Characterization of Conductive RuO2 Thin Film as Bottom electrodes for Ferroelectric Thin Films

2000 ◽  
Vol 655 ◽  
Author(s):  
S. Bhaskar ◽  
P. S. Dobal ◽  
S. B. Majumder ◽  
R. S. Katiyar
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Ferroelectric Properties ◽  
Ruthenium Oxide ◽  
Rutile Phase ◽  
Solution Chemistry ◽  
Silicon Substrates ◽  
Rutile Structure ◽  
X Ray ◽  
Si Substrates

AbstractRuthenium Oxide (RuO2) thin films were prepared on silicon substrates by solution chemistry technique. X-ray Diffraction (XRD), Atomic Force Microscopy (AFM), micro-Raman, X-ray photoelectron spectroscopy (XPS), and four probe Van-der-paw technique were used for the film characterization. X-ray analysis shows a rutile structure in these films. The films annealed at 700°C showed lowest resistivity of 29 × 10−5 ohm-cm. The presence of Eg, A1g, and B2g modes is consistent with the Raman spectrum of rutile phase. These modes as well as additional unidentified band at about 477 cm−1 were investigated by temperature dependent Raman studies. Based on the result, band at 477 cm−1 that disappears above 370 K is attributed to hydrated RuO2 present in the films. XPS analysis show stoichiometric rutile RuO2 present in the films. Small concentrations of RuCl3, RuO3 and hydrated RuO2 were also detected. Pb0.9La0.15TiO3 (PLT15) thin films were deposited on RuO2/Si substrates and characterized for its ferroelectric properties to demonstrate that solution deposition technique offers an alternative approach for preparing high quality RuO2 bottom electrodes.

scholarly journals X-ray Photoelectron Spectroscopy (XPS) Analysis of Undoped ZnO and ZnO:Er Thin Films

2015 ◽  
Vol 16 (1) ◽  
pp. 13
Author(s):  
Iwan Sugihartono ◽  
Esmar Budi ◽  
Agus Setyo Budi
Keyword(s):  
Thin Films ◽  
Binding Energy ◽  
Photoelectron Spectroscopy ◽  
Zno Thin Films ◽  
Xps Analysis ◽  
X Ray ◽  
Si Substrates ◽  
Ultrasonic Spray ◽  
P Type

Undoped ZnO and ZnO:Er  thin films were deposited on p-type Si substrates by ultrasonic spray pyrolisis (USP). Undoped and ZnO:Er thin films have been analyzed by using X-ray Photoelectron Spectroscopy (XPS). The results show that the XPS spectrum has two Er peak at ∼157 eV and ∼168 eV. The XPS Zn 2p spectrum of undoped ZnO and ZnO:Er thin films have binding energy for Zn 2p3/2 (~ 1021 eV) and Zn 2p1/2 (~1045eV) were found no shift in binding energy after the incorporation of Er. Meanwhile, after Er incorporates into ZnO, the O 1s spectrum is composed two peak of binding energy (BE) at ~530.5eV and the shoulder about 532.5 eV.Keywords: ZnO thin films, ZnO:Er, XPS, binding energy

ZrC Thin Films Grown by Pulsed Laser Deposition

2003 ◽  
Vol 780 ◽  
Author(s):  
V. Craciun ◽  
D. Craciun ◽  
J. M. Howard ◽  
R. K. Singh
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Surface Region ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Crystalline Films

AbstractZrC thin films were grown on Si substrates by the pulsed laser deposition (PLD) technique. X- ray photoelectron spectroscopy, x-ray diffraction and reflectivity, variable angle spectroscopic ellipsometry, and four point probe measurements were used to investigate the composition, density, thickness, surface morphology, optical and electrical properties of the grown structures. It has been found that crystalline films could be grown only by using fluences above 6 J/cm2 and substrate temperatures in excess of 500 °C. For a fluence of 10 J/cm2 and a substrate temperature of 700 °C, highly (100)-textured ZrC films exhibiting a cubic structure (a=0.469 nm) and a density of 6.7 g/cm3 were deposited. The use of a low-pressure atmosphere of C2H2 had a beneficial effect on crystallinity and stoichiometry of the films. All films contained high levels of oxygen contamination, especially in the surface region, because of the rather reactive nature of Zr atoms.

