Low Pressure CVD Growth of AlxTi1-xN Films with Tetrakis- (Dimethylamido)Titanium (Tdmat) and Dimethyl Aluminum Hydride (DMAH) Precursors

1997 ◽  
Vol 495 ◽  
Author(s):  
Y.-M. Sun ◽  
J. Endle ◽  
J. G. Ekerdt ◽  
N. M. Russell ◽  
M. D. Healy ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Aluminum Hydride ◽  
Chemical Vapor ◽  
Initial Growth ◽  
Lower Growth ◽  
Al Content ◽  
Partial Pressures ◽  
Cvd Growth ◽  
C And N

ABSTRACTAlxTi1-xN film growth has been studied by a organometallic chemical vapor deposition and in-situ X-ray photoelectron spectroscopy. Terakis(dimethylamido)titanium (TDMAT) and dimethyl aluminum hydride (DMAH) were used as the Ti, N and Al precursors. AlTiN film growth was observed on SiO2/Si(100) with substrate temperatures between 200 and 400 °C. The Al content in the film is controlled by the ratio of partial pressures of the two precursors in the gas phase. The metal to C to N ratio is approximately constant at 1:1:1 for most conditions studied. The chemical states of Ti, C, and N in AlxTi1-xN and titanium-carbo-nitride (TiCN) films are identical, while the Al chemical state is nitride at low, but increasingly carbidic at high Al concentration. The initial growth rate on SiO2 was significantly suppressed by the presence of DMAH. At lower growth temperatures, the DMAH effect is more severe. Good step coverage was observed for AlxTi1-xN on 0.3 μm vias with a 3:1 aspect ratio.

Initial growth stages of CeO2 nanosystems by Plasma-Enhanced Chemical Vapor Deposition

2002 ◽  
Vol 756 ◽  
Author(s):  
Davide Barreca ◽  
Alberto Gasparotto ◽  
Eugenio Tondello ◽  
Stefano Polizzi ◽  
Alvise Benedetti ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Chemical Vapor ◽  
Precursor Film ◽  
Growth Stages ◽  
Initial Growth ◽  
X Ray ◽  
Synthesis Conditions

ABSTRACTNanocrystalline CeO2 thin films were synthesized by Plasma-Enhanced Chemical Vapor Deposition using Ce(dpm)4 as precursor. Film growth was accomplished at 150–300°C either in Ar or in Ar-O2 plasmas on SiO2 and Si(100) with the aim of studying the effects of substrate temperature and O2 content on coating characteristics. Film microstructure as a function of the synthesis conditions was investigated by Glancing Incidence X-Ray Diffraction (GIXRD) and Transmission Electron Microscopy (TEM), while surface morphology was analyzed by Atomic Force Microscopy (AFM). Surface and in-depth chemical composition was studied by X-ray Photoelectron Spectroscopy (XPS) and Secondary Ion Mass Spectrometry (SIMS).

Microcrystalline β-SiC Growth on Si by ECR-CVD at 500°C

1994 ◽  
Vol 358 ◽  
Author(s):  
Kuan-Lun Cheng ◽  
Chih-Chien Liu ◽  
Huang-Chung Cheng ◽  
Chiapyng Lee ◽  
Tri-Rung Yew
Keyword(s):  
Photoelectron Spectroscopy ◽  
Electron Cyclotron Resonance ◽  
Film Growth ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Flow Ratio ◽  
Contact Mode ◽  
Force Microscopy ◽  
The Fourier Transform ◽  
Optimum Flow

ABSTRACTMicrocrystalline β-SiC films were deposited on silicon substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) at 500°C utilizing a SiH4-CH4-H2 gas mixture. The effects of two important parameters on film growth, SiH4/CH4 flow ratio and microwave (MW) power, were investigated using X-ray photoelectron spectroscopy (XPS) along with the Fourier transform infrared spectra (FTIR). Results showed that the optimum flow ratio is about 0.5. Under the optimum flow ratio, a large MW power is favorable for the growth of high quality films with an ideal film stoichiometry. Surface morphology inspected by the contact mode atomic force microscopy (AFM) reveals that high MW powers not only improve the film crystallinity but also increase its surface roughness as well.

