Evolution of Sputtered HfO2 Thin Films Upon Annealing

AbstractWe investigated the evolution of the physical and electrical properties of HfO2 thin films deposited by the reactive DC magnetron sputtering method on the (100) silicon substrate upon annealing. The HfO2 thin films deposited at room temperature were amorphous, while the films after annealing were poly crystalline. The crystallization temperature of the HfO2 thin films was dependent on the annealing methods (RTP or Furnace) and ambient (nitrogen or oxygen). The microstructures of HfO2 thin gate oxides of Tox <15A thick were analyzed by HRTEM, XPS and XRD. We also focused on the interfacial layer between HfO2 thin films and silicon substrates. Due to its high oxygen diffusivity, any annealing led to oxygen diffusion rapidly through the HfO2 films. The EOT increased upon annealing due to the increased SiO2-containing layer. The HfO2 thin films deposited at room temperature have the undesirable interfacial states due to the surface damage by sputtering. We found that the HfO2 thin films <15A thick were optimized by RTP or furnace annealing.

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Thermal annealing induced multiple phase in V/V2O5 alternating multilayer structure

International Journal of Modern Physics B ◽

10.1142/s0217979216502106 ◽

2016 ◽

Vol 30 (27) ◽

pp. 1650210 ◽

Cited By ~ 7

Author(s):

B. Ilahi ◽

M. Abdel-Rahman ◽

Z. Zaaboub ◽

M. F. Zia ◽

M. Alduraibi ◽

...

Keyword(s):

Thin Films ◽

Thermal Annealing ◽

Oxygen Diffusion ◽

Multilayer Structure ◽

Room Temperature ◽

Optical And Electrical Properties ◽

Film Resistance ◽

Dc Magnetron Sputtering ◽

Temperature Coefficient Of Resistance ◽

Multiple Phase

In this paper, we report on microstructural, optical and electrical properties of alternating multilayer of vanadium pentoxide (V2O5), 25 nm, and vanadium (V), 5 nm, thin films deposited at room temperature by radio frequency (RF) and DC magnetron sputtering, respectively. Raman and photoluminescence (PL) spectroscopy have been employed to investigate the effects of thermal annealing for 20, 30 and 40 min at 400[Formula: see text]C in Nitrogen (N2) atmosphere on the multiple phase formation and its impact on the film resistance and temperature coefficient of resistance (TCR). We demonstrate that the oxygen free annealing environment allows the formation of multiple phases including V2O5, V6O[Formula: see text] and VO2 through oxygen diffusion and consequent deficiency in V2O5 layer.

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Effect of Precursor Sol Ageing on Sol-Gel Derived Ruthenium Oxide Thin Films

MRS Proceedings ◽

10.1557/proc-606-211 ◽

1999 ◽

Vol 606 ◽

Cited By ~ 4

Author(s):

S. Bhaskar ◽

S. B. Majumder ◽

P. S. Dobal ◽

R. S. Katiyar ◽

A. L. M. Cruz ◽

...

Keyword(s):

Thin Films ◽

Room Temperature ◽

Annealing Temperature ◽

Sol Gel ◽

Ruthenium Oxide ◽

Precursor Solution ◽

Silicon Substrates ◽

Solution Deposition ◽

Precursor Material ◽

Afm Analysis

AbstractIn the present work we have optimized the process parameters to yield homogeneous, smooth ruthenium oxide (RuO2) thin films on silicon substrates by a solution deposition technique using RuCl3.×.H2O as the precursor material. Films were annealed in a temperature range of 300°C to 700°C, and it was found that RuO2 crystallizes at a temperature as low as 400°C. The crystallinity of the films improves with increased annealing temperature and the resistivity decreases from 4.86µΩ-m (films annealed at 400°C) to 2.94pµΩ (films annealed at 700°C). Ageing of the precursor solution has a pronounced effect on the measured resistivities of RuO2 thin films. It was found that the measured room temperature resistivities increases from 2.94µΩ-m to 45.7µΩ-m when the precursor sol is aged for aged 60 days. AFM analysis on the aged films shows that the grain size and the surface roughness of the annealed films increase with the ageing of the precursor solution. From XPS analysis we have detected the presence of non-transformed RuCl3 in case of films prepared from aged solution. We propose, that solution ageing inhibits the transformation of RuCl3 to RuO2 during the annealing of the films. The deterioration of the conductivity with solution ageing is thought to be related with the chloride contamination in the annealed films.

