A Study on Impact of Process Parameters to Metal Organic Chemical Vapor Deposition Grown (002) Zinc Oxide Thin Films, at 320°C

2002 ◽  
Vol 744 ◽  
Author(s):  
Yuneng Chang ◽  
Hengchuan Lu ◽  
Yumeng Hung ◽  
Chunsung Lee ◽  
Jianming Chen ◽  
...  
Keyword(s):  
Growth Rate ◽  
Water Vapor ◽  
Buffer Layer ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Zno Films ◽  
Key Factors ◽  
Si Substrates ◽  
Metal Organic ◽  
Zno Buffer Layer

ABSTRACTThis paper reports preparation of highly oriented (002) ZnO films by atmospheric pressure CVD at 320°C, which is far below previous reported values. In this study, a cold wall horizontal system was used to thermally decompose sublimed zinc acetylacetonate (Zn(acac)2, Zn(C5H702)2) vapor, and reacted with water vapor to produce ZnO films at temperatures above 320°C. Through experimental data, we discovered that low deposition temperature, using water vapor as co-reactant and substrates with ZnO buffer layer pre-coated by PVD are the key factors to prepare (002) ZnO films. By using Si(100) pre-coated with sputtered ZnO amorphous buffer layer as substrates, the ZnO growth rate is highest. While using copper oxide pre-coated Si substrates gave the lowest growth rate, and deposited ZnO film is amorphous. Considering influence of CVD co-reactant, using Zn(acac)2 and water vapor gives higher growth rate and better crystallinity than CVD using Zn(acac)2 and oxygen. Water vapor may supply hydrogen to react with released acetylacetonyl ligand (C5H7O2), and help the formation of stable acetylaceton (C5H8O2) molecule. DPA shows that film contain 46% O and 54% Zn. XPS of Zn Auger identified the valence of Zn being Zn2+. It seems that excessive Zn might present as discrete Zn2+ dispersed between ZnO lattices.

Fabrication and Characterization of ZnO Nanoneedle Array Using Metal Organic Chemical Vapor Deposition

2008 ◽  
Vol 8 (2) ◽  
pp. 623-627 ◽  
Author(s):  
Dongseok Park ◽  
Youngjo Tak ◽  
Kijung Yong
Keyword(s):  
Chemical Vapor Deposition ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Field Enhancement ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Three Samples ◽  
Metal Organic ◽  
Zno Buffer Layer ◽  
Organic Chemical Vapor Deposition

High density and vertically well-aligned ZnO nanoneedle arrays were fabricated on the ZnO thin film deposited on silicon substrates. The ZnO buffer layer and nanoneedles were synthesized by metal organic chemical vapor deposition using diethylzinc and oxygen gas. The ZnO buffer film was grown at 250 °C and the growth temperature of nanoneedles was in the range of 480–500 °C. As-grown ZnO nanoneedles showed single crystalline structure of ZnO (002). The crystalline properties of three samples (A: as-deposited ZnO buffer layer, B: annealed buffer film, C: ZnO nanoneedles) were compared using XRD and Raman spectroscopy. The synthesized ZnO nanoneedles (sample C) showed highest crystalline quality among three samples. The field emission properties of ZnO nanoneedles were investigated, which showed low turn on field of 4.8 V μm−1 and high field enhancement factor of 3.2 × 103.

Improvement of Crystal and Optical Properties of ZnO Film Grown on Hydrogen-Implanted Compliant Si Substrate

2014 ◽  
Vol 1015 ◽  
pp. 18-22
Author(s):  
Biao Yu ◽  
Hai Bo Fan ◽  
Zhao Yang Liu ◽  
Zhe Peng Zhang ◽  
He Bao Yao
Keyword(s):  
Film Surface ◽  
Chemical Vapor ◽  
Optical Quality ◽  
Organic Chemical ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Force Microscopy ◽  
Si Substrates ◽  
Metal Organic

Zinc oxide (ZnO) films are deposited on hydrogen (H+)-implanted Si and bare Si substrates respectively by Metal-organic Chemical Vapor Deposition (MOCVD). The properties of the films are investigated with Scanning electron microscopy (SEM), X-ray diffraction (XRD), Atom Force Microscopy (AFM), Raman spectra and Photoluminescence (PL) detections, from which we find that compared with bare Si substrate, H+-implanted Si can act as a compliant substrate (CS) and effectively improve the crystal quality, decrease the inner stress arisen from the misfit between substrate and epitaxial layer, perfect the film surface smooth degree and optimize the optical quality. At the end, the CS working mechanism is discussed.

