Defect Structure of Cu-Rich and In-Rich Chalcopyrite CuInSe2 Films Grown on GaAS

1995 ◽  
Vol 399 ◽  
Author(s):  
Olof Hellman ◽  
Shun-Ichiro Tanaka ◽  
Shigeru Niki ◽  
Paul Fons
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Defect Structure ◽  
Molecular Beam ◽  
Stacking Faults ◽  
Cation Sublattice ◽  
Grown Film ◽  
High Concentration ◽  
Transmission Electron ◽  
Domain Boundaries

ABSTRACTUsing Transmission Electron Microscopy, we examine the defect structure of Cu-rich and In-rich CuInSe2 films grown by Molecular Beam Epitaxy on GaAs (100) substrates. A surprisingly high density of cation sublattice stacking faults on (001) planes are observed in the Cu-rich films. Because these stacking faults are extremely flat and extend thousands of Ångstroms over the surface, and because they are not observed in other, non-Cu-rich films, we argue that they are a consequence of a surface structural change during growth, induced by the excess Cu. Two other types of defects are also observed: near the CuInSe2/GaAs interface, there is a high concentration of dislocations, stacking faults and domain boundaries. In the In-rich films, stacking faults and twin-type defects on {112} planes extend throughout the thickness of the grown film.

Cation sublattice stacking faults in Cu-rich chalcopyrite CuInSe2

1996 ◽  
Vol 11 (6) ◽  
pp. 1398-1402 ◽  
Author(s):  
Olof Hellman ◽  
Shun-ichiro Tanaka ◽  
Shigeru Niki ◽  
Paul Fons
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam Epitaxy ◽  
Surface Structure ◽  
Molecular Beam ◽  
Stacking Faults ◽  
Chalcopyrite Structure ◽  
Cation Sublattice ◽  
Transmission Electron

Using transmission electron microscopy, we have found stacking faults on the cation sublattice in the chalcopyrite structure of CuInSe2. These films are grown by molecular beam epitaxy under Cu-rich conditions. These stacking faults are found to extend large distances in the plane of the film, and are not found to be present in samples not grown in Cu-rich conditions. We suggest that this defect is triggered by a Cu-induced transformation of the surface structure of the growing film.

A Study of the Defect Structure in GaAS1−xPx/GaAs AS x<0.25

1993 ◽  
Vol 317 ◽  
Author(s):  
G. Aragon ◽  
M.J. De Castro ◽  
S.I. Molina ◽  
Y. Gonzalez ◽  
L. Gonzalez ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam Epitaxy ◽  
Defect Structure ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Multiple Cracks ◽  
Transmission Electron ◽  
Phosphorous Content

ABSTRACTThe defect structure of GaAsP layer grown by Atomic Layer Molecular Beam Epitaxy on (001) GaAs substrate has been studied by Transmission Electron Microscopy. The phosphorous content and the epilayer thickness have been changed below 25% and 1μm respectively. Three kinds of defect structure have been found: a) α-δ fringes at the interface for coherent epilayer, b) Misfit dislocation for thin epilayers and c) Multiple cracks normal to the interface and parallel to one <110> direction for thick epilayers.

MBE Growth of GaAs on Porous Silicon

1987 ◽  
Vol 91 ◽  
Author(s):  
T. L. Lin ◽  
L. Sadwick ◽  
K. L. Wang ◽  
S. S. Rhee ◽  
Y. C Kao ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Porous Silicon ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Stacking Faults ◽  
Rutherford Backscattering ◽  
Mbe Growth ◽  
Transmission Electron ◽  
Minimum Yield

ABSTRACTGaAs layers have been grown on porous silicon (PS) substrates by molecular beam epitaxyNo surface morphology deterioration was observed onGaAs-on-PS layers in spite of the roughness of PS. A 10% Rutherford backscattering spectroscopy (RBS) channeling minimum yield for GaAs-on-PS layers as compared to 16% for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy (TEM) reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers.

Dependence of the Defects Present in InAlAs/InP on the Substrate Temperature

1991 ◽  
Vol 240 ◽  
Author(s):  
F. Peiro ◽  
A. Cornet ◽  
A. Herms ◽  
J. R. Morante ◽  
A. Georgakilas ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Stacking Faults ◽  
Structural Defects ◽  
Threading Dislocations ◽  
Transmission Electron ◽  
Inp Substrates

ABSTRACTThe crystalline quality of InAlAs layers, grown by Molecular Beam Epitaxy on (100) InP substrates, has been investigated by Transmission Electron Microscopy in order to study the influence of InAlAs growth temperature (Tg) on the density of structural defects present in the layers. Tg was varied from 300°C up to 530°C. The density of stacking faults and threading dislocations drops dramatically as Tg increas

Imaging of Defects in Cadmium Telluride using High Resolution Transmission Electron Microscopy

1980 ◽  
Vol 2 ◽  
Author(s):  
F. A. Ponce ◽  
T. Yamashita ◽  
R. H. Bube ◽  
R. Sinclair
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Cadmium Telluride ◽  
Defect Structure ◽  
Stacking Faults ◽  
Image Contrast ◽  
Transmission Electron

ABSTRACTThe defect structure of cadmium telluride has been investigated using high resolution transmission electron microscopy. The variation of the TEM images with the defocus value is discussed, and defect symmetry considerations are used to correlate the image contrast characteristics with the lattice struc ture. Experimental micrographs of stacking faults and dislocations in the structure are analyzed.

