Evolution of nucleation sites and bubble precursors in silicon as a function of helium implanted dose

2002 ◽  
Vol 719 ◽  
Author(s):  
Changlong Liu ◽  
R. Delamare ◽  
E. Ntsoenzok ◽  
G. Regula ◽  
B. Pichaud ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Dose Range ◽  
Nuclear Reaction Analysis ◽  
Extended Defects ◽  
Dislocation Loops ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Nucleation Sites ◽  
Dose Dependent ◽  
Subsequent Thermal Annealing

Abstract(111) oriented silicon samples were implanted at room temperature with 1.55 MeV 3He ions in the dose range of 5×1015 to 5×1016/cm2. Cross-sectional transmission electron microscopy (XTEM) was used to study the evolution of bubbles and extended defects during subsequent thermal annealing at 800°C and 900°C for 30min. The He desorption from bubbles and bubble precursors was measured by means of nuclear reaction analysis (NRA). TEM observations show that no bubbles were observed in Si implanted at doses lower than 1×1016/cm2, while a well-defined cavity band was formed after implantation at 5×1016/cm2 and subsequent thermal annealing. At the intermediary dose of 2×1016/cm2, however, the evolution of bubbles and extended defects is quite different. The bubbles prefer to nucleate in large planar clusters surrounded by a high density of dislocation loops emerging from them. The clusters of bubbles act as the sources of the dislocation loops. NRA measurements indicate that the He desorption behavior is also dose-dependent. The He desorption is achieved much faster in low dose implanted Si. The results are qualitatively discussed.

Shallow Junction Formation in As-Implanted Si by Low-Temperature Rapid Thermal Annealing

1989 ◽  
Vol 147 ◽  
Author(s):  
M. K. El-Ghor ◽  
S. J. Pennycook ◽  
R. A. Zuhr
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Dislocation Loops ◽  
Cross Sectional ◽  
Dopant Activation ◽  
Transmission Electron ◽  
Shallow Junctions ◽  
Surface Image ◽  
Long Time ◽  
Short Time

AbstractShallow junctions were formed in single-crystal Si(100) by implantation of As at energies between 2 and 17.5 keV followed by conventional furnace annealing or by rapid thermal annealing (RTA). Cross-sectional transmission electron microscopy (XTEM) showed that defect-free shallow junctions could be formed at temperatures as low as 700 °C by RTA, with about 60% dopant activation. From a comparison of short-time and long-time annealing, it is proposed that surface image forces are responsible for the efficient removal of end-of-range (EOR) dislocation loops

Annealing Of Radiation Damage in Tungsten

1970 ◽  
Vol 28 ◽  
pp. 412-413
Author(s):  
Robert C. Rau ◽  
John Moteff
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Radiation Damage ◽  
Thermal Annealing ◽  
Neutron Fluence ◽  
Dislocation Loops ◽  
Defect Clusters ◽  
Polycrystalline Tungsten ◽  
Transmission Electron ◽  
Radiation Induced

Transmission electron microscopy has been used to study the thermal annealing of radiation induced defect clusters in polycrystalline tungsten. Specimens were taken from cylindrical tensile bars which had been irradiated to a fast (E > 1 MeV) neutron fluence of 4.2 × 1019 n/cm2 at 70°C, annealed for one hour at various temperatures in argon, and tensile tested at 240°C in helium. Foils from both the unstressed button heads and the reduced areas near the fracture were examined.Figure 1 shows typical microstructures in button head foils. In the unannealed condition, Fig. 1(a), a dispersion of fine dot clusters was present. Annealing at 435°C, Fig. 1(b), produced an apparent slight decrease in cluster concentration, but annealing at 740°C, Fig. 1(C), resulted in a noticeable densification of the clusters. Finally, annealing at 900°C and 1040°C, Figs. 1(d) and (e), caused a definite decrease in cluster concentration and led to the formation of resolvable dislocation loops.

Observation of the Wurtzite Phase in OMVPE Grown ZnSe/GaAs: Effect on Implantation and Rapid Thermal Annealing

1989 ◽  
Vol 147 ◽  
Author(s):  
K. S. Jones ◽  
J. Yu ◽  
P. D. Lowen ◽  
D. Kisker
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Electrical Transport ◽  
High Resistivity ◽  
Ion Milling ◽  
Electrical Transport Properties ◽  
Wurtzite Phase ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Diffraction Patterns

AbstractTransmission electron diffraction patterns of cross-sectional TEM samples of OMVPE ZnSe on GaAs indicate the existence of the hexagonal wurtzite phase in the epitaxial layers. The orientation relationship is (0002)//(111); (1120)//(220). Etching studies indicate the phase is internal not ion milling induced. The average wurtzite particle size is 80Å-120Å. Because of interplanar spacing matches it is easily overlooked. Electrical property measurements show a high resistivity (1010ω/square) which drops by four orders of magnitude upon rapid thermal annealing between 700°C and 900 °C for 3 sec. Implantation of Li and N have little effect on the electrical transport properties. The Li is shown to have a high diffusivity, a solid solubility of ≈1016/cm3 at 800°C and getters to the ZnSeA/aAs interface.

