Comparison Of Dry-Etch Techniques For Gan, Inn, And Ain

1997 ◽  
Vol 483 ◽  
Author(s):  
R. J. Shul ◽  
G. A. Vawter ◽  
C. G. Willison ◽  
M. M. Bridges ◽  
J. W. Lee ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Electron Cyclotron Resonance ◽  
Ion Beam ◽  
High Plasma ◽  
Group Iii ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Etch Rates ◽  
Group Iii Nitride ◽  
Dry Etch

AbstractFabrication of group-III nitride devices relies on the ability to pattern features to depths ranging from ∼1000 Å to > 5 μm with anisotropic profiles, smooth morphologies, selective etching of one material over another, and a low degree of plasma-induced damage. In this study, GaN etch rates and etch profiles are compared using reactive ion etch (RIE), reactive ion beam etching (RIBE), electron cyclotron resonance (ECR), and inductively coupled plasma (ICP) etch systems. RIE yielded the slowest etch rates and sloped etch profiles despite dc-biases > −900 V. ECR and ICP etching yielded the highest rates with anisotropic profiles due to their high plasma flux and the ability to control ion energies independently of plasma density. RIBE etch results also showed anisotropic profiles with slower etch rates than either ECR or ICP possibly due to lower ion flux. InN and AIN etch characteristics are also compared using ICP and RIBE.

scholarly journals Chlorine-Based Plasma Etching of GaN

1996 ◽  
Vol 449 ◽  
Author(s):  
R. J. Shul ◽  
R. D. Briggs ◽  
S. J. Pearton ◽  
C. B. Vartuli ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Electron Cyclotron Resonance ◽  
Wide Band ◽  
Group Iii Nitrides ◽  
Wide Band Gap ◽  
Light Emitting ◽  
Group Iii ◽  
Inductively Coupled ◽  
Group Iii Nitride

ABSTRACTThe wide band gap group-III nitride materials continue to generate interest in the semiconductor community with the fabrication of green, blue, and ultraviolet light emitting diodes (LEDs), blue lasers, and high temperature transistors. Realization of more advanced devices requires pattern transfer processes which are well controlled, smooth, highly anisotropic and have etch rates exceeding 0.5 μm/min. The utilization of high-density chlorine-based plasmas including electron cyclotron resonance (ECR) and inductively coupled plasma (ICP) systems has resulted in improved etch quality of the group-III nitrides over more conventional reactive ion etch (RIE) systems.

Inductively Coupled High-Density Plasma-Induced Etch Damage of GaN MESFETs

2000 ◽  
Vol 622 ◽  
Author(s):  
R. J. Shul ◽  
L. Zhang ◽  
A. G. Baca ◽  
C. G. Willison ◽  
J. Han ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Ion Bombardment ◽  
Critical Dimension ◽  
High Plasma ◽  
Substrate Material ◽  
Device Performance ◽  
Inductively Coupled ◽  
Profile Control ◽  
Etch Rates ◽  
Anisotropic Etch

ABSTRACTThe fabrication of a wide variety of GaN-based photonic and electronic devices depends on dry etching, which typically requires ion-assisted removal of the substrate material. Under conditions of both high plasma flux and energetic ion bombardment, GaN etch rates greater than 0.5 νm/min and anisotropic etch profiles are readily achieved in Inductively Coupled Plasma (ICP) etch systems. Unfortunately, under these conditions plasma-induced damage often occurs. Attempts to minimize such damage by reducing the ion energy or increasing the chemical activity in the plasma often result in a loss of etch rate or profile control which can limit dimensional control and reduce the utility of the process for device applications requiring anisotropic etch profiles. It is therefore necessary to develop plasma etch processes which couple anisotropy for critical dimension and sidewall profile control and high etch rates with low-damage for optimum device performance. In this study we report changes in source resistance, reverse breakdown voltage, transconductance, and drain saturation current for GaN MESFET structures exposed to an Ar ICP plasma. In general, device performance was sensitive to ion bombardment energy and ion flux.

