Quantum Dot Growth in the Si-Ge-C System Through Multi-Step Procedure
Keyword(s):
ABSTRACTTo fabricate nanometer-sized Ge dots on Si(100), we have investigated multi-step procedure, involving low temperature deposition of a Ge layer, a sub-monolayer C on a Ge wetting layer, a Ge top layer for three-dimensional (3D) dot formation and post-annealing. Effects of each procedure were discussed on the basis of an atomic force microscope study. 10nm-sized Ge dots with a high number density in the order of 1011 cm−2 were grown on the Si(100) substrate by combining each procedure and optimizing experimental conditions, such as deposition temperature, the C layer thickness and post-annealing temperature.
2018 ◽
Vol 7
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pp. 48
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Vol 10
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pp. 6419-6423
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2009 ◽
Vol 67
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pp. 65-70
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2016 ◽
Vol 41
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pp. 436-440
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2006 ◽
Vol 253
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pp. 2108-2112
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