Controlled Growth of GaAs/AlAs(111)B Superlattices

1992 ◽  
Vol 263 ◽  
Author(s):  
J.E. Angelo ◽  
J.W. Hoehn ◽  
A.M. Dabiran ◽  
P.I. Cohen ◽  
W.W. Gerberich
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Defect Structure ◽  
Molecular Beam ◽  
Substantial Reduction ◽  
Flux Ratio ◽  
Cross Sectional ◽  
Temperature Growth ◽  
Transmission Electron

ABSTRACTIn this study, transmission electron microscopy (TEM) was used to investigate the growthconditions which produce the highest quality GaAs(111)B films by molecular beam epitaxy (MBE). Low-temperature growth using both As4 and arsine as an As2 source produced highly twinned structures, although the use of As4 provided for a smoother surface and slightly different defect structure. Two distinct twin boundaries, (112)A and (112)B, were identified by cross-sectional transmission electron microscopy (XTEM). The (112)A defect could be over-grown by a subsequent high temperature growth but the roughness associated with the (112)B defects only increased with further growth. High temperature growth of GaAs and AlAs films, while maintaining the GaAs(11)surface reconstruction, resulted in substantial reduction in the number of twins boundaries. We also found that GaAs(111)B layer quality and surface morphology can be further improved by a high temperature growth with low arsenic to Ga flux ratio of I to 1.5 ona slightly misoriented substrate.

MICROSTRUCTURE AND PROPERTIES OF FERROELECTRIC Bi4Ti3O12 THIN FILMS

1999 ◽  
Vol 13 (26) ◽  
pp. 933-945 ◽  
Author(s):  
B. JIANG ◽  
J. L. PENG ◽  
L. A. BURSILL ◽  
H. WANG
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Defect Structure ◽  
Bismuth Titanate ◽  
Stacking Faults ◽  
Film Morphology ◽  
Defect Structures ◽  
Transmission Electron ◽  
Simulated Images

The film morphology and defect structure of ferroelectric bismuth titanate thin films are studied by high resolution transmission electron microscopy. As-grown and RTA-processed thin films have similar defect structures, consisting of stacking faults and complex intergrowth defect structures. The as-grown specimens prepared at low temperature had smaller particle size with higher density of these defects compared to RTA-processed samples. Detailed atomic structure models for the stacking faults and intergrowth defect structures are proposed and the computer-simulated images are compared with experiment.

Nucleation of Disorder in Fe3Al Alloys

1967 ◽  
Vol 25 ◽  
pp. 312-313
Author(s):  
P. R. Swann ◽  
W. R. Duff ◽  
R. M. Fisher
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Annealing Temperature ◽  
Antiphase Domain ◽  
Effect Of Temperature ◽  
Domain Structures ◽  
Transmission Electron ◽  
Domain Boundaries ◽  
Higher Temperature ◽  
The One

Recently we have investigated the phase equilibria and antiphase domain structures of Fe-Al alloys containing from 18 to 50 at.% Al by transmission electron microscopy and Mössbauer techniques. This study has revealed that none of the published phase diagrams are correct, although the one proposed by Rimlinger agrees most closely with our results to be published separately. In this paper observations by transmission electron microscopy relating to the nucleation of disorder in Fe-24% Al will be described. Figure 1 shows the structure after heating this alloy to 776.6°C and quenching. The white areas are B2 micro-domains corresponding to regions of disorder which form at the annealing temperature and re-order during the quench. By examining specimens heated in a temperature gradient of 2°C/cm it is possible to determine the effect of temperature on the disordering reaction very precisely. It was found that disorder begins at existing antiphase domain boundaries but that at a slightly higher temperature (1°C) it also occurs by homogeneous nucleation within the domains. A small (∼ .01°C) further increase in temperature caused these micro-domains to completely fill the specimen.

A crystallographic analysis of the CoSi/Si(111) interface using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 574-575
Author(s):  
A.C. Daykin ◽  
C.J. Kiely ◽  
R.C. Pond ◽  
J.L. Batstone
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Defect Structure ◽  
Room Temperature ◽  
Theoretical Method ◽  
Crystallographic Analysis ◽  
Si Substrate ◽  
Transmission Electron ◽  
Theoretical Predictions

When CoSi2 is grown onto a Si(111) surface it can form in two distinct orientations. A-type CoSi2 has the same orientation as the Si substrate and B-type is rotated by 180° degrees about the [111] surface normal.One method of producing epitaxial CoSi2 is to deposit Co at room temperature and anneal to 650°C.If greater than 10Å of Co is deposited then both A and B-type CoSi2 form via a number of intermediate silicides .The literature suggests that the co-existence of A and B-type CoSi2 is in some way linked to these intermediate silicides analogous to the NiSi2/Si(111) system. The phase which forms prior to complete CoSi2 formation is CoSi. This paper is a crystallographic analysis of the CoSi2/Si(l11) bicrystal using a theoretical method developed by Pond. Transmission electron microscopy (TEM) has been used to verify the theoretical predictions and to characterise the defect structure at the interface.

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