Cu Films on Si(100) by Partially Ionized Beam Deposition

1996 ◽  
Vol 427 ◽  
Author(s):  
Seok-Keun Koh ◽  
Ki-Hwan Kim ◽  
Sung Han ◽  
Hong Gui Jang ◽  
Hyung-Jin Jung
Keyword(s):  
Surface Roughness ◽  
Room Temperature ◽  
Scratch Test ◽  
Surface Scattering ◽  
Boundary Scattering ◽  
Cu Films ◽  
Cu Film ◽  
Via Holes ◽  
Acceleration Voltage ◽  
Beam Deposition

AbstractHighly (111) oriented Cu films with a thickness around 1800 Å were prepared on Si (100) at room temperature by partialy ionized beam deposition (PIBD) at pressure of 8 × 10-7 - 1 × 10-6 torr. Effects of acceleration voltage (Va) between 0 and 4 kV on such properties as crystallinity, surface roughness, resistivity, etc. of the films have been investigated. The Cu films deposited by PIBD had only (111) and (200) planes and the relative intensity ratio, 1(111)/I(200), of the films increased from 6.8 at Va=0 kV to 37 at Va=4 kV. There was no indication of impurities in the system from AES analyses. A large increase in grain size of the films occurred with Va up to Va– 1 kV, but little increase occurred with Va>lkV. Surface roughness of the films at the ionization potential of 400 V decreased with Va, and resisivity had the same trends as that of the surface roughness. In the Cu films made by PIBD, it appears that changes of resistivity are mainly due to a surface scattering rather than a grain boundary scattering. The via holes, which is of 0.5. μm diameter x 1.5 μm deep, in the Cu films made at Va=4 kV, were completely filled without voids. Adhesion of the Cu film on Si(100) deposited at Va=3 kV was 5 times greater than that of Cu film deposited at Va=0 kV, as determined by a scratch test.

Deposition of Cu Films for Laser Mirror by Partially Ionized Beam Deposition

1995 ◽  
Vol 396 ◽  
Author(s):  
Seok-Keun Koh ◽  
Young-Soo Yoon ◽  
Ki-Hwan Kim ◽  
Hong-Gui Jang ◽  
Hyung-Jin Jung
Keyword(s):  
Surface Roughness ◽  
Room Temperature ◽  
Film Surface ◽  
Cu Films ◽  
Force Microscopy ◽  
Atomic Force ◽  
Cu Film ◽  
Partially Ionized ◽  
Acceleration Voltage ◽  
Beam Deposition

AbstractPartially ionized beam deposition of Cu thin films on glass at room temperature were carried out to fabricate Cu laser mirrors with good structural and reflectance properties. At a constant film thickness of 600 Å, the grain size of as-grown Cu films increased with acceleration voltage, and there was no indication of defects such as cracks and/or large pores in the film surface as shown in scanning electron microscopy images. Root-mean-square(Rms) surface roughnesses of the films with thicknesses of 600 Å were measured by atomic force microscopy. RmS surface roughness increased when acceleration voltage increased from 0 kV to 2 kV, but decreased at the acceleration voltage of 3 kV. RmS surface roughness of the film grown at 4 kV, however, increased again. At the acceleration voltage of 3 kV, reflectance of the films increased with the film thickness until 600 Å and decreased at the film thickness of 800 Å. The reflectance results showed that the Cu film deposited at 3 kV had higher reflectance than that of others. Our results suggest that it is possible to grow the Cu film with good structural and optical properties on glass substrate at room temperature by partially ionized beam deposition.

Cu films by partially ionized beam deposition for ultra large scale integration metallization

1998 ◽  
Vol 13 (5) ◽  
pp. 1158-1163 ◽  
Author(s):  
Ki-Hwan Kim ◽  
Hong-Gui Jang ◽  
Sung Han ◽  
Hyung-Jin Jung ◽  
Seok-Keun Koh ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Large Scale ◽  
Scratch Test ◽  
Cu Films ◽  
Cu Film ◽  
Large Scale Integration ◽  
Via Holes ◽  
Partially Ionized ◽  
Scale Integration ◽  
Beam Deposition

Highly (111) oriented Cu films with a thickness around 1800 Å were prepared on Si(100) at room temperature by partially ionized beam deposition (PIBD) at pressure of 8 × 10-7-1 × 10-6 Torr. Effects of acceleration voltage (Va) between 0 and 4 kV on such properties as crystallinity, surface roughness, resistivity, etc. of the films have been investigated. The Cu films deposited by PIBD had only (111) and (200) planes, and the relative intensity ratio, I(111)/I(200) of the Cu films increased from 6.8 at Va = 0 kV to 37 at Va = 4 kV. There was no indication of impurities in the system from Auger electron spectroscopy (AES) analyses. A large increase in grain size of the films occurred with Va up to Va = 1 kV, but little increase occurred with Va > 1 kV. Surface roughness of the Cu films decreased with Va, and resistivity showed the same trends as that of the surface roughness. In the Cu films by PIBD, it is considered that changes of resistivity are mainly due to a surface scattering rather than a grain boundary scattering. The via holes, dimensions of which are 0.5 μm in diameter and 1.5 μm in depth, in the Cu films made at Va = 4 kV were completely filled without voids. Interface adhesion of the Cu film on Si(100) deposited at Va = 3 kV was five times greater than that of Cu film deposited at Va = 0 kV, as determined by a scratch test.

