scholarly journals CVD-COMPOSITES AND SALINE SOLUTIONS-MELTS: SIMILARITY AND DIFFERENCES

2021 ◽  
Vol 26 (2(78)) ◽  
pp. 6-13
Author(s):  
V.F. Zinchenko ◽  
V.V. Menchuk
Keyword(s):  
Salt Solution ◽  
Chemical Vapor ◽  
Vapor Condensation ◽  
Exchange Reactions ◽  
Salt Melt ◽  
First Case ◽  
Secondary Reactions ◽  
The Difference ◽  
Increasing Temperature ◽  
Saline Solutions

The general features and specific peculiarities of the thermodynamics of the processes occurring during the evaporation of CVD (Chemical Vapor Deposition) – composites based on germanium – metal chalcogenide systems and dissolution of poorly soluble compounds in salt melts are considered. The essence of both processes consists in the occurrence of exchange reactions between the initial components with the formation of highly volatile substances in the first case and highly soluble compounds in the second. Both processes are endothermic in their thermochemical essence, and their course is facilitated by the entropy component, the role of which increases with increasing temperature, deepening of the vacuum in the case of CVD composites, and dilution of the saline solution – melt. The peculiarities due to the difference between vacuum and salt melt in nature have also been established. If the interaction of molecules in a rarefied molecular vapor of evaporation products can be practically neglected, then in a salt solution-melt, as in a highly concentrated system, secondary reactions of complexation of ions and molecules of the dissolved compound and the main ions of the melt are characteristic. The latter factor significantly affects the solubility in the salt melt due to the shift in equilibrium. Kinetic factors, which differ significantly in both processes, are essential in the reverse reactions of condensation of a CVD‑composite vapor on a substrate and in the deposition of crystals during the crystallization of a solute from a salt melt. Due to the much higher rate of vapor condensation on the substrate, more significant vapor saturation is achieved and, accordingly, the nucleation rate than during crystallization of the salt melt. Therefore, the probability of nanostructuring or complete amorphization of a coating obtained from a CVD‑composite is much higher than for a salt solution-melt, in which the ability to form nanostructures is more limited.

scholarly journals Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Xiaowei Wang ◽  
Feng Liang ◽  
Degang Zhao ◽  
Zongshun Liu ◽  
Jianjun Zhu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Layer Thickness ◽  
Stark Effect ◽  
Chemical Vapor ◽  
Multiple Quantum ◽  
Three Samples ◽  
Measurement Results ◽  
Cap Layer ◽  
The Difference

Abstract Three InGaN/GaN MQWs samples with varying GaN cap layer thickness were grown by metalorganic chemical vapor deposition (MOCVD) to investigate the optical properties. We found that a thicker cap layer is more effective in preventing the evaporation of the In composition in the InGaN quantum well layer. Furthermore, the quantum-confined Stark effect (QCSE) is enhanced with increasing the thickness of GaN cap layer. In addition, compared with the electroluminescence measurement results, we focus on the difference of localization states and defects in three samples induced by various cap thickness to explain the anomalies in room temperature photoluminescence measurements. We found that too thin GaN cap layer will exacerbates the inhomogeneity of localization states in InGaN QW layer, and too thick GaN cap layer will generate more defects in GaN cap layer.

Hollow nanoparticles of ?-iron oxide synthesized by chemical vapor condensation

2004 ◽  
Vol 6 (6) ◽  
pp. 627-631 ◽  
Author(s):  
Jai-Sung Lee ◽  
Sung-Soon Im ◽  
Chang-Woo Lee ◽  
Ji-Hun Yu ◽  
Yong-Ho Choa ◽  
...  
Keyword(s):  
Iron Oxide ◽  
Chemical Vapor ◽  
Vapor Condensation ◽  
Hollow Nanoparticles ◽  
Chemical Vapor Condensation

scholarly journals Initial-Condition Sensitivities and the Predictability of Downslope Winds

2009 ◽  
Vol 66 (11) ◽  
pp. 3401-3418 ◽  
Author(s):  
Patrick A. Reinecke ◽  
Dale R. Durran
Keyword(s):  
Wave Breaking ◽  
Initial Conditions ◽  
Static Stability ◽  
Synoptic Scale ◽  
Wind Speeds ◽  
Downslope Winds ◽  
First Case ◽  
Downslope Wind ◽  
The Difference ◽  
Strong Winds

Abstract The sensitivity of downslope wind forecasts to small changes in initial conditions is explored by using 70-member ensemble simulations of two prototypical windstorms observed during the Terrain-Induced Rotor Experiment (T-REX). The 10 weakest and 10 strongest ensemble members are composited and compared for each event. In the first case, the 6-h ensemble-mean forecast shows a large-amplitude breaking mountain wave and severe downslope winds. Nevertheless, the forecasts are very sensitive to the initial conditions because the difference in the downslope wind speeds predicted by the strong- and weak-member composites grows to larger than 28 m s−1 over the 6-h forecast. The structure of the synoptic-scale flow one hour prior to the windstorm and during the windstorm is very similar in both the weak- and strong-member composites. Wave breaking is not a significant factor in the second case, in which the strong winds are generated by a layer of high static stability flowing beneath a layer of weaker mid- and upper-tropospheric stability. In this case, the sensitivity to initial conditions is weaker but still significant. The difference in downslope wind speeds between the weak- and strong-member composites grows to 22 m s−1 over 12 h. During and one hour before the windstorm, the synoptic-scale flow exhibits appreciable differences between the strong- and weak-member composites. Although this case appears to be more predictable than the wave-breaking event, neither case suggests that much confidence should be placed in the intensity of downslope winds forecast 12 or more hours in advance.

