New Approach to “High-Temperature” Quantum Switch and Quantum Field Effect Transistor

1998 ◽  
Vol 510 ◽  
Author(s):  
E.Z. Meilikhov ◽  
B.A. Aronzon ◽  
D.A. Bakaushiin ◽  
V.V. Ryl'kov ◽  
A.S. Vedeneev
Keyword(s):  
Ballistic Transport ◽  
Oxide Semiconductor ◽  
New Approach ◽  
Natural Properties ◽  
Small Quantum ◽  
Quantum Device ◽  
Wide Range ◽  
Bottle Neck ◽  
Effect Transistor ◽  
Nitride Oxide

AbstractWe report results of studying some natural properties of highly disordered mesoscopic systems which seem to be promising for elevating quantum device work temperatures up to 77-300 K. They are FET-type Si-MNOS (metal-nitride-oxide-semiconductor) structures with built-in charge concentrations being so high that the systems remain to be strongly disordered even at room temperature. Disorder of studied structures could be controlled by varying charged traps concentration at the SiO2-Si3N4 interface that induce strong potential fluctuations. Important feature of the structures is the possibility to vary the built-in charge over a wide range (up to 1013 CM−2) that results in varying the disorder range. The conductance of such a system is shown to be controlled by the single small quantum-sized region with a ballistic transport which is a saddle-point region of the fluctuation relief. Narrowness of that “bottle neck” (comparable with the electron wavelength) results in quantizing conductance of the structure, and if the disorder is high enough, the conductance for some gate voltages shows a real tendency to reach a plateau at the quantum value e2/h. What is important, that tendency occurs a∼t high temperatures (77-300 K).

Novel Advanced Analytical Design Tool for 4H-SiC VDMOSFET Devices

2017 ◽  
Vol 897 ◽  
pp. 529-532 ◽  
Author(s):  
Luigi di Benedetto ◽  
Gian Domenico Licciardo ◽  
Tobias Erlbacher ◽  
Anton J. Bauer ◽  
Alfredo Rubino
Keyword(s):  
Figure Of Merit ◽  
Gate Oxide ◽  
Design Tool ◽  
Oxide Semiconductor ◽  
Drift Region ◽  
Trade Off ◽  
Blocking Voltage ◽  
Wide Range ◽  
Source Voltage ◽  
Effect Transistor

An analytical tool to design 4H-SiC power vertical Double-diffused Metal-Oxide-Semiconductor Field-Effect-Transistor is proposed. The model optimizes, in terms of the doping concentration in the Drift–region, the trade–off between the ON–resistance, RON, and the maximum blocking voltage, VBL, that is the Drain-Source voltage for which the avalanche breakdown appears at the p+–well/n-DRIFT junction together with the breakdown of the Gate oxide. Finding such trade-off means to maximize, Figure-Of-Merit. Our results are based on a novel full–analytical model of the electric field in the Gate oxide, EOX, whose generality is ensured by the absence of fitting and empirical parameters. Model results are successfully compared with 2D–simulations covering a wide range of device performances.

scholarly journals Long Channel Carbon Nanotube as an Alternative to Nanoscale Silicon Channels in Scaled MOSFETs

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Michael Loong Peng Tan
Keyword(s):  
Carbon Nanotube ◽  
Electric Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Unit Area ◽  
Gain Control ◽  
Oxide Semiconductor ◽  
Wide Range ◽  
Effect Transistor ◽  
Long Channel

Long channel carbon nanotube transistor (CNT) can be used to overcome the high electric field effects in nanoscale length silicon channel. When maximum electric field is reduced, the gate of a field-effect transistor (FET) is able to gain control of the channel at varying drain bias. The device performance of a zigzag CNTFET with the same unit area as a nanoscale silicon metal-oxide semiconductor field-effect transistor (MOSFET) channel is assessed qualitatively. The drain characteristic of CNTFET and MOSFET device models as well as fabricated CNTFET device are explored over a wide range of drain and gate biases. The results obtained show that long channel nanotubes can significantly reduce the drain-induced barrier lowering (DIBL) effects in silicon MOSFET while sustaining the same unit area at higher current density.

scholarly journals Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 309
Author(s):  
Jie Gu ◽  
Qingzhu Zhang ◽  
Zhenhua Wu ◽  
Jiaxin Yao ◽  
Zhaohao Zhang ◽  
...  
Keyword(s):  
Quantum Interference ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Ballistic Transport ◽  
Oxide Semiconductor ◽  
Body Effect ◽  
Gate Control ◽  
Effect Transistor ◽  
P Type

A 16-nm-Lg p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band structure experimentally. In addition, the pronounced ballistic transport characteristics were demonstrated in the GAA Si NW MOSFET. Due to the existence of spacers for the typical MOSFET, the quantum interference was also successfully achieved at lower bias.

