Properties of New Low Dielectric Constant Spin-on Silicon Oxide based Polymers

Low dielectric constant materials (k < 3.0) have the advantage that higher performance IC devices may be manufactured with minimal increases in chip size. The reduced capacitance given by these materials permits shrinking spacing between metal lines to below 0.25 μm and the ability to decrease the number of levels of metal in a device. The technologies being considered for low k applications are CVD or spin-on of inorganic or organic polymeric materials. Traditional spin-on silicates or siloxanes have been used as planarizing dielectrics during the last 15 years and usually have k > 3.0.

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Integration Issues for Low Dielectric Constant Materials in each Generation of ULSI'S

MRS Proceedings ◽

10.1557/proc-565-161 ◽

1999 ◽

Vol 565 ◽

Author(s):

Hideki Gomi ◽

Koji Kishimoto ◽

Tatsuya Usami ◽

Ken-ichi Koyanagi ◽

Takashi Yokoyama ◽

...

Keyword(s):

Dielectric Constant ◽

Silicon Oxide ◽

Process Integration ◽

Low Dielectric Constant ◽

Next Generation ◽

Hydrogen Silsesquioxane ◽

Low Dielectric ◽

Low Dielectric Constant Materials ◽

Fluorinated Silicon Oxide ◽

Low K

AbstractThe technologies utilizing Fluorinated Silicon Oxide (FSG, k=3.6) and Hydrogen Silsesquioxane (HSQ, k=3.0) have been established for 0.25-μm and 0.18-μm generation ULSIs. However, low-k materials for the next generation ULSIs, which have a dielectric constant of less than 3.0, have not become mature yet. In this paper, we review process integration issues in applying FSG and HSQ, and describe integration results and device performance using Fluorinated Amorphous Carbon (a-C:F, k=2.5) as one of the promising low-k materials for the next generation ULSIs.

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Integration Issues for Low Dielectric Constant Materials in each Generation of ULSI's

MRS Proceedings ◽

10.1557/proc-564-509 ◽

1999 ◽

Vol 564 ◽

Cited By ~ 1

Author(s):

Hideki Gomi ◽

Koji Kishimoto ◽

Tatsuya Usami ◽

Ken-ichi Koyanagi ◽

Takashi Yokoyama ◽

...

Keyword(s):

Dielectric Constant ◽

Silicon Oxide ◽

Process Integration ◽

Low Dielectric Constant ◽

Next Generation ◽

Hydrogen Silsesquioxane ◽

Low Dielectric ◽

Low Dielectric Constant Materials ◽

Fluorinated Silicon Oxide ◽

Low K

AbstractThe technologies utilizing Fluorinated Silicon Oxide (FSG, k=3.6) and Hydrogen Silsesquioxane (HSQ, k=3.0) have been established for 0.25-µm and 0.1 8-µm generation ULSIs. However, low-k materials for the next generation ULSIs, which have a dielectric constant of less than 3.0, have not become mature yet. In this paper, we review process integration issues in applying FSG and HSQ, and describe integration results and device performance using Fluorinated Amorphous Carbon (a-C:F, k=2.5) as one of the promising low-k materials for the next generation ULSIs.

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Organic and Inorganic Spin-On Polymers for Low-Dielectric-Constant Applications

MRS Bulletin ◽

10.1557/s0883769400034175 ◽

1997 ◽

Vol 22 (10) ◽

pp. 33-38 ◽

Cited By ~ 50

Author(s):

Nigel P. Hacker

Keyword(s):

Dielectric Constant ◽

Integrated Circuit ◽

Chemical Properties ◽

Chemical Vapor ◽

Polymeric Materials ◽

Dielectric Constants ◽

Low Dielectric Constant ◽

Low Dielectric ◽

Chip Size ◽

Low Dielectric Constant Materials

Low-dielectric-constant materials (k < 3.0) have the advantage of facilitating manufacture of higher performance integrated-circuit (IC) devices with minimal increases in chip size. The reduced capacitance given by these materials permits shrinkage of spacing between metal lines to below 0.25 μm and the ability to decrease the number of levels of metal in a device. The technologies being considered for low-k applications are chemical vapor deposition (CVD) or spin-on of polymeric materials. For both types of processes, there are methods and materials capable of giving k < 3.0 dielectric stacks. This article will focus on the spin-on approach and discuss the properties of both organic and inorganic spin-on polymers.While CVD SiO2 has been the mainstay of the industry, spin-on materials are appropriate for many dielectric applications. Polyimides have applications as electrical insulators, and traditional spin-on silicates or siloxanes (k > 3.0) have served as planarizing dielectrics during the last 15 years. The newer spin-on polymers have greatly enhanced mechanical, thermal, and chemical properties, exhibiting lower dielectric constants than the traditional materials.

