scholarly journals Cultural, Morphological and Pathogenic Characterization of Alternaria porri Causing Purple Blotch of Onion

2016 ◽  
Vol 44 (1) ◽  
pp. 222-227 ◽  
Author(s):  
Sayed Mohammad MOHSIN ◽  
Md. Rafiqul ISLAM ◽  
Abu Noman Faruq AHMMED ◽  
Hosna Ara Chowdhury NISHA ◽  
Mirza HASANUZZAMAN
Keyword(s):  
Growth Rate ◽  
Pathogenicity Test ◽  
Diseased Leaf ◽  
Vertical Separation ◽  
Concentric Ring ◽  
Brown Colour ◽  
Ring Shape ◽  
Alternaria Porri ◽  
Conidia Production

Twenty seven (27) isolates of Alternaria porri were isolated from diseased leaf samples collected from different onion growing regions of Bangladesh and characterized for cultural, morphological and pathogenic variabilities. A. porri colonies colony colour ranged between light to dark olivacious and grayish white with irregular, regular with concentric ring and regular without concentric ring shape. Margin of colonies were entire, irregular and wavy with effuse, fluffy and velvety texture. Isolates impregnated media with colour ranged between grey to brown on the reverse of the plates. Growth rate of isolates ranged between 2.433 and 3.950 mm/day with fast growth in isolate DSTR 02 and least in MMBH. Morphological variation in conidia production was between 7.720×103 to 47.02×103 per mm2 with sporulation time 3.33 to 11.00 days. The conidial shape was straight to curve with light to deep brown colour. The number of horizontal and vertical separation in the conidia ranged from 3.00 to 6.00 × 1.00 to 2.00 with size from 11.20 to 39.20 × 4.76 to 11.43 µm. In pathogenicity test isolates also exhibited variations in size of the lesions (2.77 to 7.55 mm) produced on onion leaves. The results demonstrate existence of considerable variation in cultural, morphological, and pathogenic characters of A. porri isolates prevalent in Bangladesh environment.

Preparation and characterization of epitaxial iron oxide films

1998 ◽  
Vol 13 (7) ◽  
pp. 2003-2014 ◽  
Author(s):  
Y. Gao ◽  
Y. J. Kim ◽  
S. A. Chambers
Keyword(s):  
Growth Rate ◽  
Iron Oxide ◽  
Oxygen Plasma ◽  
Film Surface ◽  
Surface Region ◽  
Growth Conditions ◽  
Epitaxial Films ◽  
Pure Phase ◽  
Iron Oxide Films

Well-ordered, pure-phase epitaxial films of FeO, Fe3O4, and γ–Fe2O3 were prepared on MgO(001) by oxygen-plasma-assisted MBE. The stoichiometries of these thin films were controlled by varying the growth rate and oxygen partial pressure. Selective growth of γ–Fe2O3 and α–Fe2O3 was achieved by controlling the growth conditions in conjunction with the choice of appropriate substrates. Growth of the iron oxide epitaxial films on MgO at ≥350 °C is accompanied by significant Mg outdiffusion. The FeO(001) film surface exhibits a (2 × 2) reconstruction, which is accompanied by a significant amount of Fe3+ in the surface region. Fe3O4 (001) has been found to reconstruct to a structure. γ–Fe23 (001) film surface is unreconstructed.

Effect of Argon during Diamond Deposition by Hot Filament Chemical Vapor Deposition

2016 ◽  
Vol 869 ◽  
pp. 721-726 ◽  
Author(s):  
Divani C. Barbosa ◽  
Ursula Andréia Mengui ◽  
Mauricio R. Baldan ◽  
Vladimir J. Trava-Airoldi ◽  
Evaldo José Corat
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Gas Mixture ◽  
X Ray Diffraction ◽  
Hot Filament ◽  
Argon Content

