Analysis of Cu(InGa)Se2 Alloy Film Optical Properties and the Effect of Cu Off-Stoichiometry

2005 ◽  
Vol 865 ◽  
Author(s):  
P. D. Paulson ◽  
S. H. Stephens ◽  
W. N. Shafarman
Keyword(s):  
Optical Constants ◽  
Soda Lime ◽  
Alloy Film ◽  
Relative Volume ◽  
Soda Lime Glass ◽  
Distinctive Features ◽  
Glass Substrates ◽  
Wide Range ◽  
Two Phases

AbstractVariable angle spectroscopic ellipsometry has been used to characterize Cu(InGa)Se2 thin films as a function of relative Ga content and to study the effects of Cu off-stoichiometry. Uniform Cu(InGa)Se2 films were deposited on Mo-coated soda lime glass substrates by elemental evaporation with a wide range of relative Cu and Ga concentrations. Optical constants of Cu(InGa)Se2 were determined over the energy range of 0.75–C4.6 eV for films with 0 ≤ Ga/(In+Ga) ≤ 1 and used to determine electronic transition energies. Further, the changes in the optical constants and electronic transitions as a function of Cu off-stoichiometry were determined in Cu-In-Ga-Se films with Cu atomic concentration varying from 10 to 25 % and Ga/(In+Ga) = 0.3. Films with Cu in the range 16–24 % are expected to contain 2 phases so an effective medium approximation is used to model the data. This enables the relative volume fractions of the two phases, and hence composition, to be determined. Two distinctive features are observed in the optical spectra as the Cu concentration decreases. First, the fundamental bandgaps are shifted to higher energies. Second, the critical point features at higher energies become broader suggesting degradation of the crystalline quality of the material.

scholarly journals n-i-p Nanocrystalline Hydrogenated Silicon Solar Cells with RF-Magnetron Sputtered Absorbers

Materials ◽  
2019 ◽  
Vol 12 (10) ◽  
pp. 1699
Author(s):  
Dipendra Adhikari ◽  
Maxwell M. Junda ◽  
Corey R. Grice ◽  
Sylvain X. Marsillac ◽  
Robert W. Collins ◽  
...  
Keyword(s):  
Solar Cells ◽  
Chemical Vapor ◽  
Soda Lime ◽  
Device Fabrication ◽  
Silicon Solar Cells ◽  
Soda Lime Glass ◽  
Hydrogenated Silicon ◽  
Glass Substrates ◽  
Collection Probability

Nanocrystalline hydrogenated silicon (nc-Si:H) substrate configuration n-i-p solar cells have been fabricated on soda lime glass substrates with active absorber layers prepared by plasma enhanced chemical vapor deposition (PECVD) and radio frequency magnetron sputtering. The cells with nanocrystalline PECVD absorbers and an untextured back reflector serve as a baseline for comparison and have power conversion efficiency near 6%. By comparison, cells with sputtered absorbers achieved efficiencies of about 1%. Simulations of external quantum efficiency (EQE) are compared to experimental EQE to determine a carrier collection probability gradient with depth for the device with the sputtered i-layer absorber. This incomplete collection of carriers generated in the absorber is most pronounced in material near the n/i interface and is attributed to breaking vacuum between deposition of layers for the sputtered absorbers, possible low electronic quality of the nc-Si:H sputtered absorber, and damage at the n/i interface by over-deposition of the sputtered i-layer during device fabrication.

DETERMINATION OF THE OPTICAL CONSTANTS OF InxSey THIN FILMS DEPOSITED BY EVAPORATION AND COEVAPORATION

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1687-1691 ◽  
Author(s):  
J. SANDINO ◽  
G. GORDILLO
Keyword(s):  
Thin Films ◽  
Optical Constants ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Interference Effects ◽  
Spectral Transmittance ◽  
Cauchy Equation ◽  
Glass Substrates ◽  
Special Procedure

In x Se y thin films, grown on soda lime glass substrates in the In 6 Se 7 phase by evaporation of the In 2 Se 3 compound and in the In 2 Se 3 phase by coevaporation of In and Se, were optically characterized through spectral transmittance measurements. A special procedure was developed to determine the thickness d and the optical constants (refractive index n, absorption coefficient α, and optical gap Eg). This includes experimental measurements of the spectral transmittance and the use of a model taking into account interference effects induced by internal reflections presented in the interfaces substrate/film and film/air and the fitting of the n vs. λ curve to the Cauchy equation (n = A + B/λ2). The optical constants of the In x Se y thin films were corrected comparing the experimental transmittance spectrum with the theoretical one. The results revealed that the optical constants of the In x Se y films were significantly affected by the deposition method.

