Defect States Due to Silicon Dangling Bonds at the Si(100)/SiO2 Interface and the Passivation by Hydrogen Atoms

1999 ◽  
Vol 592 ◽  
Author(s):  
C. Kaneta ◽  
T. Yamasaki ◽  
T. Uchiyama ◽  
T. Uda ◽  
K. Terakura
Keyword(s):  
Band Gap ◽  
Density Functional ◽  
Interface States ◽  
The Other ◽  
Dangling Bond ◽  
Dangling Bonds ◽  
Defect States ◽  
Hydrogen Atoms ◽  
The Density Functional Theory ◽  
Upper Level

ABSTRACTThe defect states due to the Si dangling-bonds at the Si(100)/SiO2 interface is investigated by employing the first-principles method based on the density functional theory. Two prototypes of the defects at the interface are considered. One exists on one end of a Si-Si dimer. On the other hand, the other exists on an edge of a Si-O-Si bridge. The electronic structures for these systems were calculated to investigate the interface states. For the former, two defect states strongly localizing on the silicon dangling bond at the interface appear in the band gap. The latter defect also generates two defect states. But the upper level is in the conduction band, while the lower level is in the band gap. It is also shown that the interface states completely disappear by introducing a H atom into the interface and terminating the dangling bonds. Our results suggest the silicon dangling-bond on a Si-Si dimer with no adjacent O atoms as a candidate for the Pb1 center.

scholarly journals A First-Principles Study of Hydrogen Desorption from High Entropy Alloy TiZrVMoNb Hydride Surface

Metals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 553
Author(s):  
Jinjing Zhang ◽  
Jutao Hu ◽  
Haiyan Xiao ◽  
Huahai Shen ◽  
Lei Xie ◽  
...  
Keyword(s):  
Density Functional ◽  
Underlying Mechanism ◽  
Hydrogen Desorption ◽  
High Entropy Alloy ◽  
Hydrogen Atoms ◽  
Desorption Process ◽  
High Entropy ◽  
The Density Functional Theory ◽  
Hydride Hydrogen ◽  
Atomic States

The desorption behaviors of hydrogen from high entropy alloy TiZrVMoNb hydride surface have been investigated using the density functional theory. The (110) surface has been determined to be the most preferable surface for hydrogen desorption from TiZrVMoNb hydride. Due to the high lattice distortion and heterogeneous chemical environment in HEA hydride, hydrogen desorption from the HEA hydride surface is found to be complex. A comparison of molecular and atomic hydrogen desorption reveals that hydrogen prefers to desorb in atomic states from TiZrVMoNb hydride (110) surface rather than molecular states during the hydrogen desorption process. To combine as H2 molecules, the hydrogen atoms need to overcome attractive interaction from TiZrVMoNb hydride (110) surface. These results suggest that the hydrogen desorption on TiZrVMoNb hydride (110) surface is a chemical process. The presented results provide fundamental insights into the underlying mechanism for hydrogen desorption from HEA hydride surface and may open up more possibilities for designing HEAs with excellent hydrogen desorption ability.

A New Approach for Calculating the Band Gap of Semiconductors within the Density Functional Method

2015 ◽  
Vol 242 ◽  
pp. 434-439 ◽  
Author(s):  
Vasilii E. Gusakov
Keyword(s):  
Density Functional Theory ◽  
Band Gap ◽  
Density Functional ◽  
Density Functional Method ◽  
Functional Method ◽  
Localized States ◽  
Experimental Accuracy ◽  
Functional Theory ◽  
New Approach ◽  
The Density Functional Theory

Within the framework of the density functional theory, the method was developed to calculate the band gap of semiconductors. We have evaluated the band gap for a number of monoatomic and diatomic semiconductors (Sn, Ge, Si, SiC, GaN, C, BN, AlN). The method gives the band gap of almost experimental accuracy. An important point is the fact that the developed method can be used to calculate both localized states (energy deep levels of defects in crystal), and electronic properties of nanostructures.

scholarly journals Dumbbell configuration of silicon adatom defects on silicene nanoribbons

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Huynh Anh Huy ◽  
Quoc Duy Ho ◽  
Truong Quoc Tuan ◽  
Ong Kim Le ◽  
Nguyen Le Hoai Phuong
Keyword(s):  
Magnetic Properties ◽  
Band Gap ◽  
Density Functional ◽  
Spin Moment ◽  
Hydrogen Atoms ◽  
Functional Theory ◽  
Electronic And Magnetic Properties ◽  
Spin Degeneracy ◽  
Silicene Nanoribbons ◽  
Formation Energies

