Optical Functions of Thin-Film Polycrystalline Chalcopyrite CuIn1-xGaxSe2

2003 ◽  
Vol 763 ◽  
Author(s):  
Sung-Ho Han ◽  
Dean H. Levi ◽  
Hamda A. Althani ◽  
Falah S. Hasoon ◽  
Raghu N. Bhattacharya ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Function ◽  
Layer Structure ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Optical Functions ◽  
Atomic Force ◽  
Polycrystalline Thin Films ◽  
Cigs Solar Cells ◽  
Compare And Contrast

AbstractThe highest efficiency CuIn1-xGaxSe2 (CIGS) solar cells use thin-film polycrystalline CIGS absorber layers. We have applied variable angle spectroscopic ellipsometry (VASE) to characterize the dielectric functions of polycrystalline thin films of CIGS with Ga: (In + Ga) ratios ranging from 0.18 to 1.0. The Cu: (In + Ga) ratios in these films are approximately 0.90, which is the ratio that yields the highest efficiency CIGS devices. Spectra were measured over the energy range 0.7 to 5.0 eV at room temperatures. Models used to analyze the ellipsometry data include the full multi-layer structure of the sample, which enables us to report the actual dielectric function rather than the pseudo-dielectric function. We present data on how the critical points change with composition, and compare and contrast our results with measurements of single-crystal and bulk polycrystalline samples reported in the literature. Auger electron spectroscopy, atomic force microscopy, and X-ray diffraction have been used to verify the homogeneity, surface roughness, and phase purity, respectively.

Effect of ultra-thin Cu underlayer on the magnetic properties of Ni80Fe50 / Fe50Mn50 films

1999 ◽  
Vol 562 ◽  
Author(s):  
C. Liu ◽  
L. Shen ◽  
H. Jiang ◽  
D. Yang ◽  
G. Wu ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Force Microscopy ◽  
Exchange Bias ◽  
Film Material ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Maximum Value ◽  
Film Roughness

ABSTRACTThe Ni80Fe20/Fe50Mn50,thin film system exhibits exchange bias behavior. Here a systematic study of the effect of atomic-scale thin film roughness on coercivity and exchange bias is presented. Cu (t) / Ta (100 Å) / Ni80Fe20 (100 Å) / Fe50Mno50 (200 Å) / Ta (200 Å) with variable thickness, t, of the Cu underlayer were DC sputtered on Si (100) substrates. The Cu underlayer defines the initial roughness that is transferred to the film material since the film grows conformal to the initial morphology. Atomic Force Microscopy and X-ray diffraction were used to study the morphology and texture of the films. Morphological characterization is then correlated with magnetometer measurements. Atomic Force Microscopy shows that the root mean square value of the film roughness exhibits a maximum of 2.5 Å at t = 2.4 Å. X-ray diffraction spectra show the films are polycrystalline with fcc (111) texture and the Fe50Mn50 (111) peak intensity decreases monotonically with increasing Cu thickness, t. Without a Cu underlayer, the values of the coercivity and loop shift are, Hc = 12 Oe and Hp = 56 Oe, respectively. Both the coercivity and loop shift change with Cu underlayer thickness. The coercivity reaches a maximum value of Hc= 36 Oe at t = 4 Å. The loop shift exhibits an initial increase with t, reaches a maximum value of HP = 107 Oe at t = 2.4 Å, followed by a decrease with greater Cu thickness. These results show that a tiny increase in the film roughness has a huge effect on the exchange bias magnitude.

scholarly journals Epitaxial Order Driven by Surface Corrugation: Quinquephenyl Crystals on a Cu(110)-(2×1)O Surface

Crystals ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 373 ◽  
Author(s):  
Roland Resel ◽  
Markus Koini ◽  
Jiri Novak ◽  
Steven Berkebile ◽  
Georg Koller ◽  
...  
Keyword(s):  
Thin Film ◽  
Crystal Surface ◽  
Substrate Surface ◽  
Lattice Misfit ◽  
Crystallographic Structure ◽  
Initial Growth ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Lattice Matching ◽  
Atomic Force

A 30 nm thick quinquephenyl (5P) film was grown by molecular beam deposition on a Cu(110)(2×1)O single crystal surface. The thin film morphology was studied by light microscopy and atomic force microscopy and the crystallographic structure of the thin film was investigated by X-ray diffraction methods. The 5P molecules crystallise epitaxially with (201)5P parallel to the substrate surface (110)Cu and with their long molecular axes parallel to [001]Cu. The observed epitaxial alignment cannot be explained by lattice matching calculations. Although a clear minimum in the lattice misfit exists, it is not adapted by the epitaxial growth of 5P crystals. Instead the formation of epitaxially oriented crystallites is determined by atomic corrugations of the substrate surface, such that the initially adsorbed 5P molecules fill with its rod-like shape the periodic grooves of the substrate. Subsequent crystal growth follows the orientation and alignment of the molecules taken within the initial growth stage.

