Effect of Laser Fluence on the Properties of Sm1-XNd X NiO3 Thin Films Deposited by KrF Laser Ablation

2011 ◽  
Vol 227 ◽  
pp. 72-75
Author(s):  
Slimane Lafane ◽  
Tahar Kerdja ◽  
Samira Abdelli-Messaci ◽  
Smail Malek ◽  
Malik Maaza
Keyword(s):  
Thin Films ◽  
Laser Fluence ◽  
Room Temperature ◽  
Silicon Substrates ◽  
X Ray ◽  
Substrate Distance ◽  
Laser Fluences ◽  
Krf Excimer Laser ◽  
Rotating Target ◽  
Scanning Electron

In this contribution we study the effect of the laser fluence on the stoichiometry, morphology and density of Sm1-xNdxNiO3 thin films. The latter were grown by a KrF excimer laser (λ = 248 nm, τ = 25 ns) ablation of a rotating target onto unheated (100) silicon substrates for 9000 pulses at different laser fluences into vacuum. The target used was a mixture of samarium, neodymium and nickel oxides. The relative ratio of neodymium (x = 0.45) is set to have a transition temperature close to room temperature (TMI = 310 K). The target-substrate distance was maintained at 4 cm. The composition and the morphology of the deposited layers were analysed by energy dispersion X-ray spectroscopy (EDX) and scanning electron microscope (SEM) respectively. It was found that films properties depend strongly on the laser fluence. The EDX measurements revealed that the laser fluence must be higher than 1 Jcm-2 for a congruent evaporation. However, even at this condition, the films were deficiency in oxygen. The morphology study showed that the films surface was widely contaminated by droplets for fluences superior to 2 Jcm-2. Also, it was found that by increasing laser fluence the films density increases and reach a plateau at 1.3 Jcm-2. According to all those elements, the laser fluence was set to be in the range of 1.3 – 2 Jcm-2.

scholarly journals Properties of Nanostructure Bismuth Telluride Thin Films Using Thermal Evaporation

2017 ◽  
Vol 2017 ◽  
pp. 1-4 ◽  
Author(s):  
Swati Arora ◽  
Vivek Jaimini ◽  
Subodh Srivastava ◽  
Y. K. Vijay
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Bismuth Telluride ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Scanning Electron

Bismuth telluride has high thermoelectric performance at room temperature; in present work, various nanostructure thin films of bismuth telluride were fabricated on silicon substrates at room temperature using thermal evaporation method. Tellurium (Te) and bismuth (Bi) were deposited on silicon substrate in different ratio of thickness. These films were annealed at 50°C and 100°C. After heat treatment, the thin films attained the semiconductor nature. Samples were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM) to show granular growth.

Study of Nanostructure Inclusion Effects on the Thermoelectric Behavior of Ca3Co4O9 Thin Films Grown by Pulsed Laser Deposition

2010 ◽  
Vol 1267 ◽  
Author(s):  
Evan Lyle Thomas ◽  
Xueyan Song ◽  
Yonggao Yan ◽  
Joshua Martin ◽  
Winnie Wong-Ng ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Axis Orientation ◽  
X Ray ◽  
Si Substrates ◽  
Factor Α ◽  
Scanning Electron

AbstractThe influence of incorporating nanoparticulate additions into Ca3Co4O9 (CCO) thin films prepared by pulsed laser deposition using composite targets of CCO and CCO + 3wt% BaZrO3 (BZO) on Si and LaAlO3 substrates is investigated. X-ray data and high-resolution scanning electron microscopy reveal preferred c-axis orientation of the films deposited on Si substrates with the formation of nanoparticles between ∼ 10 – 50 nm. Preliminary thermoelectric behavior shows an enhancement of the power factor α2/ρ at room temperature. The microstructure and thermoelectric behavior of the CCO films are compared to the BZO-doped films.