Influence of the Microstructure on the Optical Characteristics of SrTiO3 thin films

2005 ◽  
Vol 20 (1) ◽  
pp. 68-74 ◽  
Author(s):  
M. Gaidi ◽  
L. Stafford ◽  
A. Amassian ◽  
M. Chaker ◽  
J. Margot ◽  
...  
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Photoelectron Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
Optical Characteristics ◽  
Silicon Substrates ◽  
Deposition Pressure ◽  
X Ray ◽  
Full Characterization

The influence of the microstructure of strontium-titanate-oxide (SrTiO3 or STO) thin films on their optical properties was investigated through an extensive characterization. The STO films have been deposited on silicon substrates by reactive pulsed laser deposition. The effect of the oxygen deposition pressure on the crystalline quality of the films was systematically studied by x-ray diffraction and scanning electron microscopy. Rutherford backscattering spectrometry, x-ray photoelectron spectroscopy, and secondary ion mass spectrometry were used to determine the atomic density and depth concentration profiles of the various species forming the film. The refractive index and extinction coefficient were obtained using variable angle spectroscopic ellipsometry. Based on this full characterization, it is demonstrated that the optical characteristics of the films are directly correlated to their microstructural properties. In particular, the refractive index increases with film density, while losses decrease. In addition, the interface between STO and Si is characterized by an interdiffusion layer. As the deposition pressure is enhanced, the width of this layer significantly increases, inducing localized inhomogeneity of the refractive index.

scholarly journals Influence of Tin Doped TiO2 Nanorods on Dye Sensitized Solar Cells

Materials ◽  
2021 ◽  
Vol 14 (21) ◽  
pp. 6282
Author(s):  
Sandeep B. Wategaonkar ◽  
Vinayak G. Parale ◽  
Sawanta S. Mali ◽  
Chang-Kook Hong ◽  
Rani P. Pawar ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Dye Sensitized Solar Cells ◽  
Rutile Phase ◽  
Tio2 Thin Films ◽  
Doped Tio2 ◽  
X Ray ◽  
Dye Sensitized ◽  
The One ◽  
Energy Conversion Devices

The one-step hydrothermal method was used to synthesize Sn-doped TiO2 (Sn-TiO2) thin films, in which the variation in Sn content ranged from 0 to 7-wt % and, further, its influence on the performance of a dye-sensitized solar cell (DSSC) photoanode was studied. The deposited samples were analyzed by X-ray diffraction (XRD) and Raman spectroscopy, which confirmed the existence of the rutile phase of the synthesized samples with crystallite size ranges in between 20.1 to 22.3 nm. In addition, the bare and Sn-TiO2 thin films showed nanorod morphology. A reduction in the optical band gap from 2.78 to 2.62 eV was observed with increasing Sn content. The X-ray photoelectron spectroscopy (XPS) analysis confirmed Sn4+ was successfully replaced at the Ti4+ site. The 3-wt % Sn-TiO2 based DSSC showed the optimum efficiency of 4.01%, which was superior to 0.87% of bare and other doping concentrations of Sn-TiO2 based DSSCs. The present work reflects Sn-TiO2 as an advancing material with excellent capabilities, which can be used in photovoltaic energy conversion devices.

Hole Doping Through Indium Intercalation into Copper Phthalocyanine

2013 ◽  
Vol 802 ◽  
pp. 273-278 ◽  
Author(s):  
Anuchit Jaruvanawat ◽  
Pakorn Prajuabwan ◽  
Sunit Rojanasuwan ◽  
Annop Chanhom ◽  
Adirek Rangkasikorn ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Properties ◽  
Photoelectron Spectroscopy ◽  
Copper Phthalocyanine ◽  
High Vacuum ◽  
Hole Transport ◽  
Hole Doping ◽  
Silicon Substrates ◽  
X Ray ◽  
Evaporation Technique

A blend of molecular acceptor and molecular donor made of Copper Phthalocyanine (CuPc) and Indium in various ratios were evaporated in high vacuum on to intrinsic silicon substrates by using vacuum thermal co-evaporation technique. Electronic properties of In-doped CuPc thin films have been examined by X-ray photoelectron spectroscopy (XPS). The results obtained by XPS suggests that In-doped CuPc is a hole transport material.

FERROMAGNETISM IN Fe-DOPED ZnO THIN FILMS

2009 ◽  
Vol 23 (06) ◽  
pp. 815-824 ◽  
Author(s):  
R. B. ZHAO ◽  
D. L. HOU ◽  
Y. Y. WEI ◽  
Z. Z. ZHOU ◽  
C. F. PAN ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Exchange Coupling ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
X Ray ◽  
Si Substrates ◽  
Fe Ions

Zn 1-x Fe x O (x = 0.04, 0.06, 0.08, 0.10, 0.12) thin films were grown on Si substrates using reactive magnetron sputtering. X-ray diffraction analyses show that the samples have wurtzite structures with the c-axis orientation. X-ray photoelectron spectroscopy results indicate that the Fe ions are in a +2 charge state in the films. Magnetization measurements indicate that room temperature ferromagnetism is present in films annealed in vacuum while films annealed in air were non-magnetic. The presence of oxygen vacancies in these films may mediate exchange coupling of the dopant ions, resulting in room temperature ferromagnetism.

