X-ray Analysis of Si/Ge/Si(001) Heterolayer Structures Grown by Surfactant Mediated Epitaxy.

2001 ◽  
Vol 696 ◽  
Author(s):  
Brad P. Tinkham ◽  
Duane M. Goodner ◽  
Donald A. Walko ◽  
Michael J. Bedzyk
Keyword(s):  
Elasticity Theory ◽  
Linear Elasticity ◽  
Standing Waves ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
Linear Elasticity Theory ◽  
X Ray ◽  
Grazing Incidence Diffraction

AbstractX-ray diffraction and x-ray standing waves (XSW) have been used to investigate the quality of epitaxial ultra-thin Ge films grown on Si(001) with and without Te as a surfactant. The efficacy of Te as a surfactant in this application has been debated. We measured samples between 1 and 10 ML in thickness and our results clearly indicate that Ge films grown with Te are superior to those grown without Te. The coherent positions and coherent fract ons determined from XSW analysis agree well with those predicted by linear elasticity theory for Ge/Si(001). Furthermore, grazing incidence diffraction measurements (GIXD) suggests that 9 ML Ge grown on Si(001) with Te is strained in-plane while the same film grown without Te is relaxed.

New developments including X-ray standing waves in the dynamical Bragg diffraction program of X-ray Server

2021 ◽  
Vol 54 (5) ◽  
pp. 1530-1534
Author(s):  
Sergey Stepanov
Keyword(s):  
Standing Waves ◽  
Grazing Incidence ◽  
Bragg Diffraction ◽  
Use Cases ◽  
X Ray Diffraction ◽  
New Developments ◽  
Dynamical Diffraction ◽  
X Ray

X-ray Server (https://x-server.gmca.aps.anl.gov) is a collection of programs for online modelling of X-ray diffraction and scattering. The dynamical diffraction program is the second most popular Server program, contributing 34% of total Server usage. It models dynamical X-ray diffraction from strained crystals and multilayers for any Bragg-case geometry including grazing incidence and exit. This paper reports on a revision of equations used by the program, which yields ten times faster calculations in most use cases, on implementing calculations of X-ray standing waves and on adding new options for modelling diffraction from monolayers.

Grazing incidence diffraction of cadmium arachidate multilayers at the solid-liquid interface

2005 ◽  
Vol 220 (12) ◽  
Author(s):  
Chad E. Miller ◽  
Jaroslaw Majewski ◽  
Thomas Gog ◽  
Tonya L. Kuhl
Keyword(s):  
Arachidic Acid ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Organic Layers ◽  
Grazing Incidence Diffraction ◽  
Synchrotron Beam ◽  
Solid Liquid Interface ◽  
Solid Liquid ◽  
Monochromatic Synchrotron

AbstractUsing complementary X-ray reflectivity (XR) and grazing incidence X-ray diffraction (GIXD), we report structural studies of supported thin-organic layers in contact with water and air. Using a monochromatic synchrotron beam to penetrate 10 mm of liquid, we have characterized buried films composed of 12.5 repeating bilayers of arachidic acid (C

Thermal Degradation of SiGe Interfaces Studied by X-Ray Reflectivity and Diffraction

1991 ◽  
Vol 239 ◽  
Author(s):  
J. M. Hudson ◽  
A. R. Powell ◽  
D. K. Bowen ◽  
M. Wormington ◽  
B. K. Tanner ◽  
...  
Keyword(s):  
Short Range ◽  
Grazing Incidence ◽  
Sige Layer ◽  
Interface Roughness ◽  
Total Thickness ◽  
X Ray Diffraction ◽  
X Ray ◽  
Surface And Interface ◽  
Superlattice Structures