The effect of argon content upon the growth rate and the properties of diamond thin films grown with different grains sizes are explored. An argon-free and argon-rich gas mixture of methane and hydrogen is used in a hot filament chemical vapor deposition reactor. Characterization of the films is accomplished by scanning electron microscopy, Raman spectroscopy and high-resolution x-ray diffraction. An extensive comparison of the growth rate values and films morphologies obtained in this study with those found in the literature suggests that there are distinct common trends for microcrystalline and nanocrystalline diamond growth, despite a large variation in the gas mixture composition. Included is a discussion of the possible reasons for these observations.

scholarly journals Morphological and cultural characterization of Phyllosticta zingiberi (Ramkr.) causing leaf spot disease of ginger

2017 ◽  
Vol 9 (3) ◽  
pp. 1662-1665
Author(s):  
Barun Rai ◽  
Sekhar Bandyopadhyay ◽  
Avisak Thapa ◽  
Adeetya Rai ◽  
Deewakar Baral
Keyword(s):  
Carbon Source ◽  
Leaf Spot ◽  
Microscopic Observation ◽  
Zingiber Officinale ◽  
Maximum Growth ◽  
Morphological Characters ◽  
Leaf Spot Disease ◽  
Malt Extract ◽  
Brown Colour

Isolation of ginger (Zingiber officinale) leaf spot pathogen form the UBKV farm field was done in the laboratory. The isolated pathogen was identified as Phyllosticta zingiberi on the basis of morphological characters as documented in taxonomic keys. The microscopic observation revealed that the pycnidia were globose to subglobose with dark brown colour measuring 124.16 μm × 2.35 μm in average. The pycnidio spores were hyaline, oval to bullet shaped, monoguttulate measuring 4.02 μm × 2.35 μm in average. Among the different media tested for growth highest growth was recorded in Oat meal agar (26.44 cm2) followed by malt extract agar (24.04 cm2) which was statistically at par. The temperature of 25˚C favoured maximum growth (24.20 cm2). However, higher sporulation was observed in 30˚C. Among the different carbon source tested, mannitol supported the highest growth of the pathogen (27.67 cm2).

Characterization of Ultra-Fast Phase Change Optical Disk with GaSb Material

2003 ◽  
Vol 803 ◽  
Author(s):  
Kazunori Ito ◽  
Hiroko Tashiro ◽  
Makoto Harigaya ◽  
Eiko Suzuki ◽  
Katsuhiko Tani ◽  
...  
Keyword(s):  
Growth Rate ◽  
Crystal Growth ◽  
Melting Point ◽  
Phase Change ◽  
Crystal Growth Rate ◽  
Crystallization Mechanism ◽  
Fast Phase ◽  
Optical Disks ◽  
Digital Versatile Disk

ABSTRACTWe studied the crystallization mechanism of ultra-fast phase change optical disks with recording layers made of GaSb material for digital versatile disk (DVD) systems. The results of a static recording test and an amorphous mark formation simulation suggest that GaSb maintains a high crystal growth rate even at temperatures 150 degrees lower than the material's melting point. Disks with recording layers made of this material have a write speed margin ranging from DVD 3× to 8× or more.

scholarly journals NIMG-43. LONGITUDINAL TRACKING AND GROWTH RATE CHARACTERIZATION OF BRAIN METASTASES ON MAGNETIC RESONANCE IMAGING

2019 ◽  
Vol 21 (Supplement_6) ◽  
pp. vi170-vi171
Author(s):  
Jay Patel ◽  
Andrew Beers ◽  
Ken Chang ◽  
James Brown ◽  
Katharina Hoebel ◽  
...  
Keyword(s):  
Growth Rate ◽  
Brain Metastases ◽  
Brain Regions ◽  
Brain Atlas ◽  
Post Contrast ◽  
Average Growth ◽  
Imaging Protocol ◽  
Time Points ◽  
Lesion Growth

