Electron Transmission Through Modified Schottky Barriers

2001 ◽  
Vol 685 ◽  
Author(s):  
Kevin L. Jensen
Keyword(s):  
Schottky Barrier ◽  
Conduction Band ◽  
Current Density ◽  
Transport Mechanism ◽  
Airy Function ◽  
Numerical Approach ◽  
Schottky Barriers ◽  
Present Treatment ◽  
One Dimensional ◽  
Electron Transmission

AbstractThe effects of a Coulomb-like potential in the Schottky barrier existing between a material-diamond interface is analyzed. The inclusion is intended to mimic the effects of an ionized trap within the barrier, and therefore to account for charge injection into the conduction band of diamond via a Poole-Frenkel transport mechanism. The present treatment is to provide a qualitative account of the increase in current density near the inclusion, which can be substantial. The model is first reduced to an analytically tractable one-dimensional tunneling problem addressable by an Airy Function approach in order to investigate the nature of the effect. A more comprehensive numerical approach is then applied. Finally, statistical arguments are used to estimate emission site densities using the results of the aforementioned analysis.

Critique and Improvement of a One-Dimensional Semianalytical Model of a Direct Methanol Fuel Cell

2012 ◽  
Vol 9 (5) ◽  
Author(s):  
C. C. Kuo ◽  
W. E. Lear ◽  
J. H. Fletcher ◽  
O. D. Crisalle
Keyword(s):  
Fuel Cell ◽  
Polarization Curve ◽  
Current Density ◽  
Direct Methanol Fuel Cell ◽  
Membrane Electrode Assembly ◽  
Membrane Electrode ◽  
One Dimensional ◽  
Implicit Equation ◽  
Direct Methanol ◽  
Methanol Fuel Cell

A constructive critique and a suite of proposed improvements for a recent one-dimensional semianalytical model of a direct methanol fuel cell are presented for the purpose of improving the predictive ability of the modeling approach. The model produces a polarization curve for a fuel cell system comprised of a single membrane-electrode assembly, based on a semianalytical one-dimensional solution of the steady-state methanol concentration profile across relevant layers of the membrane electrode assembly. The first improvement proposed is a more precise numerical solution method for an implicit equation that describes the overall current density, leading to better convergence properties. A second improvement is a new technique for identifying the maximum achievable current density, an important piece of information necessary to avoid divergence of the implicit-equation solver. Third, a modeling improvement is introduced through the adoption of a linear ion-conductivity model that enhances the ability to better match experimental polarization-curve data at high current densities. Fourth, a systematic method is advanced for extracting anodic and cathodic transfer-coefficient parameters from experimental data via a least-squares regression procedure, eliminating a potentially significant parameter estimation error. Finally, this study determines that the methanol concentration boundary condition imposed on the membrane side of the membrane-cathode interface plays a critical role in the model’s ability to predict the limiting current density. Furthermore, the study argues for the need to carry out additional experimental work to identify more meaningful boundary concentration values realized by the cell.

scholarly journals Low Leakage and High Forward Current Density Quasi-Vertical GaN Schottky Barrier Diode With Post-Mesa Nitridation

2021 ◽  
Vol 68 (3) ◽  
pp. 1369-1373
Author(s):  
Xuanwu Kang ◽  
Yue Sun ◽  
Yingkui Zheng ◽  
Ke Wei ◽  
Hao Wu ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Current Density ◽  
Schottky Barrier Diode ◽  
Low Leakage ◽  
Forward Current

Schottky barrier rectifier with high current density using vanadium as barrier metal

2001 ◽  
Vol 79 (6) ◽  
pp. 860-862 ◽  
Author(s):  
J. S. Kim ◽  
H. H. Choi ◽  
S. H. Son ◽  
S. Y. Choi
Keyword(s):  
Schottky Barrier ◽  
Current Density ◽  
High Current Density ◽  
High Current ◽  
Barrier Metal

Quantitative Fitting of Nonlinear Current–Voltage Curves and Parameter Retrieval of Semiconducting Nanowire, Nanotube and Nanoribbon Devices