Accurate Measurement of the Optical Constants n and k for a Series of 57 Inorganic and Organic Liquids for Optical Modeling and Detection

2017 ◽  
Vol 72 (4) ◽  
pp. 535-550 ◽  
Author(s):  
Tanya L. Myers ◽  
Russell G. Tonkyn ◽  
Tyler O. Danby ◽  
Matthew S. Taubman ◽  
Bruce E. Bernacki ◽  
...  
Keyword(s):  
Optical Constants ◽  
Organophosphorus Compounds ◽  
Soda Lime ◽  
Organic Liquids ◽  
Soda Lime Glass ◽  
Dimethyl Methylphosphonate ◽  
Glass Substrates ◽  
Optical Modeling ◽  
Metal Aluminum ◽  
Path Lengths

For optical modeling and other purposes, we have created a library of 57 liquids for which we have measured the complex optical constants n and k. These liquids vary in their nature, ranging in properties that include chemical structure, optical band strength, volatility, and viscosity. By obtaining the optical constants, one can model most optical phenomena in media and at interfaces including reflection, refraction, and dispersion. Based on the works of others, we have developed improved protocols using multiple path lengths to determine the optical constants n/k for dozens of liquids, including inorganic, organic, and organophosphorus compounds. Detailed descriptions of the measurement and data reduction protocols are discussed; agreement of the derived optical constant n and k values with literature values are presented. We also present results using the n/k values as applied to an optical modeling scenario whereby the derived data are presented and tested for models of 1 µm and 100 µm layers for dimethyl methylphosphonate (DMMP) on both metal (aluminum) and dielectric (soda lime glass) substrates to show substantial differences between the reflected signal from highly reflective substrates and less-reflective substrates.

scholarly journals Effects of substrate properties and sputtering methods on self-formation of Ag particles on the Ag–Mo(Zr) alloy films

2020 ◽  
Vol 9 (1) ◽  
pp. 990-997
Author(s):  
Haoliang Sun ◽  
Xinxin Lian ◽  
Xiaoxue Huang ◽  
David Hui ◽  
Guangxin Wang
Keyword(s):  
Single Crystal Silicon ◽  
Soda Lime ◽  
Alloy Film ◽  
Soda Lime Glass ◽  
Crystal Silicon ◽  
Alloy Films ◽  
Glass Substrates ◽  
Ag Particles ◽  
Substrate Properties ◽  
Zr Alloy

AbstractThis article studies two different sputtering methods for depositing Ag–Mo and Ag–Zr alloy films on single crystal silicon (Si), flexible polyimide (PI) and soda-lime glass substrates. The phase structure and the surface morphology of the Ag–Mo(Zr) alloy films were characterized by XRD, SEM and EDS. The effects of substrate properties and sputtering methods on the self-grown Ag particles on the Ag–Mo(Zr) alloy films were investigated. As the result of the experiment, nanoscale Ag particles were formed on the surface of Ag–Mo(Zr) alloy films. However, the size and the number of self-formed Ag particles on the Ag–Mo(Zr) alloy film on the PI substrate are significantly different from that on the Si substrate and glass substrate. This outcome is closely related to the different thermal stress evolution behaviors of the alloy films on different substrates during annealing.

Development of Selenization/Sulfurization Process for High Quality Cu(In, Ga)(S, Se)2 Solar Cells on High Strain Point Glass Substrates

2013 ◽  
Vol 1493 ◽  
pp. 225-229
Author(s):  
Takeshi Tomizawa ◽  
Reo Usui ◽  
Takeshi Okato ◽  
Hidefumi Odaka
Keyword(s):  
Relative Efficiency ◽  
Smooth Surface ◽  
High Strain ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Admittance Spectroscopy ◽  
High Quality ◽  
Glass Substrates ◽  
Higher Temperature

ABSTRACTThis study provides a recipe of a 2-step selenization and sulfurization method for high strain point (HSP) glass to improve the quality of Cu(In, Ga)(S, Se)2 (CIGSSe). The recipe is distinguished by slow selenization growth before sulfurization growth at the high temperature of 580 °C. We used proto-type HSP glass instead of standard soda lime glass (SLG) to tolerate this higher temperature process. The provided slow selenization recipe improved an averaged relative efficiency by 14 percent compared to a rapid selenization recipe. We confirmed the improvement of the quality of CIGSSe which was characterized by the high crystal quality, the smooth surface, the uniform depletion layer and reduced defects as measured by XRD, SEM, EBIC and Admittance spectroscopy.

Preparation of CuInGaSe2 Absorber Layer by Nanoparticles-Based Spray Deposition

2004 ◽  
Vol 836 ◽  
Author(s):  
Ki-Hyun Kim ◽  
Young-Gab Chun ◽  
Byung-Ok Park ◽  
Kyung-Hoon Yoon
Keyword(s):  
Spray Deposition ◽  
Soda Lime ◽  
Inert Atmosphere ◽  
Absorber Layer ◽  
Step Motor ◽  
Soda Lime Glass ◽  
Soda Lime Glass Substrate ◽  
Glass Substrates ◽  
Spray System ◽  
Cigs Nanoparticles