The Nanomechanical Effect of Dendrimer Interlayers Underneath Cu Ultrathin Films

2002 ◽  
Vol 734 ◽  
Author(s):  
Junyan Zhang ◽  
Micheal Curry ◽  
Shane Street
Keyword(s):  
Thin Films ◽  
Ultrathin Films ◽  
Room Temperature ◽  
Native Oxide ◽  
Cu Films ◽  
Dc Sputtering ◽  
Repeat Units ◽  
Cu Film

ABSTRACTTwo kinds of dendrimers, DAB and PAMAM (with the same terminal groups but different branched repeat units), were chosen as interlayers for Cu ultrathin films deposited on native oxide Si(100) wafers. 10 nm Cu thin films were deposited directly on the dendrimer monolayers by DC sputtering at room temperature. The nanomechanical results show that PAMAM and DAB have significant effects on the properties of the resulting films, with the DAB layer acting as a stiffer ‘spring’, compared to PAMAM, underneath the Cu films. Both dendrimer interlayers lower the hardness of the film, compared to Cu alone; the effect is greater for PAMAM than DAB interlayers. However, the introduction of either dendrimer monolayer significantly increased the elasticity of the Cu film.

Development of Polyimide/SMA Thin-Film Actuator

2010 ◽  
Vol 654-656 ◽  
pp. 2075-2078 ◽  
Author(s):  
Akira Ishida ◽  
Morio Sato
Keyword(s):  
Room Temperature ◽  
Polyimide Film ◽  
Martensitic Transformation Temperature ◽  
Cu Films ◽  
Cu Content ◽  
Stable Production ◽  
Cu Film ◽  
Wide Range ◽  
Cutting Out ◽  
Sputter Deposited

Ti-Ni-Cu shape memory alloy (SMA) thin films were sputter-deposited on heated polyimide substrates. The (Ni,Cu) rich Ti-Ni-Cu films deposited at a substrate temperature of 543 K were found to possess a high martensitic transformation temperature above room temperature over a wide range of Cu content from 7 to 23 at%, which allows stable production of actuators that operate at room temperature. Additional deposition of a Cu film onto the Ti-Ni-Cu films facilitated the soldering of wires onto the actuators and also decreased the power consumption and response time of the actuator. The force of a polyimide/Ti-Ni-Cu SMA actuator could be increased merely by increasing the thickness of the polyimide film. An actuator composed of a 125 m thick polyimide film and an 8 m thick TiNiCu film was able to lift a 13.5 g weight. Furthermore, a Ti-Ni-Cu film could be pattern etched on a polyimide film to produce a circuit. The results indicate that a polyimide/SMA film actuator is a promising simple actuator that can be produced by simply cutting out an appropriately shaped piece with scissors or by punching and then connecting the two edges to a battery by soldering.

Impact of Low-Temperature Anneals of Electroplated Copper Films on Copper CMP Removal Rates

1999 ◽  
Vol 566 ◽  
Author(s):  
Konstantin Smekalin ◽  
Qing-Tang Jiang
Keyword(s):  
Room Temperature ◽  
Rate Increase ◽  
Removal Rate ◽  
Inert Gas ◽  
Copper Films ◽  
Cu Films ◽  
Film Hardness ◽  
Cu Film ◽  
Electroplated Copper ◽  
Over Time

CMP removal rate (RR) of electrodeposited Cu film was found to increase by 35% over time after plating. The RR increase was attributed to Cu film hardness reduction of 43% and grain growth from the initial 0.1urn at as-deposit to lum at the final stage at room temperature. The removal rate increase will translate to variations in manufacturing environment and are therefore unacceptable. It was found that annealing at ∼100C for 5 minutes in inert gas will stabilize Cu films and provide consistent CMP removal rate.