Crystallization of BaTiO3 Thin Films Prepared by Metalorganic Decomposition with Hydrothermal Treatment at 140°C

2001 ◽  
Vol 688 ◽  
Author(s):  
Zhiqiang Wei ◽  
Minoru Noda ◽  
Masanori Okuyama
Keyword(s):  
Thin Films ◽  
Hydrothermal Treatment ◽  
Photoelectron Spectroscopy ◽  
Inductively Coupled Plasma ◽  
Perovskite Phase ◽  
Processing Temperature ◽  
Structural Development ◽  
X Ray ◽  
Inductively Coupled ◽  
Si Substrates

AbstractBaTiO3 (BTO) thin films with perovskite structure have been prepared on Pt/Ti/SiO2/Si substrates using a combined process of a conventional MOD (metal organic decomposition) process and a hydrothermal treatment. The BTO thin films with polycrystalline structure are grown on Pt/Ti/SiO2/Si substrates at a processing temperature of 140°C. The structural development, stoichiometry, spectroscopic, and dielectric properties of the BTO thin films have been systematically investigated. X-ray diffraction patterns show that well-developed crystallites with a pure perovskite phase have been formed. ICP (Inductively coupled plasma) and XPS (x-ray photoelectron spectroscopy) results show that stoichiometric BTO thin films were obtained.

MBE Growth of Ferroelectric YMnO3 Thin Films on Si(111) Using Y2O3 Buffer Layers

1998 ◽  
Vol 541 ◽  
Author(s):  
Shogo Imada ◽  
Shigeto Shouriki ◽  
Eisuke Tokumitsu ◽  
Hiroshi Ishiwara
Keyword(s):  
Thin Films ◽  
Molecular Beam ◽  
Ferroelectric Properties ◽  
High Energy ◽  
Buffer Layers ◽  
Mbe Growth ◽  
Rocking Curve ◽  
X Ray ◽  
Si Substrates

AbstractA ferroelectric YMnO3 thin films are grown on Si (111) substrates using Y2O3 buffer layers by molecular beam epitaxy (MBE). In-situ reflection high-energy electron diffraction (RHEED) analyses show that both Y2O3 and YMnO3 films are epitaxially grown on Si substrates. X-ray rocking curve measurements also show that the best FWHM (full width at half maximum) values for Y2O3 and YMnO3 films are 0.40° and 0.8°, respectively. C-V characteristics of Al/YMnO3/Y2O3/Si structures indicate the ferroelectric properties of YMnO3 films with a memory window of 0.7V.

X-ray photoelectron spectroscopy studies of silicon suboxides obtained by the sol-gel method

1997 ◽  
Vol 12 (1) ◽  
pp. 100-105 ◽  
Author(s):  
S. Santucci ◽  
E. Cordeschi ◽  
L. Lozzi ◽  
M. Passacantando ◽  
P. Picozzi ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
Dip Coating ◽  
Silicon Substrates ◽  
Ion Sputtering ◽  
X Ray ◽  
Coating Methods ◽  
Spectroscopy Studies ◽  
Compositional Properties

Silicon suboxides thin films obtained by sol-gel and dip-coating methods, starting from a sol containing different percentages of TEOS (tetraethoxysilane) and MTEOS (methyltriethoxysilane), were grown onto silicon substrates. The samples were annealed at 100, 300, and 500 °C, and the electronic and compositional properties of the surface were studied by x-ray photoelectron spectroscopy (XPS) detecting the Si “Auger parameter” and the valence band. The effects produced by an ion-sputtering treatment of the samples were also studied.

The Influence of O2/Ar on the Dielectric Properties of Bismuth Zinc Niobate Titanium Thin Films Prepared by RF Magnetron Sputtering

2012 ◽  
Vol 252 ◽  
pp. 202-206
Author(s):  
Xiao Hua Sun ◽  
Zhi Meng Luo ◽  
Shuang Hou ◽  
Cai Hua Huang ◽  
Jun Zou
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Rf Magnetron Sputtering ◽  
X Ray ◽  
Si Substrates ◽  
Low Dielectric ◽  
Metal Insulator Metal ◽  
Titanium Thin Films

BZNT (Bi1.5Zn0.5Nb0.5Ti1.5O7) thin films were prepared on Pt/Ti/SiO2/Si substrates by radio frequency (RF) magnetron sputtering in different O2/Ar ranging from 4:16 to 7:13. The structure and surface morphology of BZNT thin films were investigated by x-ray diffraction (XRD) and atom force microscopy (AFM). The analysis of component in BZNT films were carried out by x-ray photoelectron spectroscopy (XPS). The dielectric measurements were conducted on metal-insulator-metal capacitors at the frequency from 100 Hz to 1M Hz. It’s found that the O2/Ar ratios significantly influence the elements content in BZNT thin films and the morphology and dielectric properties of BZNT thin films. At 1M Hz, the dielectric constant of BZNT thin films deposited at O2/Ar ranging from 4:16 to 7:13 is 212, 187, 171, 196, respectively. The BZNT thin film prepared at O2/Ar = 6:14 shows the highest figure of merit for its very low dielectric loss of 0.0024.

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