ABSTRACTCIGS nanoparticles for the CIGS absorber layer have been synthesized by low temperature colloidal routes. The CIGS absorber layers for solar cells have been prepared by spray deposition of CIGS nanoparticle precursors (∼20 nm) in glove box under inert atmosphere. An automatic air atomizing nozzle spray system with computer controlled X-Y step motor system was used to spray. The nanoparticle precursor CIGS film was deposited onto molybdenum-coated soda-lime glass substrates (2.5 cm × 5.0 cm) heated to 160°C. The film thickness in the range of 2 μm ± 0.3 μm was attained by spraying of 3 mM colloidal over an area of 12.5 cm2. The coalescence between particles was observed in the CIGS absorber layer under post-treatment of over 550 °C. This is related to the reactive sintering among the nanoparticles to reduce surface energy of the particles. The CuxSe thin film, formed on Mo film by evaporation, improved adhesion between CIGS and Mo layers and enhanced the coalescence of the particles in the CIGS layer. These are closely related to the fluxing of Cu2Se phase which has relatively low melting temperature. The CdS buffer layer was deposited on the CIGS/Mo/soda-lime glass substrate by chemical bath deposition. The CIGS nanoparticles-based absorber layers were characterized by using energy dispersive spectroscopy (EDS), x-ray diffraction (XRD) and high-resolution scanning electron microscopy (HRSEM).

Application of ZnGa2O4:Mn Down-Conversion Layer to Increase the Energy-Conversion Efficiency of Perovskite Solar Cells

2021 ◽  
Vol 21 (8) ◽  
pp. 4362-4366
Author(s):  
Ji Yong Hwang ◽  
Chung Wung Bark ◽  
Hyung Wook Choi
Keyword(s):  
Solar Cells ◽  
Energy Conversion ◽  
Tin Oxide ◽  
Perovskite Solar Cells ◽  
Soda Lime ◽  
Light Transmittance ◽  
Soda Lime Glass ◽  
Manufacturing Cost ◽  
Wide Range ◽  
Down Conversion

The perovskite solar cell is capable of energy conversion in a wide range of wavelengths, from 300 nm to 800 nm, which includes the entire visible region and portions of the ultraviolet and infrared regions. To increase light transmittance of perovskite solar cells and reduce manufacturing cost of perovskite solar cells, soda-lime glass and transparent conducting oxides, such as indium tin oxide and fluorine-doped tin oxide are mainly used as substrates and light-transmitting electrodes, respectively. However, it is evident from the transmittance of soda-lime glass and transparent conductive oxides measured via UV-Vis spectrometry that they absorb all light near and below 310 nm. In this study, a transparent Mn-doped ZnGa2O4 film was fabricated on the incident surface of perovskite solar cells to obtain additional light energy by down-converting 300 nm UV light to 510 nm visible light. We confirmed the improvement of power efficiency by applying a ZnGa2O4:Mn down-conversion layer to perovskite solar cells.

Selective formation of GaN-based nanorod heterostructures on soda-lime glass substrates by a local heating method

2011 ◽  
Vol 22 (20) ◽  
pp. 205602 ◽  
Author(s):  
Young Joon Hong ◽  
Yong-Jin Kim ◽  
Jong-Myeong Jeon ◽  
Miyoung Kim ◽  
Jun Hee Choi ◽  
...  
Keyword(s):  
Local Heating ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Heating Method ◽  
Glass Substrates ◽  
Selective Formation

Preparation and Characterization of Cu2Zn(GexSn1-x)Se4 Thin-films from Sputtered Elemental Precursors

2014 ◽  
Vol 1670 ◽  
Author(s):  
Antony Jan ◽  
Yesheng Yee ◽  
Bruce M. Clemens
Keyword(s):  
Band Gap ◽  
Low Cost ◽  
Solar Spectrum ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Material System ◽  
Direct Band Gap ◽  
Glass Substrates ◽  
Before And After ◽  
Direct Band

ABSTRACTThin-film absorber layers for photovoltaics have attracted much attention for their potential for low cost per unit power generation, due both to reduced material consumption and to higher tolerance for defects such as grain boundaries. Cu2ZnGeSe4 (CZGSe) comprises one such material system which has a near-optimal direct band gap of 1.6 eV for absorption of the solar spectrum, and is made primarily from earth-abundant elements.CZGSe metallic precursor films were sputtered from Cu, Zn, and Ge onto Mo-coated soda lime glass substrates. These were then selenized in a two-zone close-space sublimation furnace using elemental Se as the source, with temperatures in the range of 400 to 500 C, and at a variety of background pressures. Films approximately 1-1.5 µm thick were obtained with the expected stannite crystal structure.Next, Cu2ZnSnSe4 (CZTSe), which has a direct band gap of 1.0 eV, was prepared in a similar manner and combined with CZGSe as either compositionally homogeneous or layered absorbers. The compositional uniformity of selenide absorbers made by selenizing compositionally homogeneous Cu-Zn-Ge-Sn precursor layers was determined and the band gap as a function of composition was investigated in order to demonstrate that the band gap is tuneable for a range of compositions. For layered Cu-Zn-Ge/Cu-Zn-Sn precursor films, the composition profile was measured before and after selenization to assess the stability of the layered structure, and its applicability for forming a band-gap-graded device for improved current collection.

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