ABSTRACTWe demonstrate the use of x-ray diffraction to provide accurate compositional information, together with grazing incidence reflectivity to provide information on layer thicknesses and surface and interface roughnesses, on Si/Si1-xGex superlattice structures of less than 200nm total thickness.The quality of SiGe interfaces has been investigated in superlattices where x varies from 0.1 to 0.5. At low Ge compositions the interfaces are shown to be smooth to a few angstroms. However, as the Ge composition in the SiGe layer approaches 50%, severe roughness is observed at the SiGe to Si interfaces, although the Si to SiGe interfaces remain relatively smooth.Upon annealing for one hour at 850°C the Ge diffuses outwards from the SiGe layers and can be closely modelled by inclusion of a (2.4±0.3)nm linearly graded layer either side of the SiGe layer into a simulation program. The long range roughness at the SiGe to Si interface is lost upon annealing leaving only a short range roughness of similar size to the Si to SiGe interface roughness.Reflectivity measurements have been shown to distinguish between interface roughness and interdiffusion for the annealed system.

Waveguide-enhanced scattering from thin biomolecular films

2002 ◽  
Vol 35 (2) ◽  
pp. 163-167 ◽  
Author(s):  
F. Pfeiffer ◽  
U. Mennicke ◽  
T. Salditt
Keyword(s):  
Lipid Bilayers ◽  
Signal To Noise Ratio ◽  
Acyl Chain ◽  
Grazing Incidence ◽  
Waveguide Structure ◽  
X Ray Diffraction ◽  
Signal To Noise ◽  
X Ray ◽  
Grazing Incidence Diffraction ◽  
Chain Ordering

An X-ray diffraction experiment on multilamellar membranes incorporated into an X-ray waveguide structure is reported. In the device, the lipid bilayers are confined to one side by the silicon substrate and to the other side by an evaporated thin metal cap layer. Shining a highly brilliant X-ray beam onto the system, resonantly enhanced, precisely defined and clearly distinguishable standing-wavefield distributions (modes) are excited. The in-plane structure of the acyl chain ordering is then studied by grazing incidence diffraction under simultaneously excited modes. A significant gain in signal-to-noise ratio as well as enhanced spatial resolution can be obtained with such a setup.

Macro and Micro-Stress Distributions in Filled Epoxy Systems

1987 ◽  
Vol 31 ◽  
pp. 223-230
Author(s):  
L. T. Nguyen ◽  
I. C. Noyan
Keyword(s):  
Experimental Study ◽  
Residual Stresses ◽  
Linear Elasticity ◽  
Stress Distributions ◽  
X Ray Diffraction ◽  
Electronic Components ◽  
Linear Elasticity Theory ◽  
X Ray ◽  
Experimental Values ◽  
Epoxy Systems

The results of an experimental study on residual stresses within the encapsulation layers of electronic components are described. For this study, silicon wafers were coated with a flexibilized cycloaliphatic formulation filled with 30 and 40 (vol.) % of Cu particles. The residual stresses were determined by measuring the radii of curvature of the encapsulated wafers. The stress in the Cu particles at the surface was also measured by X-Ray diffraction. It was seen that the stresses within the structure are primarily macro-stresses, with little stress present within the Cu particles. Comparison of the experimental values to those calculated from linear elasticity theory also indicate relaxation within the composite during curing.

In-Depth Distribution of Stresses Measured by Multireflection Grazing Incidence Diffraction

2013 ◽  
Vol 772 ◽  
pp. 143-147
Author(s):  
Marianna Marciszko ◽  
Andrzej Stanisławczyk ◽  
Andrzej Baczmanski ◽  
Krzysztof Wierzbanowski ◽  
Wilfrid Seiler ◽  
...  
Keyword(s):  
Depth Distribution ◽  
Grazing Incidence ◽  
Inverse Laplace Transform ◽  
Stress Profile ◽  
X Ray Diffraction ◽  
X Ray ◽  
Grazing Incidence Diffraction ◽  
Destructive Analysis ◽  
Sample Range ◽  
Non Destructive

The geometry based on the multireflection grazing incidence X-ray diffraction (called the MGIXD method) can be applied to measure residual stresses. Using this method, it is possible to perform a non-destructive analysis of the heterogeneous stresses for different and well defined volumes below the surface of the sample (range of several mm). As the result the average values of stresses weighted by absorption of X-ray radiation are measured. In this work the stress profile as a function of depth for mechanically polished Ti and Al samples were calculated from MGIXD data using inverse Laplace transform.