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Room-temperature oxygen diffusion in a-axis normal YBa2Cu3Ox thin films

Physica C Superconductivity ◽

10.1016/0921-4534(95)00311-8 ◽

1995 ◽

Vol 249 (3-4) ◽

pp. 289-292 ◽

Cited By ~ 3

Author(s):

B. Pashmakov ◽

K. Zhang ◽

H.M. Jaeger ◽

P. Tiwari ◽

X.D. Wu

Keyword(s):

Thin Films ◽

Oxygen Diffusion ◽

Room Temperature

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Growth Front Roughening of Room Temperature Deposited Oligomer Thin Films

MRS Proceedings ◽

10.1557/proc-648-p6.20 ◽

2000 ◽

Vol 648 ◽

Author(s):

D. Tsamouras ◽

G. Palasantzas ◽

J. Th. M. De Hosson ◽

G. Hadziioannou

Keyword(s):

Thin Films ◽

Film Thickness ◽

Room Temperature ◽

Growth Front ◽

Silicon Substrates ◽

Height Distribution ◽

Force Microscopy ◽

Atomic Force ◽

Roughness Amplitude ◽

Non Gaussian

AbstractGrowth front scaling aspects are investigated for PPV-type oligomer thin films vapor- deposited onto silicon substrates at room temperature. For film thickness d~15-300 nm, commonly used in optoelectronic devices, correlation function measurement by atomic force microscopy yields roughness exponents in the range H=0.45±0.04, and an rms roughness amplitude which evolves with film thickness as a power law σ∝ dβ with β=0.28±0.05. The non-Gaussian height distribution and the measured scaling exponents (H and β) suggest a roughening mechanism close to that described by the Kardar-Parisi-Zhang scenario.

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Properties of Nanostructure Bismuth Telluride Thin Films Using Thermal Evaporation

Journal of Nanotechnology ◽

10.1155/2017/4276506 ◽

2017 ◽

Vol 2017 ◽

pp. 1-4 ◽

Cited By ~ 5

Author(s):

Swati Arora ◽

Vivek Jaimini ◽

Subodh Srivastava ◽

Y. K. Vijay

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Bismuth Telluride ◽

Room Temperature ◽

Thermal Evaporation ◽

Silicon Substrates ◽

X Ray Diffraction ◽

Thermal Evaporation Method ◽

X Ray ◽

Scanning Electron

Bismuth telluride has high thermoelectric performance at room temperature; in present work, various nanostructure thin films of bismuth telluride were fabricated on silicon substrates at room temperature using thermal evaporation method. Tellurium (Te) and bismuth (Bi) were deposited on silicon substrate in different ratio of thickness. These films were annealed at 50°C and 100°C. After heat treatment, the thin films attained the semiconductor nature. Samples were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM) to show granular growth.

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Highly Sensitive InOxOzone Sensing Films on Flexible Substrates

Journal of Sensors ◽

10.1155/2009/727893 ◽

2009 ◽

Vol 2009 ◽

pp. 1-5 ◽

Cited By ~ 9

Author(s):

G. Kiriakidis ◽

K. Moschovis ◽

I. Kortidis ◽

R. Skarvelakis

Keyword(s):

Thin Films ◽

Gas Sensors ◽

Air Conditioning ◽

Room Temperature ◽

Growth Conditions ◽

Flexible Substrates ◽

Dc Magnetron Sputtering ◽

Surface Cracking ◽

Highly Sensitive ◽

Extended Surface

InOxthin films with a thickness of the order of 100 nm were grown by dc magnetron sputtering on glass, Si and flexible (PET) substrates. The electrical conductivity ofInOxthin films exhibited a change of two orders of magnitude during photoreduction with ultraviolet light and subsequent oxidation in ozone concentrations from 2370 to 15 ppb, at room temperature. Optical transparency of over 85% for all substrates was maintained. Film structural and ozone sensing properties were analyzed. Surface morphology investigations carried out by SEM for films on PET substrates showed extended surface cracking for bending angles beyond40∘. Optimization of growth conditions has led to films with extremely low detection levels for ozone down to 15 ppb at room temperature, demonstrating the wide prospective of utilizing these metal oxides as gas sensors on flexible substrates for a variety of automotive and air-conditioning applications.

