Temperature and Composition Dependence of Electrical Conductivity of Ge10 Se90-x Bix (x=0, 2, 4, 6, 8, 10) Chalcogenide Glasses

2015 ◽  
Vol 3 (1) ◽  
Author(s):  
Shiveom Srivastava ◽  
S. K. Srivastava ◽  
Krishna K. Srivastava ◽  
Narayan P. Srivastava
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Chalcogenide Glasses ◽  
Conduction Mechanism ◽  
Composition Dependence ◽  
Arrhenius Equation ◽  
Atomic Weight ◽  
Melt Quenching ◽  
Characteristic Curves ◽  
Glassy Systems

Electrical conductivity of Ge10 Se90-x Bix (x=0,2,4,6,8,10) glassy systems prepared by melt quenching technique has been studied at different temperature in bulk form through I-V characteristic curves. It has been observed that the electrical conductivity increases as the Bi concentration increases up to 4 atomic weight percentages and on further addition of Bi it reduces. The variation in electrical conductivity with Bi concentration is attributed to the Se-Bi bond concentration. Using the Arrhenius equation of conductivity, the activation energy of conduction is evaluated. The effect of Bi concentration on activation energy has also been studied. It is quite evident from results that Poole-Frankel and Rechardson-Schottky conduction mechanism hold good for conduction in these glasses.

scholarly journals INVESTIGATION OF ELECTRICAL CONDUCTION IN VANADATE BASED GLASSES

2013 ◽  
Vol 22 ◽  
pp. 255-260 ◽  
Author(s):  
R. V. BARDE ◽  
S. A. WAGHULEY
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Electrical Conduction ◽  
Arrhenius Equation ◽  
Localized States ◽  
Melt Quenching ◽  
Temperature Range ◽  
Dc Electrical Conductivity ◽  
Glassy Systems

The binary glassy systems 60V2O5-(40-x)P2O5 –xB2O3 were prepared by melt quenching technique. The mole of B2O3 was varies from 5 to 20 mol % with constant mol % of V2O5 during preparation of glass samples. The dc electrical conductivity of samples was measured in temperature range 303-473 K and found to be higher for sample 60 V2O5-20P2O5 –20B2O3 . Using the Arrhenius equation of conductivity, the activation energy of conduction is estimated. The conduction in these glasses is takes place by phonon-assisted hopping between the localized states.

Chalcogenide Glasses

MRS Bulletin ◽  
1987 ◽  
Vol 12 (5) ◽  
pp. 36-39 ◽  
Author(s):  
P. Craig Taylor
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Periodic Table ◽  
Chalcogenide Glasses ◽  
Charge Carriers ◽  
Arsenic Trisulfide ◽  
Glass Forming ◽  
Optical Gap ◽  
Arsenic Triselenide

Although there are some significant exceptions, most important glass-forming systems contain elements from the sixth, or chalcogenide, column of the periodic table (oxygen, sulfur, selenium, or tellurium). The glasses which contain oxygen are typically insulators, while those which contain the heavier chalcogen elements are usually semiconductors. Even though oxygen is technically a chalcogen element, the term “chalcogenide glass” is commonly used to denote those largely covalent, semiconducting glasses which contain sulfur, selenium, or tellurium as one of the constituents.The chalcogenide glasses are called semiconducting glasses because of their electrical properties. The electrical conductivity in these glasses depends exponentially on the temperature with an activation energy which is approximately one half of the optical gap. In this sense these glasses exhibit electrical properties similar to those in intrinsic crystalline semiconductors. The analogy is by no means perfect. The mobilities for the charge carriers in these glasses are very low (< 10 cm2/V-s) compared to crystalline semiconductors, and there are even discrepancies in determining the sign of the charge carriers from measurements of the Hall effect and the Seebeck effect.The first detailed studies of the chalcogenide glasses were performed about 30 years ago. For many years the prototype compositions have been selenium (Se), arsenic triselenide (As2Se3) or arsenic trisulfide (As2S3), and germanium diselenide (GeSe2) or germanium disulfide (GeS2).

Electrical Conductivity and Density of the Molten CaCl2-NaCl-Al2O3 Electrolyte Materials

2010 ◽  
Vol 152-153 ◽  
pp. 19-24
Author(s):  
Hong Wei Xie ◽  
Jin Xia Wang ◽  
Yu Chun Zhai ◽  
Cheng De Li ◽  
Xiao Yun Hu
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Low Temperature ◽  
Arrhenius Equation ◽  
Decisive Factor ◽  
Aluminium Electrolysis ◽  
Cell Constant ◽  
Measurement Temperature ◽  
Temperature Ranges ◽  
Function Relationship

The low-melting CaCl2-NaCl-Al2O3 materials were used as the electrolyte of the low temperature aluminium electrolysis. The electrical conductivity and density of the materials were measured by the Continuously Varying Cell Constant Technique, ac-techniques, and Archimedes method. The materials were composed of 71wt.%~87wt.%CaCl2 (corresponding NaCl), NaCl and Al2O3(without and saturated). The measurement temperature ranges were 550°C~800°C. The results showed that Additive Al2O3 decreased the electrical conductivity of the materials, and resulted in the increase of the activation energy of conductance. The function relationship between the electrical conductivity and temperature was linear, and conformed to the Arrhenius equation. Increasing the CaCl2 content decreased the electrical conductivity of the materials, but the density was increased. With the increase of the CaCl2, the decrease scope of the electrical conductivity was small and the increase trend of the density was slow down. The decisive factor of the electrical conductivity of the materials was temperature.

