Preparation of CuInGaSe2 Absorber Layer by Nanoparticles-Based Spray Deposition

2004 ◽  
Vol 836 ◽  
Author(s):  
Ki-Hyun Kim ◽  
Young-Gab Chun ◽  
Byung-Ok Park ◽  
Kyung-Hoon Yoon
Keyword(s):  
Spray Deposition ◽  
Soda Lime ◽  
Inert Atmosphere ◽  
Absorber Layer ◽  
Step Motor ◽  
Soda Lime Glass ◽  
Soda Lime Glass Substrate ◽  
Glass Substrates ◽  
Spray System ◽  
Cigs Nanoparticles

ABSTRACTCIGS nanoparticles for the CIGS absorber layer have been synthesized by low temperature colloidal routes. The CIGS absorber layers for solar cells have been prepared by spray deposition of CIGS nanoparticle precursors (∼20 nm) in glove box under inert atmosphere. An automatic air atomizing nozzle spray system with computer controlled X-Y step motor system was used to spray. The nanoparticle precursor CIGS film was deposited onto molybdenum-coated soda-lime glass substrates (2.5 cm × 5.0 cm) heated to 160°C. The film thickness in the range of 2 μm ± 0.3 μm was attained by spraying of 3 mM colloidal over an area of 12.5 cm2. The coalescence between particles was observed in the CIGS absorber layer under post-treatment of over 550 °C. This is related to the reactive sintering among the nanoparticles to reduce surface energy of the particles. The CuxSe thin film, formed on Mo film by evaporation, improved adhesion between CIGS and Mo layers and enhanced the coalescence of the particles in the CIGS layer. These are closely related to the fluxing of Cu2Se phase which has relatively low melting temperature. The CdS buffer layer was deposited on the CIGS/Mo/soda-lime glass substrate by chemical bath deposition. The CIGS nanoparticles-based absorber layers were characterized by using energy dispersive spectroscopy (EDS), x-ray diffraction (XRD) and high-resolution scanning electron microscopy (HRSEM).

Preparation and Characterization of Cu-Ga-Se Films of Ordered Vacancy Compound

2003 ◽  
Vol 763 ◽  
Author(s):  
S. Nishiwaki ◽  
S. Siebentritt ◽  
M. Ch. Lux-Steiner
Keyword(s):  
Short Circuit ◽  
Short Circuit Current ◽  
Bottom Layer ◽  
Soda Lime ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Chalcopyrite Structure ◽  
Soda Lime Glass ◽  
Soda Lime Glass Substrate ◽  
Glass Substrates

AbstractCu-Ga-Se films with an orderd vacancy compound (OVC) structure were prepared at substrate temperature about 500 °C by thermal co-deposition. With a preparation under extremely Se excess condition, films of the OVC were synthesized within the compositional ratio of 0.73 ≤ [Ga]/([Cu]+[Ga]) ≤ 0.86 along Cu2Se-Ga2Se3 pseudo binary system. The growth on soda-lime glass substrates improves the crystallinity compared to that on alkali-free glass. An increase in the optical bandgaps of OVC films from 1.85 eV to 1.94 eV was observed with an increase in the Ga content of the films. The deposition of Cu and Se onto Ga2Se3 films resulted in a vertically inhomogeneous film: the bottom layer with the OVC structure and the top layer with the chalcopyrite structure. A solar cell using the CuGa5.0Se8.1 film within a ZnO/CdS/CuGa-Se/Mo/soda-lime glass substrate structure showed an open circuit voltage of 947 mV, an efficiency of 2.2 %, a short circuit current density of 4.5 mA/cm2, and a fill factor of 0.52 (Air Mass 1.5, 0.5 cm2, total area).

scholarly journals Investigation of Rapid Gas-Sensitive Properties Degradation of ZnO–SnO2 Thin Films Grown on the Glass Substrate

Chemosensors ◽  
2020 ◽  
Vol 8 (2) ◽  
pp. 40
Author(s):  
Victor V. Petrov ◽  
Ekaterina M. Bayan ◽  
Soslan A. Khubezhov ◽  
Yuri N. Varzarev ◽  
Maria G. Volkova
Keyword(s):  
Glass Substrate ◽  
Film Surface ◽  
Adsorbed Water ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Temperature Conductivity ◽  
Soda Lime Glass Substrate ◽  
Xps Spectra ◽  
Oh Groups ◽  
Glass Substrates

ZnO–SnO2 films with a thickness of up to 120 nm have been prepared on glass substrates by pyrolysis at 550 °C of three spin-coated organic precursors films. Films of four compositions were obtained on glass substrates. The prepared films were characterized by SEM, XRD, and XPS analysis. Electrophysical studies have shown that the activation energy of the temperature conductivity for all films is equal to 0.75 eV. While the gas-sensitive characteristics by CO treatment in low concentrations at a temperature of 200–300 °C was studied, their rapid degradation was found. Studies using the XPS method have shown that ZnO–SnO2 films contain sodium, which is diffused from the soda-lime glass substrate during the film formation. Studies of XPS spectra after CO treatment have shown that the film surface is almost 50% composed of adsorbed water molecules and OH groups. OH groups are part of the sodium, tin, and zinc hydroxides formed on the surface. In addition, zinc hydrocarbonates are formed on the surface of the films. The detected insoluble compounds lead to the degradation of gas-sensitive properties of ZnO–SnO2 films.