scholarly journals Area Selective Deposition of Metal Films Using Temperature Sensitive Masking Materials and Plasma Electrons as Reducing Agents

2021 ◽  
Author(s):  
Hama Nadhom ◽  
Yusheng Yuan ◽  
Polla Rouf ◽  
Niclas Solin ◽  
Henrik Pedersen
Keyword(s):  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Chemical Vapor ◽  
Metal Films ◽  
Reducing Agents ◽  
Film Deposition ◽  
Chemical Vapor Deposition Method ◽  
Temperature Sensitive ◽  
Film Material ◽  
Selective Deposition

<p>The potential of area selective deposition (ASD) with a newly developed chemical vapor deposition method, which utilize plasma electrons as reducing agents for deposition of metal films, is demonstrated using temperature sensitive polymer-based masking materials. The masking materials tested were polydimethylsiloxane (PDMS), polymethylmethacrylate (PMMA), polystyrene (PS), parafilm, Kapton tape, Scotch tape, and office paper. The masking materials where all shown to prevent film growth on the masked area of the substrate without being affected by the film deposition process. X-ray photoelectron spectroscopy analysis confirms that the film deposited consist mainly of metallic iron, whereas no film material is found on the masked areas after mask removal. SEM analysis of films deposited with non‑adhesive masking materials show that film growth extended for a small distance underneath the masking material, indicating that the CVD process with plasma electrons as a reducing agent is not a line-of-sight deposition technique. The reported methodology introduces an inexpensive and straightforward approach for ASD that opens for exciting new possibilities for robust and less complex area selective metal‑on‑metal deposition. </p>

Parallel Bias-Enhanced Sulfur-Assisted Chemical Vapor Deposition of Nanocrystalline Diamond Films

2003 ◽  
Vol 775 ◽  
Author(s):  
Joel De Jesùs ◽  
Juan A. Gonzàlez ◽  
Oscar O. Ortiz ◽  
Brad R. Weiner ◽  
Gerardo Morell
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Defect Density ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Nanocrystalline Diamond ◽  
X Ray ◽  
Positively Charged

AbstractThe transformations induced by the application of a continuous bias voltage parallel to the growing surface during the sulfur-assisted hot-filament chemical vapor deposition (HFCVD) of nanocrystalline diamond (n-D) films were investigated by Raman spectroscopy (RS), scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The films were deposited on molybdenum substrates using CH4, H2 and H2S. Bias voltages in the range of 0 – 800 VDC were applied parallel to the substrate surface continuously during deposition. The study revealed a significant improvement in the films' density and a lowering in the defect density of the nanocrystalline diamond structure for parallel bias (PB) voltages above 400V. These high PB conditions cause the preferential removal of electrons from the gaseous environment, thus leading to the net accumulation of positive species in the volume above the growing film, which enhances the secondary nucleation. The nanoscale carbon nuclei self-assemble into carbon nano-clusters with diameters in the range of tens of nanometers, which contain diamond (sp3-bonded C) in their cores and graphitic (sp2-bonded C) enclosures. Hence, the observed improvement in film density and in atomic arrangement appears to be connected to the enhanced presence of positively charged ionic species, consistent with models which propose that positively charged carbon species are the crucial precursors for CVD diamond film growth.

Low Pressure Mocvd Growth of InSb

1990 ◽  
Vol 216 ◽  
Author(s):  
B.T. Cunningham ◽  
R.P. Schneider ◽  
R.M. Biefeld
Keyword(s):  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Hole Mobility ◽  
Low Pressure ◽  
Lower Growth ◽  
Growth Pressure ◽  
Mocvd Growth ◽  
Partial Pressures ◽  
Low Pressure Mocvd ◽  
Sims Analysis

ABSTRACTLow pressure (200 Torr) metalorganic chemical vapor deposition (MOCVD) of InSb has been examined through variation of the Column III (TMIn) and Column V (TMSb or TESb) precursor partial pressures. The use of lower growth pressure significantly enhanced the range of allowable Column III and Column V partial pressures in which specular morphology InSb could be obtained without the formation of In droplets or Sb crystals. In addition, a 70% improvement in the average hole mobility was obtained, compared to InSb grown in the same reactor at atmospheric pressure. SIMS analysis revealed that Si at the substrate/epitaxial layer interface is an important impurity that may contribute to degradation of the mobility. Substitution of TESb for TMSb did not result in any improvement in the purity of the InSb.