Facile synthesis of TiO2 film on glass for the photocatalytic removal of rhodamine B and tetracycline hydrochloride

2019 ◽  
Vol 9 (5) ◽  
pp. 437-443 ◽  
Author(s):  
Jiaxin Li ◽  
Zhi Chen ◽  
Jianfei Fang ◽  
Qian Yang ◽  
Xiuru Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Organic Pollutants ◽  
Reaction System ◽  
Practical Application ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Photocatalytic Removal ◽  
Coating Method ◽  
Potential Applications

Photocatalysis is one of the efficient approaches for pollution control in water. However, the traditional photocatalysts used for the removal of organic pollutants are in powder form, which makes it difficult to recover them from the suspended reaction system. On the contrary, thin film photocatalyst is easy to be retrieved and possesses unique feature for practical application. In present work, stable TiO2 sol suspension was prepared and amorphous TiO2 thin film was then immobilized upon glass substrate through facile spin coating method. The thickness of film could be simply controlled by changing the number of coatings, and anatase TiO2 film could be formed after calcination. The prepared thin films were characterized with X-ray diffraction (XRD), ultravioletvisible spectrophotometry (UV-vis), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The photodegradations of organic pollutants including colored dye and colorless antibiotic were tested and found to be thickness-dependent. Additionally, the prepared film photocatalst has good stability and may have potential applications in wastewater treatment.

Assembly of thin Film Dielectrics by Sequential Adsorption Reactions of Unilamellar Inorganic Colloids

1996 ◽  
Vol 446 ◽  
Author(s):  
Mingming Fang ◽  
Chy Hyung Kim ◽  
Anthony C. Sutorik ◽  
David M. Kaschak ◽  
Thomas E. Mallouk
Keyword(s):  
Thin Film ◽  
Inorganic Materials ◽  
Silicon Surfaces ◽  
X Ray Diffraction ◽  
Alkali Cations ◽  
Force Microscopy ◽  
Atomic Force ◽  
Sequential Adsorption ◽  
Thin Film Dielectrics ◽  
Layered Perovskites

AbstractSeveral layered inorganic materials (e.g. KCa2Nb3O10, KTiNbO5, and CsPb2Nb3O10) were prepared and their alkali cations exchanged by in aqueous acid. A fraction of the interlayer protons of HCa2Nb3O10 and HTiNbO5 can be replaced by tetra-n-butylammonium (TBA+), by reaction with TBA+OH. Intercalation of a sufficient amount of TBA+ causes complete exfoliation, and single, nanometer-thick sheets of these materials are thus obtained. By sequential adsorption of these two-dimensional colloidal polyanions and polymeric cations, monolayer sheets of layered perovskites can be stacked on silicon surfaces to give thin films of any desired thickness. The layered materials, the exfoliated colloids, and the thin film multilayers on silicon were studied by X-ray diffraction, transmission electronic microscopy (TEM), ellipsometry, and atomic force microscopy (AFM). The dielectric properties of the related bulk materials were measured, and are also discussed.

Electrochemical Behavior of LiFePO4 Thin Film Prepared by RF Magnetron Sputtering in Li2SO4 Aqueous Electrolyte

2015 ◽  
Vol 14 (01n02) ◽  
pp. 1460027 ◽  
Author(s):  
Jiaxiong Wu ◽  
Wei Cai ◽  
Guangyi Shang
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Ion Diffusion ◽  
X Ray Diffraction ◽  
Electrochemical Tests ◽  
Force Microscopy ◽  
Atomic Force ◽  
Li Ion ◽  
Deposited Film

LiFePO 4 films were deposited on Au / Si substrate by radio-frequency magnetron sputtering. The effect of annealing on the crystallization and morphology of LiFePO 4 thin film has been investigated. X-ray diffraction revealed that the films through annealing were well crystallized compared with as-deposited films. The surface morphology of the thin film was also observed by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Electrochemical tests in 1M Li 2 SO 4 showed that the annealed thin film in 500°C exhibits larger Li -ion diffusion coefficient (3.46 × 10-7 cm2s-1) than as-deposited film and powder. Furthermore, cyclic voltammetry demonstrate a well-defined lithium intercalation/deintercalation reaction at around 0.45 V versus SCE (i.e., 3.6 V versus Li +/ Li ), suggesting that the annealed LiFePO 4 thin film is a promising candidate cathode film for lithium microbatteries.

