Electrical Characterization of a Double Barrier Direct Tunneling Diode Structure

1999 ◽  
Vol 567 ◽  
Author(s):  
E. M. Dons ◽  
C. S. Skowronski ◽  
K. R. Farmer
Keyword(s):  
Nonvolatile Memory ◽  
Electrical Characterization ◽  
Diode Structure ◽  
Electrical Measurements ◽  
Si Substrates ◽  
Direct Tunneling ◽  
Tunneling Diode ◽  
Nonvolatile Memory Devices ◽  
Interface Potential

ABSTRACTWe report the electrical characterization of a direct tunneling diode structure that incorporates a multilayer dielectric. The dielectric consists of a stack of two thermally grown, ultrathin SiO2 layers, each ∼3.5 rin thick, separated by a deposited, continuous, undoped, ultrathin nanocrystalline Si layer ∼5.0 nm thick. Electrical measurements of this structure are reported for both n-type and p-type Si substrates. We find that the room temperature transport through this structure is accounted for by describing the intermediate Si layer as a quantum well with a continuum of states, and by otherwise assuming bulk properties for the ultrathin layers, such as the existence of a bandgap in the Si well and the usual Si-SiO2 interface potential barrier height at all interfaces. This structure is expected to be useful as the active dielectric in nonvolatile memory devices.

Process and Simulation of TiSi2/n+/p Silicon Shallow Junctions

1991 ◽  
Vol 235 ◽  
Author(s):  
Ying Wu ◽  
W. Savin ◽  
T. Fink ◽  
N. M. Ravindra ◽  
R. T. Lareau ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Furnace Annealing ◽  
Si Substrates ◽  
Conventional Furnace ◽  
Mass Spec ◽  
Current Voltage ◽  
Shallow Junctions ◽  
Current Voltage Characteristics ◽  
Secondary Ion

ABSTRACTExperimental analysis and simulation of the formation and electrical characterization of TiSi2/+/p-Si shallow junctions are presented here. The formation of shallow n+-p junction, by ion implantation of As through Ti films evaporated on p-Si substrates followed by Rapid Thermal Annealing (RTA) and conventional furnace annealing has been performed in these experiments. Structural techniques such as Secondary Ion Mass Spec-troscopy (SIMS) and Rutherford Backscattering (RBS) experiments have been employed to characterize these devices. RUMP simulations were used to analyze and interpret the RBS data. Current-voltage characteristics have been simulated using PISCES simulator.

Fabrication and Electrical Characterization of Heterojunction Mn-Doped GaN Nanowire Diodes on n-Si Substrates (GaN:Mn NW/n-Si)

2009 ◽  
Vol 38 (4) ◽  
pp. 505-510 ◽  
Author(s):  
Tae-Hong Kim ◽  
Chan-Oh Jang ◽  
Han-Kyu Seong ◽  
Heon-Jin Choi ◽  
Sang-Kwon Lee
Keyword(s):  
Electrical Characterization ◽  
Si Substrates ◽  
Gan Nanowire ◽  
Mn Doped

Structural and Electrical Characterization of a Block Copolymer-Based Unipolar Nonvolatile Memory Device

2011 ◽  
Vol 24 (3) ◽  
pp. 385-390 ◽  
Author(s):  
Nam-Goo Kang ◽  
Byungjin Cho ◽  
Beom-Goo Kang ◽  
Sunghoon Song ◽  
Takhee Lee ◽  
...  
Keyword(s):  
Block Copolymer ◽  
Nonvolatile Memory ◽  
Electrical Characterization ◽  
Memory Device ◽  
Nonvolatile Memory Device

scholarly journals Structural Characterization of Movpe Grown Algan/Gan for Hemt Formation

2018 ◽  
Vol 57 (1) ◽  
pp. 72-81 ◽  
Author(s):  
V.N. Popok ◽  
T.S. Aunsborg ◽  
R.H. Godiksen ◽  
P.K. Kristensen ◽  
R.R. Juluri ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Charge Carrier Concentration ◽  
Electrical Performance ◽  
Clear Understanding ◽  
Si Substrates ◽  
Transfer Of Technology ◽  
Dislocation Densities ◽  
Unusual Phenomenon ◽  
Aln Buffer