AbstractUsing density functional theory (DFT), we performed theoretical investigation on structural, energetic, electronic, and magnetic properties of pure armchair silicene nanoribbons with edges terminated with hydrogen atoms (ASiNRs:H), and the absorptions of silicon (Si) atom(s) on the top of ASiNRs:H. The calculated results show that Si atoms prefer to adsorb on the top site of ASiNRs:H and form the single- and/or di-adatom defects depending on the numbers. Si absorption defect(s) change electronic and magnetic properties of ASiNRs:H. Depending on the adsorption site the band gap of ASiNRs:H can be larger or smaller. The largest band gap of 1 Si atom adsorption is 0.64 eV at site 3, the adsorption of 2 Si atoms has the largest band gap of 0.44 eV at site 1-D, while the adsorption at sites5 and 1-E turn into metallic. The formation energies of Si adsorption show that adatom defects in ASiNRs:H are more preferable than pure ASiNRs:H with silicon atom(s). 1 Si adsorption prefers to be added on the top site of a Si atom and form a single-adatom defect, while Si di-adatom defect has lower formation energy than the single-adatom and the most energetically favorable adsorption is at site 1-F. Si adsorption atoms break spin-degeneracy of ASiNRs:H lead to di-adatom defect at site 1-G has the highest spin moment. Our results suggest new ways to engineer the band gap and magnetic properties silicene materials.

scholarly journals Defects in SiC for Quantum Computing

MRS Advances ◽  
2019 ◽  
Vol 4 (40) ◽  
pp. 2217-2222
Author(s):  
Renu Choudhary ◽  
Rana Biswas ◽  
Bicai Pan ◽  
Durga Paudyal
Keyword(s):  
Band Gap ◽  
Valence Band ◽  
Density Functional ◽  
Single Photon ◽  
Band Edge ◽  
Valence Band Edge ◽  
Dangling Bonds ◽  
Defect Levels ◽  
Formation Energies ◽  
Qubit Operation

AbstractMany novel materials are being actively considered for quantum information science and for realizing high-performance qubit operation at room temperature. It is known that deep defects in wide-band gap semiconductors can have spin states and long coherence times suitable for qubit operation. We theoretically investigate from ab-initio density functional theory (DFT) that the defect states in the hexagonal silicon carbide (4H-SiC) are potential qubit materials. The DFT supercell calculations were performed with the local-orbital and pseudopotential methods including hybrid exchange-correlation functionals. Di-vacancies in SiC supercells yielded defect levels in the gap consisting of closely spaced doublet just above the valence band edge, and higher levels in the band gap. The divacancy with a spin state of 1 is charge neutral. The divacancy is characterized by C-dangling bonds and a Si-dangling bonds. Jahn-teller distortions and formation energies as a function of the Fermi level and single photon interactions with these defect levels will be discussed. In contrast, the anti-site defects where C, Si are interchanged have high formation energies of 5.4 eV and have just a single shallow defect level close to the valence band edge, with no spin. We will compare results including the defect levels from both the electronic structure approaches.

Sensitization of the Holes Lifetime by the Addition of Dangling Bonds in a-Si:H

2001 ◽  
Vol 664 ◽  
Author(s):  
L.F. Fonseca ◽  
S. Z. Weisz ◽  
I. Balberg
Keyword(s):  
Valence Band ◽  
Important Implication ◽  
Dangling Bond ◽  
Dangling Bonds ◽  
Defect States ◽  
Band Tail ◽  
Present Understanding

ABSTRACTThis paper is concerned with the phenomenon of the increase of the holes lifetime with the increase of the dangling bond concentration in a-Si:H. This rather surprising phenomenon that was observed, but not discussed, previously is shown to be a non-trivial effect which is based on the charged nature of the dangling bonds and a special scenario of the concentrations of the various defect states in the material. The most important implication of our study is that the charged dangling bonds can sensitize the valence band tail states, in contrast with the accepted roles of these types of states. The present understanding suggests that many new interesting phototransport phenomena can be found in a-Si:H.

Graphene-Based Sensors for Monitoring Strain

2013 ◽  
Vol 3 (1) ◽  
pp. 74-83
Author(s):  
M. Mirnezhad ◽  
R. Ansari ◽  
H. Rouhi ◽  
M. Faghihnasiri
Keyword(s):  
Fermi Level ◽  
Band Gap ◽  
Strain Distribution ◽  
Density Functional ◽  
Tight Binding ◽  
Density Functional Theory Calculations ◽  
Generalized Gradient ◽  
Functional Theory ◽  
The Density Functional Theory ◽  
Gap Opening

The application of graphene as a nanosensor in measuring strain through its band structure around the Fermi level is investigated in this paper. The mechanical properties of graphene as well as its electronic structure are determined by using the density functional theory calculations within the framework of generalized gradient approximation. In the case of electronic properties, the simulations are applied for symmetrical and asymmetrical strain distributions in elastic range; also the tight-binding approach is implemented to verify the results. It is indicated that the energy band gap does not change with the symmetrical strain distribution but depend on the asymmetric strain distribution, increasing strain leads to band gap opening around the Fermi level.

