MOCVD of High-K Dielectrics and Conductive Metal Nitride Thin Films

1999 ◽  
Vol 606 ◽  
Author(s):  
Yoshihide Senzaki ◽  
Richard F. Hamilton ◽  
Kimberly G. Reid ◽  
Christopher C. Hobbs ◽  
Rama I. Hegdec ◽  
...  
Keyword(s):  
Thin Films ◽  
Liquid Mixture ◽  
Xrd Analysis ◽  
Tantalum Nitride ◽  
High Deposition Rate ◽  
Low Viscosity ◽  
High K ◽  
Liquid Injection ◽  
Direct Liquid Injection ◽  
Deposited Films

AbstractA known liquid mixture of [(CH3CH2)2N]3 Ta=NCH2CH3 and [(CH3CH2)2N]3Ta[ð2-CH3CH2N=CH(CH3)] was studied to deposit Ta2O5 and TaN thin films by CVD. Films were deposited at temperatures below 400°C using oxygen for oxide and ammonia for nitride, respectively. XRD analysis revealed that as-deposited amorphous tantalum oxide films were converted to hexagonal Ta2O5 after annealing under oxygen, while tantalum nitride thin films contained cubic TaN as deposited. The low viscosity, thermal stability, and sufficient volatility of the precursor allows direct liquid injection to deliver the precursor, which results in high deposition rate and uniformity of the deposited films.

A Novel Direct Liquid Injection Low Pressure Chemical Vapor Deposition System (DLI-LPCVD) for the Deposition of Thin Films

2017 ◽  
Vol 19 (8) ◽  
pp. 1700193 ◽  
Author(s):  
Mattias Vervaele ◽  
Bert De Roo ◽  
Jolien Debehets ◽  
Marilyne Sousa ◽  
Luman Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Liquid Injection ◽  
Pressure Chemical ◽  
Direct Liquid Injection

Influence of Substrate Temperature on Some Properties of Close-Spacing Thermally Evaporated CdTe Thin Films

2008 ◽  
Vol 55-57 ◽  
pp. 881-884 ◽  
Author(s):  
Thitinai Gaewdang ◽  
N. Wongcharoen ◽  
P. Siribuddhaiwon ◽  
N. Promros
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Suitable Condition ◽  
Xrd Analysis ◽  
Thermal Evaporation Method ◽  
Cdte Thin Films ◽  
Influence Of Substrate ◽  
Substrate Temperatures ◽  
Deposited Films ◽  
Resistance Value

CdTe thin films with different substrate temperatures have been deposited by thermal evaporation method on glass substrate in vacuum chamber having low pressure about 3.0x10-5 mbar. According to XRD analysis, CdTe thin films are polycrystalline belonging to cubic structure with preferential orientation of (111) plane. The strongest peak intensity of XRD is observed in the film prepared with substrate temperature of 150°C. Band gap and band tail values of the as-deposited films were evaluated from the optical transmission spectra. The lowest dark sheet resistance value was obtained from the film prepared with substrate temperature of 150°C as well. Regarding to our experimental results, it may be indicated that the 150°C substrate temperature is the most suitable condition in preparing CdTe thin films for solar cell applications.

scholarly journals Chemical vapor deposition of Ru thin films by direct liquid injection of Ru(OD)[sub 3] (OD=octanedionate)

2000 ◽  
Vol 18 (5) ◽  
pp. 2400 ◽  
Author(s):  
Jung-Hyun Lee ◽  
Joo-Young Kim ◽  
Shi-Woo Rhee ◽  
DooYoung Yang ◽  
Dong-Hyun Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Liquid Injection ◽  
Direct Liquid Injection

Effect of Temperature on Structural and Optical Properties of Chemically Deposited Tin Sulfide Thin Films Suitable for Photovoltaic Structures

2013 ◽  
Vol 665 ◽  
pp. 93-100 ◽  
Author(s):  
T.H. Patel
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Xrd Analysis ◽  
Buffer Layers ◽  
Effect Of Temperature ◽  
Tin Sulfide ◽  
X Ray ◽  
Glass Substrates ◽  
Average Grain Size ◽  
Deposited Films

SnS (tin sulphide) is of interest for use as an absorber layer and the wider energy band gap phases e.g. SnS2, Sn2S3and Sn/S/O alloys of interest as Cd-free buffer layers for use in thin film solar cells. Thin films of tin sulphide have been deposited using CBD at three different bath temperatures (27, 35 and 45 °C) onto microscope glass substrates. The X ray diffraction (XRD) analysis of the deposited films reveled that all films has orthorhombic SnS phase as dominant one with preferred orientations along (111) direction. The temperature influence on the crystalline nature and the presence of other phases of SnS has been observed. The average grain size in the films determined from Scherers formula as well as from Williamson-Hall-plot method agrees well with each other. Energy dispersive X-ray (EDAX) analysis used to determine the film composition suggested that films are almost stoichiometric. The scanning electron microscopy (SEM) reveals that deposited films are pinhole free and consists of uniformly distributed spherical grains. The optical analysis in the 200-1200 nm range suggests that direct allowed transitions are dominant in the absorption process in the films with variation in the band gap (~1.79 to ~2.05 eV) due to variation in deposition temperature.

Direct Liquid Injection − Low Pressure Chemical Vapor Deposition of Silica Thin Films from Di-t-butoxydiacetoxysilane

2017 ◽  
Vol 19 (12) ◽  
pp. 1700425 ◽  
Author(s):  
Mattias Vervaele ◽  
Bert De Roo ◽  
Jolien Debehets ◽  
Marilyne Sousa ◽  
Luman Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Silica Thin Films ◽  
Liquid Injection ◽  
Pressure Chemical ◽  
Direct Liquid Injection
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