The Microstructure and Electrical Property of Porous Cu Film on Soft PVDF Substrate

2012 ◽  
Vol 472-475 ◽  
pp. 1451-1454
Author(s):  
Xue Hui Wang ◽  
Wu Tang ◽  
Ji Jun Yang
Keyword(s):  
Electrical Properties ◽  
Film Surface ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Cu Films ◽  
Cu Film ◽  
Diffraction Peaks ◽  
Sputtering Pressure ◽  
Effect Method

The porous Cu film was deposited on soft PVDF substrate by magnetron sputtering at different sputtering pressure. The microstructure and electrical properties of Cu films were investigated as a function of sputtering pressure by X-ray diffraction XRD and Hall effect method. The results show that the surface morphology of Cu film is porous, and the XRD revealed that there are Cu diffraction peaks with highly textured having a Cu-(220) or a mixture of Cu-(111) and Cu-(220) at sputtering pressure 0.5 Pa. The electrical properties are also severely influenced by sputtering pressure, the resistivity of the porous Cu film is much larger than that fabricated on Si substrate. Furthermore, the resistivity increases simultaneously with the increasing of Cu film surface aperture, but the resistivity of Cu film still decreases with the increasing grain size. It can be concluded that the crystal structure is still the most important factor for the porous Cu film resistivity.

Effect of Coating Bath Parameters on Properties of Electroless Nickel-Boron Alloy Coatings

2022 ◽  
Vol 10 (1) ◽  
pp. 0-0
Keyword(s):  
Surface Roughness ◽  
Surface Hardness ◽  
Chloride Concentration ◽  
Electroless Nickel ◽  
Nickel Chloride ◽  
Scratch Test ◽  
X Ray Diffraction ◽  
Tribological Behaviour ◽  
Pin On Disc ◽  
Mechanical Behaviours

Electroless nickel-boron binary coatings were obtained with various bath compositions to investigate the effect of bath parameters on tribological and mechanical behaviours of the coating. Characterisation of the coating for surface morphology and phase structure is done using Scanning Electron Microscopy (SEM) and X-ray Diffraction (XRD), respectively, whereas tribological behaviour of coatings is evaluated on a pin-on-disc tribo-tester. Elastic modulus and surface hardness of coatings have been obtained using nano-indentation technique, while the scratch behaviour of the coatings has been determined using micro-scratch test. Corrosion resistance of coatings is also determined. It is observed that surface roughness of the coatings increased with increase in sodium borohydride concentration but decreased slightly with increase in nickel chloride concentration. Friction and wear characteristics are found to increase with surface roughness which occurs due to increased boron content. Surface hardness and scratch hardness are also seen to vary with coating bath parameters.

Nanotwinned Surface on a Ternary Titanium Alloy with Increased Hardness Induced under Nanoindentations

2016 ◽  
Vol 874 ◽  
pp. 323-327
Author(s):  
Hong Xiu Zhou ◽  
Ming Lei Li ◽  
Neng Dong Duan ◽  
Bo Wang ◽  
Zhi Feng Shi ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Surface Roughness ◽  
Titanium Alloy ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Room Temperature ◽  
Chemical Reagents ◽  
Transmission Electron ◽  
High Temperature High Pressure

A nanotwinned surface is formed on a titanium alloy under nanoindentations. Prior to nanoindentation, blocks of a ternary titanium alloy are machined by chemical mechanical polishing. The surface roughness Ra and peak-to-valley values are 1.135 nm and 8.82 nm, respectively. The hardness in the indented surface is greatly increased, indicated from the load-displacement curves compared to the polished surfaces. Nanotwins are confirmed using transmission electron microscopy. The nanotwinned surface is uniformly generated by nanoindentations at room temperature, which is different from previous findings, in which high temperature, high pressure, or chemical reagents are usually used. The nanotwinned surface is produced by pure mechanical stress, neither material removal nor addition.

scholarly journals CHARACTERISTICS OF LITHIUM LANTHANUM TITANATE THIN FILMS MADE BY ELECTRON BEAM EVAPORATION FROM NANOSTRUCTURED La0.67-xLi 3xTiO3 TARGET

2017 ◽  
Vol 25 (2) ◽  
pp. 243-250
Author(s):  
Nguyen Nang Dinh ◽  
Le Dinh Trong ◽  
Pham Duy Long
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ionic Conductivity ◽  
Room Temperature ◽  
Xrd Analysis ◽  
Electron Beam Evaporation ◽  
Electrochromic Devices ◽  
Lanthanum Titanate ◽  
Average Size ◽  
Beam Deposition

Bulk nanostructured perovskites of La0.67-xLi3xTiO3 (LLTO) were prepared by using thermally ball-grinding from compounds of La2O3, Li2CO3 and TiO2. From XRD analysis, it was found that LTTO materials were crystallized with nano-size grains of an average size of 30 nm. The bulk ionic conductivity was found strongly dependent on the Li+ composition, the samples with x = 0.11 (corresponding to a La0.56Li0.33TiO3 compound) have the best ionic conductivity, which is ca. 3.2 x 10-3 S/cm at room temperature. The LLTO amorphous films were made by electron beam deposition. At room temperature the smooth films have ionic conductivity of 3.5 x 10-5  S/cm and transmittance of 80%. The optical bandgap of the films was found to be of 2.3 eV. The results have shown that the perovskite La0.56Li0.33TiO3  thin films can be used for a transparent solid electrolyte in ionic battery and in all-solid-state electrochromic devices, in particular.    

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