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Room temperature DC magnetron sputtering deposition of hydrogenated aluminum doped zinc oxide thin films on polyethylene terephthalate substrates

Materials Letters ◽

10.1016/j.matlet.2013.05.063 ◽

2013 ◽

Vol 106 ◽

pp. 363-365 ◽

Cited By ~ 10

Author(s):

Ke Zhu ◽

Ye Yang ◽

Tiefeng Wei ◽

Ruiqin Tan ◽

Ping Cui ◽

...

Keyword(s):

Thin Films ◽

Zinc Oxide ◽

Magnetron Sputtering ◽

Polyethylene Terephthalate ◽

Room Temperature ◽

Dc Magnetron Sputtering ◽

Oxide Thin Films ◽

Sputtering Deposition ◽

Aluminum Doped Zinc Oxide

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Effect of Laser Fluence on the Properties of Sm1-XNd X NiO3 Thin Films Deposited by KrF Laser Ablation

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.227.72 ◽

2011 ◽

Vol 227 ◽

pp. 72-75

Author(s):

Slimane Lafane ◽

Tahar Kerdja ◽

Samira Abdelli-Messaci ◽

Smail Malek ◽

Malik Maaza

Keyword(s):

Thin Films ◽

Laser Fluence ◽

Room Temperature ◽

Silicon Substrates ◽

X Ray ◽

Substrate Distance ◽

Laser Fluences ◽

Krf Excimer Laser ◽

Rotating Target ◽

Scanning Electron

In this contribution we study the effect of the laser fluence on the stoichiometry, morphology and density of Sm1-xNdxNiO3 thin films. The latter were grown by a KrF excimer laser (λ = 248 nm, τ = 25 ns) ablation of a rotating target onto unheated (100) silicon substrates for 9000 pulses at different laser fluences into vacuum. The target used was a mixture of samarium, neodymium and nickel oxides. The relative ratio of neodymium (x = 0.45) is set to have a transition temperature close to room temperature (TMI = 310 K). The target-substrate distance was maintained at 4 cm. The composition and the morphology of the deposited layers were analysed by energy dispersion X-ray spectroscopy (EDX) and scanning electron microscope (SEM) respectively. It was found that films properties depend strongly on the laser fluence. The EDX measurements revealed that the laser fluence must be higher than 1 Jcm-2 for a congruent evaporation. However, even at this condition, the films were deficiency in oxygen. The morphology study showed that the films surface was widely contaminated by droplets for fluences superior to 2 Jcm-2. Also, it was found that by increasing laser fluence the films density increases and reach a plateau at 1.3 Jcm-2. According to all those elements, the laser fluence was set to be in the range of 1.3 – 2 Jcm-2.

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Electrical Properties of Silicon Nitride Thin Films Fabricated by ECR PECVD at Room Temperature

MRS Proceedings ◽

10.1557/proc-284-9 ◽

1992 ◽

Vol 284 ◽

Cited By ~ 1

Author(s):

Yoo-Chan Jeon ◽

Hoyoung Lee ◽

Seung-Ki Joo

Keyword(s):

Thin Films ◽

Silicon Nitride ◽

Electrical Properties ◽

Room Temperature ◽

Crystalline Silicon ◽

Silicon Substrates ◽

Trap States ◽

Dominant Conduction Mechanism ◽

Frenkel Emission ◽

New Interpretation

ABSTRACTSilicon nitride thin films were deposited on single crystalline silicon substrates at room temperature by ECR PECVD with SiH4 and N2 as source gases and the electrical properties were analyzed. The dominant conduction mechanism in a high field was Poole-Frenkel emission. A ledge in I-V curve was observed in the first voltage ramp and it was found to originate from the field reduction at the injecting electrode due to the charge trapped in deep traps in the film. It also turned out that the ledge is a characteristic of monopolar conduction. A new interpretation of the current at low field — tunneling into trap states — was proposed and the current variations according to the field and temperature could be well explained.

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