Low Temperature Tungsten, Tungsten Carbide and Tantalum Carbide Film Growth

2000 ◽  
Vol 648 ◽  
Author(s):  
Y.-M. Sun ◽  
S.Y. Lee ◽  
E. R. Engbrecht ◽  
K. Pfeifer ◽  
S. Smith ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Chemical Vapor ◽  
Tantalum Carbide ◽  
Microscopy Imaging ◽  
Order Of Magnitude

Abstract:Low temperature chemical vapor deposition of tungsten, tungsten carbide and tantalum carbide films on SiO2/Si(100) surfaces was studied by X-ray photoelectron spectroscopy (XPS) and electron microscopy. Tungsten carbide films were deposited using the W(CO)6precursor with and without ethylene over temperatures ranging from 250 to 500 °C. The films grown without ethylene contained approximately 13 % carbon and 6 % oxygen. Cross section scanning electron microscopy imaging of the films grown at various temperatures without ethylene shows a polycrystalline microstructure, and the grain size increases dramatically as the growth temperature increases. Introducing ethylene increased carbon incorporation and changed the microstructure to amorphous-like. The tungsten to carbon ratio was approximately 2 at growth below 500 °C, and reached ~ 1.2 above 500 °C. The tantalum carbide films were deposited in a plasma enhanced chemical vapor deposition (PECVD) process using methane. The PECVD tantalum carbide films were conductive with a resistivity of ~1000 µΩ cm, which is about one order of magnitude lower than thermally grown films from pentakisdimethylamino tantalum.

scholarly journals Defect- and H-Free Stoichiometric Silicon Carbide by Thermal CVD from the Single Source Precursor Trisilacyclohexane

2022 ◽  
Vol 3 (1) ◽  
pp. 27-40
Author(s):  
Alain E. Kaloyeros ◽  
Jonathan Goff ◽  
Barry Arkles
Keyword(s):  
Silicon Carbide ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Reference Value ◽  
Chemical Vapor ◽  
Structural Defects ◽  
Single Source ◽  
High Temperature Electronics ◽  
Single Source Precursor ◽  
High Vapor

Stoichiometric silicon carbide (SiC) thin films were grown using thermal chemical vapor deposition (TCVD) from the single source precursor 1,3,5-trisilacyclohexane (TSCH) on c-Si (100) substrates within an optimized substrate temperature window ranging from 650 to 850 °C. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) analyses revealed that the as-deposited films consisted of a Si-C matrix with a Si:C ratio of ~1:1. FTIR and photoluminescence (PL) spectrometry studies showed that films deposited ≥ 750 °C were defect- and H-free within the detection limit of the techniques used, while ellipsometry measurements yielded an as-grown SiC average refractive index of ~2.7, consistent with the reference value for the 3C-SiC phase. The exceptional quality of the films appears sufficient to overcome limitations associated with structural defects ranging from failure in high voltage, high temperature electronics to 2-D film growth. TSCH, a liquid at room temperature with good structural stability during transport and handling as well as high vapor pressure (~10 torr at 25 °C), provides a viable single source precursor for the growth of stoichiometric SiC without the need for post-deposition thermal treatment.

X-ray photoelectron spectroscopy study on the chemistry involved in tin oxide film growth during chemical vapor deposition processes

2013 ◽  
Vol 31 (1) ◽  
pp. 01A105 ◽  
Author(s):  
Gilbère J. A. Mannie ◽  
Gijsbert Gerritsen ◽  
Hendrikus C. L. Abbenhuis ◽  
Joop van Deelen ◽  
J. W. (Hans) Niemantsverdriet ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Oxide Film ◽  
Tin Oxide ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Chemical Vapor ◽  
Spectroscopy Study ◽  
X Ray ◽  
Deposition Processes
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