Grain Growth by Digm in Ni Thin Film Under High Tensile Stress

1998 ◽  
Vol 516 ◽  
Author(s):  
Zhengyi Jia ◽  
G. Z. Pan ◽  
K. N. Tu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Tensile Stress ◽  
Grain Growth ◽  
Experimental Result ◽  
Calculated Stress

AbstractElectron beam evaporated Ni thin films are found to have tensile stress of 1.2 Gpa. The stress is relieved upon heating, accompanied by grain growth. The calculated stress matches the experimental result and a mechanism of grain growth is proposed.

The Ferroelectric and Electrical Properties of CaBi4Ti4O15 Thin Films Prepared by Sol-Gel Technology

2011 ◽  
Vol 239-242 ◽  
pp. 891-894 ◽  
Author(s):  
Tsung Fu Chien ◽  
Jen Hwan Tsai ◽  
Kai Huang Chen ◽  
Chien Min Cheng ◽  
Chia Lin Wu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
Morphological Characterization ◽  
Experimental Result ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Capacitance Voltage ◽  
Preferential Crystal Orientation

In this study, thin films of CaBi4Ti4O15with preferential crystal orientation were prepared by the chemical solution deposition (CSD) technique on a SiO2/Si substrate. The films consisted of a crystalline phase of bismuth-layer-structured dielectric. The as-deposited CaBi4Ti4O15thin films were crystallized in a conventional furnace annealing (RTA) under the temperature of 700 to 800°C for 1min. Structural and morphological characterization of the CBT thin films were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM). The impedance analyzer HP4294A and HP4156C semiconductor parameters analyzer were used to measurement capacitance voltage (C-V) characteristics and leakage current density of electric field (J-E) characteristics by metal-ferroelectric-insulator- semiconductor (MFIS) structure. By the experimental result the CBT thin film in electrical field 20V, annealing temperature in 750°C the CBT thin film leaks the electric current is 1.88x10-7A/cm2and the memory window is 1.2V. In addition, we found the strongest (119) peak of as-deposited thin films as the annealed temperature of 750°C

Ionic Conduction Response under Extending-Deformation of β-AgI Thin Films

2018 ◽  
Vol 790 ◽  
pp. 3-8 ◽  
Author(s):  
Shin Ichi Furusawa ◽  
Tomosato Ida
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Ionic Conductivity ◽  
Tensile Stress ◽  
Polyethylene Terephthalate ◽  
Ionic Conduction ◽  
Ion Conduction ◽  
Polyethylene Terephthalate Film ◽  
Extension Ratio

Tensile stress was applied to β-AgI thin film prepared on a polyethylene terephthalate film, and the ion conduction response in the direction of the tensile extension was investigated. The ionic conductivity of the β-AgI thin film decreases and the activation energy for ionic conduction increases with increasing extension ratio. This behaviour is attributed to the modulation of the crystal framework by the extension of the AgI thin film.

Fabrication of a Peltier Device Based on InSb and SbTe Thin Films

2011 ◽  
Vol 254 ◽  
pp. 50-53 ◽  
Author(s):  
Tatsuya Ishii ◽  
Hideyuki Homma ◽  
Shigeo Yamaguchi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Vapor Phase ◽  
Electron Beam Evaporation ◽  
Peltier Effect ◽  
Insb Thin Films ◽  
Peltier Device ◽  
P Type ◽  
Direct Current Sputtering

We fabricated a thin film Peltier device based on an InSb film and a SbTe film. N-type InSb thin films were grown on sapphire (0001) substrate with InAsSb buffer layer by metalorganic vapor phase epitaxy, and P-type SbTe thin films were deposited on the substrate by electron beam evaporation. N-type and P-type films were separated on the substrate, and between them, a Au thin film was deposited by direct-current sputtering. We observed partial Peltier effect in the device.

Physical property exploration of highly oriented V2O5 thin films prepared by electron beam evaporation

2015 ◽  
Vol 39 (12) ◽  
pp. 9471-9479 ◽  
Author(s):  
Shrividhya Thiagarajan ◽  
Mahalingam Thaiyan ◽  
Ravi Ganesan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Single Phase ◽  
Physical Property ◽  
Electron Beam Evaporation ◽  
V2o5 Thin Films ◽  
Thin Film Nanostructures

Highly crystalline α-V2O5 thin film nanostructures with a single phase exhibiting higher mobility were prepared by the EB-PVD technique.

