MBE Growth of GaAs on Porous Silicon
Keyword(s):
ABSTRACTGaAs layers have been grown on porous silicon (PS) substrates by molecular beam epitaxyNo surface morphology deterioration was observed onGaAs-on-PS layers in spite of the roughness of PS. A 10% Rutherford backscattering spectroscopy (RBS) channeling minimum yield for GaAs-on-PS layers as compared to 16% for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy (TEM) reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers.
1996 ◽
Vol 11
(6)
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pp. 1398-1402
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Keyword(s):
2016 ◽
Vol 30
(20)
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pp. 1650269
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1983 ◽
Vol 1
(2)
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pp. 246
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