In-Situ Mass Spectroscopy of ECR Silane Plasmas for Amorphous and Microcrystalline Silicon Growth

2000 ◽  
Vol 609 ◽  
Author(s):  
Young J. Song ◽  
Elena Guliants ◽  
Hak-Gyu Lee ◽  
Wayne A. Anderson
Keyword(s):  
Mass Spectroscopy ◽  
Atomic Hydrogen ◽  
Dark Conductivity ◽  
Input Power ◽  
Chamber Pressure ◽  
Film Properties ◽  
Hydrogen Dilution ◽  
Silicon Growth ◽  
Si Films

ABSTRACTECR silane plasmas for the deposition of a-Si:H and μc-Si films were investigated by in-situ mass spectroscopy (MS) using a quadrupole residual gas analyzer. The results showed that the intensities of ionic and neutral species (H, H2, He, Ar, Si and SiHx) in the 2 % SiH4/He plasma are strongly dependent on the deposition conditions such as chamber pressure, input power and hydrogen dilution. In all cases, the prevalence of Si ions was observed over SiH, SiH2 and SiH3 ions, suggesting a high decomposition rate of the silane in the plasma. In particular, the population of atomic hydrogen in the plasma seems to play a key role in the properties of both a-Si:H and μc-Si films. For example, the increased intensity of atomic hydrogen, compared to that of molecular hydrogen, resulted in the better quality a-Si:H film, showing a higher photo and dark conductivity ratio of ~105. The intensity of the hydrogen species was especially sensitive to the chamber pressure. The correlation between MS spectra and film properties is presented.

Microcrystalline Silicon Growth: Deposition Rate Limiting Factors

1998 ◽  
Vol 507 ◽  
Author(s):  
S. Hamma ◽  
D. Colliquet ◽  
P. Rocai Cabarrocas
Keyword(s):  
Deposition Rate ◽  
Hydrogen Plasma ◽  
Limiting Factors ◽  
Layer By Layer ◽  
Microcrystalline Silicon ◽  
Glass Substrates ◽  
Hydrogen Dilution ◽  
Corning Glass ◽  
Silicon Growth

ABSTRACTMicrocrystalline silicon films were deposited on corning glass substrates both by the standard hydrogen dilution and the layer-by-layer (LBL) technique. In-situ UV-visible spectroscopic ellipsometry measurements were performed to analyze the evolution of the composition of the films.The change of the hydrogen plasma conditions by increasing the pressure in the LBL process leads to a faster kinetic of crystallization and to an increase of the deposition rate by a factor of two. The increase of the pressure and the decrease of the inter-electrode distance allowed to increase the deposition rate from 0.26 to 3 Å/s in the hydrogen dilution technique. Interestingly enough, the crystalline fraction of the films remains higher than 50%. However, as the deposition rate increases the growth process results in a slower kinetic of crystallization with a long range evolution of the film composition (up to 0.5 νm).

Gas Phase Chemistry Study During Deposition of a-Si:H and μc-Si:H Films by HWCVD using Quadrupole Mass Spectrometry

2002 ◽  
Vol 715 ◽  
Author(s):  
Samadhan B. Patil ◽  
Alka A. Kumbhar ◽  
R. O. Dusane
Keyword(s):  
Mass Spectrometry ◽  
Gas Phase ◽  
Chemical Species ◽  
Quadrupole Mass ◽  
Film Properties ◽  
Quadrupole Mass Spectrometry ◽  
Gas Phase Chemistry ◽  
Hydrogen Dilution ◽  
Phase Chemistry

