Combinatorial Synthesis and Characterization of CoMnGe Alloys

2001 ◽  
Vol 700 ◽  
Author(s):  
Frank Tsui ◽  
Liang He ◽  
Lei Ma
Keyword(s):  
Structural Evolution ◽  
Magnetic Behavior ◽  
High Energy ◽  
Ternary Alloys ◽  
Si Substrates ◽  
Transport Studies ◽  
Time Scanning ◽  
High Spin Polarization ◽  
Spin Electronic

AbstractTernary alloys of CoMnGe have been synthesized and characterized using combinatorial molecular beam epitaxy techniques. Structural evolution was studied using real-time scanning reflection high-energy electron diffraction, and magnetic properties were probed using magnetooptic Kerr effect imaging and SQUID magnetometry. Growth and properties on several substrate orientations were explored. These alloys exhibit a rich variety of magnetic and magnetooptic behavior, including a robust phase near Co2MnGe with high spin polarization, Tc, and magnetooptic response. The observed magnetic responses show strong correlation with structural transformations, such that structural ordering leads to enhanced magnetism. The observed magnetic behavior and the alloys’ compatibility with Ge and Si substrates make them potential candidates for spin electronic transport studies and applications.

scholarly journals Unidirectional Magnetic Anisotropy in Dense Vertically-Standing Arrays of Passivated Nickel Nanotubes

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2444
Author(s):  
Claudiu Locovei ◽  
Nicolae Filipoiu ◽  
Andrei Kuncser ◽  
Anda-Elena Stanciu ◽  
Ştefan Antohe ◽  
...  
Keyword(s):  
Magnetic Measurements ◽  
Low Cost ◽  
Magnetic Behavior ◽  
Fine Tuning ◽  
Geometrical Parameters ◽  
Micromagnetic Simulations ◽  
Electrochemical Growth ◽  
Si Substrates ◽  
Unidirectional Anisotropy

We report the facile and low-cost preparation as well as detailed characterization of dense arrays of passivated ferromagnetic nickel (Ni) nanotubes (NTs) vertically-supported onto solid Au-coated Si substrates. The proposed fabrication method relies on electrochemical synthesis within the nanopores of a supported anodic aluminum oxide (AAO) template and allows for fine tuning of the NTs ferromagnetic walls just by changing the cathodic reduction potential during the nanostructures’ electrochemical growth. Subsequently, the experimental platform allowed further passivation of the Ni NTs with the formation of ultra-thin antiferromagnetic layers of nickel oxide (NiO). Using adequately adapted magnetic measurements, we afterwards demonstrated that the thickness of the NT walls and of the thin antiferromagneticNiO layer, strongly influences the magnetic behavior of the dense array of exchange-coupled Ni/NiO NTs. The specific magnetic properties of these hybrid ferromagnetic/antiferromagnetic nanosystems were then correlated with the morpho-structural and geometrical parameters of the NTs, as well as ultimately strengthened by additionally-implemented micromagnetic simulations. The effect of the unidirectional anisotropy strongly amplified by the cylindrical geometry of the ferromagnetic/antiferromagnetic interfaces has been investigated with the magnetic field applied both parallel and perpendicular to the NTs axis.

EXAFS investigation of the role of Cu on the chemical order and lattice distortion in L10Fe–Pt–Cu thin films

2014 ◽  
Vol 47 (5) ◽  
pp. 1722-1728 ◽  
Author(s):  
S. Laureti ◽  
C. Brombacher ◽  
D. Makarov ◽  
M. Albrecht ◽  
D. Peddis ◽  
...  
Keyword(s):  
Lattice Distortion ◽  
Structural Evolution ◽  
Local Environment ◽  
Linear Dichroism ◽  
Ternary Alloys ◽  
Chemical Order ◽  
Cu Content ◽  
Exafs Study

This work presents an extended X-ray absorption fine structure (EXAFS) characterization of ternary Fe–Pt–Cu alloys with different Cu content. The EXAFS measurements have been carried out at the CuKα and PtLIIIedges in order to describe the local environment around these elements in the Fe–Pt–Cu samples and to compare the structural evolution as a function of the Cu content. The EXAFS study, based on a substitutional model where the Cu atoms occupy Fe or Pt sites in the tetragonal structure, has been performed by using linear dichroism to enhance the sensitivity to differently oriented bonds and to gain a detailed description of the atomic environment. The study allowed the effects on the chemical order and lattice distortion induced by the Cu atoms to be distinguished experimentally. The determined positions of the Cu atoms in the chemically L10-ordered face-centred tetragonal lattice were correlated with the magnetic properties of Fe–Pt–Cu ternary alloys. In particular, the main effect of Cu atoms in the alloy is a linear reduction of thec/aratio, while the nonmonotonic behaviour of the chemical order is consistent with the variation of the magnetocrystalline anisotropy.