scholarly journals Dependence of Electrical Properties on Frequency and Temperature for Novel Cyclopentenone Derivatives

2020 ◽  
Vol 1 (1) ◽  
pp. 13-25
Author(s):  
Salama A. H.
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Arrhenius Equation ◽  
Charge Carriers ◽  
Frequency Range ◽  
Ac Electrical Conductivity ◽  
Dc Electrical Conductivity ◽  
Arrhenius Relation

Electrical properties of some new cyclopentenone derivatives have been studied. The structures of prepared samples were characterized by (UV), (XRD) and (SEM). The dependence of electrical properties such as σdc , σac , ɛ' and ɛ'' on frequency and temperature were studied at frequency range from 50 Hz to 5 MHz and the temperature range from 25oC to 140oC. It was found that, ɛ' decreased with increasing frequency while it increases with increasing temperatures within the used ranges. Moreover, dielectric constant is structural dependent which is obvious from the variation of dielectric constant for each sample. Ac-electrical conductivity increased with increasing frequency which was attributed to the polarization of the charge carriers. The temperature dependence of dc-electrical conductivity show typical Arrhenius relation for the three prepared samples. The activation energy calculated from Arrhenius equation and the results are discussed in detailed.

Low-temperature electrical conductivity of ternary chalcogenide glasses in the system Se–S

2002 ◽  
Vol 80 (5) ◽  
pp. 599-604 ◽  
Author(s):  
O El-Shazly ◽  
T Ramadan ◽  
M El-Hawary ◽  
N El-Anany ◽  
H A Motaweh ◽  
...  
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Low Temperature ◽  
Temperature Region ◽  
Chalcogenide Glasses ◽  
Measured Temperature ◽  
Exponential Factor ◽  
Ternary Chalcogenide ◽  
Extended States ◽  
Made In

Ternary chalcogenide glasses in the system Se–S were prepared by quenching from the melt. Measurements of the temperature dependence of direct current (dc) electrical conductivity have been made in the temperature interval from room temperature down to 30 K. Two types of conduction mechanisms were found to dominate in the measured temperature range, namely band conduction through extended states (which dominates at the high-temperature region) and hopping around the Fermi level (which dominates at the low-temperature region). The dc conductivity activation energy and pre-exponential factor were calculated for the two types of conduction. It was found that the activation energy and the pre-exponential factor are composition dependent. PACS Nos.: 72.20-i, 73.61.Jc, and 81.05.Gc

Analysis of Electric Conductive Activation Energy from the Electric Conductivity of Silicate and Borate Glasses

2008 ◽  
Vol 368-372 ◽  
pp. 1451-1453
Author(s):  
Young Joon Jung ◽  
Young Seok Kim ◽  
Kyu Ho Lee ◽  
Tae Ho Kim ◽  
Bong Ki Ryu
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Thermal Expansion ◽  
Electric Conductivity ◽  
Thermal Expansion Coefficient ◽  
Expansion Coefficient ◽  
Arrhenius Equation ◽  
Activation Energies ◽  
Borate Glasses ◽  
Sio2 System

This work is to compare the electric conductive activation energies with increasing Na2O in SiO2 and B2O3 glasses. The electrical conductivity is measured by TER2000 analyzer and it is compared with value calculated by Arrhenius equation. The conductivity of SiO2 system glasses is higher than B2O3 system glasses, and the highest value is 1.36 × 10-4 cm-1 in 60SiO2-40Na2O glass. The activation energy from conductivity is proportion to temperature and inverse proportion to Na2O contents. The activation energy is analyzed from density and CTE (thermal expansion coefficient).

scholarly journals Analysis of AC-Conductivity in Chalcogenide Ge10Se20 Bi80Thin Film

2016 ◽  
Vol 13 (2) ◽  
pp. 110-115 ◽  
Author(s):  
Shiveom Srivastav
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Dielectric Constant ◽  
Conduction Mechanism ◽  
Annealing Temperature ◽  
Thermal Evaporation ◽  
Melt Quenching ◽  
Thermal Evaporation Method ◽  
Correlated Barrier Hopping ◽  
Dominant Conduction Mechanism

The alloy Ge10Se20 Bi80 has been prepared. Thin films of Ge10Se20 Bi80 has been prepared via a thermal evaporation method (melt quenching technique) with 3000A thickness, and rate of deposition (4.1) A/sec at pressure 2x10-5 Torr. The A.C electrical conductivity of a- thin films Ge10Se20 Bi80 has been studied as a function of frequency for annealing temperature within the range (423-623) K, the deduced exponent s values, was found to decrease with increasing of annealing temperature through the frequency of the range (102-106) Hz. It was found that, the correlated barrier hopping (CBH) is the dominant conduction mechanism. Values of dielectric constant ε1 and dielectric loss ε2 were found to decrease with frequency and increase with temperature. The activation energies have been calculated for the annealed thin films.

Activation energy of relaxation processes in chalcogenide glasses

2013 ◽  
Vol 34 (0) ◽  
pp. 59-63
Author(s):  
А. А. Горват ◽  
В. М. Кришеник ◽  
А. Е. Кріштофорій ◽  
В. В. Мінькович ◽  
О. А. Молнар
Keyword(s):  
Activation Energy ◽  
Chalcogenide Glasses ◽  
Relaxation Processes
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