Ion Beam Induced Metallorganic Chemical Vapor Deposition of Titanium Nitride Films as a Diffusion Barrier Between Cu and Si

ABSTRACTWe have deposited TiN films by using ion-beam-induced chemical-vapor-deposition (IBICVD). Tetrakis-dimethyl-amido-titanium (TDMAT) was used as a precursor. N2 and Ar gas were used to generate the plasma and the ions in the plasma were extracted by using two electrically isolated grids. The energy of ion beam was about 115–127 eV. The use of N-ion beam significantly lowers the resistivity and carbon content of TiN film (∼320 μΩ-cm, 15 at.%), compared with the thermally decomposed film (∼6000 μΩ-cm, 36 at.%). The use of Ar ion beam also considerably lowers the resistivity of films (∼800 μΩ-cm), but does not reduce the carbon content. The step coverage of the thermally-decomposed film was about 70 %, while the step coverages of the films deposited using N2 and Ar ion beams were about 0 and 30 %, respectively, in 0.5 μm x 1.5 μm contacts. The etch-pit test showed that 50-nm-thick films deposited by using N2 and Ar ion beams prevent the diffusion of Cu into the Si substrate up to annealings at 550 °C and 600 °C for 1 hour, while the thermally decomposed film fails at 500 °C.

Download Full-text

Chemical vapor deposition of titanium nitride thin films from tetrakis(dimethylamido)titanium and hydrazine as a coreactant

Journal of Materials Research ◽

10.1557/jmr.2000.0347 ◽

2000 ◽

Vol 15 (11) ◽

pp. 2414-2424 ◽

Cited By ~ 5

Author(s):

Carmela Amato-Wierda ◽

Derk A. Wierda

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Low Temperature ◽

Growth Rates ◽

Vapor Deposition ◽

Film Growth ◽

Chemical Vapor ◽

Air Exposure ◽

Tin Films ◽

Tin Film

Hydrazine was used as a coreactant with tetrakis(dimethylamido)titanium for the low-temperature chemical vapor deposition of TiN between 50 and 200 °C. The TiN film-growth rates ranged from 5 to 45 nm/min. Ti:N ratios of approximately 1:1 were achieved. The films contain between 2 and 25 at.% carbon, as well as up to 36 at.% oxygen resulting from diffusion after air exposure. The resistivity of these films is approximately 104 μΩ cm. Annealing the films in ammonia enhances their crystallinity. The best TiN films were produced at 200 °C from a 2.7% hydrazine–ammonia mixture. The Ti:N ratio of these films is approximately 1:1, and they contain no carbon or oxygen. These films exhibit the highest growth rates observed.

Download Full-text

TiN Diffusion Barrier Formation by Pulsed Source Chemical Vapor Deposition method

MRS Proceedings ◽

10.1557/proc-514-407 ◽

1998 ◽

Vol 514 ◽

Author(s):

Hyeongtag Jeon ◽

Sangsoo Lee ◽

Taehang Ahn ◽

Jangwoong Uhm

Keyword(s):

Chemical Vapor Deposition ◽

Film Thickness ◽

Diffusion Barrier ◽

Vapor Deposition ◽

Chemical Vapor ◽

Reaction Chamber ◽

Pulse Time ◽

Cvd Method ◽

Tin Film ◽

Ar Gas

ABSTRACTTiN film is applied as a diffusion barrier and an adhesion promotion layer in the ultralarge scale integrated circuit (ULSI) devices. These TiN thin films are usually deposited by sputtering and chemical vapor deposition (CVD) methods. The CVD method is now studied intensively due to its satisfiable step coverage and compatibility with current device fabrication process. There are several different CVD methods already proposed such as LPCVD, MOCVD and PECVD. These proposed CVD methods have many disadvantages such as impurity incorporation and particle generation due to gas phase reactions between source and reactant gases. To solve these problems, we propose a new CVD method to reduce impurities and particles which is the pulsed source chemical vapor deposition (PS-CVD) method. In this method, the source, reactant and purge gases are introduced into reaction chamber, separately. TiN films are deposited using TiCl4, NH3 and Ar by alternately introducing into reaction chamber. In detail, TiCl4 source is introduced and adsorbed on Si substrate and then Ar gas purges this source gas. Continuously, NH3 gas in supplied into reaction chamber and adsorbed on the Ti-adsorbed Si substrate and then Ar gas is again introduced to purge NH3 gas. These four steps are one cycle. The main variables in this experiment are source pulse time, source purge time, reactant pulse time, reactant purge time, and so on. The deposition characteristics are also different depending on substrate temperatures. Above the thermal decomposition temperatures, the film thickness is a function of the source pulse time like conventional CVD. Below the thermal decomposition temperatures, the film thickness is saturated and exhibits a constant value in this temperature range. The TiN film thickness depends only on the number of deposition cycle. The process window were determined by experimentally in this temperature range. Process variables were established, and then TiN films were deposited. The characteristics of this TiN diffusion barrier were analyzed. The surface microroughness, the chemical composition and contaminant contents were measured by AFM, SEM and AES. A crystal structure and the phase identification were performed with using XRD and the sheet resistance was measured by a four point probe. These results will be discussed and compared with the results of TiN formed by sputtered and conventional CVD methods.

Download Full-text

Mechanical Properties of the Carbonaceous Films Formed by Focused Ion-beam-assisted Chemical Vapor Deposition

IEEJ Transactions on Fundamentals and Materials ◽

10.1541/ieejfms.130.949 ◽

2010 ◽

Vol 130 (10) ◽

pp. 949-954

Author(s):

Junichi Yanagisawa

Keyword(s):

Mechanical Properties ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Focused Ion Beam ◽

Ion Beam ◽

Chemical Vapor

Download Full-text

Transmission Electron Microscopy (TEM) Specimen Preparation Technique using Focused Ion Beam (FIB): Application to Material Characterization of Chemical Vapor Deposition of Tungsten (W) and Tungsten Silicides (WSix)

ISTFA 1997: Conference Proceedings from the 23rd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa1997p0237 ◽

1997 ◽

Author(s):

K. Doong ◽

J.-M. Fu ◽

Y.-C. Huang

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Focused Ion Beam ◽

Ion Beam ◽

Chemical Vapor ◽

Specimen Preparation ◽

Preparation Technique ◽

Transmission Electron

Abstract The specimen preparation technique using focused ion beam (FIB) to generate cross-sectional transmission electron microscopy (XTEM) samples of chemical vapor deposition (CVD) of Tungsten-plug (W-plug) and Tungsten Silicides (WSix) was studied. Using the combination method including two axes tilting[l], gas enhanced focused ion beam milling[2] and sacrificial metal coating on both sides of electron transmission membrane[3], it was possible to prepare a sample with minimal thickness (less than 1000 A) to get high spatial resolution in TEM observation. Based on this novel thinning technique, some applications such as XTEM observation of W-plug with different aspect ratio (I - 6), and the grain structure of CVD W-plug and CVD WSix were done. Also the problems and artifacts of XTEM sample preparation of high Z-factor material such as CVD W-plug and CVD WSix were given and the ways to avoid or minimize them were suggested.

Download Full-text