Evolution of Photoluminescence Mechanisms of Si+-Implanted SiO2 Films with Thermal Annealing

2008 ◽  
Vol 8 (7) ◽  
pp. 3555-3560 ◽  
Author(s):  
L. Ding ◽  
T. P. Chen ◽  
Y. Liu ◽  
C. Y. Ng ◽  
M. Yang ◽  
...  
Keyword(s):  
Band Structure ◽  
Thermal Annealing ◽  
Annealing Temperature ◽  
Energy Gap ◽  
The Other ◽  
Extended Defects ◽  
Band Transition ◽  
Luminescent Centers ◽  
Subsequent Thermal Annealing ◽  
Si Ion Implantation

The information of band structure of silicon nanocrystal (nc-Si) embedded in SiO2 thin films synthesized by Si ion implantation and subsequent thermal annealing at various temperatures has been obtained from spectroscopy ellipsometric (SE) analysis. The indirect band structure and the energy gap of the nc-Si are not affected by the annealing. In contrast, the photoluminescence (PL) spectra show a continuous evolution with the annealing. Six PL bands located at 415, 460, 520, 630, 760, and 845 nm, respectively, have been observed depending on the annealing temperature. The annealing at 1100 °C yields the strongest PL band at 760 nm (∼1.63 eV) with the intensity much higher than that of all the other PL bands. Based on the knowledge of the band structure, the 760 nm-PL band could be attributed to the indirect band-to-band transition of the nc-Si assisted by the Si—O vibration of the nc-Si/SiO2 interface with the stretching frequency of ∼1083 cm−1 (&sim0.13 eV). On the other hand, the first four PL bands mentioned above could originate from different extended defects in the oxide matrix, while the 845-nm PL band could be related to the interface luminescent centers.

Effect of Self-Interstitials – Nanovoids Interaction on Two-Dimensional Diffusion and Activation of Implanted B in Si

2005 ◽  
Vol 108-109 ◽  
pp. 395-400 ◽  
Author(s):  
Filippo Giannazzo ◽  
E. Bruno ◽  
S. Mirabella ◽  
G. Impellizzeri ◽  
E. Napolitani ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Device Fabrication ◽  
Electrical Activation ◽  
High Dose ◽  
Dimensional Diffusion ◽  
Transmission Electron ◽  
Sio2 Mask ◽  
The Impact ◽  
Subsequent Thermal Annealing

In this work, we investigate the effect of performing a high dose 20 keV He+ implant before the implantation of B at low energy (3 keV) in silicon and the subsequent thermal annealing at 800 °C. The implants were performed in laterally confined regions defined by opening windows in a SiO2 mask, in order to evidence the impact on a realistic configuration used in device fabrication. High resolution quantitative scanning capacitance microscopy (SCM) combined with cross-section transmission electron microscopy (XTEM) allowed to clarify the role of the voids distribution produced during the thermal annealing on the diffusion and electrical activation of implanted B in Si. Particular evidence was given to the effect of the uniform nanovoids distribution, which forms in the region between the surface and the buried cavity layer.

Evolution of Epitaxial SixGei1-x Alloys on Si(100) During Thermal Annealing a-Ge/Au Bilayers Deposited on Si Substrate

1992 ◽  
Vol 280 ◽  
Author(s):  
Z. Ma ◽  
L. H. Allen
Keyword(s):  
Single Crystal ◽  
Thermal Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Growth Dynamics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

ABSTRACTSolid phase epitaxial (SPE) growth of SixGei1-x alloys on Si (100) was achieved by thermal annealing a-Ge/Au bilayers deposited on single crystal Si substrate in the temperature range of 280°C to 310°C. Growth dynamics was investigated using X-ray diffraction, Rutherford backscattering spectrometry, and cross-sectional transmission electron microscopy. Upon annealing, Ge atoms migrate along the grain boundaries of polycrystalline Au and the epitaxial growth initiates at localized triple points between two Au grains and Si substrate, simultaneously incorporating a small amount of Si dissolved in Au. The Au is gradually displaced into the top Ge layer. Individual single crystal SixGei1-x islands then grow laterally as well as vertically. Finally, the islands coalesce to form a uniform layer of epitaxial SixGe1-x alloy on the Si substrate. The amount of Si incorporated in the final epitaxial film was found to be dependent upon the annealing temperature.

scholarly journals Incorporation of Iron Cations Into Epitaxial Sapphire Thin Films by CO-Evaporation and Subsequent Thermal Annealing

1994 ◽  
Vol 341 ◽  
Author(s):  
Ning Yu ◽  
Harriet Kung ◽  
Michael Nastasi ◽  
DeQuan Li
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Thermal Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Ultra Violet ◽  
Cation Sublattice ◽  
Epitaxial Relationship ◽  
Cross Sectional ◽  
Simple Method ◽  
Subsequent Thermal Annealing