scholarly journals O-Band Emitting InAs Quantum Dots Grown by MOCVD on a 300 mm Ge-Buffered Si (001) Substrate

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2450
Author(s):  
Oumaima Abouzaid ◽  
Hussein Mehdi ◽  
Mickael Martin ◽  
Jérémy Moeyaert ◽  
Bassem Salem ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor ◽  
Lattice Parameter ◽  
Organic Chemical ◽  
Silicon Substrates ◽  
Wafer Level ◽  
Si Substrate ◽  
Si Substrates ◽  
Transmission Electron ◽  
Metal Organic

The epitaxy of III-V semiconductors on silicon substrates remains challenging because of lattice parameter and material polarity differences. In this work, we report on the Metal Organic Chemical Vapor Deposition (MOCVD) and characterization of InAs/GaAs Quantum Dots (QDs) epitaxially grown on quasi-nominal 300 mm Ge/Si(001) and GaAs(001) substrates. QD properties were studied by Atomic Force Microscopy (AFM) and Photoluminescence (PL) spectroscopy. A wafer level µPL mapping of the entire 300 mm Ge/Si substrate shows the homogeneity of the three-stacked InAs QDs emitting at 1.30 ± 0.04 µm at room temperature. The correlation between PL spectroscopy and numerical modeling revealed, in accordance with transmission electron microscopy images, that buried QDs had a truncated pyramidal shape with base sides and heights around 29 and 4 nm, respectively. InAs QDs on Ge/Si substrate had the same shape as QDs on GaAs substrates, with a slightly increased size and reduced luminescence intensity. Our results suggest that 1.3 μm emitting InAs QDs quantum dots can be successfully grown on CMOS compatible Ge/Si substrates.

Copper Films Prepared by Metal Organic Chemical Vapor Deposition (MOCVD) Process Using Copper (Acetylacetonate) and Water Vapor as Reactants: The Impact of Water Vapor

1992 ◽  
Vol 282 ◽  
Author(s):  
Yu-Neng Chang
Keyword(s):  
Water Vapor ◽  
Partial Pressure ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Gas Flow Rate ◽  
Cu Films ◽  
Metal Organic ◽  
Carrier Gas Flow ◽  
Organic Chemical Vapor Deposition

ABSTRACTBy using the strong reductive potential of copper acetylacetone (Cu(acac)2) when Cu(acac)2) was thermally decomposed, copper metal films were prepared by metal organic chemical vapor deposition (MOCVD) process using sublimed Cu(acac)2 vapor and water vapor as reactants, at one atmosphere pressure. According to thermodynamic calculations, Cu films could be prepared by MOCVD process with a high ratio of partial pressures for water vapor and Cu(acac)2 vapor (PH2O/Pcu(acac)2>30) In this paper, the impacts of MOCVD processing parameters such as watervapor partial pressure, total carrier gas flow rate, and precursor partial pressure on film composition and microstructure were investigated. Deposition temperature is the primary processing parameter affecting film stoichiometry. In a specific deposition temperature window, from 370°C to 400°C, polycrystalline Cu films with Cu [111] preferential orientation were deposited. ER and XRD results indicated that films deposited at temperature lower than 350°C contain copper oxide phase with poor crystal structure. By comparing the values of X-ray Auger Electron Spectroscopy (XAES) and Auger parameter (αAu) from photoelectrons of Cu films and standards from reference compounds, die principle oxidation state of copper in these films was determined as Cu(0). The deposition results indicated that a water vapor partial pressure above 10 torr is necessary to produce Cu films. As indicated by SEM, Increasing the carrier gas flow rate, above 600 sccm, can reduce the average temperature profile in the thermal boundary layer above the substrate surface, retard the gas phase reaction rate, presumably eliminate the homogeneous nucleation, and deposit smooth Cu films.

Metal Organic Chemical Vapor Deposition of Co-, Mn-, Co-Zr and Mn-Zr Oxide Thin Films

1999 ◽  
Vol 606 ◽  
Author(s):  
D. Barreca ◽  
F. Benetollo ◽  
M. Bozza ◽  
S. Bozza ◽  
G. Carta ◽  
...  
Keyword(s):  
Thin Films ◽  
Water Vapor ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Decomposition Efficiency ◽  
Mn Oxides

AbstractDeposition of thin films of Co- and Mn- oxides as well as of their mixtures with ZrO2 have been carried out by MOCVD using Co(C5H5)2, Mn(C5F6HO2)2(THF)2and (C5Hs)2Zr(CH3)2as precursors. XRD and XPS analyses of the obtained deposits are reported. Introduction of water vapor into the reactor chamber during the flow of the precursors improved their decomposition efficiency and the quality of the films.

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