AbstractAmorphous and microcrystalline silicon films were deposited by HWCVD under different deposition conditions and the gas phase chemistry was studied by in situ Quadrupole Mass Spectrometry. Attempt is made to correlate the properties of the films with the gas phase chemistry during deposition. Interestingly, unlike in PECVD, partial pressure of H2 is higher than any other species during deposition of a-Si:H as well as μc-Si:H. Effect of hydrogen dilution on film properties and on concentration of various chemical species in the gas phase is studied. For low hydrogen dilution [H2]/ [SiH4] from 0 to 1 (where [SiH4] is 10 sccm), all films deposited are amorphous with photoconductivity gain of ∼ 106. During deposition of these amorphous films SiH2 was dominant in gas phase next to [H2]. Interestingly [Si]/[SiH2] ratio increases from 0.4 to 0.5 as dilution increased from 0 to 1, and further to more than 1 for higher hydrogen dilution leading to [Si] dominance. At hydrogen dilution ratio 20, consequently films deposited were microcrystalline.

Solar-Cell Suitable μc-Si Films Grown by ECR-CVD

2000 ◽  
Vol 609 ◽  
Author(s):  
M. Birkholz ◽  
E. Conrad ◽  
K. Lips ◽  
B. Selle ◽  
I. Sieber ◽  
...  
Keyword(s):  
Electron Cyclotron Resonance ◽  
Film Growth ◽  
Dark Conductivity ◽  
Film Deposition ◽  
Degree Of Crystallinity ◽  
High Hydrogen ◽  
Hydrogen Dilution ◽  
Impurity Contamination ◽  
Si Films ◽  
High Degree

ABSTRACTThe preparation of μc-Si films from SiH4-H2 mixtures by electron-cyclotron resonance (ECR) CVD at deposition temperatures ≤ 400°C on foreign substrates is reported. Deposition conditions were identified for which Si films with a high degree of crystallinity were grown as was confirmed by Raman spectroscopy. A factorial analysis was carried out, for which the influence of deposition temperature, microwave power, hydrogen dilution and total pressure on film growth were investigated. Samples of optimized crystallinity were prepared in a lowpressure and high-hydrogen dilution regime. In-plane grain sizes were measured by TEM and found to be on the order of 10 - 12 nm. Next to the optimization of crystallinity several sources of impurity contamination during film deposition were identified and eliminated. Intrinsic μc-Si layers could be prepared under these conditions that exhibited a dark conductivity σd of 2 × 10-7 S/cm and photosensitivity σph/σd of 150. It is concluded that ECR CVD is capable of producing intrinsic layers with electronic properties as necessary for use in state-of-the-art n-i-p μc-Si solar cells.

Preparation of High-Quality a-SiGe:H films with Low Impurity Oncentration by the Hydrogen Dilution Method

1991 ◽  
Vol 219 ◽  
Author(s):  
Katsunobu Sayama ◽  
Hisao Haku ◽  
Hiroshi Dohjoh ◽  
Masao Isomura ◽  
Noboru Nakamura ◽  
...  
Keyword(s):  
Conversion Efficiency ◽  
Impurity Concentration ◽  
Red Light ◽  
Optical Filter ◽  
Dilution Method ◽  
Film Properties ◽  
High Quality ◽  
Hydrogen Dilution ◽  
Si Films ◽  
High Photosensitivity

ABSTRACTA-SiGe: H film properties with a low impurity concentration were investigated using a super chamber in the range of Ge content of 0% to 36%. These a-SiGe films can maintain a high photosensitivity of about 106 for Ge content up to 13%, which is comparable to high-quality a~Si films. It was found that impurity incorporation deteriorates optoelectronic properties in the range of a small amount of Ge content, and film rigidity in the range of a large amount of Ge content. Using high-quality a-SiGe films with a low impurity concentration in solar cells, the highest conversion efficiency of 3.15% was obtained for an a-SiGe single-junction cell under red light (AM-1.5, 100mW/cm2 light through the optical filter, in which the wavelength of transmitted light is longer than 650nm). A stacked cell of a-Si/a-Si/a-SiGe has a conversion efficiency of 11.9%.