Dry and Wet Etching for Group III – Nitrides

1998 ◽  
Vol 537 ◽  
Author(s):  
I. Adesida ◽  
C. Youtsey ◽  
A. T. Ping ◽  
F. Khan ◽  
L. T. Romano ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Group Iii Nitrides ◽  
Device Fabrication ◽  
Wet Etching ◽  
Microwave Transistors ◽  
Group Iii ◽  
Inductively Coupled ◽  
Dislocation Densities ◽  
High Bond ◽  
Etch Rates

AbstractThe group-III nitrides have become versatile semiconductors for short wavelength emitters, high temperature microwave transistors, photodetectors, and field emission tips. The processing of these materials is significant due to the unusually high bond energies that they possess. The dry and wet etching methods developed for these materials over the last few years are reviewed. High etch rates and highly anisotropic profiles obtained by inductively-coupled-plasma reactive ion etching are presented. Photoenhanced wet etching provides an alternative path to obtaining high etch rates without ion-induced damage. This method is shown to be suitable for device fabrication as well as for the estimation of dislocation densities in n-GaN. This has the potential of developing into a method for rapid evaluation of materials.

scholarly journals Group-III Nitride ETCH Selectivity IN BCl /Cl ICP Plasmas

1999 ◽  
Vol 4 (S1) ◽  
pp. 823-833 ◽  
Author(s):  
R. J. Shul ◽  
L. Zhang ◽  
C. G. Willison ◽  
J. Han ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Plasma Chemistry ◽  
Optical Emission ◽  
Group Iii Nitrides ◽  
Plasma Etch ◽  
Source Power ◽  
Group Iii ◽  
Inductively Coupled ◽  
Etch Rates ◽  
Group Iii Nitride ◽  
Coupled Plasmas

Patterning the group-III nitrides has been challenging due to their strong bond energies and relatively inert chemical nature as compared to other compound semiconductors. Plasma etch processes have been used almost exclusively to pattern these films. The use of high-density plasma etch systems, including inductively coupled plasmas (ICP), has resulted in relatively high etch rates (often greater than 1.0 µm/min) with anisotropic profiles and smooth etch morphologies. However, the etch mechanism is often dominated by high ion bombardment energies which can minimize etch selectivity. The use of an ICP-generated BCl3 /Cl2 plasma has yielded a highly versatile GaN etch process with rates ranging from 100 to 8000 Å/min making this plasma chemistry a prime candidate for optimization of etch selectivity. In this study, we will report ICP etch rates and selectivities for GaN, AlN, and InN as a function of BCl3/Cl2 flow ratios, cathode rf-power, and ICP-source power. GaN:InN and GaN:AlN etch selectivities were typically less than 7:1 and showed the strongest dependence on flow ratio. This trend may be attributed to faster GaN etch rates observed at higher concentrations of atomic Cl which was monitored using optical emission spectroscopy (OES).

scholarly journals Dry and Wet Etching for Group III – Nitrides

1999 ◽  
Vol 4 (S1) ◽  
pp. 38-48 ◽  
Author(s):  
I. Adesida ◽  
C. Youtsey ◽  
A. T. Ping ◽  
F. Khan ◽  
L. T. Romano ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Group Iii Nitrides ◽  
Device Fabrication ◽  
Wet Etching ◽  
Microwave Transistors ◽  
Group Iii ◽  
Inductively Coupled ◽  
Dislocation Densities ◽  
High Bond ◽  
Etch Rates

The group-III nitrides have become versatile semiconductors for short wavelength emitters, high temperature microwave transistors, photodetectors, and field emission tips. The processing of these materials is significant due to the unusually high bond energies that they possess. The dry and wet etching methods developed for these materials over the last few years are reviewed. High etch rates and highly anisotropic profiles obtained by inductively-coupled-plasma reactive ion etching are presented. Photoenhanced wet etching provides an alternative path to obtaining high etch rates without ion-induced damage. This method is shown to be suitable for device fabrication as well as for the estimation of dislocation densities in n-GaN. This has the potential of developing into a method for rapid evaluation of materials.