AbstractIron-doped sapphire thin films have been successfully epitaxially grown onto sapphire single crystal substrates by electron beam deposition and subsequent thermal annealing. Amorphous A12O3 thin films, about 280–390 nm thick, cation doped with iron have been deposited on [0001] oriented sapphire substrates. Iron doping with cation concentrations (a ratio of Fe content to total cation content) up to 5 at.% can be incorporated into the octahedral sites of Al-cation sublattice during the epitaxial regrowth process at 1000–1400 C, as determined by Rutherford Backscattering Spectrometry and ion channeling measurements. Cross-sectional Transmission Electron Microscopy shows the presence of two distinct regions in the annealed films. One exhibits the epitaxial relationship with the sapphire substrate and the second region has amorphous type of contrast. External optical transmittance measurements in the ultra violet and visible light range have exhibited the absorption associated with Fe3+. This study has demonstrated a simple method of incorporating dopants into single crystal sapphire, which has potential in the fabrications of thin film planar optical waveguiles.

Stability of Heavily Doped Si Formed by As+ Implantation and Rapid Thermal Annealing

1985 ◽  
Vol 52 ◽  
Author(s):  
Muhammad Z. Numan ◽  
Z. H. Lu ◽  
W. K. Chu ◽  
D. Fathy ◽  
J. J. Wortman
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Thermal Annealing ◽  
Dislocation Loops ◽  
Sheet Resistivity ◽  
Furnace Annealing ◽  
Transmission Electron ◽  
Heavily Doped ◽  
Sheet Resistance Measurement ◽  
Short Time

ABSTRACTDeactivation of ion implanted and rapid thermal annealed (RTA) metastable arsenic in silicon during subsequent furnace annealing has been studied by sheet resistance measurement, Rutherford backs cat t ering/ channeling (RBS), and transmission electron microscopy (TEM). Following RTA, thermal annealing induces deactivation of the dopant which increases the sheet resistivity monotonically with temperature for a very short time, Dislocation loops are formed near the peak of As concentration at post-anneal temperatures of 750°C or higher, where deactivation rate is fast. At lower temperatures deactivation is accompanied by displacement of As atoms, possibly forming clusters.

Defects and Phase Change Induced by Giant Electronic Excitations With GeV Ions And 30MeV Cluster Beam

1996 ◽  
Vol 439 ◽  
Author(s):  
P. Thevenard ◽  
M. Beranger ◽  
B. Canut ◽  
S. M. M. Ramos ◽  
N. Bonardi ◽  
...  
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Electronic Energy ◽  
Extended Defects ◽  
Electronic Excitations ◽  
Dislocation Loops ◽  
Nuclear Collisions ◽  
Transmission Electron ◽  
F Center ◽  
Different Temperatures ◽  
Solid State Parameters

AbstractMgO and LiNbO 3 single crystals were bombarded with GeV swift heavy ions (Pb, Gd) and 30MeV C60 clusters to study the damage production induced by giant electronic processes at stopping power up to 100keV/nm. The defect creation was characterized by optical absorption, transmission electron microscopy (TEM) and Rutherford backscattering spectrometry in channeling geometry (RBS-C). In MgO point defects (F type centers) and extended defects (dislocation loops) were created by ionization processes in addition to those associated with nuclear collisions. The F-center concentration induced by electronic energy excitations was studied at different temperatures and as a function of the particle electronic energy losses. TEM revealed that dislocation loops were produced close to the particle trajectories and amorphization was never observed. On the opposite, in LiNbO3 continuous amorphous tracks were evidenced above a threshold near 5keV/nm. The dependance of this effects with various solid state parameters will be discussed.

A Transmission Electron Microscopy Study of the Effect of Interfaces on Bubble Formation in He-Implanted Cu-Nb Multilayers

2012 ◽  
Vol 18 (1) ◽  
pp. 152-161 ◽  
Author(s):  
D. Bhattacharyya ◽  
M.J. Demkowicz ◽  
Y.-Q. Wang ◽  
R.E. Baumer ◽  
M. Nastasi ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Layer Thickness ◽  
Bubble Diameter ◽  
Bubble Formation ◽  
Nuclear Reaction Analysis ◽  
Cross Sectional ◽  
Helium Bubbles ◽  
Transmission Electron ◽  
Pure Cu

AbstractMagnetron sputtered thin films of Cu, Nb, and Cu-Nb multilayers with 2.5 and 5 nm nominal layer thickness were deposited on Si and implanted with 4He+ and 3He+ ions. Secondary ion mass spectroscopy and nuclear reaction analysis, respectively, were used to measure the 4He+ and 3He+ concentration profile with depth inside the films. Cross-sectional transmission electron microscopy was used to characterize the helium bubbles. Analysis of the contrast from helium bubbles in defocused transmission electron microscope images showed a minimum bubble diameter of 1.25 nm. While pure Cu and Nb films showed bubble contrast over the entire range of helium implantation, the multilayers exhibited bubbles only above a critical He concentration that increased almost linearly with decreasing layer thickness. The work shows that large amounts of helium can be trapped at incoherent interfaces in the form of stable, nanometer-size bubbles.

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