Surface Interaction Between Wf6 and GaAs Under UV Laser Illumination

1992 ◽  
Vol 282 ◽  
Author(s):  
M. Tabbal ◽  
R. Izquierdo ◽  
M. Meunier ◽  
A. Yelon
Keyword(s):  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Normal Incidence ◽  
Uv Laser ◽  
X Ray ◽  
Laser Illumination ◽  
Laser Fluences ◽  
A Cell ◽  
Krf Excimer Laser ◽  
Laser Cvd

ABSTRACTWe have studied laser-CVD of W on GaAs by X-ray Photoelectron Spectroscopy (XPS). Deposition of W is obtained by irradiating GaAs samples with a KrF excimer laser at normal incidence to the substrate, in a cell containing WF6 mixed with H2 and Ar. We have previously shown that WF6 and GaAs react at room temperature even without laser illumination. GaF3 formation and a loss of As were detected at the surface of the samples by XPS. At laser fluences of 50mJ/cm2, this reaction appears to be enhanced by laser heating of the substrate, but no metallic W is formed. At laser fluences of 67 mJ/cm2, metallic W begins to be deposited, through a pyrolytic dissociation reaction with the substrate.

scholarly journals Synthesis, morphology and specific magnetization of the electrodeposited Zn-Ni-P thin films on copper substrate from non-cyanide electrolyte

2013 ◽  
Vol 11 (7) ◽  
pp. 1137-1149 ◽  
Author(s):  
Ana Popescu ◽  
Kazimir Yanuskevich ◽  
Olga Demidenko ◽  
Jose Calderon Moreno ◽  
Elena Neacşu ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Copper Substrate ◽  
Thin Layers ◽  
Specific Magnetization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Potential Use ◽  
Scanning Electron

AbstractThin films of Zn-Ni-P on a copper substrate were synthesized by electrodeposition from chloride baths. It was found that the diffraction reflections of the crystal structure of Zn-Ni-P thin layers occur at thicknesses d ≥ 5 µm. The X-ray diffraction studies results confirm the formation in the Zn-Ni-P films of ZnNi10P3 compound. The morphology of the obtained films was analyzed by Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray Spectrometry (EDS). The films are continuous and have a typical topography with many homogeneous globular features. EDS confirmed the formation of Zn-Ni-P coating only in 2 samples with Zn:Ni:P atomic ratios of 1:8:4 and 4:8:3, respectively. X-ray Photoelectron Spectroscopy (XPS) revealed the chemistry and the thickness of the studied thin films. At room temperature and thickness d ≥ 5 µm the investigated thin layers exhibit high values of the specific magnetizations in the range (25–37) A m2 kg−1, leading to the potential use in devices, appliances and electronics. The Curie temperature values of the synthesized Zn-Ni-P films were determined. It was found that by heating Zn-Ni-P thin layers of thicknesses d ≥ 5 µm up to a temperature T=900 K an interaction was detected with the copper substrate leading to a lower specific magnetization.

scholarly journals Photoconductivity of ZnS Thin Films Deposited by Solution-Processing Techniques

2021 ◽  
pp. 1-3
Author(s):  
Jafarli Rufat ◽  
Keyword(s):  
Thin Films ◽  
Composite Films ◽  
Vital Role ◽  
Solution Processing ◽  
Silicon Substrates ◽  
Ambient Conditions ◽  
X Ray Diffraction ◽  
X Ray ◽  
Processing Techniques ◽  
Scanning Electron

We have explored various solution- processing techniques to produce ZnS thin films on conducting (ITO) and silicon substrates along with ZnS-porous silicon composite films. All these samples obtained from different methods and chemical recipes were annealed under fixed ambient conditions and characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), and ultraviolet photocurrent response. Various characterizations reveal that the fabrication conditions and intrinsic defects of ZnS play a vital role in optoelectronic performance.

Effect of Annealing temperature on the Structural and Magnetic Properties of TbxY3-xFe5O12(x = 0.0, 1.0, 2.0) Thin Films Prepared by Sol-Gel Process

2012 ◽  
Vol 501 ◽  
pp. 236-241 ◽  
Author(s):  
Ftema W. Aldbea ◽  
Noor Bahyah Ibrahim ◽  
Mustafa Hj. Abdullah ◽  
Ramadan E. Shaiboub
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Vibrating Sample Magnetometer ◽  
X Ray ◽  
Garnet Phase ◽  
Sol Gel Process ◽  
Amorphous Structures

Thin films nanoparticles TbxY3-xFe5O12 (x=0.0, 1.0, 2.0) were prepared by the sol-gel process followed by annealing process at various annealing temperatures of 700° C, 800° C and 900° C in air for 2 h. The results obtained from X-ray diffractometer (XRD) show that the films annealed below 900°C exhibit peaks of garnet mixed with small amounts of YFeO3 and Fe2O3. Pure garnet phase has been detected in the films annealed at 900°C. Before annealing the films show amorphous structures. The particles sizes measurement using the field emission scanning electron microscope (FE-SEM) showed that the particles sizes increased as the annealing temperature increased. The magnetic properties were measured at room temperature using the vibrating sample magnetometer (VSM). The saturation magnetization (Ms) of the films also increased with the annealing temperature. However, different behavior of coercivity (Hc) has been observed as the annealing temperature was increased.

