Interaction of Slip Bands with Grain Boundary - in situ TEM Observation

2000 ◽  
Vol 652 ◽  
Author(s):  
Juliana Gemperlová ◽  
Alain Jacques ◽  
Antonín Gemperle ◽  
Niva Zárubová
Keyword(s):  
Grain Boundary ◽  
Slip System ◽  
The Other ◽  
In Situ Tem ◽  
Post Mortem ◽  
Secondary Slip ◽  
Slip Bands ◽  
Transmission Electron ◽  
Primary Slip System

ABSTRACTMechanism of the slip transmission across the grain boundaries was studied on Σ3 bicrystals of Fe-4at%Si by transmission electron microscopy. In situ straining experiments as well as post mortem observations were performed. Three distinct events were observed in dependence on the angle α between the slip and grain boundary planes, namely transformation of the tertiary slip system in one grain into the secondary slip system in the other grain for α ≍ 90°, cross slip of dislocations of the primary slip system into the {112} plane parallel to the grain boundary for α ≍21°, and an abrupt formation of a sub-grain boundary in one grain for α ≍49°. Reasons for these diverse phenomena will be discussed in terms of interactions between the slip dislocations and the grain boundary dislocations.

Grain Boundary Responses to Local and Applied Stress: An In Situ TEM Deformation Study

2006 ◽  
Vol 976 ◽  
Author(s):  
Bryan Miller ◽  
Jamey Fenske ◽  
Dong Su ◽  
Chung-Ming Li ◽  
Lisa Dougherty ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Grain Growth ◽  
Transmission Electron Microscope ◽  
In Situ Tem ◽  
Deformation Twins ◽  
Transmission Electron ◽  
Dislocation Interactions

AbstractDeformation experiments at temperatures between 300 and 750 K have been performed in situ in the transmission electron microscope to investigate dislocation interactions and reactions with grain boundaries and other obstacles. Dislocations, both partial and perfect, as well as deformation twins have been observed being emitted from grain boundaries and, in some cases, even the same grain boundary. The ejection of dislocations from the grain boundary can result in its partial or total annihilation. In the latter case, the disintegration of the grain boundary was accompanied by grain growth and a change in misorientation.

The Slip Transfer Process Through Grain Boundaries in HCP Ti

1993 ◽  
Vol 319 ◽  
Author(s):  
J. Shirokoff ◽  
I.M. Robertson ◽  
H.K. Birnbaum
Keyword(s):  
Grain Boundary ◽  
Slip System ◽  
Grain Boundaries ◽  
Slip Systems ◽  
Boundary Dislocation ◽  
Burgers Vector ◽  
Slip Transfer ◽  
Transmission Electron ◽  
Fcc Materials

AbstractInformation on the mechanisms of slip transfer across grain boundaries in an HCP α-Ti alloy has been obtained from deformation experiments performed In situ in the transmission electron microscope. Initially, lattice dislocations are accommodated within the grain boundary until a critical local dislocation density is reached. The boundary then responds by activating slip in the adjoining grain on the slip system experiencing the highest local resolved shear stress and producing the residual grain-boundary dislocation with the smallest Burgers vector. Slip on secondary slip systems may be initiated provided they reduce the magnitude of the Burgers vector of, or eliminate, the residual grainboundary dislocation. The selection rules used to predict the slip system activated by the grain boundary are the same as apply in ordered and disordered FCC materials.

In situ TEM studies of deformation and fracture

1989 ◽  
Vol 47 ◽  
pp. 622-623
Author(s):  
I.M. Robertson ◽  
T.C. Lee ◽  
D.K. Dewald ◽  
H.K. Birnbaum
Keyword(s):  
Grain Boundary ◽  
Video Camera ◽  
In Situ Tem ◽  
Video Tape ◽  
Slip Systems ◽  
Camera System ◽  
Dynamic Events ◽  
Transmission Electron ◽  
Deformation And Fracture

The in-situ TEM straining technique has been used to investigate the micromechanisms of deformation and fracture in several ductile and semi-brittle systems. Attention has been focussed on the dislocation structures ahead of advancing cracks and on the interaction between lattice dislocations and grain boundaries.The deformation experiments were performed in-situ in a transmission electron microscope equipped with a video camera system. The dynamic events were recorded on video tape with a time resolution of l/30th of a second. Static interactions were recorded using the regular microscope plate system. The straining stage deforms the samples in Mode I and can operate at a displacement rate of 4 in sec-1.An example of one of the possible interactions between lattice dislocations and a ∑- 3 ([ll)/60°) grain boundary in 310 stainless steel is shown in the micrograph in Figure 1. The dislocations on slip systems A (a/2[110)1 (ll) 1 ) and B (a/2[101] (11) 1 ) impinge on the grain boundary, generating slip systems C (a/2[l0) 2/(111) 2) and D (a/2[l0) 2/(111) 2). To understand this effect three conditions were considered:

scholarly journals Direct observation of dislocation plasticity in high-Mn lightweight steel by in-situ TEM

