The Nanomechanical Effect of Dendrimer Interlayers Underneath Cu Ultrathin Films

2002 ◽  
Vol 734 ◽  
Author(s):  
Junyan Zhang ◽  
Micheal Curry ◽  
Shane Street
Keyword(s):  
Thin Films ◽  
Ultrathin Films ◽  
Room Temperature ◽  
Native Oxide ◽  
Cu Films ◽  
Dc Sputtering ◽  
Repeat Units ◽  
Cu Film

ABSTRACTTwo kinds of dendrimers, DAB and PAMAM (with the same terminal groups but different branched repeat units), were chosen as interlayers for Cu ultrathin films deposited on native oxide Si(100) wafers. 10 nm Cu thin films were deposited directly on the dendrimer monolayers by DC sputtering at room temperature. The nanomechanical results show that PAMAM and DAB have significant effects on the properties of the resulting films, with the DAB layer acting as a stiffer ‘spring’, compared to PAMAM, underneath the Cu films. Both dendrimer interlayers lower the hardness of the film, compared to Cu alone; the effect is greater for PAMAM than DAB interlayers. However, the introduction of either dendrimer monolayer significantly increased the elasticity of the Cu film.

scholarly journals Optical and magneto-optical properties of GdxFe(100-x) thin films close to the compensation point

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Eva Jesenská ◽  
Takayuki Ishibashi ◽  
Lukáš Beran ◽  
Martin Pavelka ◽  
Jaroslav Hamrle ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Spectral Dependence ◽  
Room Temperature ◽  
Magnetic Moments ◽  
Perpendicular Magnetic Anisotropy ◽  
Theoretical Models ◽  
Compensation Point ◽  
Spin Torque ◽  
Dc Sputtering

Abstract Unlike ferromagnetic materials, ferrimagnetic metals have recently received considerable attention due to their bulk perpendicular magnetic anisotropy, low net magnetization and tunable magnetic properties. This makes them perfect candidates for the research of recently discovered spin-torque related phenomena. Among other ferrimagnetic metals, GdFe has an advantage in relatively large magnetic moments in both sublattices and tunability of compensation point above the room temperature by small changes in its composition. We present a systematic study of optical and magneto-optical properties of amorphous GdxFe(100-x) thin films of various compositions (x = 18.3, 20.0, 24.7, 26.7) prepared by DC sputtering on thermally oxidized SiO2 substrates. A combination of spectroscopic ellipsometry and magneto-optical spectroscopy in the photon energy range from 1.5 to 5.5 eV with advanced theoretical models allowed us to deduce the spectral dependence of complete permittivity tensors across the compensation point. Such information is important for further optical detection of spin related phenomena driven by vicinity of compensation point in nanostructures containing GdFe.

RESIDUAL STRESS DEVELOPMENT IN CU THIN FILMS WITH AND WITHOUT AlN PASSIVATION BY CYCLIC PLANE BENDING

2010 ◽  
Vol 24 (15n16) ◽  
pp. 2530-2536
Author(s):  
MITSUHIKO SHINOHARA ◽  
TAKAO HANABUSA ◽  
KAZUYA KUSAKA
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Diffraction Method ◽  
Micro Electro Mechanical System ◽  
Passivation Layer ◽  
X Ray Diffraction ◽  
Cu Films ◽  
Cu Film ◽  
Bending Fatigue Test ◽  
Plane Bending

Since the thin film technology is applied to micro-machines, MEMS (micro electro-mechanical system), optical devices and others, the evaluation of mechanical properties in thin films becomes to be important. On the other hand, there are differences in mechanical properties between bulk materials and thin films, but studies in this field have not yet been made enough. The present paper reports on the evaluation of the mechanical properties of Cu thin films with and without AlN passivation layer. Specimens with different thickness of Cu film were subjected to cyclic plane bending fatigue test. Residual stresses developed in the Cu films were measured in a sequence of bending cycles using X-ray diffraction method in order to understand the effect of film thickness and passivation layer on mechanical properties of Cu thin films.

scholarly journals Nanoindentation of Au and Pt/Cu thin films at elevated temperatures

2004 ◽  
Vol 19 (9) ◽  
pp. 2650-2657 ◽  
Author(s):  
Alex A. Volinsky ◽  
Neville R. Moody ◽  
William W. Gerberich
Keyword(s):  
Thin Films ◽  
Elastic Modulus ◽  
Yield Stress ◽  
Elevated Temperatures ◽  
Nanocrystalline Structure ◽  
Cu Films ◽  
Interfacial Toughness ◽  
Film Hardness ◽  
Cu Film ◽  
Sputter Deposited

This paper describes the nanoindentation technique for measuring sputter-deposited Au and Cu thin films’ mechanical properties at elevated temperatures up to 130 °C. A thin, 5-nm Pt layer was deposited onto the Cu film to prevent its oxidation during testing. Nanoindentation was then used to measure elastic modulus and hardness as a function of temperature. These tests showed that elastic modulus and hardness decreased as the test temperature increased from 20 to 130 °C. Cu films exhibited higher hardness values compared to Au, a finding that is explained by the nanocrystalline structure of the film. Hardness was converted to the yield stress using both the Tabor relationship and the inverse method (based on the Johnson cavity model). The thermal component of the yield-stress dependence followed a second-order polynomial in the temperature range tested for Au and Pt/Cu films. The decrease in yield stress at elevated temperatures accounts for the increased interfacial toughness of Cu thin films.