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Structire, Properties, and Process Characteristics of Low-K Materials Prepared by PECVD

MRS Proceedings ◽

10.1557/proc-565-255 ◽

1999 ◽

Vol 565 ◽

Author(s):

Y. Shimogaki ◽

S. W. Lim ◽

E. G. Loh ◽

Y. Nakano ◽

K. Tada ◽

...

Keyword(s):

Growth Rate ◽

Dielectric Constant ◽

Gas Flow ◽

Structural Changes ◽

Silicon Oxide ◽

Reactive Species ◽

Low Dielectric Constant ◽

Low Dielectric ◽

Step Coverage ◽

Low K

AbstractLow dielectric constant F-doped silicon oxide films (SiO:F) can be prepared by adding fluorine source, like as CF4 to the conventional PECVD processes. We could obtain SiO:F films with dielectric constant as low as 2.6 from the reaction mixture of SiH4/N2 O/CF4. The structural changes of the oxides were sensitively detected by Raman spectroscopy. The three-fold ring and network structure of the silicon oxides were selectively decreased by adding fluorine into the film. These structural changes contribute to the decrease ionic polarization of the film, but it was not the major factor for the low dielectric constant. The addition of fluorine was very effective to eliminate the Si-OH in the film and the disappearance of the Si-OH was the key factor to obtain low dielectric constant. A kinetic analysis of the process was also performed to investigate the reaction mechanism. We focused on the effect of gas flow rate, i.e. the residence time of the precursors in the reactor, on growth rate and step coverage of SiO:F films. It revealed that there exists two species to form SiO:F films. One is the reactive species which contributes to increase the growth rate and the other one is the less reactive species which contributes to have uniform step coverage. The same approach was made on the PECVD process to produce low-k C:F films from C2F4, and we found ionic species is the main precursor to form C:F films.

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Effect of Thermal Treatment on Carbon-Doped Silicon Oxide Low Dielectric Constant Materials

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2005.084 ◽

2005 ◽

Vol 5 (4) ◽

pp. 550-557 ◽

Cited By ~ 1

Author(s):

J. L. Xie ◽

J. Y. Lin ◽

Y. H. Wang ◽

B. Narayanan ◽

M. R. Wang ◽

...

Keyword(s):

Dielectric Constant ◽

Thermal Treatment ◽

Silicon Oxide ◽

Low Dielectric Constant ◽

Carbon Doped ◽

Low Dielectric ◽

Doped Silicon ◽

Low Dielectric Constant Materials

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Prospects for dielectric constant reduction in integrated circuits interconnects

MRS Proceedings ◽

10.1557/opl.2014.609 ◽

2014 ◽

Vol 1692 ◽

Cited By ~ 1

Author(s):

Maxime Darnon ◽

Nicolas Posseme ◽

Thierry Chevolleau ◽

Thibaut L. David

Keyword(s):

Dielectric Constant ◽

Integrated Circuits ◽

Low Dielectric Constant ◽

Low Dielectric ◽

Inner Surface ◽

Low Dielectric Constant Materials ◽

Low K

ABSTRACTTo improve the integrated circuits’ performance and continue the downscaling of dimensions, it is necessary to use low dielectric constant materials as interconnects insulators. Current porous SiCOH low-k dielectrics are now reaching their limits since their porosity enables the diffusion of species that modify the inner surface of the pores. To further reduce the dielectric constant, it is necessary to change paradigm in interconnects fabrication. In this paper, we discuss the most promising innovations in terms of process, materials and architectures to reduce the interconnects insulators dielectric constant.

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The characterization and preparation of porous low dielectric films using various cyclodextrins as template materials

MRS Proceedings ◽

10.1557/proc-766-e8.10 ◽

2003 ◽

Vol 766 ◽

Cited By ~ 7

Author(s):

Jin-Heong Yim ◽

Jung-Bae Kim ◽

Hyun-Dam Jeong ◽

Yi-Yeoul Lyu ◽

Sang Kook Mah ◽

...

Keyword(s):

Thin Film ◽

Mechanical Properties ◽

Dielectric Constant ◽

Pore Structure ◽

Pore Diameter ◽

Dielectric Films ◽

Low Dielectric Constant ◽

Cyclodextrin Derivatives ◽

Low Dielectric ◽

Low K

AbstractPorous low dielectric films containing nano pores (∼20Å) with low dielectric constant (<2.2), have been prepared by using various kinds of cyclodextrin derivatives as porogenic materials. The pore structure such as pore size and interconnectivity can be controlled by changing functional groups of the cyclodextrin derivatives. We found that mechanical properties of porous low-k thin film prepared with mCSSQ (modified cyclic silsesquioxane) precursor and cyclodextrin derivatives were correlated with the pore interconnection length. The longer the interconnection length of nanopores in the thin film, the worse the mechanical properties of the thin film (such as hardness and modulus) even though the pore diameter of the films were microporous (∼2nm).

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