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Sung-Dae Kim ◽  
Jun Young Park ◽  
Seong-Jun Park ◽  
Jae hoon Jang ◽  
Joonoh Moon ◽  
...  
Keyword(s):  
Slip Band ◽  
In Situ Tem ◽  
Tem Analysis ◽  
Premature Failure ◽  
Slip Bands ◽  
Dislocation Plasticity ◽  
Transmission Electron ◽  
Enhanced Strain ◽  
Planar Dislocation

Abstract To gain the fundamental understanding of deformation mechanisms in an aluminum-containing austenitic high-Mn steel (Fe-32Mn-8.9Al-0.78 C (wt.%)), in-situ straining transmission electron microscopy (TEM) analysis is conducted. The in-situ observation during the deformation demonstrates that the plastic deformation is accommodated by the pronounced planar dislocation gliding followed by the formation of slip bands (SBs) and highly dense dislocation walls (HDDWs). Experimental evidences of the glide plane softening can be obtained from the interaction between the gliding perfect dislocations and the L’12 ordered precipitates in the austenite matrix. Furthermore, the observation of the localized cross-slip of dislocations at the slip band intersections enables to understand why slip bands are extensively developed without mutual obstructions between the slip bands. The enhanced strain hardening rate of the aluminum-containing austenitic high-Mn steels can be attributed to the pronounced planar dislocation glides followed by formation of extensive slip band which prevent premature failure by suppressing strain localization.

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

In situ TEM Studies of agglomeration of sub-nanometer Ru layers in Ru/C multilayers

1992 ◽  
Vol 50 (1) ◽  
pp. 256-257
Author(s):  
Tai D. Nguyen ◽  
Ronald Gronsky ◽  
Jeffrey B. Kortright
Keyword(s):  
Layered Structure ◽  
Driving Force ◽  
High Energy ◽  
Superior Performance ◽  
In Situ Tem ◽  
Rayleigh Instability ◽  
Practical Applications ◽  
Transmission Electron ◽  
Diffraction Patterns

Nanometer period Ru/C multilayers are one of the prime candidates for normal incident reflecting mirrors at wavelengths < 10 nm. Superior performance, which requires uniform layers and smooth interfaces, and high stability of the layered structure under thermal loadings are some of the demands in practical applications. Previous studies however show that the Ru layers in the 2 nm period Ru/C multilayer agglomerate upon moderate annealing, and the layered structure is no longer retained. This agglomeration and crystallization of the Ru layers upon annealing to form almost spherical crystallites is a result of the reduction of surface or interfacial energy from die amorphous high energy non-equilibrium state of the as-prepared sample dirough diffusive arrangements of the atoms. Proposed models for mechanism of thin film agglomeration include one analogous to Rayleigh instability, and grain boundary grooving in polycrystalline films. These models however are not necessarily appropriate to explain for the agglomeration in the sub-nanometer amorphous Ru layers in Ru/C multilayers. The Ru-C phase diagram shows a wide miscible gap, which indicates the preference of phase separation between these two materials and provides an additional driving force for agglomeration. In this paper, we study the evolution of the microstructures and layered structure via in-situ Transmission Electron Microscopy (TEM), and attempt to determine the order of occurence of agglomeration and crystallization in the Ru layers by observing the diffraction patterns.

In situ TEM observations of melting in nanosized eutectic Pb-Cd inclusions embedded in Al

1996 ◽  
Vol 54 ◽  
pp. 986-987
Author(s):  
S. Hagège ◽  
U. Dahmen ◽  
E. Johnson ◽  
A. Johansen ◽  
V.S. Tuboltsev
Keyword(s):  
Electron Microscope ◽  
Melt Spinning ◽  
Ternary Alloys ◽  
Solid Matrix ◽  
Eutectic System ◽  
In Situ Tem ◽  
In Situ Observation ◽  
Orientation Relationships ◽  
Transmission Electron

Small particles of a low-melting phase embedded in a solid matrix with a higher melting point offer the possibility of studying the mechanisms of melting and solidification directly by in-situ observation in a transmission electron microscope. Previous studies of Pb, Cd and other low-melting inclusions embedded in an Al matrix have shown well-defined orientation relationships, strongly faceted shapes, and an unusual size-dependent superheating before melting.[e.g. 1,2].In the present study we have examined the shapes and thermal behavior of eutectic Pb-Cd inclusions in Al. Pb and Cd form a simple eutectic system with each other, but both elements are insoluble in solid Al. Ternary alloys of Al (Pb,Cd) were prepared from high purity elements by melt spinning or by sequential ion implantation of the two alloying additions to achieve a total alloying addition of up to lat%. TEM observations were made using a heating stage in a 200kV electron microscope equipped with a video system for recording dynamic behavior.

