coverage. The same approach was made on the PECVD process to produce low-k C:F films from C2F4, and we found ionic species is the main precursor to form C:F films.

The characterization and preparation of porous low dielectric films using various cyclodextrins as template materials

2003 ◽  
Vol 766 ◽  
Author(s):  
Jin-Heong Yim ◽  
Jung-Bae Kim ◽  
Hyun-Dam Jeong ◽  
Yi-Yeoul Lyu ◽  
Sang Kook Mah ◽  
...  
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Dielectric Constant ◽  
Pore Structure ◽  
Pore Diameter ◽  
Dielectric Films ◽  
Low Dielectric Constant ◽  
Cyclodextrin Derivatives ◽  
Low Dielectric ◽  
Low K

AbstractPorous low dielectric films containing nano pores (∼20Å) with low dielectric constant (<2.2), have been prepared by using various kinds of cyclodextrin derivatives as porogenic materials. The pore structure such as pore size and interconnectivity can be controlled by changing functional groups of the cyclodextrin derivatives. We found that mechanical properties of porous low-k thin film prepared with mCSSQ (modified cyclic silsesquioxane) precursor and cyclodextrin derivatives were correlated with the pore interconnection length. The longer the interconnection length of nanopores in the thin film, the worse the mechanical properties of the thin film (such as hardness and modulus) even though the pore diameter of the films were microporous (∼2nm).

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