Abstract PURPOSE Measuring treatment response is vital for assessing efficacy of treatment regimen for patients with brain metastases (BM). Unfortunately, manual delineation of all lesions on MRI across time-points is prohibitively time-consuming, making it infeasible to track individual lesion growth/shrinkage rates as part of the clinical workflow. To overcome this challenge, we propose a deep learning approach to segment all BM, and furthermore, show that certain brain regions are more prone to high-growth rate lesions. METHODS 163 longitudinal MRIs from 77 patients with MPRAGE-post contrast imaging protocol were prospectively obtained from Massachusetts General Hospital (MGH). An expert neuro-oncologist provided ground truth segmentations for all patients. A 3D U-Net architecture was trained to automatically segment BM; training was stopped when validation set Dice score plateaued to prevent overfitting. To enable lesion tracking, all time-points per patient were affinely registered to each other. Every lesion was subsequently classified based on its growth rate (responder: overall lesion shrinkage; inconclusive: 0% to 40% lesion growth; non-responder: more than 40% lesion growth). Characterization of global lesion growth rate patterns was accomplished by affinely registering all time-points to the MNI brain atlas. Segmented lesions were projected onto the atlas, which was qualitatively analyzed to identify spatial regions composed primarily of one class of lesion. RESULTS For automatic segmentation, we report a mean dice score of 0.778, 0.737, and 0.704 on training, validation, and testing sets respectively. Furthermore, we find that the largest BM with the highest average growth rate (non-responders) tend to be located in the posterior frontal/parietal lobes, while smaller, lower growth rate lesions (responders) tend to be localized in the frontal lobes. The posterior fossa was found to be heterogeneous in lesion size and growth rate. CONCLUSION We developed automatic metastatic lesion tracking over time-points and identified brain regions associated with differing growth rate lesions.

scholarly journals Histopathology and growth rate of interval breast carcinoma: Characterization of different subgroups

Cancer ◽  
1996 ◽  
Vol 78 (6) ◽  
pp. 1220-1228 ◽  
Author(s):  
Cecile T. Brekelmans ◽  
Joost M. van Gorp ◽  
Petra H. Peeters ◽  
Hubertine J. Collette
Keyword(s):  
Growth Rate ◽  
Breast Carcinoma

scholarly journals The formation of Hfr strains inEscherichia coliK12

1967 ◽  
Vol 9 (1) ◽  
pp. 35-47 ◽  
Author(s):  
Paul Broda
Keyword(s):  
Growth Rate ◽  
Bacterial Chromosome ◽  
Nutritional Requirements ◽  
Isolation And Characterization

The isolation and characterization of an isogenic series of twelve Hfr strains is described. From their points of origin it was concluded that the sex factor integrates at a limited number of sites on the bacterial chromosome. Although the nutritional requirements of these Hfr strains were similar to those of the parent F+strain, it was observed that one group had a markedly slower growth rate. The relevance of these observations to theories on the nature of F+fertility and on the formation of Hfr strains is discussed.

Epitaxial growth and characterization of cubic GaN on BP/Si(100) substrates

2011 ◽  
Vol 1396 ◽  
Author(s):  
Suzuka Nishimura ◽  
Muneyuki Hirai ◽  
Kazutaka Terashima
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Growth Temperature ◽  
Cubic Gan ◽  
Gan On Si

ABSTRACTWe have focused to grow cubic GaN (c-GaN) on Si(100) substrates using boronmonophosphide (BP) buffer crystals. The growth of GaN was carried out by MOVPE on BP/Si(100) substrate of 2 inches in diameter. By the several evaluations, it was recognized that when the growth temperature is around 750˚C, c-GaN was dominant. The typical growth rate was about 0.5μm/h. We obtained c-GaN layer over 2.5μm thick without cracking.

Growth Rate and Characterization of Silicon Oxide Films Grown in  N 2 O  Atmosphere in a Rapid Thermal Processor

1994 ◽  
Vol 141 (1) ◽  
pp. 259-263 ◽  
Author(s):  
P. Lange ◽  
H. Bernt ◽  
E. Hartmannsgruber ◽  
F. Naumann
Keyword(s):  
Growth Rate ◽  
Silicon Oxide ◽  
Oxide Films
Sign in / Sign up

Export Citation Format

Share Document