Structural Evolution of Ti-Fe-Si-B Alloys Produced by High-Energy Ball Milling and Sintering

2014 ◽  
Vol 802 ◽  
pp. 3-8
Author(s):  
Wladimir Leite Pereira ◽  
Isadora Rossi Bertoli ◽  
Juliana de Aquino Franzé ◽  
Alfeu Saraiva Ramos ◽  
Neide Aparecida Mariano ◽  
...  
Keyword(s):  
Ball Milling ◽  
Raw Materials ◽  
Structural Evolution ◽  
High Energy ◽  
Milling Process ◽  
High Energy Ball Milling ◽  
Powder Mixtures ◽  
Energy Ball ◽  
Sintered Alloys

This proposal aims at structural characterization of Ti-Fe-Si-B alloys produced by high-energy ball milling and subsequent sintering. In this study, quaternary alloys were prepared from raw materials of high purity: Ti (99.9 wt-%), Fe (99.8 wt-%), Si (99.999 wt-%) and B (99.5 wt-%). The milling process of the Ti-2Fe-22Si-11B and Ti-7Fe-22Si-11B (at-%) powders was carried out in a planetary Fritsch P-5 ball mill. Subsequently, the Ti-Fe-Si-B powders milled for 600 min were sintered (1100 ° C for 240 min) under vacuum to obtain equilibrium structures. The characterization of as-milled powders and sintered alloys was performed by means of X-ray diffraction, scanning electron microscopy, and electron dispersive spectrometry. Extended solid solutions were formed during the initial milling times while that the brittle Ti5Si3 phase was formed for longer milling times in both the quaternary powder mixtures. This fact contributed for reducing the particle sizes. Homogeneous samples containing a small amount of pore were obtained after sintering at 1100°C for 4h. Results have indicated that the iron addition favored the formation of different binary phases of the Ti-Si system, and the formation of the Ti6Si2B compound was inhibited from the Ti-Fe-Si-B powder mixtures.

Structural Evolution of FeAl3 Intermetallic during High-Energy Ball-Milling

2013 ◽  
Vol 755 ◽  
pp. 133-138 ◽  
Author(s):  
J. Luis López-Miranda ◽  
J.R. Romero-Romero ◽  
R. Esparza ◽  
G. Rosas
Keyword(s):  
Ball Milling ◽  
Cast Alloy ◽  
Structural Evolution ◽  
High Energy ◽  
High Energy Ball Milling ◽  
High Symmetry ◽  
Casting Technique ◽  
Conventional Casting ◽  
Energy Ball

In this work, we reported the results obtained by the structural characterization of the FeAl3 intermetallic compound. This material was synthesized by conventional casting technique using Fe (99.97%) and Al (99.92%) elemental metals. Then, the as-cast alloy was subjected to high-energy ball-milling for different times (1, 2.5, 5, 7.5, 10 and 15 h). The characterization of the alloy was performed by X-ray diffraction patterns, scanning and transmission electron microscopy. The results show that FeAl3 intermetallic was produced as a single-phase after conventional casting. The milled experiments show that the FeAl3 (monoclinic) transforms to Fe2Al5 (orthorhombic) after 15h of milling. Therefore, this phase transformation is characterized by a change from low to high symmetry systems.

Electron microscope characterization of MOCVD-grown gap layers on Si

1986 ◽  
Vol 44 ◽  
pp. 724-725
Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson
Keyword(s):  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Lattice Match ◽  
Si Substrates ◽  
Metal Organic ◽  
Good Lattice ◽  
Antiphase Domains

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).

Transmission Electron Microscopy characterization of epitaxial III-V semiconductor thin films grown on Si(100) by ion-assisted deposition

1990 ◽  
Vol 48 (4) ◽  
pp. 686-687
Author(s):  
L. Hultman ◽  
C.-H. Choi ◽  
R. Kaspi ◽  
R. Ai ◽  
S.A. Barnett
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Irradiation ◽  
High Energy ◽  
Nucleation Mechanism ◽  
Layer By Layer ◽  
Extended Defect ◽  
Island Formation ◽  
Si Substrates ◽  
Transmission Electron

III-V semiconductor films nucleate by the Stranski-Krastanov (SK) mechanism on Si substrates. Many of the extended defects present in the films are believed to result from the island formation and coalescence stage of SK growth. We have recently shown that low (-30 eV) energy, high flux (4 ions per deposited atom), Ar ion irradiation during nucleation of III-V semiconductors on Si substrates prolongs the 1ayer-by-layer stage of SK nucleation, leading to a decrease in extended defect densities. Furthermore, the epitaxial temperature was reduced by >100°C due to ion irradiation. The effect of ion bombardment on the nucleation mechanism was explained as being due to ion-induced dissociation of three-dimensional islands and ion-enhanced surface diffusion.For the case of InAs grown at 380°C on Si(100) (11% lattice mismatch), where island formation is expected after ≤ 1 monolayer (ML) during molecular beam epitaxy (MBE), in-situ reflection high-energy electron diffraction (RHEED) showed that 28 eV Ar ion irradiation prolonged the layer-by-layer stage of SK nucleation up to 10 ML. Otherion energies maintained layer-by-layer growth to lesser thicknesses. The ion-induced change in nucleation mechanism resulted in smoother surfaces and improved the crystalline perfection of thicker films as shown by transmission electron microscopy and X-ray rocking curve studies.