Studies on Magnetron-Sputtered NiO/Si3N4 Thin Films

2018 ◽  
Vol 17 (03) ◽  
pp. 1760039
Author(s):  
K. M. Dhanisha ◽  
M. Manoj Christopher ◽  
M. Abinaya ◽  
P. Deepak Raj ◽  
M. Sridharan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Smooth Surface ◽  
Deposition Time ◽  
Si Substrate ◽  
X Ray ◽  
Coating Time ◽  
Deposited Films ◽  
Nio Films ◽  
Scanning Electron

The present work deals with NiO/Si3N4 layers formed by depositing nickel oxide (NiO) thin films over silicon nitrate (Si3N[Formula: see text] thin films. NiO films were coated on Si3N4-coated Si substrate using magnetron sputtering method by changing duration of coating time and were analyzed using X-ray diffractometer, field emission-scanning electron microscopy, UV–Vis spectrophotometer and four-point probe method to study the influence of thickness on physical properties. Crystallinity of the deposited films increases with increase in thickness. All films exhibited spherical-like structure, and with increase in deposition time, grains are coalesced to form smooth surface morphology. The optical bandgap of NiO films was found to decrease from 3.31[Formula: see text]eV to 3.22[Formula: see text]eV with upsurge in the thickness. The film deposited for 30[Formula: see text]min exhibits temperature coefficient resistance of [Formula: see text]1.77%/[Formula: see text]C as measured at 80[Formula: see text]C.

Structure and Conductivity of Iodine-Doped C60 Thin Films

1994 ◽  
Vol 359 ◽  
Author(s):  
Jun Chen ◽  
Haiyan Zhang ◽  
Baoqiong Chen ◽  
Shaoqi Peng ◽  
Ning Ke ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Room Temperature ◽  
Conductivity Measurements ◽  
X Ray Diffraction ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
X Ray ◽  
Thermally Activated ◽  
Order Of Magnitude

ABSTRACTWe report here the results of our study on the properties of iodine-doped C60 thin films by IR and optical absorption, X-ray diffraction, and electrical conductivity measurements. The results show that there is no apparent structural change in the iodine-doped samples at room temperature in comparison with that of the undoped films. However, in the electrical conductivity measurements, an increase of more that one order of magnitude in the room temperature conductivity has been observed in the iodine-doped samples. In addition, while the conductivity of the undoped films shows thermally activated temperature dependence, the conductivity of the iodine-doped films was found to be constant over a fairly wide temperature range (from 20°C to 70°C) exhibiting a metallic feature.

ROOM TEMPERATURE PHOTOLUMINESCENCE OF POLYCRYSTALLINE SIC PREPARED FROM CARBON-SATURATED SI MELT

2002 ◽  
Vol 16 (06n07) ◽  
pp. 1047-1051
Author(s):  
JIANPING MA ◽  
ZHIMING CHEN ◽  
GANG LU ◽  
MINGBIN YU ◽  
LIANMAO HANG ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Uv Light ◽  
X Ray Diffraction ◽  
X Ray ◽  
Room Temperature Photoluminescence ◽  
Composition And Structure ◽  
Light Excitation ◽  
Scanning Electron

Intense photoluminescence (PL) has been observed at room temperature from the polycrystalline SiC samples prepared from carbon-saturated Si melt at a temperature ranging from 1500 to 1650°C. Composition and structure of the samples have been confirmed by means of X-ray photoelectron spectroscopy, X-ray diffraction and scanning electron microscopy. PL measurements with 325 nm UV light excitation revealed that the room temperature PL spectrum of the samples consists of 3 luminescent bands, the peak energies of which are 2.38 eV, 2.77 eV and 3.06 eV, respectively. The 2.38 eV band is much stronger than the others. It is suggested that some extrinsic PL mechanisms associated with defect or interface states would be responsible to the intensive PL observed at room temperature.

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