2008 ◽  
Vol 8 (1) ◽  
pp. 252-258 ◽  
Author(s):  
Y. Liu ◽  
Z. Y. Zhang ◽  
Y. F. Hu ◽  
C. H. Jin ◽  
L.-M. Peng
Keyword(s):  
Quantitative Analysis ◽  
Carrier Density ◽  
Semiconductor Nanowires ◽  
Schottky Barriers ◽  
Metal Electrodes ◽  
One Dimensional ◽  
Metal Semiconductor Metal ◽  
Current Voltage ◽  
Semiconducting Nanostructures ◽  
Parameter Retrieval

A quantitative metal-semiconductor-metal (MSM) model and a Matlab based program have been developed and used to obtain parameters that are important for characterizing semiconductor nanowires (NWs), nanotubes (NTs) or nanoribbons (NRs). The use of the MSM model for quantitative analysis of nonlinear current–voltage curves of one-dimensional semiconducting nanostructures is illustrated by working through two examples, i.e., an amorphous carbon NT and a ZnO NW, and the obtained parameters include the carrier density, mobility, resistance of the NT(NW), and the heights of the two Schottky barriers formed at the interfaces between metal electrodes and semiconducting NT(NW).

scholarly journals Residual conductance of correlated one-dimensional nanosystems: A numerical approach

2004 ◽  
Vol 39 (1) ◽  
pp. 107-120 ◽  
Author(s):  
R. A. Molina ◽  
P. Schmitteckert ◽  
D. Weinmann ◽  
R. A. Jalabert ◽  
G.-L. Ingold ◽  
...  
Keyword(s):  
Numerical Approach ◽  
One Dimensional ◽  
Residual Conductance

scholarly journals A Numerical Approach to Solve Volume-Based Batch Crystallization Model with Fines Dissolution Unit

Processes ◽  
2019 ◽  
Vol 7 (7) ◽  
pp. 453 ◽  
Author(s):  
Mukhtar ◽  
Sohaib ◽  
Ahmad
Keyword(s):  
Numerical Approximation ◽  
Chemical Engineering ◽  
Numerical Study ◽  
Moment Generating Function ◽  
Numerical Approach ◽  
Test Problems ◽  
Batch Crystallization ◽  
One Dimensional ◽  
Engineering Sciences ◽  
The Moment

In this article, a numerical study of a one-dimensional, volume-based batch crystallization model (PBM) is presented that is used in numerous industries and chemical engineering sciences. A numerical approximation of the underlying model is discussed by using an alternative Quadrature Method of Moments (QMOM). Fines dissolution term is also incorporated in the governing equation for improvement of product quality and removal of undesirable particles. The moment-generating function is introduced in order to apply the QMOM. To find the quadrature abscissas, an orthogonal polynomial of degree three is derived. To verify the efficiency and accuracy of the proposed technique, two test problems are discussed. The numerical results obtained by the proposed scheme are plotted versus the analytical solutions. Thus, these findings line up well with the analytical findings.

NAND/AND/NOT logic gates response in series of mesoscopic quantum rings

2019 ◽  
Vol 33 (34) ◽  
pp. 1950431 ◽  
Author(s):  
E. Dehghan ◽  
D. Sanavi Khoshnoud ◽  
A. S. Naeimi
Keyword(s):  
Current Density ◽  
Spin Current ◽  
Logic Gates ◽  
Nand Gate ◽  
Double Quantum ◽  
Device Performance ◽  
Quantum Rings ◽  
One Dimensional ◽  
Rashba Spin ◽  
In Series

There is a special class of logic gates, called universal gates, any one of which is sufficient to express any desired computation. The NAND gate is truly global, given that it is already known, each Boolean function can be represented in a circuit that contains only NOT and AND gates, it is sufficient to show that these gates can be defined from the NAND gate. The effect of Rashba spin-orbit interaction (SOI) on the gate response and spin current density in a series of non-interacting one-dimensional rings connected to some leads is studied theoretically within the waveguide theory. The gates response and spin current density are computed in geometry of the system containing two terminal double quantum rings. Also, the presence and absence of Rashba SOI are treated as the two inputs of the AND/NAND/NOT gates. Furthermore, simulation of the device performance demonstrates that vital improvement toward spintronic applications can be achieved by optimizing device parameters such as magnetic flux and Rashba coefficient.

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