scholarly journals Synthesis and Characterization of System In(O,OH)S/i-ZnO/n+-ZnO

2017 ◽  
Vol 2017 ◽  
pp. 1-7
Author(s):  
William Vallejo ◽  
Carlos Diaz-Uribe ◽  
G. Gordillo
Keyword(s):  
Thin Films ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
Visible Radiation ◽  
Soda Lime Glass Substrate ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Cbd Method

In this work, we fabricated system In(O,OH)S/i-ZnO/n+-ZnO to be used as potential optical window in thin films solar cells. i-ZnO/n+-ZnO thin films were synthesized by reactive evaporation (RE) method and In(O,OH)S thin films were synthesized by chemical bath deposition (CBD) method; all thin films were deposited on soda lime glass substrates. Thin films were characterized through X-ray diffraction (XRD), atomic force microscopy (AFM), and spectral transmittance measurements. Structural results indicated that both thin films were polycrystalline; furthermore, morphological results indicated that both thin films coated uniformly soda lime glass substrate; besides, optical characterization indicated that system had more than 80% of visible radiation transmittance.

Effects of Radio-Frequency Sputtering Power on Low Temperature Formation of MoS2 Thin Films on Soda-Lime Glass Substrates

2020 ◽  
Vol 20 (8) ◽  
pp. 4892-4898
Author(s):  
Zhenqian Zhao ◽  
Min Yu Yin ◽  
Sang Jik Kwon ◽  
Eou-Sik Cho
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Rf Sputtering ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Soda Lime Glass Substrate ◽  
Glass Substrates ◽  
Radio Frequency Sputtering ◽  
Sputtering Power ◽  
Surface Morphologies

For the realization of the economical and reliable fabrication process of molybdenum disulfide (MoS2) layers, MoS2 thin films were directly formed a on soda-lime glass substrate by RF sputtering and subsequent rapid thermal annealing (RTA) at a temperature range of 400–550 °C. Using scanning electron microscopy and atomic force microscopy, it was possible to investigate more stable surface morphologies of MoS2 layers at lower RF sputtering powers irrespective of the RTA temperature. Even at an RTA temperature of less than 550 °C, the Raman exhibited more distinct E12g and A1g peaks for the MoS2 layers sputtered at lower RF powers. The X-ray photoelectron spectroscopy results revealed that more distinct peaks were observed at a higher RTA temperature, and the peak positions were moved to higher energies at a lower RF sputtering power. Based on the Hall measurements, higher carrier densities were obtained for the MoS2 layers sputtered at lower RF powers.

Analysis of Cu(InGa)Se2 Alloy Film Optical Properties and the Effect of Cu Off-Stoichiometry

2005 ◽  
Vol 865 ◽  
Author(s):  
P. D. Paulson ◽  
S. H. Stephens ◽  
W. N. Shafarman
Keyword(s):  
Optical Constants ◽  
Soda Lime ◽  
Alloy Film ◽  
Relative Volume ◽  
Soda Lime Glass ◽  
Distinctive Features ◽  
Glass Substrates ◽  
Wide Range ◽  
Two Phases

AbstractVariable angle spectroscopic ellipsometry has been used to characterize Cu(InGa)Se2 thin films as a function of relative Ga content and to study the effects of Cu off-stoichiometry. Uniform Cu(InGa)Se2 films were deposited on Mo-coated soda lime glass substrates by elemental evaporation with a wide range of relative Cu and Ga concentrations. Optical constants of Cu(InGa)Se2 were determined over the energy range of 0.75–C4.6 eV for films with 0 ≤ Ga/(In+Ga) ≤ 1 and used to determine electronic transition energies. Further, the changes in the optical constants and electronic transitions as a function of Cu off-stoichiometry were determined in Cu-In-Ga-Se films with Cu atomic concentration varying from 10 to 25 % and Ga/(In+Ga) = 0.3. Films with Cu in the range 16–24 % are expected to contain 2 phases so an effective medium approximation is used to model the data. This enables the relative volume fractions of the two phases, and hence composition, to be determined. Two distinctive features are observed in the optical spectra as the Cu concentration decreases. First, the fundamental bandgaps are shifted to higher energies. Second, the critical point features at higher energies become broader suggesting degradation of the crystalline quality of the material.