Influence of Stoichiometric Variations and Rapid Thermal Processing of β-FESI2 thin Films on their Electrical and Microstructural Properties

1995 ◽  
Vol 402 ◽  
Author(s):  
M. Döscher ◽  
B. Selle ◽  
M. Pauli ◽  
F. Kothe ◽  
J. Szymanski ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Rf Sputtering ◽  
Deposition Process ◽  
Silicon Substrates ◽  
Phonon Spectra ◽  
First Results

AbstractAmorphous irondisilicide thin films were deposited on silicon substrates in a RF sputtering process, followed by rapid thermal crystallization by means of moving the thin film beneath a line-shaped electron beam to form β-FeSi2. Depending on the deposition process parameters, films of a different stoichiometry can be produced. The deviations from the 1:2 stoichiometry, which have been determined by Rutherford Backscattering (RBS), are related to changes in the microstructure (studied by microscopic methods like TEM and AFM), the infrared phonon spectra (measured by FTIR spectroscopy) and the electrical properties of the crystallized films. The microstructure of the iron disilicide thin films is improved when the composition significantly deviates from 2.0, probably due to silicon interstitials in the silicide thin film. Films of different stoichiometry result in p- or n-type thin films with carrier densities below 5×1018cm−3 and hall mobilities up to 180cm 2/Vs. First results show that not only β-FeSi2-siliconheterojunctions as reported before but also pn-β-FeSi2-homojunctions show rectifying behavior. Rapid thermal processing with the line electron beam leads to a further improvement of the film quality when the scan velocity is increased up to the order of several cm/s.

TiNi/GaAs Thin Film Structures for Gate Metallizations

2000 ◽  
Vol 648 ◽  
Author(s):  
Chichang Zhang ◽  
Aris Christou
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Sheet Resistance ◽  
Intermetallic Phase ◽  
Intermetallic Phases ◽  
Schottky Barriers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Alloy Tini

AbstractShape memory alloy TiNi thin films on GaAs have been investigated. A series of TiNi compositions were electron beam deposited on GaAs initially as thin multilayers of Ti and Ni. The intermetallic phase of TiNi was formed by annealing and complete intermixing of the multilayers at 370oC. The intermetallic phases were investigated with X-ray diffraction techniques. The annealing kinetics and resistivity investigations were carried out in order to minimize the sheet resistance of the intermetallic phase. TiNi Schottky barriers on GaAs have been fabricated and their performance will be reported. Additional investigations on surface morphology using the energy dispersive spectroscopy as well as TEM investigations show the correlation between microstructure, intermetallic phase formation and sheet resistance.

Fabrication of oxide superconductors from multilayered metallic thin films

1987 ◽  
Vol 2 (6) ◽  
pp. 726-731 ◽  
Author(s):  
M. Nastasi ◽  
P. N. Arendt ◽  
R. Tesmer ◽  
C. J. Maggiore ◽  
R. C. Cordi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Thermal Reaction ◽  
Superconducting Phase ◽  
Heat Of Mixing ◽  
Oxide Superconductors ◽  
Second Phase ◽  
Metallic Thin Films ◽  
Superconducting Transition

Thin-film GdBa2Cu3Ox superconductors with an onset Tc > 90 K have been produced. The films were fabricated by thermal reaction in an oxidizing atmosphere of electron-beam deposited Ba/Gd/Cu multilayers. Attempts to produce the superconducting phase YBa2Cu3Ox by multilayer reaction were unsuccessful due to a positive heat of mixing between Y and Ba. The appearance of a wide superconducting transition in GdBa2Cu3Ox films may be the result of tunneling through a nonsuperconducting second phase.

Atmospheric Stability of E-Beam Deposited Optical Thin Film Stacks

2004 ◽  
Vol 854 ◽  
Author(s):  
Ping Hou ◽  
Lianchao Sun ◽  
Fei Luo
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Electron Beam ◽  
Ambient Temperature ◽  
Ion Beam ◽  
Atmospheric Stability ◽  
Optical Devices ◽  
Atmospheric Environment ◽  
Profile Changes

ABSTRACTOptical thin films with SiO2-TiO2 stack were prepared by the technology of electron beam (e-beam) evaporation with ion beam assistant deposition (IBAD). The mechanical (stress) and optical properties of as-deposited thin films were studied as a function of exposure time in the atmospheric environment. Exposing to the air at the ambient temperature causes incremental compressive stress and spectrum profile changes, which is related to the absorption of water moisture into the films. Making a dense film is, therefore, a practical approach to improve structural stability of thin films and then the performance of optical devices.

The Instability of Polycrystalline Thin Films: Experiment and Theory

1988 ◽  
Vol 121 ◽  
Author(s):  
K. T. Miller ◽  
F. F. Lange ◽  
D. B. Marshall
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Free Energy ◽  
Grain Growth ◽  
Spin Coating ◽  
Polycrystalline Thin Film ◽  
Film Stability ◽  
Zirconium Acetate ◽  
Polycrystalline Thin Films ◽  
Thin Film Stability

ABSTRACTDense polycrystalline thin films of ZrO2 (3 and 8 mol% Y2O3) were produced by the pyrolysis of zirconium acetate precursor films, which were deposited on single crystal Al2O3 substrates by spin-coating solutions of zirconium acetate. With grain growth, these films broke into islands of ZrO2 grains. Thermodynamic calculations show that this break up lowers the free energy of the system. These calculations also predict the conditions needed for polycrystalline thin film stability.

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