Electronic Band Structure of Cubic Silicon Carbide Nanowires

2008 ◽  
Vol 600-603 ◽  
pp. 575-578 ◽  
Author(s):  
A. Miranda ◽  
A. Estrella Ramos ◽  
M. Cruz Irisson
Keyword(s):  
Silicon Carbide ◽  
Band Structure ◽  
Band Gap ◽  
Density Functional ◽  
Electronic Band Structure ◽  
Local Density ◽  
Thickness Variation ◽  
Hydrogen Atoms ◽  
Electronic Band ◽  
Cubic Silicon Carbide

In this work, the effects of the diameter and morphology on the electronic band structure of hydrogenated cubic silicon carbide (b-SiC) nanowires is studied by using a semiempirical sp3s* tight-binding (TB) approach applied to the supercell model, where the Si- and C-dangling bonds on the surface are passivated by hydrogen atoms. Moreover, TB results (for the bulk) are compared with density functional calculations in the local density approximation. The results show that though surface morphology modifies the band gap, the change is more systematic with the thickness variation. As expected, hydrogen saturation induces a broadening of the band gap energy because of the quantum confinement effect.

Anisotropically Nanostructured Silicon: A First-Principle Approach.

2004 ◽  
Vol 832 ◽  
Author(s):  
Yuri Bonder ◽  
Chumin Wang
Keyword(s):  
Experimental Data ◽  
Density Functional ◽  
First Principle ◽  
Hydrogen Atoms ◽  
Functional Theory ◽  
Nanostructured Silicon ◽  
Plane Anisotropy ◽  
The Density Functional Theory ◽  
The Difference ◽  
Good Agreement

ABSTRACTOptical properties of birefringent porous-silicon layers are studied within the density functional theory. Starting from a (110)-oriented supercell of 32 silicon atoms, columns of atoms in directions [100] and [010] are removed and the dangling bonds are saturated with hydrogen atoms. The results show an in-plane anisotropy in the dielectric function and in the refractive index (n). The difference Δn defined as n[110] -n[001] is compared with experimental data and a good agreement is observed. Also, the possibility in determining the morphology of pores by using polarized lights is analyzed.

THEORETICAL STUDY OF THE BAND GAP OF SrSe AND SrTe IN GW APPROXIMATION

2011 ◽  
Vol 25 (23) ◽  
pp. 1905-1914
Author(s):  
XIAO LING ZHU ◽  
HONG ZHANG ◽  
XIN LU CHENG
Keyword(s):  
Band Gap ◽  
Density Functional ◽  
Theoretical Study ◽  
Generalized Gradient ◽  
Gw Approximation ◽  
Functional Theory ◽  
The Density Functional Theory ◽  
Structural And Electronic Properties ◽  
Experimental Values ◽  
Interaction Approximation

Using the first-principles pseudopotential method within a generalized gradient approximation of the density functional theory, the structural and electronic properties of SrSe and SrTe have been studied. The calculated lattice parameters are in excellent agreement with experimental values, whereas the error in the minimum gap value is as high as 43.25% in SrSe . To get reliable band gap values of SrSe and SrTe , we employ the GW (G is the Green's function and W is the screened Coulomb interaction) approximation method. The result in GW approximation improves the band gap value of the SrSe greatly and agrees with the value of experimental measurement.

First-principle study of the electronic structure and optical property of Nb-doped anatase TiO2

2014 ◽  
Vol 28 (17) ◽  
pp. 1450091
Author(s):  
Q. Y. Hou ◽  
Q. L. Liu ◽  
C. W. Zhao ◽  
Y. Zhang
Keyword(s):  
Electronic Structure ◽  
Optical Property ◽  
Band Gap ◽  
Absorption Edge ◽  
Short Wavelength ◽  
Density Functional ◽  
Functional Theory ◽  
Long Wavelength ◽  
The Density Functional Theory ◽  
The Stability

The absorption edge shifted to long wavelength direction and short wavelength direction of two opposite experimental conclusions have been reported, when the band-gap and absorption spectra of Nb -doped anatase TiO 2 were studied. In order to solve this contradiction, the electronic structure and the optical property of Nb heavy doped anatase TiO 2 have been studied by the first-principles plane-wave ultrasoft pseudopotential method based on the density functional theory with +U method modification. The calculated results indicate that the higher the Nb -doping is, the higher the total energy is, the worse the stability is, the higher the formation energy is, the more difficult the doping is, the wider the optical band-gap is, the more obvious the absorption edge shifting to short wavelength direction is, the lower the absorptivity and the reflectivity is, which is in agreement with the experimental results. The reasonable interpretation of the contradiction has been reported in this paper, too.

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