High Quality Poly-Si Film and Transistor Formed by Nickel-Induced- Lateral-Crystallization and Pulsed-Rapid-Thermal-Annealing

2001 ◽  
Vol 685 ◽  
Author(s):  
T.C. Leung ◽  
C.F. Cheng ◽  
M.C. Poon
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
High Performance ◽  
Low Cost ◽  
Drain Current ◽  
Large Area ◽  
High Quality ◽  
Lateral Crystallization ◽  
Si Films

AbstractNickel Induced Lateral Crystallization (NILC) and Pulsed Rapid Thermal Annealing (PRTA) have been used to study new low temperature and high quality poly-silicon (poly-Si) films and thin film transistors (TFTs). The growth rate of poly-Si films has been found to greatly increase from 0.025μm/minute to 1.07μm/minute, and the drain current and performance of TFTs have increased by around 75%. The new poly-Si technology has good potential to apply in high performance, large area, fast throughput, low cost and even low temperature device applications.

Low-temperature activation method of poly-Si films using rapid thermal annealing

1997 ◽  
Author(s):  
Kiichi Hirano ◽  
Naoya Sotani ◽  
Isao Hasegawa ◽  
Tomoyuki Nohda ◽  
Hisashi Abe ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Activation Method ◽  
Temperature Activation ◽  
Si Films

Crystallized Si films by low‐temperature rapid thermal annealing of amorphous silicon

1989 ◽  
Vol 65 (5) ◽  
pp. 2069-2072 ◽  
Author(s):  
R. Kakkad ◽  
J. Smith ◽  
W. S. Lau ◽  
S. J. Fonash ◽  
R. Kerns
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Temperature Rapid Thermal Annealing ◽  
Si Films

scholarly journals Nanonet: Low-temperature-processed tellurium nanowire network for scalable p-type field-effect transistors and a highly sensitive phototransistor array

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Muhammad Naqi ◽  
Kyung Hwan Choi ◽  
Hocheon Yoo ◽  
Sudong Chae ◽  
Bum Jun Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Optical Measurements ◽  
Electrical Performance ◽  
Large Area ◽  
Nanowire Network ◽  
P Type ◽  
Nanowire Networks

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.

scholarly journals Molecular Engineering for High-Performance Fullerene Broadband Photodetector

2021 ◽  
Author(s):  
Mingming Su ◽  
Yajing Hu ◽  
Ao Yu ◽  
Zhiyao Peng ◽  
Wangtao Long ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Low Temperature ◽  
Electron Acceptor ◽  
Photoinduced Electron Transfer ◽  
High Performance ◽  
Organic Molecules ◽  
Low Cost ◽  
Molecular Engineering ◽  
Temperature Requirement ◽  
High Flexibility

Broadband photodetectors fabricated with organic molecules have the advantages of low cost, high flexibility, easy processing and low-temperature requirement. Fullerene molecules, due to the electron acceptor and photoinduced electron transfer...

Substrates Dependent Low Temperature Fabrication of Silver Nanoparticles Using Rapid Thermal Annealing for Light Trapping Application

2018 ◽  
Vol 18 (11) ◽  
pp. 7739-7748 ◽  
Author(s):  
Bidyut Barman ◽  
Hrishikesh Dhasmana ◽  
Abhishek Verma ◽  
Amit Kumar ◽  
D. N Singh ◽  
...  
Keyword(s):  
Silver Nanoparticles ◽  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Light Trapping

scholarly journals Ultralow-temperature-driven water-based sorption refrigeration enabled by low-cost zeolite-like porous aluminophosphate

2022 ◽  
Vol 13 (1) ◽  
Author(s):  
Zhangli Liu ◽  
Jiaxing Xu ◽  
Min Xu ◽  
Caifeng Huang ◽  
Ruzhu Wang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Water Sorption ◽  
High Performance ◽  
Global Climate ◽  
Low Cost ◽  
Cost Effective ◽  
High Water ◽  
Coefficient Of Performance ◽  
High Efficient ◽  
Water Based

AbstractThermally driven water-based sorption refrigeration is considered a promising strategy to realize near-zero-carbon cooling applications by addressing the urgent global climate challenge caused by conventional chlorofluorocarbon (CFC) refrigerants. However, developing cost-effective and high-performance water-sorption porous materials driven by low-temperature thermal energy is still a significant challenge. Here, we propose a zeolite-like aluminophosphate with SFO topology (EMM-8) for water-sorption-driven refrigeration. The EMM-8 is characterized by 12-membered ring channels with large accessible pore volume and exhibits high water uptake of 0.28 g·g−1 at P/P0 = 0.2, low-temperature regeneration of 65 °C, fast adsorption kinetics, remarkable hydrothermal stability, and scalable fabrication. Importantly, the water-sorption-based chiller with EMM-8 shows the potential of achieving a record coefficient of performance (COP) of 0.85 at an ultralow-driven temperature of 63 °C. The working performance makes EMM-8 a practical alternative to realize high-efficient ultra-low-temperature-driven refrigeration.

High Performance 0.2 µm Dual Gate Complementary MOS Technologies by Suppression of Transient-Enhanced-Diffusion using Rapid Thermal Annealing

1998 ◽  
Vol 37 (Part 1, No. 3B) ◽  
pp. 1054-1058 ◽  
Author(s):  
Yukio Nishida ◽  
Hirokazu Sayama ◽  
Satoshi Shimizu ◽  
Takashi Kuroi ◽  
Akihiko Furukawa ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
High Performance ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Dual Gate

High Performance Organic Field-Effect Transistors and Integrated Inverters

2001 ◽  
Vol 665 ◽  
Author(s):  
A. Ullmann ◽  
J. Ficker ◽  
W. Fix ◽  
H. Rost ◽  
W. Clemens ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Drain Current ◽  
Organic Field Effect Transistors ◽  
Metal Contacts ◽  
Gate Electrodes ◽  
Polymer Semiconductors ◽  
Set Up

ABSTRACTIntegrated plastic circuits (IPCs) will become an integral component of future low cost electronics. For low cost processes IPCs have to be made of all-polymer Transistors. We present our recent results on fabrication of Organic Field-Effect Transistors (OFETs) and integrated inverters. Top-gate transistors were fabricated using polymer semiconductors and insulators. The source-drain structures were defined by standard lithography of Au on a flexible plastic film, and on top of these electrodes, poly(3-alkylthiophene) (P3AT) as semiconductor, and poly(4-hydroxystyrene) (PHS) as insulator were homogeneously deposited by spin-coating. The gate electrodes consist of metal contacts. With this simple set-up, the transistors exhibit excellent electric performance with a high source-drain current at source - drain and gate voltages below 30V. The characteristics show very good saturation behaviour for low biases and are comparable to results published for precursor pentacene. With this setup we obtain a mobility of 0.2cm2/Vs for P3AT. Furthermore, we discuss organic integrated inverters exhibiting logic capability. All devices show shelf-lives of several months without encapsulation.

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