Structure of Si:H Films Fabricated by Plasma-Enhanced Cvd using Hydrogen Diluted Plasma

2000 ◽  
Vol 609 ◽  
Author(s):  
F. Edelman ◽  
A. Chack ◽  
R. Weil ◽  
R. Beserman ◽  
P. Werner ◽  
...  
Keyword(s):  
High Rate ◽  
Hydrogen Dilution ◽  
Average Grain Size ◽  
Si Films ◽  
20 Nm ◽  
Spectroscopy Optical ◽  
Substrate Temperatures ◽  
Hydrogen Effusion ◽  
Nanocrystalline Si

ABSTRACTThe structure of undoped Si:H films deposited at a high rate of 6-9 Å/s in an RF (13.56 MHz) plasma from hydrogen-silane gas mixtures at various substrate temperatures was studied using TEM (with in-situ annealing), XRD, Raman spectroscopy, optical absorption and hydrogen effusion. It is found that under our conditions the amorphous to crystalline transition occurs in a relatively narrow range of parameters, influenced mainly by hydrogen dilution and to a lesser degree by the substrate temperature. In the crystalline range the material is found to be nanocrystalline (average grain size 20 nm) and the crystals are essentially stable up to 800°C annealing. The crystal structure of a mixed amorphousnanocrystalline phase of samples deposited near the edge of crystallinity is also found to be rather stable. Nanocrystalline Si films deposited under these latter deposition conditions reveal in hydrogen effusion a relatively compact material and show high solar cell efficiencies (6-8%) when incorporated as i-layers in pin solar cells.

Nanocrystalline silicon ( nc-Si ) from single ion beam sputtering

2003 ◽  
Vol 762 ◽  
Author(s):  
Z.B. Zhou ◽  
G.M. Hadi ◽  
R.Q. Cui ◽  
Z.M. Ding ◽  
G. Li
Keyword(s):  
Solar Cell ◽  
Ion Beam ◽  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Chamber Pressure ◽  
Ion Beam Sputtering ◽  
High Hydrogen ◽  
Beam Sputtering ◽  
Si Films ◽  
Nanocrystalline Silicon Films

AbstractBased on a small set of selected publications on the using of nanocrystalline silicon films (nc-Si) for solar cell from 1997 to 2001, this paper reviews the application of nc-Si films as intrinsic layers in p-i-n solar cells. The new structure of nc-Si films deposited at high chamber pressure and high hydrogen dilution have characters of nanocrystalline grains with dimension about several tens of nanometer embedded in matrix of amorphous tissue and a high volume fraction of crystallinity (60~80%). The new nc-Si material have optical gap of 1.89 eV. The efficiency of this single junction solar cell reaches 8.7%. This nc-Si layer can be used not only as an intrinsic layer and as a p-type layer. Also nanocrystalline layer may be used as a seed layer for the growth of polycrystalline Si films at a low temperature.We used single ion beam sputtering methods to synthesize nanocrystalline silicon films successfully. The films were characterized with the technique of X-ray diffraction, Atomic Force Micrographs. We found that the films had a character of nc-amorphous double phase structure. Conductivity test at different temperatures presented the transportation of electrons dominated by different mechanism within different temperature ranges. Photoconductivity gains of the material were obtained in our recent investigation.

scholarly journals Converting copper sulfide to copper with surface sulfur for electrocatalytic alkyne semi-hydrogenation with water

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Yongmeng Wu ◽  
Cuibo Liu ◽  
Changhong Wang ◽  
Yifu Yu ◽  
Yanmei Shi ◽  
...  
Keyword(s):  
Binding Energy ◽  
Noble Metal ◽  
Atomic Hydrogen ◽  
Copper Sulfide ◽  
Low Cost ◽  
Water Electrolysis ◽  
Metal Free ◽  
Copper Nanowire