High Density Plasma Etching of Ta2O5-Selectivity to Si and Effect of UV Light Enhancement

1999 ◽  
Vol 606 ◽  
Author(s):  
K.P Lee ◽  
H. Cho ◽  
R. K. Singh ◽  
S. J. Pearton ◽  
C. Hobbs ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Uv Light ◽  
Inductively Coupled ◽  
Uv Illumination ◽  
Icp Etching ◽  
Light Enhancement ◽  
Order Of Magnitude ◽  
Etch Rates ◽  
Post Deposition

AbstractEtch rates up to 1200 Åmin−1 for Ta2O5 were achieved in both SF6/Ar and Cl2/Ar discharges under Inductively Coupled Plasma conditions. The etch rates with N2/Ar or CH4/H2/Ar chemistries were an order of magnitude lower. There was no effect of post deposition annealing on the Ta2O5 etch rates, at least up to 800 °C. Selectivities to Si of ∼1 were achieved at low source powers, but at higher powers the Si typically etched 4-7 times faster than Ta 20 5. UV illumination during ICP etching in both SF6/Ar and Cl2/Ar produced significant enhancements (up to a factor of 2) in etch rates due to photo-assisted desorption of the TaFx products. The UV illumination is an alternative to employing elevated sample temperatures during etching to increase the volatility of the etch products and may find application where the thermal budget should be minimized during processing.

scholarly journals Group-III Nitride Etch Selectivity in BCl3/Cl2 ICP Plasmas

1998 ◽  
Vol 537 ◽  
Author(s):  
R. J. Shul ◽  
L. Zhang ◽  
C. G. Willison ◽  
J. Han ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Plasma Chemistry ◽  
Optical Emission ◽  
Group Iii Nitrides ◽  
Plasma Etch ◽  
Source Power ◽  
Group Iii ◽  
Inductively Coupled ◽  
Etch Rates ◽  
Group Iii Nitride ◽  
Coupled Plasmas

AbstractPatterning the group-III nitrides has been challenging due to their strong bond energies and relatively inert chemical nature as compared to other compound semiconductors. Plasma etch processes have been used almost exclusively to pattern these films. The use of high-density plasma etch systems, including inductively coupled plasmas (ICP), has resulted in relatively high etch rates (often greater than 1.0 μm/min) with anisotropic profiles and smooth etch morphologies. However, the etch mechanism is often dominated by high ion bombardment energies which can minimize etch selectivity. The use of an ICP-generated BCl3/Cl2 plasma has yielded a highly versatile GaN etch process with rates ranging from 100 to 8000 Å/min making this plasma chemistry a prime candidate for optimization of etch selectivity. In this study, we will report ICP etch rates and selectivities for GaN, AIN, and InN as a function of BCl3/C12 flow ratios, cathode rf-power, and ICP-source power. GaN:InN and GaN:AIN etch selectivities were typically less than 7:1 and showed the strongest dependence on flow ratio. This trend may be attributed to faster GaN etch rates observed at higher concentrations of atomic Cl which was monitored using optical emission spectroscopy (OES).

Two-step thinning fabrication of giant magnetoresistance sensors for flexible applications

2014 ◽  
Vol 28 (10) ◽  
pp. 1450081 ◽  
Author(s):  
Cong Yin ◽  
Dan Xie ◽  
Jian-Long Xu ◽  
Tian-Ling Ren
Keyword(s):  
Inductively Coupled Plasma ◽  
Giant Magnetoresistance ◽  
Ion Beam ◽  
Spin Valve ◽  
Mechanical Damage ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Gmr Sensors ◽  
Flexible Applications ◽  
Gmr Sensor

Spin valve giant magnetoresistance (GMR) sensors were prepared by a two-step thinning method combining grind thinning and inductively coupled plasma (ICP) etching together. The fabrication processes of front GMR sensors and backside ICP etching were described in detail. Magnetoresistance ratio of about 4.24% and coercive field of approximately 11 Oe were obtained in a tested bendable GMR sensor. The variations of the magnetic property in GMR sensors were explained mainly from the temperature, ion beam damage and mechanical damage generated by the fabrication process.

Sign in / Sign up

Export Citation Format

Share Document