Growth kinetics of Al2Cu in an Al-1.5Cu thin film by in Situ TEM

1993 ◽  
Vol 51 ◽  
pp. 1172-1173
Author(s):  
M. Park ◽  
S.J. Krause ◽  
S.R. Wilson
Keyword(s):  
Thin Film ◽  
In Situ Tem ◽  
Collector Plate ◽  
Transmission Electron ◽  
Device Processing ◽  
Corrosion Susceptibility ◽  
Precipitation Phenomena ◽  
Semiconductor Chips ◽  
Kinetics Of

Cu alloying in Al interconnection lines on semiconductor chips improves their resistance to electromigration and hillock growth. Excess Cu in Al can result in the formation of Cu-rich Al2Cu (θ) precipitates. These precipitates can significantly increase corrosion susceptibility due to the galvanic action between the θ-phase and the adjacent Cu-depleted matrix. The size and distribution of the θ-phase are also closely related to the film susceptibility to electromigration voiding. Thus, an important issue is the precipitation phenomena which occur during thermal device processing steps. In bulk alloys, it was found that the θ precipitates can grow via the grain boundary “collector plate mechanism” at rates far greater than allowed by volume diffusion. In a thin film, however, one might expect that the growth rate of a θ precipitate might be altered by interfacial diffusion. In this work, we report on the growth (lengthening) kinetics of the θ-phase in Al-Cu thin films as examined by in-situ isothermal aging in transmission electron microscopy (TEM).

scholarly journals In-Situ TEM Annealing Observation of Helium Bubble Evolution in Pre-Irradiated FeCoNiCrTi0.2 Alloys

Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3727
Author(s):  
Huanhuan He ◽  
Zhiwei Lin ◽  
Shengming Jiang ◽  
Xiaotian Hu ◽  
Jian Zhang ◽  
...  
Keyword(s):  
Vacuum Arc ◽  
In Situ Tem ◽  
Face Centered Cubic ◽  
Helium Bubble ◽  
High Entropy ◽  
Helium Bubbles ◽  
Transmission Electron ◽  
Bubble Evolution ◽  
Face Centered

The FeCoNiCrTi0.2 high-entropy alloys fabricated by vacuum arc melting method, and the annealed pristine material, are face centered cubic structures with coherent γ’ precipitation. Samples were irradiated with 50 keV He+ ions to a fluence of 2 × 1016 ions/cm2 at 723 K, and an in situ annealing experiment was carried out to monitor the evolution of helium bubbles during heating to 823 and 923 K. The pristine structure of FeCoNiCrTi0.2 samples and the evolution of helium bubbles during in situ annealing were both characterized by transmission electron microscopy. The annealing temperature and annealing time affect the process of helium bubbles evolution and formation. Meanwhile, the grain boundaries act as sinks to accumulate helium bubbles. However, the precipitation phase seems have few effects on the helium bubble evolution, which may be due to the coherent interface and same structure of γ’ precipitation and matrix.

scholarly journals Fracture in Bulk Amorphous Alloys

1998 ◽  
Vol 554 ◽  
Author(s):  
J. A. Horton ◽  
J. L. Wright ◽  
J. H. Schneibel
Keyword(s):  
Crack Propagation ◽  
Crack Growth ◽  
Shear Bands ◽  
Bulk Amorphous Alloy ◽  
In Situ Tem ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Crack Tips ◽  
Temperature Fracture

AbstractThe fracture behavior of a Zr-based bulk amorphous alloy, Zr-10 Al-5 Ti-17.9 Cu-14.6Ni (at.%), was examined by transmission electron microscopy (TEM) and x-ray diffraction forany evidence of crystallization preceding crack propagation. No evidence for crystallizationwas found in shear bands in compression specimens or at the fracture surface in tensile specimens.In- situ TEM deformation experiments were performed to more closely examine actualcrack tip regions. During the in-situ deformation experiment, controlled crack growth occurredto the point where the specimen was approximately 20 μm thick at which point uncontrolledcrack growth occurred. No evidence of any crystallization was found at the crack tips or thecrack flanks. Subsequent scanning microscope examination showed that the uncontrolledcrack growth region exhibited ridges and veins that appeared to have resulted from melting. Performing the deformations, both bulk and in-situ TEM, at liquid nitrogen temperatures (LN2) resulted in an increase in the amount of controlled crack growth. The surface roughness of the bulk regions fractured at LN2 temperatures corresponded with the roughness of the crack propagation observed during the in-situ TEM experiment, suggesting that the smooth-appearing room temperature fracture surfaces may also be a result of localized melting.

Sign in / Sign up

Export Citation Format

Share Document