High-Resolution X-Ray Diffraction Measurements of SiGe/Si Structures

1994 ◽  
Vol 375 ◽  
Author(s):  
J. L. Jordan-Sweet ◽  
P. M. Mooney ◽  
G. B. Stephenson
Keyword(s):  
High Resolution ◽  
Alloy Composition ◽  
Strain Relaxation ◽  
Grazing Incidence ◽  
Diffraction Peak ◽  
Thin Layers ◽  
High Flux ◽  
X Ray Diffraction ◽  
X Ray ◽  
Grazing Incidence Diffraction

AbstractHigh-resolution x-ray diffraction is an excellent probe of strain relaxation in complex SiGe structures. The high flux provided by synchrotron sources enables us to make extensive reciprocal space map measurements and evaluate many samples. The diffraction peak positions of each layer in a step-graded structure, measured for two different reflections, yield quantitative values for the relaxation and alloy composition in the layer. Grazing-incidence diffraction allows us to determine the in-plane structure of very thin layers, which have thickness-broadened peaks at conventional diffraction geometries. We demonstrate the power of these techniques with two examples.

Stress-Depth Profiles in Magnetron Sputtered Mo Films Using Grazing Incidence X-Ray Diffraction (GIXD)

1993 ◽  
Vol 37 ◽  
pp. 189-196 ◽  
Author(s):  
B. L. Ballard ◽  
P. K. Predecki ◽  
D. N. Braski
Keyword(s):  
Grazing Incidence ◽  
X Ray Diffraction ◽  
Vycor Glass ◽  
X Ray ◽  
Force Microscopy ◽  
Fine Grained ◽  
Atomic Force ◽  
Grazing Incidence Diffraction ◽  
Composition Profiles ◽  
Deposition Mode

AbstractIntrinsic stresses as a function of σ, the 1/e penetration depth were measured for a smooth, 1μm thick, fine grained, cylindrical post magnetron sputtered molybdenum film deposited on a vycor glass substrate in the dynamic deposition mode. Using grazing incidence diffraction and the Mo (321) reflection, lattice spacing profiles were determined for τ values from 200-4400 Å. The in-plane intrinsic stresses parallel and perpendicular to the post axis were determined employing the ϕ-integral method and assuming elastic isotropy. The results were related to the surface structure and composition profiles via atomic force microscopy (AFM) and auger electron spectroscopy (AES) respectively.

Analysis of Surface Layers and Thin Films by Low Incident Angle X-Ray Diffraction

1986 ◽  
Vol 30 ◽  
pp. 457-464 ◽  
Author(s):  
S. S. Iyengar ◽  
M. W. Santana ◽  
H. Windischmann ◽  
P. Engler
Keyword(s):  
Thin Films ◽  
Incident Angle ◽  
Grazing Incidence ◽  
Electronics Industry ◽  
Solid Surfaces ◽  
X Ray Diffraction ◽  
Surface Layers ◽  
Double Crystal ◽  
X Ray ◽  
Grazing Incidence Diffraction

Due to the current high interest in characterizing epitaxially deposited thin films required by the electronics industry as well as the increased attention in elucidating reactions between solid surfaces and the environment (e.g., corrosion), investigators have increased their efforts in developing X-ray procedures for analyzing films and surfaces less than 2 μm thick. For example, an entire session of the 1985 Denver Conference on Applications of X-ray Analysis was devoted to this subject and an excellent review of X-ray diffraction techniques for characterizing thin films was recently published by Segmuller (1). Specific techniques include grazing incidence diffraction (2, 3), double crystal diffraction (3), and the use of the Seemann-Bohlin focusing geometry (4, 5).

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