AbstractElectrocatalytic alkyne semi-hydrogenation to alkenes with water as the hydrogen source using a low-cost noble-metal-free catalyst is highly desirable but challenging because of their over-hydrogenation to undesired alkanes. Here, we propose that an ideal catalyst should have the appropriate binding energy with active atomic hydrogen (H*) from water electrolysis and a weaker adsorption with an alkene, thus promoting alkyne semi-hydrogenation and avoiding over-hydrogenation. So, surface sulfur-doped and -adsorbed low-coordinated copper nanowire sponges are designedly synthesized via in situ electroreduction of copper sulfide and enable electrocatalytic alkyne semi-hydrogenation with over 99% selectivity using water as the hydrogen source, outperforming a copper counterpart without surface sulfur. Sulfur anion-hydrated cation (S2−-K+(H2O)n) networks between the surface adsorbed S2− and K+ in the KOH electrolyte boost the production of active H* from water electrolysis. And the trace doping of sulfur weakens the alkene adsorption, avoiding over-hydrogenation. Our catalyst also shows wide substrate scopes, up to 99% alkenes selectivity, good reducible groups compatibility, and easily synthesized deuterated alkenes, highlighting the promising potential of this method.

Amorphous Silicon Selenium Alloy Film Deposited Under Hydrogen Dilution

1991 ◽  
Vol 219 ◽  
Author(s):  
Muzhi He ◽  
Guang H. Lin ◽  
J. O'M. Bockris
Keyword(s):  
Amorphous Silicon ◽  
Chemical Vapor ◽  
Selenium Concentration ◽  
Alloy Film ◽  
Dark Conductivity ◽  
Flow Rate Ratio ◽  
Selenium Atom ◽  
Alloy Films ◽  
Hydrogen Dilution ◽  
Photo Response

ABSTRACTAmorphous silicon selenium alloy films were prepared by plasma enhanced chemical vapor deposition with hydrogen dilution. The flow rate ratio of hydrogen to silane was about 8:1. Amorphous silicon selenium alloy was found to have an optical bandgap ranging from 1.7 eV to 2.0 eV depending on the selenium concentration in the films. The light to dark conductivity ratios of the alloy films are ∼ 104. The optical and electrical properties, Urbach tail energy and sub-bandgap photo response spectroscopy of the alloy film were investigated. The film quality of the alloy deposited with hydrogen dilution is greatly improved comparing to that of the alloy film deposited without hydrogen dilution. The electron spin resonance experiment shows that selenium atom is a good dangling bond terminator.

In situ observation of atomic hydrogen etching on diamond-like carbon films produced by pulsed laser deposition

2001 ◽  
Vol 174 (3-4) ◽  
pp. 251-256 ◽  
Author(s):  
C.-L Cheng ◽  
C.-T Chia ◽  
C.-C Chiu ◽  
C.-C Wu ◽  
H.-F Cheng ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Atomic Hydrogen ◽  
Pulsed Laser ◽  
Carbon Films ◽  
Laser Deposition ◽  
Diamond Like Carbon ◽  
In Situ Observation ◽  
Hydrogen Etching

Fabrication of Polycrystalline Silicon on Glass from Fluorinated Precursors with the Aid of Atomic Hydrogen

1995 ◽  
Vol 403 ◽  
Author(s):  
T. Akasaka ◽  
D. He ◽  
I. Shimizu
Keyword(s):  
Thin Films ◽  
Atomic Hydrogen ◽  
Polycrystalline Silicon ◽  
In Situ Observation ◽  
Layer By Layer ◽  
High Quality ◽  
Deposition Parameters ◽  
Columnar Grains ◽  
Step Growth

AbstractHigh quality polycrystalline silicon was made on glass from fluorinated precursors by two step growth, i.e., (1) formation of seed crystals on glass by layer-by-layer(LL) technique and (2) grain-growth on the seeds. In LL technique, deposition of ultra-thin films and treatment with atomic hydrogen was repeated alternately. Columnar grains with 200 nm dia were grown epitaxy-like on the seeds by optimizing the deposition parameters under in situ observation with spectroscopic ellipsometry.

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