Abstract Results on structural, compositional, optical and electrical characterization of MOVPE grown AlGaN/GaN heterostructures with focus on understanding how the AlN buffer synthesis affects the top films are reported. The study demonstrates very good correlation between different methods providing a platform for reliable estimation of crystalline quality of the AlGaN/GaN structures and related to that electrical performance which is found to be significantly affected by threading dislocations (TD): higher TD density reduces the electron mobility while the charge carrier concentration is found to be largely unchanged. The attempt to vary the ammonia flow during the AlN synthesis is found not to affect the film composition and dislocation densities in the following heterostructures. An unusual phenomenon of considerable diffusion of Ga from the GaN film into the AlN buffer is found in all samples under the study. The obtained results are an important step in optimization of AlGaN/GaN growth towards the formation of good quality HEMT structures on sapphire and transfer of technology to Si substrates by providing clear understanding of the role of synthesis parameter on structure and composition of the films.

Some Observations on the Electrical Characterization of the Heteroepitaxially Grown Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
B. Molnar ◽  
G. Kelner
Keyword(s):  
Activation Energy ◽  
Secondary Ion Mass Spectrometry ◽  
Nitrogen Concentration ◽  
Electrical Characterization ◽  
Impurity Band ◽  
Thin Layers ◽  
Si Substrates ◽  
Nitrogen Concentrations ◽  
Band Conduction

ABSTRACTThis paper re-examines the electrical characterization of thin layers of cubic SiC, grown on (100) Si substrates. The resistivity and Hall coefficient for undoped SiC layers were measured between 10 K and 500 K. Electron spin resonance (ESR) and secondary ion mass spectrometry (SIMS) were used to identify and determine the nitrogen concentrations, which were higher than 1017/cm3. In all the samples examined the Hall measurements indicated impurity band conduction. Therefore, the temperature dependence of the resistivity has been used to derive an activation energy el. The value of el found to be in the range of 0.032–0.025 eV. The observed decrease in activation energy has been correlated with an increase in nitrogen concentration. The presence of substantial nitrogen leads to impurity band conduction and it is the most likely reason for the conflicting values reported for the dominant donor ionization energy by Hall and PL measurements.

scholarly journals Individualization and Electrical Characterization of SiGe Nanowires

2012 ◽  
Vol 1408 ◽  
Author(s):  
M. Monasterio ◽  
A. Rodríguez ◽  
T. Rodríguez ◽  
C. Ballesteros
Keyword(s):  
Electrical Characterization ◽  
Ex Situ ◽  
Electrical Measurements ◽  
Measured Resistance ◽  
Single Nanowires ◽  
Very High

ABSTRACTSiGe nanowires of different Ge atomic fractions up to 15% were grown and ex-situ n-type doped by diffusion from a solid source in contact with the sample. The phenomenon of dielectrophoresis was used to locate single nanowires between pairs of electrodes in order to carry out electrical measurements. The measured resistance of the as-grown nanowires is very high, but it decreases more than three orders of magnitude upon doping, indicating that the doping procedure used has been effective.

Electrical characterization of CdZnTe/Si diode structure

2020 ◽  
Vol 126 (8) ◽  
Author(s):  
C. Dogru Balbasi ◽  
M. Terlemezoglu ◽  
H. H. Gullu ◽  
D. E. Yildiz ◽  
M. Parlak
Keyword(s):  
Electrical Characterization ◽  
Diode Structure

Advanced Electrical Characterization of 90 nm Soft Bit Failure by Nano Probing Technique

2005 ◽  
Author(s):  
Christelle Giret ◽  
Damien Faure
Keyword(s):  
Failure Analysis ◽  
Electrical Characterization ◽  
Physical Analysis ◽  
Electrical Measurements ◽  
Device Failure ◽  
Sram Cell ◽  
Visual Defects ◽  
Difficult Challenge ◽  
Type Of Failure

Abstract The Soft Bit failure (Single Bit Failure sensitive to voltage) of a 90nm SRAM cell presented a difficult challenge for the Failure Analysis (FA) group. Physical analysis of these Soft SRAM failures did not show any visual defects; therefore the FA required an accurate electrical characterization. The transistor characteristics of the failing SRAM transistors are needed in order to speculate on the possible failure mechanism. The Nano-Probing technique performed at Nice Device Failure Analysis of Laboratory (NDAL) allowed us to identify anomalies of I/V characteristics like Vt imbalance, low Gain, asymmetrical Vt, ID (Drive current) and Ron. Case studies of an asymmetry phenomenon reported here lead to a correlation between the failure mode and the electrical measurements. This paper demonstrates a suitable electrical methodology and characterization by Nano-Probing in order to successfully manage a FA approach on this type of failure.

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