HIGH ENERGY SYNCHROTRON X-RAY MICROSPECTROSCOPY FOR GEOCHEMICAL CHARACTERIZATION OF TERRESTRIAL AND EXTRATERRESTRIAL SAMPLES

2016 ◽  
Author(s):  
Antonio Lanzirotti ◽  
◽  
Stephen R. Sutton ◽  
Matt Newville ◽  
Jeffrey P. Fitts ◽  
...  
Keyword(s):  
High Energy ◽  
Geochemical Characterization ◽  
X Ray

scholarly journals Performance Analysis of Indentation Punch on High Energy Lithium Pouch Cells and Simulated Model Improvement

Polymers ◽  
2021 ◽  
Vol 13 (12) ◽  
pp. 1971
Author(s):  
Lihua Ye ◽  
Muhammad Muzamal Ashfaq ◽  
Aiping Shi ◽  
Syyed Adnan Raheel Shah ◽  
Yefan Shi
Keyword(s):  
Short Circuit ◽  
Lithium Ion ◽  
Mechanical Deformation ◽  
High Energy ◽  
State Of Charge ◽  
Punch Test ◽  
Short Course ◽  
Model Cell ◽  
The Impact

In this research, the aim relates to the material characterization of high-energy lithium-ion pouch cells. The development of appropriate model cell behavior is intended to simulate two scenarios: the first is mechanical deformation during a crash and the second is an internal short circuit in lithium-ion cells during the actual effect scenarios. The punch test has been used as a benchmark to analyze the effects of different state of charge conditions on high-energy lithium-ion battery cells. This article explores the impact of three separate factors on the outcomes of mechanical punch indentation experiments. The first parameter analyzed was the degree of prediction brought about by experiments on high-energy cells with two different states of charge (greater and lesser), with four different sizes of indentation punch, from the cell’s reaction during the indentation effects on electrolyte. Second, the results of the loading position, middle versus side, are measured at quasi-static speeds. The third parameter was the effect on an electrolyte with a different state of charge. The repeatability of the experiments on punch loading was the last test function analyzed. The test results of a greater than 10% state of charge and less than 10% state of charge were compared to further refine and validate this modeling method. The different loading scenarios analyzed in this study also showed great predictability in the load-displacement reaction and the onset short circuit. A theoretical model of the cell was modified for use in comprehensive mechanical deformation. The overall conclusion found that the loading initiating the cell’s electrical short circuit is not instantaneously instigated and it is subsequently used to process the development of a precise and practical computational model that will reduce the chances of the internal short course during the crash.

scholarly journals Development and characterization of Nb3Sn/Al2O3 superconducting multilayers for particle accelerators

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Chris Sundahl ◽  
Junki Makita ◽  
Paul B. Welander ◽  
Yi-Feng Su ◽  
Fumitake Kametani ◽  
...  
Keyword(s):  
High Performance ◽  
High Energy ◽  
Particle Accelerators ◽  
Quality Factors ◽  
Critical Fields ◽  
Linear Accelerators ◽  
Cross Sectional ◽  
Low Field ◽  
Superconducting Radio Frequency

AbstractSuperconducting radio-frequency (SRF) resonator cavities provide extremely high quality factors > 1010 at 1–2 GHz and 2 K in large linear accelerators of high-energy particles. The maximum accelerating field of SRF cavities is limited by penetration of vortices into the superconductor. Present state-of-the-art Nb cavities can withstand up to 50 MV/m accelerating gradients and magnetic fields of 200–240 mT which destroy the low-dissipative Meissner state. Achieving higher accelerating gradients requires superconductors with higher thermodynamic critical fields, of which Nb3Sn has emerged as a leading material for the next generation accelerators. To overcome the problem of low vortex penetration field in Nb3Sn, it has been proposed to coat Nb cavities with thin film Nb3Sn multilayers with dielectric interlayers. Here, we report the growth and multi-technique characterization of stoichiometric Nb3Sn/Al2O3 multilayers with good superconducting and RF properties. We developed an adsorption-controlled growth process by co-sputtering Nb and Sn at high temperatures with a high overpressure of Sn. The cross-sectional scanning electron transmission microscope images show no interdiffusion between Al2O3 and Nb3Sn. Low-field RF measurements suggest that our multilayers have quality factor comparable with cavity-grade Nb at 4.2 K. These results provide a materials platform for the development and optimization of high-performance SIS multilayers which could overcome the intrinsic limits of the Nb cavity technology.

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