Disptacement of Arsenic from Substitutional Sites in Silicon by MEV HE+ Irradiation

1985 ◽  
Vol 45 ◽  
Author(s):  
E A Maydell-Ondrusz ◽  
I H Wilson ◽  
K G Stephens
Keyword(s):  
Electron Beam ◽  
Single Crystals ◽  
Cross Section ◽  
Cross Sections ◽  
Electron Beam Irradiation ◽  
Arsenic Concentration ◽  
Beam Irradiation ◽  
Mbe Growth ◽  
Silicon Doped ◽  
Scanning Electron

ABSTRACTCross-sections were determined for displacement of arsenic from substitutional sites in silicon by 1.5MeV He+ ions. Results are presented for channelled and random incidence on (111) and (100) silicon, doped by arsenic implantation and annealed by scanning electron beam irradiation. Layers doped during MBE growth were also studied for comparison.Inner L-shell ionisation of host atoms is proposed to explain the observed displacement cross-section and its variation with arsenic concentration. The results are used to indicate the limits for using Rutherford backscattering and channelling techniques to measure the substitutionality of dopants in single crystals.

scholarly journals Electron Beam Irradiation Induced Multiwalled Carbon Nanotubes Fusion inside SEM

Scanning ◽  
2017 ◽  
Vol 2017 ◽  
pp. 1-8 ◽  
Author(s):  
Daming Shen ◽  
Donglei Chen ◽  
Zhan Yang ◽  
Huicong Liu ◽  
Tao Chen ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Electron Beam ◽  
Electron Microscope ◽  
Multiwalled Carbon Nanotubes ◽  
Electron Beam Irradiation ◽  
Tensile Force ◽  
Beam Irradiation ◽  
Multiwalled Carbon ◽  
Near Future ◽  
Scanning Electron

This paper reported a method of multiwalled carbon nanotubes (MWCNTs) fusion inside a scanning electron microscope (SEM). A CNT was picked up by nanorobotics manipulator system which was constructed in SEM with 21 DOFs and 1 nm resolution. The CNT was picked up and placed on two manipulators. The tensile force was 140 nN when the CNT was pulled into two parts. Then, two parts of the CNT were connected to each other by two manipulators. The adhered force between two parts was measured to be about 20 nN. When the two parts of CNT were connected again, the contact area was fused by focused electron beam irradiation for 3 minutes. The tensile force of the junction was measured to be about 100 nN. However, after fusion, the tensile force was five times larger than the tensile force connected only by van der Waals force. This force was 70 percent of the tensile force before pulling out of CNTs. The results revealed that the electron beam irradiation was a promising method for CNT fusion. We hope this technology will be applied to nanoelectronics in the near future.

Nanoscale controlled Li-insertion reaction induced by scanning electron-beam irradiation in a Li4Ti5O12 electrode material for lithium-ion batteries

2017 ◽  
Vol 19 (18) ◽  
pp. 11581-11587 ◽  
Author(s):  
Mitsunori Kitta ◽  
Masanori Kohyama
Keyword(s):  
Electron Beam ◽  
Scanning Transmission Electron Microscopy ◽  
Electron Beam Irradiation ◽  
Lithium Ion ◽  
Insertion Reaction ◽  
Beam Irradiation ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
New Type ◽  
Scanning Electron

Electron beam of scanning transmission electron microscopy can induce nanoscale-controlled Li-insertion in Li4Ti5O12 electrode, which is significant as a new type of electron beam-assisted chemical reactions for local structural and property modifications.

Pulsed electron beam irradiation of ion‐implanted copper single crystals

1980 ◽  
Vol 36 (7) ◽  
pp. 564-566 ◽  
Author(s):  
J. K. Hirvonen ◽  
J. M. Poate ◽  
A. Greenwald ◽  
R. Little
Keyword(s):  
Electron Beam ◽  
Single Crystals ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Pulsed Electron Beam ◽  
Copper Single Crystals ◽  
Ion Implanted

Studies of the Effects of Ion-Implantation and Electron Beam Irradiation on CuInSe2 Single Crystals

1992 ◽  
Vol 262 ◽  
Author(s):  
C. A. Mullan ◽  
C. J. Kiely ◽  
A. Rockett ◽  
M. Imanieh ◽  
M. V. Yakushev ◽  
...  
Keyword(s):  
Electron Beam ◽  
Single Crystals ◽  
Electron Beam Irradiation ◽  
High Dose ◽  
Beam Irradiation ◽  
Thin Foils ◽  
Microstructural Effects ◽  
Vertical Bridgman ◽  
Electron Microscopes ◽  
P Type

ABSTRACTA series of CuInSe2 single crystals which were grown by the vertical Bridgman technique have been implanted with oxygen and xenon ions. These implants tend to cause a change from n to p-type conductivity and an enhancement of the photoconductivity. We present HREM and SIMS characterisation of the microstructural effects caused by high dose ion implants on CuInSe2. We also correlate our data with calculated ion implant profiles. In addition, we show that CuInSe2 thin foils can undergo significant degradation under the electron beam irradiation conditions which are commonly encountered in electron microscopes.

Domain Switching by Electron Beam Irradiation in SBN61:Ce Single Crystals Covered by Dielectric Layer

2020 ◽  
Vol 67 (1) ◽  
pp. 191-196 ◽  
Author(s):  
Dmitry S. Chezganov ◽  
Vera A. Shikhova ◽  
Vyacheslav V. Fedorovyh ◽  
Evgeny O. Vlasov ◽  
Maria A. Chuvakova ◽  
...  
Keyword(s):  
Electron Beam ◽  
Single Crystals ◽  
Dielectric Layer ◽  
Electron Beam Irradiation ◽  
Domain Switching ◽  
Beam Irradiation
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