A new approach to gate/n− overlapped lightly doped drain structures: added gate after implantation of n− (AGAIN)

1991 ◽  
Vol 69 (3-4) ◽  
pp. 174-176 ◽  
Author(s):  
Ian W. Wylie ◽  
N. Garry Tarr
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Junction Depth ◽  
Transistor Structure ◽  
New Approach ◽  
Effect Transistor ◽  
Lightly Doped Drain

A new lightly doped drain (LDD) metal oxide semiconductor field effect transistor structure is presented that provides substantial overlap of the gate over the n− region independent of the n− junction depth. This structure uses polysilicon spacers to replace the oxide sidewall spacers used in a conventional LDD device. The structure has been given the acronym "AGAIN," for added gate after implantation of n−.

scholarly journals Аномальное поведение боковой C-V-характеристики МНОП-транзистора со встроенным локальным зарядом в нитридном слое

2019 ◽  
Vol 89 (7) ◽  
pp. 1067
Author(s):  
З.А. Атамуратова ◽  
А. Юсупов ◽  
Б.О. Халикбердиев ◽  
А.Э. Атамуратов
Keyword(s):  
Applied Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Charge Trapping ◽  
Oxide Semiconductor ◽  
Semiconductor Surface ◽  
Base Transition ◽  
Effect Transistor ◽  
Nitride Oxide

C-V dependence of lateral source-base transition of metal-nitride-oxide-semiconductor field effect transistor with localized nitride trapped charge is simulated. Localizing the charge induce anomalous jumping or recession of the capacitance at defined applied voltage. The change of capacitance is connected with redistribution of carriers at semiconductor surface induced by charge trapping. The anomalous behaviour of the capacitance can be used at detecting the localized charge trapped in the dielectric layer of field effect transistors.

Factors Affecting Molecular Self-Assembly and Its Mechanism

2012 ◽  
Vol 9 (1) ◽  
pp. 43 ◽  
Author(s):  
Hueyling Tan
Keyword(s):  
Self Assembly ◽  
Building Blocks ◽  
Molecular Engineering ◽  
Molecular Structures ◽  
Polymer Science ◽  
New Approach ◽  
Factors Affecting ◽  
Dna Structures ◽  
Self Assembling ◽  
Wide Range

Molecular self-assembly is ubiquitous in nature and has emerged as a new approach to produce new materials in chemistry, engineering, nanotechnology, polymer science and materials. Molecular self-assembly has been attracting increasing interest from the scientific community in recent years due to its importance in understanding biology and a variety of diseases at the molecular level. In the last few years, considerable advances have been made in the use ofpeptides as building blocks to produce biological materials for wide range of applications, including fabricating novel supra-molecular structures and scaffolding for tissue repair. The study ofbiological self-assembly systems represents a significant advancement in molecular engineering and is a rapidly growing scientific and engineering field that crosses the boundaries ofexisting disciplines. Many self-assembling systems are rangefrom bi- andtri-block copolymers to DNA structures as well as simple and complex proteins andpeptides. The ultimate goal is to harness molecular self-assembly such that design andcontrol ofbottom-up processes is achieved thereby enabling exploitation of structures developed at the meso- and macro-scopic scale for the purposes oflife and non-life science applications. Such aspirations can be achievedthrough understanding thefundamental principles behind the selforganisation and self-synthesis processes exhibited by biological systems.

Extraction of DNA from a Wide Range of Objects by Treatment with Ammonium Salts

2020 ◽  
Vol 36 (6) ◽  
pp. 98-106
Author(s):  
E.I. Levitin ◽  
B.V. Sviridov ◽  
O.V. Piksasova ◽  
T.E. Shustikova
Keyword(s):  
Dna Extraction ◽  
Dna Isolation ◽  
Tissue Samples ◽  
New Approach ◽  
Cell Wall Disruption ◽  
Wide Range ◽  
Low Salt ◽  
Mammalian Blood ◽  
Plasmid Extraction ◽  
Two Hybrid

Currently, simple, rapid, and efficient techniques for DNA isolation from a wide range of organisms are in demand in biotechnology and bioinformatics. A key (and often limiting) step is the cell wall disruption and subsequent DNA extraction from the disintegrated cells. We have developed a new approach to DNA isolation from organisms with robust cell walls. The protocol includes the following steps: treatment of cells or tissue samples with ammonium acetate followed by cell lysis in low-salt buffer with the addition of SDS. Further DNA extraction is carried out according to standard methods. This approach is efficient for high-molecular native DNA isolation from bacteria, ascomycetes, yeast, and mammalian blood; it is also useful for express analysis of environmental microbial isolates and for plasmid extraction for two-hybrid library screening. express method for DNA isolation; ammonium salt treatment (в русских ключевых такой порядок), osmotic breakage of cells This study was financially supported by the NRC "Kurchatov Institute"-GOSNIIGENETIKA Kurchatov Genomic Center.

scholarly journals Ab initio perspective of ultra-scaled CMOS from 2D-material fundamentals to dynamically doped transistors

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Aryan Afzalian
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Grand Challenge ◽  
Gate Length ◽  
Delay Performance ◽  
Effect Transistor

AbstractUsing accurate dissipative DFT-NEGF atomistic-simulation techniques within the Wannier-Function formalism, we give a fresh look at the possibility of sub-10-nm scaling for high-performance complementary metal oxide semiconductor (CMOS) applications. We show that a combination of good electrostatic control together with high mobility is paramount to meet the stringent roadmap targets. Such requirements typically play against each other at sub-10-nm gate length for MOS transistors made of conventional semiconductor materials like Si, Ge, or III–V and dimensional scaling is expected to end ~12 nm gate-length (pitch of 40 nm). We demonstrate that using alternative 2D channel materials, such as the less-explored HfS2 or ZrS2, high-drive current down to ~6 nm is, however, achievable. We also propose a dynamically doped field-effect transistor concept, that scales better than its MOSFET counterpart. Used in combination with a high-mobility material such as HfS2, it allows for keeping the stringent high-performance CMOS on current and competitive energy-delay performance, when scaling down to virtually 0 nm gate length using a single-gate architecture and an ultra-compact design (pitch of 22 nm). The dynamically doped field-effect transistor further addresses the grand-challenge of doping in ultra-scaled devices and 2D materials in particular.

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