INHERITED FACTOR-VII DEFECT IN A NEGRO FAMILY

PEDIATRICS ◽  
1961 ◽  
Vol 27 (2) ◽  
pp. 204-213
Author(s):  
Helen I. Glueck ◽  
James M. Sutherland
Keyword(s):  
Prothrombin Time ◽  
Factor Vii ◽  
Homozygous State ◽  
Control Value ◽  
One Stage ◽  
First Case ◽  
Severe Deficiency ◽  
Low Levels ◽  
The Difference ◽  
The One

A case of factor-VII deficiency of a congenital nature in a Negro male child has been reported. As far as can be determined, this is the first case reported in this race. The defect was detected at 6 hours of age. Prothrombin, as contrasted to factor VII, after initially low levels normally found in infants, rose to adult levels. The patient's one-stage prothrombin time has ranged between 25 to 35 second (normal 11 to 12 seconds). In spite of this, he has never shown any manifestations of hemorrhage. The patient's family was studied and the findings indicate that the patient's defect represented a homozygous state and that both parents with a less severe deficiency were heterozygous for the trait. The defect is an autosomal disorder directly inherited. It is clinically apparent and easily detected only in the homozygous state. The heterozygous state is characterized by a very slight prolongation of the one-stage prothrombin time, the difference from the control value being so minimal as to be overlooked. In one subject studied, an aunt of the propositus, the quantitative defect (42% of normal) could not be regularly detected by the usual methods. Only by using the plasma of the propositus as the test plasma, was the defect in her plasma detected, thus explaining the transmission of the trait to her offspring. These findings explain the difficulties previously encountered in understanding the inheritance of the disorder.

One-step synthesis and properties of MnOx/TiO2 nanocomposites prepared by chemical vapor condensation process

2013 ◽  
Vol 233 ◽  
pp. 131-136 ◽  
Author(s):  
Eunseuk Park ◽  
Sungmin Chin ◽  
Yeon Seok Kim ◽  
Gwi-Nam Bae ◽  
Jongsoo Jurng
Keyword(s):  
Chemical Vapor ◽  
Vapor Condensation ◽  
Condensation Process ◽  
Chemical Vapor Condensation ◽  
One Step

Compositional Modulation and its Optoelectric Properties of Zn(S,Se,Te) Crystals Grown by Hydrogen Radical-Enhanced CVD

1995 ◽  
Vol 417 ◽  
Author(s):  
Hiroyuki Fujiwara ◽  
Toshihiro Ii ◽  
Isamu Shimizu
Keyword(s):  
Deep Level ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Small Shift ◽  
X Ray ◽  
Compositional Modulation ◽  
Peak Energy ◽  
Large Lattice ◽  
The Difference ◽  
Hydrogen Radical

AbstractHigh-quality (ZnS)n(ZnSe)12n and (ZnSe)n(ZnTe)11n (n=1∼4) crystals were grown at a low temperature of 200°C by hydrogen radical-enhanced chemical vapor deposition. From satellite peaks in x-ray diffraction spectra, these periodic structure crystals were confirmed to be grown coherently on substrates, in spite of large lattice mismatches between the grown layers and the substrates (͛=4∼7%). In photoluminescence (PL) spectra of these films, strong band-edge emissions were predominantly observed, resulting from a suppression of deep-level emissions. We found that the PL peak energy of (ZnSe)n(ZnTe)11n shifts systematically to lower energy by 200 meV with changes in the number of ZnSe layers (n), while relatively small shift of 13 meV was observed in (ZnS)n(ZnSe)12n. These discrepancy can be attributed to the difference of band-lineups or chemical natures of constituent atoms in these crystals.

Corrosion of polycrystalline ZnSe by alternating high voltage in a saline solution

1991 ◽  
Vol 6 (4) ◽  
pp. 667-669
Author(s):  
Joseph King
Keyword(s):  
Grain Boundary ◽  
High Voltage ◽  
Salt Solution ◽  
Saline Solution ◽  
Prolonged Exposure ◽  
Low Voltage ◽  
Mechanical Damage ◽  
Chemical Vapor ◽  
Nacl Solution ◽  
Chemical Vapor Deposited

Prolonged exposure of chemical vapor deposited, polycrystalline ZnSe to high ac voltages in the presence of a 1 molal NaCl solution induces severe mechanical damage. The damage takes the form of defects which originate at the surface and grow intergranularly into the bulk with a bush-like morphology. Neither exposure to the salt solution in the absence of the high voltage nor low voltage dc electrolytic exposure produces the defects. The damage may be associated with an intergranular hydride phase or grain boundary impurity segregations present or formed during the environmental exposure.

scholarly journals Growth and Device Performance of GaN Schottky Rectifiers

1999 ◽  
Vol 4 (1) ◽  
Author(s):  
Jen-Inn Chyi ◽  
C. -M. Lee ◽  
C.C. Chuo ◽  
G. C. Chi ◽  
G. T. Dang ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Negative Temperature ◽  
Organic Chemical ◽  
Schottky Rectifiers ◽  
Metal Organic ◽  
Increasing Temperature ◽  
Organic Chemical Vapor Deposition ◽  
Secondary Ion

Undoped, 4µm thick GaN layers grown by Metal Organic Chemical Vapor Deposition were used for fabrication of high stand off voltage (356 V) Schottky diode rectifiers. The figure of merit VRB2/RON, where VRB is the reverse breakdown voltage and RON is the on-resistance, was ~ 4.53 MW-cm−2 at 25°C. The reverse breakdown voltage displayed a negative temperature coefficient, due to an increase in carrier concentration with increasing temperature. Secondary Ion Mass Spectrometry measurements showed that Si and O were the most predominant electrically active impurities present in the GaN.

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