Development and Characterization for Solar Photovoltaic Cell Based on Cu2ZnSn(S0.2Se0.8)4 Thin Film

2020 ◽  
Vol 12 (3) ◽  
pp. 306-316
Author(s):  
Sadanand ◽  
Pravin Kumar Singh ◽  
Pooja Lohia ◽  
D. K. Dwivedi ◽  
Fahad A. Alharthi ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Photovoltaic Cell ◽  
Maximum Efficiency ◽  
Solar Photovoltaic ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Photovoltaic Solar Cells ◽  
Efficient Solar Cell

CZTSSe materials have been studied for a highly efficient solar cell. In this paper, Cu2ZnSn(S0.2Se0.8)4 (CZTSSe) thin film was prepared and its application to photovoltaic solar cells was studied. The CZTSSe thin film was deposited using facile thermal evaporation process and examined by various techniques including X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), atomic force microscopy (AFM), Raman-scattering and Fourier transform infrared (FTIR) spectroscopy. Interestingly, the synthesized CZTSSe thin are exhibiting broad-spectrum absorption. The I–V characteristics were performed to study the photoresponse of CZTSSe nanofilm. By the numerical simulation, the observed maximum efficiency of the fabricated device was ∼16.5%. Therefore, the present study reveals that Cu2ZnSn(S0.2Se0.8)4 thin films could be used as an effective absorber layer for efficient solar cells applications.

STRUCTURE AND OPTICAL PROPERTIES OF InN THIN FILM GROWN ON SiC BY REACTIVE RF MAGNETRON SPUTTERING

2013 ◽  
Vol 20 (01) ◽  
pp. 1350008 ◽  
Author(s):  
M. AMIRHOSEINY ◽  
Z. HASSAN ◽  
S. S. NG ◽  
G. ALAHYARIZADEH
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Root Mean Square Roughness ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Growth Orientation ◽  
Atomic Force

The structure and optical properties of InN thin film grown on 6H-SiC by reactive radio frequency magnetron sputtering were investigated. X-ray diffraction measurement shows that the deposited InN film has (101) preferred growth orientation and wurtzite structure. Atomic force microscopy results reveal smooth surface with root-mean-square roughness around 3.3 nm. One Raman-active optical phonon of E2(high) and two Raman- and infrared-active modes of A1(LO) and E1(TO) of the wurtzite InN are clearly observed at 488.7, 582.7 and 486 cm-1, respectively. These results leading to conclude that the wurtzite InN thin film with (101) preferred growth orientation was successfully grown on 6H-SiC substrate.

The Effect of Solution Temperature on Electrodeposit-ZnO Thin Film

2013 ◽  
Vol 594-595 ◽  
pp. 1131-1135 ◽  
Author(s):  
Fariza Mohamad ◽  
Connie Anak Abang ◽  
Nik Hisyamudin Muhd Nor ◽  
Masanobu Izaki
Keyword(s):  
Thin Film ◽  
Zinc Nitrate ◽  
Solution Temperature ◽  
Zno Thin Film ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Nitrate Hydrate ◽  
Atomic Force ◽  
Xrd Patterns

Zinc Oxide (ZnO) has been successfully electrodeposited on a fluorine doped tin oxide (FTO) coated glass substrates using a simple aqueous solution containing zinc nitrate hydrate by low temperature galvanostatic electrolysis. The solution temperature of zinc nitrate hydrate was varied from 60°C to 75°C in order to investigate the effect of solution temperature on electrodeposit-ZnO thin film. The properties of ZnO film were investigated by X-ray diffraction (XRD), Field-Emission Scanning electron microscope (FE-SEM) and Atomic force microscopy (AFM). The solution temperature shows a significant effect on structural and morphological of deposit-ZnO. The XRD patterns exhibited the increment of (002)-ZnO peak when the solution temperature increased and the highest peak was observed at 75°C. The morphology of ZnO was changed from planar to nanopillar with the solution temperature. In conclusion, ZnO nanopillar with an excellent structural properties was obtained at solution temperature of 75°C.

Growth and Morphology of Pentacene Films on Oxide Surfaces

2001 ◽  
Vol 708 ◽  
Author(s):  
Ricardo Ruiz ◽  
Leonard C. Feldman ◽  
Richard F. Haglund ◽  
Rodney A. McKee ◽  
Norbert Koch ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Molecule ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Mode Analysis ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Different Temperatures ◽  
High Dielectric

ABSTRACTPentacene thin films were grown in ultra high vacuum on amorphous SiO2 and on a high dielectric constant material, crystalline BaTiO3. During pentacene deposition, substrates were held at three different temperatures (-650, 250 and 750 C). In general, three different morphologies were identified: a first closed interfacial layer, a thin film mode composed of faceted grains with single molecule step height, and a volume mode with features substantially higher than those of the thin film mode. Analysis was carried out by atomic force microscopy and in some cases by synchrotron X-ray diffraction.

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