Selective formation of GaN-based nanorod heterostructures on soda-lime glass substrates by a local heating method

2011 ◽  
Vol 22 (20) ◽  
pp. 205602 ◽  
Author(s):  
Young Joon Hong ◽  
Yong-Jin Kim ◽  
Jong-Myeong Jeon ◽  
Miyoung Kim ◽  
Jun Hee Choi ◽  
...  
Keyword(s):  
Local Heating ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Heating Method ◽  
Glass Substrates ◽  
Selective Formation

scholarly journals Characterization of MgO:Cd thin films grown by SILAR method

2018 ◽  
Vol 96 (7) ◽  
pp. 804-809 ◽  
Author(s):  
Harun Güney ◽  
Demet İskenderoğlu
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Soda Lime ◽  
Morphological Properties ◽  
Emission Region ◽  
Soda Lime Glass ◽  
Silar Method ◽  
Soda Lime Glass Substrate ◽  
X Ray ◽  
Cd Doping

The undoped and 1%, 2%, and 3% Cd-doped MgO nanostructures were grown by SILAR method on the soda lime glass substrate. X-ray diffractometer (XRD), ultraviolet–visible spectrometer, scanning electron microscope, photoluminescence (PL), and X-ray photoelectron spectroscopy measurements were taken to investigate Cd doping effects on the structural, optical, and morphological properties of MgO nanostructures. XRD measurements show that the samples have cubic structure and planes of (200), (220) of MgO and (111), (200), and (220) of CdO. It was observed that band gaps increase with rising Cd doping rate in MgO thin film. The surface morphology of samples demonstrates that MgO nanostructures have been affected by the Cd doping. PL measurements show that undoped and Cd-doped MgO thin films can radiate in the visible emission region.

Flower-like Na2O nanotip synthesis via femtosecond laser ablation of glass

2021 ◽  
Author(s):  
Champika Samarasekera ◽  
Bo Tan ◽  
Krishnan Venkatakrishnan
Keyword(s):  
Laser Ablation ◽  
Femtosecond Laser ◽  
Materials Science ◽  
Femtosecond Laser Ablation ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Soda Lime Glass Substrate ◽  
Current State ◽  
Condition Method ◽  
20 Nm

The current state-of-the-art in nanotip synthesis relies on techniques that utilize elaborate precursor chemicals, catalysts, or vacuum conditions, and any combination thereof. To realize their ultimate potential, synthesized nanotips require simpler fabrication techniques that allow for control over their final nano-morphology. We present a unique, dry, catalyst-free, and ambient condition method for creating densely clustered, flower-like, sodium oxide (Na2O) nanotips with controllable tip widths. Femtosecond laser ablation of a soda-lime glass substrate at a megahertz repetition rate, with nitrogen flow, was employed to generate nanotips with base and head widths as small as 100 and 20 nm respectively, and lengths as long as 10 μm. Control of the nanotip widths was demonstrated via laser dwell time with longer dwell times producing denser clusters of thinner nanotips. Energy dispersive X-ray analysis reveals that nanotip composition is Na2O. A new formation mechanism is proposed, involving an electrostatic effect between ionized nitrogen and polar Na2O. The synthesized nanotips may potentially be used in antibacterial and hydrogen storage applications. PACS: 81 Materials science; 81.07.-b nanoscale materials and structures: fabrication and characterization; 81.16.-c methods of micro- and nanofabrication and processing

Growth of CuInSe2 crystals in Cu-rich Cu–In–Se thin films

1997 ◽  
Vol 12 (6) ◽  
pp. 1456-1462 ◽  
Author(s):  
Takahiro Wada ◽  
Naoki Kohara ◽  
Takayuki Negami ◽  
Mikihiko Nishitani
Keyword(s):  
Growth Model ◽  
Physical Vapor Deposition ◽  
Three Dimensional ◽  
Soda Lime ◽  
Atomic Ratio ◽  
Impurity Phase ◽  
Soda Lime Glass ◽  
Soda Lime Glass Substrate ◽  
Transmission Electron ◽  
Topotactic Reaction

A Cu-rich CuInSe2 (CIS) thin film with an atomic ratio of Cu/In = 3.6 was characterized using high-resolution and analytical transmission electron microscopy (TEM). The film was deposited on a Mo coated soda-lime glass substrate by physical vapor deposition. Rutherford backscattering spectroscopy (RBS) and Auger electron spectroscopy (AES) showed that a secondary impurity phase such as Cu2Se segregated on the CIS surface. The three-dimensional crystallographic relationship between the Cu2Se and CIS was found to be (111)Cu2Se (111)CIS and [011]Cu2Se || [011]CIS where the Cu2Se and CIS had pseudocubic structures with a = 5.8 Å and a = 11.6 Å, respectively. CuPt type CIS could be observed near the interface between the Cu2Se and CIS. A growth model of CIS crystals under Cu and Se excess condition is proposed based on the results of TEM. The characteristics of the CIS growth model in Cu-rich CIS film are summarized as follows: (i) CIS crystals are produced from Cu2Se crystals by a “topotactic reaction,” and (ii) sphalerite and/or CuPt type CIS are produced first after the reaction, and (iii) the metastable sphalerite and/or CuPt type CIS is then transformed to the stable chalcopyrite CIS phase.

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