Cu Films on Si(100) by Partially Ionized Beam Deposition

1996 ◽  
Vol 427 ◽  
Author(s):  
Seok-Keun Koh ◽  
Ki-Hwan Kim ◽  
Sung Han ◽  
Hong Gui Jang ◽  
Hyung-Jin Jung
Keyword(s):  
Surface Roughness ◽  
Room Temperature ◽  
Scratch Test ◽  
Surface Scattering ◽  
Boundary Scattering ◽  
Cu Films ◽  
Cu Film ◽  
Via Holes ◽  
Acceleration Voltage ◽  
Beam Deposition

AbstractHighly (111) oriented Cu films with a thickness around 1800 Å were prepared on Si (100) at room temperature by partialy ionized beam deposition (PIBD) at pressure of 8 × 10-7 - 1 × 10-6 torr. Effects of acceleration voltage (Va) between 0 and 4 kV on such properties as crystallinity, surface roughness, resistivity, etc. of the films have been investigated. The Cu films deposited by PIBD had only (111) and (200) planes and the relative intensity ratio, 1(111)/I(200), of the films increased from 6.8 at Va=0 kV to 37 at Va=4 kV. There was no indication of impurities in the system from AES analyses. A large increase in grain size of the films occurred with Va up to Va– 1 kV, but little increase occurred with Va>lkV. Surface roughness of the films at the ionization potential of 400 V decreased with Va, and resisivity had the same trends as that of the surface roughness. In the Cu films made by PIBD, it appears that changes of resistivity are mainly due to a surface scattering rather than a grain boundary scattering. The via holes, which is of 0.5. μm diameter x 1.5 μm deep, in the Cu films made at Va=4 kV, were completely filled without voids. Adhesion of the Cu film on Si(100) deposited at Va=3 kV was 5 times greater than that of Cu film deposited at Va=0 kV, as determined by a scratch test.

scholarly journals Optimization of Parameters and Microstructural Properties of Ba0.5Sr0.5Co0.8Fe0.2O3-δ Thin Films Grown by Pulsed Laser Deposition (PLD)

2014 ◽  
Vol 17 (4) ◽  
pp. 257-263
Author(s):  
Saša Zeljković ◽  
Toni Ivas ◽  
Anna Infortuna ◽  
Ludwig J. Gauckler
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Columnar Structure ◽  
Laser Deposition ◽  
Native Oxide ◽  
Native Oxide Layer ◽  
Microstructural Properties ◽  
Optimization Of Parameters

Ba0.5Sr0.5Co0.8Fe0.2O3 − δ thin films were grown by pulsed laser deposition (PLD) in the temperature range from room temperature (RT) to 1073 K and at oxygen pressures from 6.66 to 39.99 Pa in order to produce dense defect-free thin films. Si with a native oxide layer and MgO were used as the substrate materials. The structure of the thin films was highly dependent on substrate temperature, material and oxygen partial pressure, leading to formation of different microstructures – pores, cracks, columnar and fibrous grains. Cracks and delamination of the thin films were observed in dense layers at higher temperatures, while this was not the case with the columnar thin films. Differences in thermal expansion coefficient, phase transformation and oxygen non-stoichiometry of BSCF are possible explanations for the cracking of the dense thin films. Thin films with a columnar structure are positively influenced by annealing inducing grain growth and densification.

scholarly journals Thickness dependence of the superconducting properties of γ- Mo2N thin films on Si (001) grown by DC sputtering at room temperature

2018 ◽  
Vol 204 ◽  
pp. 48-57 ◽  
Author(s):  
N. Haberkorn ◽  
S. Bengio ◽  
H. Troiani ◽  
S. Suárez ◽  
P.D. Pérez ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Thickness Dependence ◽  
Superconducting Properties ◽  
Dc Sputtering

Thermomechanical Behavior and Properties of Passivated Pvd and Ecd Cu Thin Films

2005 ◽  
Vol 875 ◽  
Author(s):  
M. Gregoire ◽  
S. Kordic ◽  
P. Gergaud ◽  
O. Thomas ◽  
M. Ignat
Keyword(s):  
Thin Films ◽  
Thermal Cycling ◽  
Grain Growth ◽  
Impurity Content ◽  
Thermomechanical Behavior ◽  
Temperature Curve ◽  
Cu Films ◽  
Texture Change ◽  
Cu Film ◽  
Electrochemically Deposited

AbstractThe thermomechanical behavior is investigated of SiCN-encapsulated blanket Physical Vapor Deposited (PVD) and Electrochemically Deposited (ECD) Cu films. At lower ECD Cu film thicknesses an anomalous shape and a tail of the stress-temperature curve are observed, which are not caused by impurities at the interfaces, but are correlated to highly textured microstructure. Repeated thermal cycling of up to 400 °C does not markedly change the texture of the films, but a significant texture change takes place with increasing ECD Cu thickness. Thermal cycling induces grain growth for thicker films only. Impurity content and distribution in the PVD films do not change due to cycling.

Room Temperature Growth of Al-Doped ZnO Thin Films by Reactive DC Sputtering Technique with Metallic Target

2013 ◽  
Vol 52 (1S) ◽  
pp. 01AC09 ◽  
Author(s):  
Noriyuki Hasuike ◽  
Koji Nishio ◽  
Kenji Kisoda ◽  
Hiroshi Harima
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Zno Thin Films ◽  
Temperature Growth ◽  
Dc Sputtering ◽  
Doped Zno ◽  
Dc Sputtering Technique ◽  
Metallic Target
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