High Gain, Low Threshold Current GaInAsP Based Vcsels for Operation at 1.24UM

2002 ◽  
Vol 744 ◽  
Author(s):  
Zhuopeng Tan ◽  
Yixin Li ◽  
Aris Christou
Keyword(s):  
Resonant Cavity ◽  
Threshold Current ◽  
High Gain ◽  
Cavity Surface ◽  
Optimized Design ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Low Threshold ◽  
External Efficiency ◽  
Threshold Gain

ABSTRACTAn electrically pumped 1.24um GaxIn1-xAsyP1-y Vertical Cavity Surface Emitting Laser (VCSEL) has been designed and simulated. Threshold gain of 153cm-1 and threshold current of 1.00mA was obtained. The external efficiency predicted is 0.31. Also the optimized design of VCSEL structure is presented in this article. GaInAsP and AlInAs constitute the Distributed Bragg Reflectors (DBRs) multilayer stack. Reflectivity of the top DBRs is 0.97 and reflectivity of the bottom DBRs is 0.9978 and is shown to provide a good resonant cavity and sufficient lasing intensity. Compared with other reported structures, the present VCSEL has a lower threshold current and higher threshold gain.

Single-transverse mode, low threshold current vertical-cavity surface-emitting laser

1993 ◽  
Vol 40 (11) ◽  
pp. 2116-2117 ◽  
Author(s):  
Y.A. Wu ◽  
C.J. Chang-Hasnain ◽  
G.S. Li ◽  
R. Nabiev ◽  
C. Caneau ◽  
...  
Keyword(s):  
Transverse Mode ◽  
Threshold Current ◽  
Cavity Surface ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Low Threshold ◽  
Vertical Cavity

Low-threshold-current InGaAs vertical cavity surface emitting laser with reverse mesa structure

1996 ◽  
Author(s):  
Zhongqi Pan ◽  
Yongzhen Huang ◽  
Rong Han Wu ◽  
Zengqi Zhou ◽  
Yaowang Ling ◽  
...  
Keyword(s):  
Threshold Current ◽  
Cavity Surface ◽  
Mesa Structure ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Low Threshold ◽  
Vertical Cavity

InGaAs/GaAs Strained-Layer QW Vertical Cavity Surface Emitting Laser Structures grown on GaAs (311)A Substrates by MBE

1995 ◽  
Vol 417 ◽  
Author(s):  
M. Takahashi ◽  
P. Vaccaro ◽  
K. Fujita ◽  
T. Watanabe
Keyword(s):  
Growth Conditions ◽  
High Gain ◽  
Cavity Surface ◽  
Strained Layer ◽  
Vertical Cavity Surface ◽  
Polarization Characteristics ◽  
Surface Emitting Laser ◽  
Low Threshold ◽  
Emitting Lasers ◽  
Vertical Cavity

AbstractWe report the crystal growth conditions and lasing characteristics of InGaAs-GaAs strained-layer quantum well vertical cavity surface emitting lasers (VCSELs) grown on GaAs(311)A substrates by molecular beam epitaxy. A significantly smooth surface and high reflectivity of more than 99 % were achieved. Very flat and dislocation-free AlAs/GaAs hetero-interfaces were obtained. Furthermore, a very low threshold of 5.5 mA and current density of 270 A/cm2 have been achieved for the first time under CW operation at room temperature. In addition, we demonstrate stable polarization characteristics at high currents. These results are believed to be a consequence of both the predicted high gain and anisotropic gain distribution on the (311) surface.

scholarly journals Design and Fabrication of the Reliable GaN Based Vertical-Cavity Surface-Emitting Laser via Tunnel Junction

Crystals ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 187 ◽  
Author(s):  
Chih-Chiang Shen ◽  
Yun-Ting Lu ◽  
Yen-Wei Yeh ◽  
Cheng-Yuan Chen ◽  
Yu-Tzu Chen ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Indium Tin Oxide ◽  
Optical Loss ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Cavity Surface ◽  
Output Performance ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

In this study, we theoretically designed and experimentally fabricated an InGaN vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction (TJ) structure. From numerical simulation results, the optical loss of the device can be reduced by a TJ structure. Additionally, the leakage current of the VCSEL with TJ structure was much smaller than that of the VCSEL with an Indium-Tin-Oxide (ITO) layer. We have been demonstrated that laser output performance is improved by using the TJ structure when compared to the typical VCSEL structure of the ITO layer. The output power obtained at 2.1 mW was enhanced by a factor of 3.5 by the successful reduction of threshold current density (Jth) from 12 to 8.5 kA/cm2, and the enlarged slope efficiency was due to less absorption in VCSEL with a TJ structure. Finally, the samples passed the high temperature (70 °C) and high operation current (1.5 × Jth) test for over 500 h.

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